CONTENTS Selection Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Microphotonic Devices Manuscript Paper Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Photomicrosensors Technical Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Precautions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Application Examples . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 Transmissive Photomicrosensors . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 Reflective Photomicrosensors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150 General Information Reliability. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 176 Security Trade Control . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 185 1 Selection Guide Sensing Sensing distance Model Output configuration Features Page method Transmissive 1.0 mm EE-SX1107 Phototransistor Ultra-compact, surface mounting 62 2.0 mm EE-SX1018 Phototransistor Compact, general purpose 30 EE-SX1049 Phototransistor Compact, general purpose 40 EE-SX1103 Phototransistor Ultra-compact, general purpose 56 EE-SX1105 Phototransistor Ultra-compact, general purpose 58 EE-SX1108 Phototransistor Ultra-compact, surface mounting 66 EE-SX1131 Phototransistor Ultra-compact, surface mounting, dual- 78 channel output EE-SX4134 Photo-IC Ultra-compact, surface mounting 136 EE-SX493 Photo-IC High resolution 130 2.8 mm EE-SX1055 Phototransistor Compact, excellent cost performance 42 3.0 mm EE-SX1046 Phototransistor With a horizontal aperture 38 EE-SX1106 Phototransistor Ultra-compact, general purpose 60 EE-SX1109 Phototransistor Ultra-compact, surface mounting 70 EE-SX129 Phototransistor High resolution 88 EE-SX198 Phototransistor General purpose 94 EE-SX199 Phototransistor With a positioning boss 96 EE-SX298 Photo-Darlington transistor General purpose 116 EE-SX398/498 Photo-IC General purpose 132 3.4 mm EE-SX1071 Phototransistor General purpose 48 EE-SX1088 Phototransistor Screw mounting 52 EE-SX1096 Phototransistor With a horizontal aperture 54 EE-SX138 Phototransistor Screw mounting 90 EE-SX153 Phototransistor Screw mounting 92 EE-SH3 series Phototransistor Screw mounting 108 EE-SJ3 series Phototransistor Screw mounting 110 EE-SV3 series Phototransistor Screw mounting 114 EE-SX301/401 Photo-IC General purpose 118 EE-SX3088/4088 Photo-IC Screw mounting 124 3.5 mm EE-SX384/484 Photo-IC General purpose 128 3.6 mm EE-SX1057 Phototransistor Dust-proof construction, general purpose 44 EE-SG3(-B) Phototransistor Dust-proof construction 106 4.2 mm EE-SX1128 Phototransistor With a horizontal aperture 76 5.0 mm EE-SX1041 Phototransistor General purpose 34 EE-SX1042 Phototransistor High profile 36 EE-SX1081 Phototransistor General purpose 50 EE-SX1115 Phototransistor High profile with positioning pins 74 EE-SX1137 Phototransistor General purpose 82 EE-SX1235A-P2 Phototransistor Snap-in mounting 86 5.0 mm EE-SJ5-B Phototransistor General purpose 112 3.6 mm EE-SX3148-P1 Photo-IC Screw mounting 126 2 Selection Guide Sensing Sensing distance Model Output configuration Features Page method Transmissive 5.0 mm EE-SX3081/4081 Photo-IC General purpose 122 EE-SX3239-P2 Photo-IC Snap-in mounting 142 EE-SX3009-P1/ Photo-IC Screw mounting 134 4009-P1 EE-SX4235A-P2 Photo-IC Snap-in mounting 140 EE-SX460-P1 Photo-IC Snap-in mounting 144 5.2 mm EE-SX1035 Phototransistor Compact, wide 32 8.0 mm EE-SX1070 Phototransistor General purpose 46 EE-SX3070/4070 Photo-IC General purpose 120 15.0 mm EE-SX461-P11 Photo-IC Easy to mount 146 14 mm EE-SX1140 Phototransistor Wide, high profile 84 Actuator mount- --- EE-SA102 Phototransistor General purpose 98 ing EE-SA104 