Photomicrosensor (Transmissive) EE-SX198 Be sure to read Precautions on page 25. ■ Dimensions ■ Features General-purpose model with a 3-mm-wide slot. Note: All units are in millimeters unless otherwise indicated. PCB mounting type. 12.2±0.3 High resolution with a 0.5-mm-wide aperture. ■ Absolute Maximum Ratings (Ta = 25°C) 5±0.1 Item Symbol Rated value Four, C0.3 0.5±0.1 Two, C1±0.3 Emitter Forward current I 50 mA F (see note 1) Optical Pulse forward cur- I 1 A axis FP 10±0.2 8.5±0.1 rent (see note 2) 6.5+0.1 Reverse voltage V 4 V R Detector Collector–Emitter V 30 V CEO 6.2±0.5 voltage Emitter–Collector V --- ECO Four, 0.5±0.1 Four, 0.25±0.1 voltage 2.5±0.1 Cross section BB 9.2±0.3 Collector current I 20 mA C Cross section AA Collector dissipa- P 100 mW C tion (see note 1) Ambient tem- Operating Topr –25°C to 85°C Internal Circuit perature Storage Tstg –30°C to 100°C K C Soldering temperature Tsol 260°C (see note 3) A E Note: 1. Refer to the temperature rating chart if the ambient temper- ature exceeds 25°C. Terminal No. Name 2. The pulse width is 10 μs maximum with a frequency of 100 Hz. A Anode 3. Complete soldering within 10 seconds. K Cathode Unless otherwise specified, C Collector the tolerances are ±0.2 mm. E Emitter ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition 1.2 V typ., 1.4 V max. I = 30 mA Emitter Forward voltage V F F Reverse current I 0.01 μA typ., 10 μA max. V = 4 V R R Peak emission wavelength λ 940 nm typ. I = 20 mA P F Detector Light current I 0.5 mA min., 14 mA max. I = 20 mA, V = 5 V L F CE Dark current I 2 nA typ., 200 nA max. V = 20 V, 0 lx D CE Leakage current I --- --- LEAK Collector–Emitter saturated volt- V (sat) 0.1 V typ., 0.4 V max. I = 40 mA, I = 0.5 mA CE F L age Peak spectral sensitivity wave- λ 850 nm typ. V = 10 V P CE length Rising time tr 4 μs typ. V = 5 V, R = 100 Ω, I = 5 mA CC L L Falling time tf 4 μs typ. V = 5 V, R = 100 Ω, I = 5 mA CC L L 94 EE-SX198 Photomicrosensor (Transmissive) ■ Engineering Data Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) Ta = 25°C V = 10 V CE IF Ta = −30°C PC Ta = 25°C Ta = 70°C Forward current I (mA) F Forward voltage V (V) Ambient temperature Ta (°C) F Relative Light Current vs. Ambi- Light Current vs. Collector−Emitter Dark Current vs. Ambient ent Temperature Characteristics Voltage Characteristics (Typical) Temperature Characteristics (Typical) (Typical) Ta = 25°C I = 50 mA I = 20 mA V = 10 V F F CE V = 5 V 0 lx CE I = 40 mA F I = 30 mA F I = 20 mA F I = 10 mA F Collector−Emitter voltage V (V) CE Ambient temperature Ta (°C) Ambient temperature Ta (°C) Sensing Position Characteristics Sensing Position Characteristics Response Time vs. Load Resist- (Typical) (Typical) ance Characteristics (Typical) 120 V = 5 V I = 20 mA CC F I = 20 mA F Ta = 25°C V = 10 V CE V = 10 V CE Ta = 25°C Ta = 25°C 100 (Center of optical axis) 80 d 60 40 20 0 −2.0 −1.5 −1.0 −0.5 0 0.5 1.0 1.5 2.0 Load resistance R (kΩ) L Distance d (mm) Distance d (mm) Response Time Measurement Circuit Input 90 % Output 10 % Input Output EE-SX198 Photomicrosensor (Transmissive) 95 Response time tr, tf (μs) Light current I (mA) L Forward current I (mA) F Collector dissipation P (mW) C Relative light current I (%) Relative light current I (%) L L Forward current I (mA) F Dark current I (nA) Relative light current I (%) D L Light current I (mA) L (Center of optical axis)