Photomicrosensor (Reflective) EE-SB5(-B) Be sure to read Precautions on page 24. ■ Dimensions ■ Features Dust-tight construction. Note: All units are in millimeters unless otherwise indicated. With a visible-light intercepting filter which allows objects to be sensed without being greatly influenced by the light radiated from fluorescent lamps. Mounted with M3 screws. Model with soldering terminals (EE-SB5). Model with PCB terminals (EE-SB5-B). Two, 3.2±0.2 dia. holes Recommended sensing distance = 5.0 mm Optical axis Optical axis ■ Absolute Maximum Ratings (Ta = 25°C) 9±0.2 11.5±0.2 Item Symbol Rated value Emitter Forward current I 50 mA F Four, 0.5 (see note 1) Pulse forward cur- I 1 A FP Four, 0.25 2.54±0.2 rent (see note 2) 7.62±0.3 2.54±0.2 Reverse voltage V 4 V R EE-SB5 EE-SB5-B Detector Collector–Emitter V 30 V CEO voltage Emitter–Collector V --- ECO voltage Collector current I 20 mA Internal Circuit C Collector dissipa- P 100 mW C A C tion (see note 1) Unless otherwise specified, the tolerances are as shown below. Ambient tem- Operating Topr –25°C to 80°C perature Storage Tstg –30°C to 80°C K E Dimensions Tolerance Soldering temperature Tsol 260°C 3 mm max. ±0.3 (see note 3) Terminal No. Name 3 < mm ≤ 6 ±0.375 Note: 1. Refer to the temperature rating chart if the ambient temper- A Anode 6 < mm ≤ 10 ±0.45 ature exceeds 25°C. K Cathode 2. The pulse width is 10 μs maximum with a frequency of 10 < mm ≤ 18 ±0.55 C Collector 100 Hz. 18 < mm ≤ 30 ±0.65 E Emitter 3. Complete soldering within 10 seconds. ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 30 mA F F Reverse current I 0.01 μA typ., 10 μA max. V = 4 V R R Peak emission wavelength λ 940 nm typ. I = 20 mA P F Detector Light current I 200 μA min., 2,000 μA max. I = 20 mA, V = 10 V L F CE White paper with a reflection ratio of 90%, d = 5 mm (see note) Dark current I 2 nA typ., 200 nA max. V = 10 V, 0 lx D CE Leakage current I 2 μA max. I = 20 mA, V = 10 V with no reflec- LEAK F CE tion Collector–Emitter saturated volt- V (sat) --- --- CE age Peak spectral sensitivity wave- λ 850 nm typ. V = 10 V P CE length Rising time tr 30 μs typ. V = 5 V, R = 1 kΩ, I = 1 mA CC L L Falling time tf 30 μs typ. V = 5 V, R = 1 kΩ, I = 1 mA CC L L Note: The letter “d” indicates the distance between the top surface of the sensor and the sensing object. 176 EE-SB5(-B) Photomicrosensor (Reflective) ■ Engineering Data Forward Current vs. Collector Light Current vs. Forward Current Light Current vs. Collector−Emitter Dissipation Temperature Rating Characteristics (Typical) Voltage Characteristics (Typical) Ta = 25°C d = 5 mm Ta = 25°C Sensing object: V = 10 V CE I = 40 mA White paper with F d = 5 mm a reflection factor Sensing object: of 90% White paper with a reflection fac tor of 90% I = 30 mA F I = 20 mA F I = 10 mA F Collector−Emitter voltage V (V) Ambient temperature Ta (°C) Forward current I (mA) CE F Relative Light Current vs. Dark Current vs. Ambient Response Time vs. Load Ambient Temperature Temperature Characteristics Resistance Characteristics Characteristics (Typical) (Typical) (Typical) V = 5 V V = 10 V CC CE I = 20 mA F Ta = 25°C 0lx V = 5 V CE Load resistance R (kΩ) L Ambient temperature Ta (°C) Ambient temperature Ta (°C) Sensing Distance Characteristics Sensing Position Characteristics Sensing Position Characteristics (Typical) (Typical) (Typical) I = 20 mA F I = 20 mA F V = 10 V CE V = 10 V CE Ta = 25°C Ta = 25°C d = 5 mm 1 d = 5 mm 1 Sensing Sensing object: White paper object: White with a reflection paper with a factor of 90% reflection factor of 90% Ta = 25°C I = 20 mA F V = 10 V CE Sensing object: White paper with a reflection factor of 90% Distance d (mm) 2 Distance d (mm) Distance d (mm) 2 Sensing Angle Characteristics Response Time Measurement (Typical) Circuit Input 90 % Output 10 % Input Ta = 25°C I = 20 mA F V = 10 V CE Output d = 5 mm Sensing object: White paper with a reflection factor of 90% Angle deviation θ (°) EE-SB5(-B) Photomicrosensor (Reflective) 177 Forward current I (mA) Light current I (μA) Relative light current I (%) F L L Relative light current I (%) L Collector dissipation P (mW) C Relative light current I (%) L Dark Current I (nA) D Light current I (mA) L Relative light current I (%) L Response time tr, tf (μs) Light current I (mA) L