X062-E1-06_Revision.book 72 ページ ２０１０年１０月２９日　金曜日　午後７時５３分 Photomicrosensor (Transmissive) EE-SX1115 Be sure to read Precautions on page 25. ■ Dimensions ■ Features 14.5-mm-tall model with a deep slot. Note: All units are in millimeters unless otherwise indicated. PCB mounting type. Four, C0.3 High resolution with a 0.5-mm-wide aperture. 1.03 Four, R0.1 5 ■ Absolute Maximum Ratings (Ta = 25°C) +0.06 +0.06 1.35 1.35 −0.01 −0.01 Item Symbol Rated value 14 0.2 Part B 5 0.5±0.05 Emitter Forward current I 50 mA F A (see note 1) Four, R0.1 Optical axis 1.03 Pulse forward cur- I 1 A FP +0.06 rent (see note 2) 1.35 −0.01 Reverse voltage V 4 V 14.5 R 12±0.4 +0.06 1.35 −0.01 Detector Collector–Emitter V 30 V CEO Part C voltage 2.5 Emitter–Collector V --- ECO 2-2 voltage 5 min. A Four, 0.25 Collector current I 20 mA C Collector dissipa- P 100 mW (11.2) Four, 0.5 C (1.94) tion (see note 1) K C Cross section AA Ambient tem- Operating Topr –25°C to 85°C 1.75±0.1 perature Storage Tstg –30°C to A E 100°C B (2.1) C 4.2±0.1 Soldering temperature Tsol 260°C Internal Circuit (see note 3) K C Unless otherwise specified, the Note: 1. Refer to the temperature rating chart if the ambient temper- tolerances are as shown below. ature exceeds 25°C. 2. The pulse width is 10 μs maximum with a frequency of A E Dimensions Tolerance 100 Hz. 3. Complete soldering within 10 seconds. 3 mm max. ±0.3 Terminal No. Name 3 < mm ≤ 6 ±0.375 A Anode 6 < mm ≤ 10 ±0.45 K Cathode 10 < mm ≤ 18 ±0.55 C Collector E Emitter 18 < mm ≤ 30 ±0.65 ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 30 mA F F Reverse current I 0.01 μA typ., 10 μA max. V = 4 V R R Peak emission wavelength λ 940 nm typ. I = 20 mA P F Detector Light current I 0.5 mA min., 14 mA max. I = 20 mA, V = 10 V L F CE Dark current I 2 nA typ., 200 nA max. V = 10 V, 0 lx D CE Leakage current I --- --- LEAK Collector–Emitter saturated volt- V (sat) 0.1 V typ., 0.4 V max. I = 20 mA, I = 0.1 mA CE F L age Peak spectral sensitivity wave- λ 850 nm typ. V = 10 V P CE length Rising time tr 4 μs typ. V = 5 V, R = 100 Ω, I = 5 mA CC L L Falling time tf 4 μs typ. V = 5 V, R = 100 Ω, I = 5 mA CC L L 72 EE-SX1115 Photomicrosensor (Transmissive) X062-E1-06_Revision.book 73 ページ ２０１０年１０月２９日　金曜日　午後７時５３分 ■ Engineering Data Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) Ta = 25°C IF V = 10 V CE Ta = −30°C PC Ta = 25°C Ta = 70°C Forward current I (mA) F Ambient temperature Ta (°C) Forward voltage V (V) F Relative Light Current vs. Ambi- Light Current vs. Collector−Emitter Dark Current vs. Ambient ent Temperature Characteristics Voltage Characteristics (Typical) Temperature Characteristics (Typical) (Typical) Ta = 25°C V = 10 V I = 20 mA CE F 0 lx V = 5 V CE I = 50 mA F I = 40 mA F I = 30 mA F I = 20 mA F I = 10 mA F Collector−Emitter voltage V (V) Ambient temperature Ta (°C) CE Ambient temperature Ta (°C) Sensing Position Characteristics Response Time vs. Load Resist- Sensing Position Characteristics (Typical) ance Characteristics (Typical) (Typical) 120 V = 5 V CC I = 20 mA F I = 20 mA Ta = 25°C F V = 10 V CE V = 10 V CE Ta = 25°C 100 Ta = 25°C (Center of optical axis) 80 d 60 40 20 0 −2.0 −1.5 −1.0 −0.5 0 0.5 1.0 1.5 2.0 Load resistance R (kΩ) Distance d (mm) L Distance d (mm) Response Time Measurement Circuit Input 90 % Output 10 % Input Output EE-SX1115 Photomicrosensor (Transmissive) 73 Response time tr, tf (μs) Forward current I (mA) F Light current I (mA) L Collector dissipation P (mW) C Relative light current I (%) Relative light current I (%) L L Forward current I (mA) F Dark current I (nA) D Relative light current I (%) L Light current I (mA) L (Center of optical axis)