Phototransistor Compact 100 EE-SA407-P2 Photo-IC Easy to mount 148 Actuator --- EE-SA105 Phototransistor General purpose 102 EE-SA113 Phototransistor General purpose 104 Reflective 1.0 mm EE-SY193 Phototransistor Ultra-compact, surface mounting 162 3.5 mm EE-SY171 Phototransistor Thin 160 4.0 mm EE-SY169 Phototransistor High resolution (red LED) 154 EE-SY169A Phototransistor High resolution (infrared LED) 156 EE-SY169B Phototransistor High resolution (red LED) 158 4.4 mm EE-SY113 Phototransistor Dust-proof 152 EE-SY313/413 Photo-IC Dust-proof 172 5.0 mm EE-SY110 Phototransistor General purpose 150 EE-SB5(-B) Phototransistor Screw mounting 166 EE-SF5(-B) Phototransistor Dust-proof 168 EE-SY310/410 Photo-IC General purpose 170 Selection Guide 3 4 Selection Guide Microphotonic Devices Manuscript Paper Sensors EY3A-1051 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 EY3A-1081 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 5 8.3 dia. Manuscript Paper Sensor (1 Beam: 50 mm) EY3A-1051 Be sure to read Precautions on page 25. ■ Dimensions ■ Features Note: All units are in millimeters unless otherwise indicated. • Ensures higher sensitivity and external light interference resistivity Positioning boss Center of detector than any other photomicrosensor. Narrow sensing range ensures stable sensing of a variety of sens- ing objects. ■ Absolute Maximum Ratings (Ta = 25°C) 7.9 dia. Item Symbol Rated value Power supply voltage V 7 V CC +0.2 3.2 -0 dia. Load voltage V 7 V OUT Load current I 10 mA Center of emitter OUT Pin no. 1 Ambient tem- Operating Topr 0°C to 60°C perature Storage Tstg –15°C to 70°C Note: Make sure there is no icing or condensation when operating the Sensor. 8 dia. +0 3 -0.2 dia. Pin no. Remarks Name 1 O Output (OUT) 2 V Power supply (Vcc) 3 G Ground (GND) Unless otherwise specified, the tolerances are as shown below. Dimensions Tolerance 3 mm max. ±0.3 3 < mm ≤ 6 ±0.375 Recommended Mating Connectors: 6 < mm ≤ 10 ±0.45 Japan Molex 51090-0300 (crimp connector) 10 < mm ≤ 18 ±0.55 52484-0310 (press-fit connector) 18 < mm ≤ 30 ±0.65 30 < mm ≤ 50 ±0.8 ■ Electrical and Optical Characteristics (Ta = 0°C to 60°C) Item Value Condition Power supply voltage 5 V ±5% --- Current consumption 50 mA max. V = 5 V, R = ∞ CC L Peak current consumption 200 mA max. V = 5 V, R = ∞ CC L Low-level output voltage 0.6 V max. V = 5 V, I = 4 mA (see note 1) CC OL High-level output voltage 3.5 V min. V = 5 V, R = 4.7 kΩ (see note 2) CC L Response delay time (High to Low) 1.5 ms max. The time required for the output to become “Lo” after placing sensing object. Response delay time (Low to high) 1.5 ms max. The time required for the output to become “Hi” after removing sensing object. Note: 1. These conditions are for the sensing of lusterless paper with an OD of 0.9 maximum located at the correct sensing position of the Sensor as shown in the optical path arrangement on page 7. 2. These conditions are for the sensing of the paper supporting plate with an OD of 0.05 located using the glass plate without paper as shown in the optical path arrangement on page 7. 6 EY3A-1051 Manuscript Paper Sensor (1 Beam: 50 mm) 0.5 15 ■ Characteristics (Paper Table Glass: t = 6 mm max., Transparency Rate: 90% min.) (Ta =0°C to 60°C) Item Characteristic value Sensing density Lusterless paper with an OD of 0.9 max. (sensing distance: 50 mm) (see note) Non-sensing distance 85 mm (from the top of the sensor), OD: 0.05 Paper sensing distance 50 mm (from the top of the sensor) Ambient illumination Sunlight: 3,000 lx max., fluorescent light: 2,000 lx max. Note: 1. The data shown are initial data. 2. Optical darkness (OD) is defined by the following formula: POUT OD = − log 10 PIN P (mW): Light power incident upon the document IN P (mW): Reflected light power from the document OUT ■ Optical Path Arrangement 85 (see note 2) 10 dia. (see note 1) 50 (standard value) 8.9 Paper supporting plate Glass Note: 1. The part with oblique lines indicates the paper sensing area of the EY3A-1051, which is practically determined by the diameter of the beam and its tolerance. 