HONEYWELL SE2460-001
Specifications
Manufacturer
Honeywell
Manufacturers Part #
SE2460-001
Industry Aliases
SE2460-001
Sub-Category
Infrared Emitters
Brand
Micro Switch
Factory Pack Quantity
1
Datasheet
Extracted Text
SE2460 GaAs Infrared Emitting Diode FEATURES · Miniature, hermetically sealed, pill style, metal can package · 18¡ (nominal) beam angle · Wide operating temperature range (55¡C to +125¡C) · Ideal for direct mounting to printed circuit boards · 935 nm wavelength · Mechanically and spectrally matched to SD2420 photodiode, SD2440 phototransistor and SD2410 photodarlington INFRA--1.TIF DESCRIPTION OUTLINE DIMENSIONS in inches (mm) The SE2460 is a gallium arsenide infrared emitting Tolerance 3 plc decimals ±0.005(0.12) diode mounted in a hermetically sealed, glass lensed, 2 plc decimals ±0.020(0.51) metal can package. This package directly mounts in double sided PC boards. DIM_002.ds4 Honeywell reserves the right to make changes in order to improve design and 16 h supply the best products possible. SE2460 GaAs Infrared Emitting Diode ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS ABSOLUTE MAXIMUM RATINGS SCHEMATIC (25¡C Free-Air Temperature unless otherwise noted) Continuous Forward Current 75 mA Power Dissipation 125 mW [À] Operating Temperature Range -55¡C to 125¡C Storage Temperature Range -65¡C to 150¡C Soldering Temperature (10 sec) 260¡C Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 1.19 mW/¡C,when soldered into a double sided printed circuit board. Honeywell reserves the right to make changes in order to improve design and 17 h supply the best products possible. SE2460 GaAs Infrared Emitting Diode Fig. 1 Radiant Intensity vs Fig. 2 Radiant Intensity vs Angular Displacement gra_111.ds4 Forward Current gra_014.ds4 1.0 1.0 0.9 0.9 0.8 0.8 0.7 0.7 0.6 0.6 0.5 0.5 0.4 0.4 0.3 0.3 0.2 0.2 0.1 0.1 0.0 0.0 -40 -30 -20 -10 0 +10 +20 +30 +40 0.0 10.0 20.0 30.0 40.0 50.0 Forward current - mA Angular displacement - degrees Fig. 3 Fig. 4 Forward Voltage vs Forward Voltage vs Forward Current gra_203.ds4 Temperature gra_200.ds4 1.40 1.40 1.35 1.35 1.30 1.30 1.25 1.25 1.20 1.20 1.15 1.15 I = 20 mA F 1.10 1.10 1.05 1.05 1.00 1.00 0 10 20 30 40 50 60 70 80 -50 -25 0 25 50 75 100 125 Forward current - mA Temperature - °C Fig. 5 Spectral Bandwidth Fig. 6 Coupling Characteristics gra_005.ds4 gra_015.ds4 with SD2440 1.0 1.0 0.9 0.9 0.8 0.8 0.7 0.7 0.6 0.6 0.5 0.5 0.4 0.4 0.3 0.3 0.2 0.2 0.1 0.1 0.0 0.0 870 890 910 930 950 970 990 1010 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Wavelength - nm Lens-to-lens separation - inches Honeywell reserves the right to make changes in order to improve design and 18 h supply the best products possible. Relative intensity Forward voltage - V Relative intensity Forward voltage - V Normalized radiant Normalized light intensity current SE2460 GaAs Infrared Emitting Diode Fig. 7 Normalized Power Output vs Temperature gra_131.ds4 2.0 1.8 1.6 1.4 1.2 1.0 I = 50 mA F .8 .6 I = 20 mA F .4 .2 0 -50 -25 0 +25 +50 +75 +100 +125 T - Ambient temperature - (°C) A All Performance Curves Show Typical Values Honeywell reserves the right to make changes in order to improve design and 19 h supply the best products possible. Normalized power output
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