2. The non-sensing distance of the EY3A-1051 is determined using a paper with an OD of 0.05. ■ Engineering Data Distance Characteristics (Typical) 4.75 V 5.0 V 5.25 V Distance (mm) EY3A-1051 Manuscript Paper Sensor (1 Beam: 50 mm) 7 OD (value) Manuscript Paper Sensor (1 Beam: 80 mm) EY3A-1081 Be sure to read Precautions on page 25. ■ Dimensions ■ Features Ensures higher sensitivity and external light interference resistivity Note: All units are in millimeters unless otherwise indicated. than any other photomicrosensor. Positioning boss Center of detector Narrow sensing range ensures stable sensing of a variety of sens- ing objects. ■ Absolute Maximum Ratings (Ta = 25°C) 7.9 dia. 8.3 dia. Item Symbol Rated value +0.2 Power supply voltage V 7 V 3.2 CC 0 dia. Center of emitter Load voltage V 7 V OUT Load current I 10 mA OUT Pin no.1 Ambient tem- Operating Topr 0°C to 60°C perature Storage Tstg –15°C to 70°C Note: Make sure there is no icing or condensation when operating the Sensor. 0 dia. 3 -0.2 Pin no. Remarks Name 1 O Output (OUT) 2 V Power supply (Vcc) 3 G Ground (GND) Unless otherwise specified, the tolerances are as shown below. Dimensions Tolerance 3 mm max. ±0.3 3 < mm ≤ 6 ±0.375 6 < mm ≤ 10 ±0.45 Recommended Mating Connectors: 10 < mm ≤ 18 ±0.55 Japan Molex 51090-0300 (crimp connector) 18 < mm ≤ 30 ±0.65 52484-0310 (press-fit connector) 30 < mm ≤ 50 ±0.8 50 < mm ≤ 80 ±0.95 ■ Electrical and Optical Characteristics (Ta = 0°C to 60°C) Item Value Condition Power supply voltage 5 V ±5% --- Current consumption 50 mA max. V = 5 V, R = ∞ CC L Peak current consumption 200 mA max. V = 5 V, R = ∞ CC L Low-level output voltage 0.6 V max. V = 5 V, I = 4 mA (see note 1) CC OL High-level output voltage 3.5 V min. V = 5 V, R = 4.7 kΩ (see note 2) CC L Response delay time (High to Low) 1.5 ms max. The time required for the output to become “Lo” after placing sensing object. Response delay time (Low to high) 1.5 ms max. The time required for the output to become “Hi” after removing sensing object. Note: 1. These conditions are for the sensing of lusterless paper with an OD of 0.7 maximum located at the correct sensing position of the Sensor as shown in the optical path arrangement on page 9. 2. These conditions are for the sensing of the paper supporting plate with an OD of 0.05 located using the glass plate without paper as shown in the optical path arrangement on page 9. 8 EY3A-1081 Manuscript Paper Sensor (1 Beam: 80 mm) ■ Characteristics (Paper Table Glass: t = 6 mm max., Transparency Rate: 90% min.) (Ta =0°C to 60°C) Item Characteristic value Sensing density Lusterless paper with an OD of 0.7 max. (sensing distance: 80 mm) (see note) Non-sensing distance 120 mm (from the top of the sensor), OD: 0.05 Paper sensing distance 80 mm (from the top of the sensor) Ambient illumination Sunlight: 3,000 lx max., fluorescent light: 2,000 lx max. Note: 1. The data shown are initial data. 2. Optical darkness (OD) is defined by the following formula: POUT OD = − log 10 PIN P (mW):Light power incident upon the document IN P (mW):Reflected light power from the document OUT ■ Optical Path Arrangement 120 (see note 2) 10 dia. (see note 1) 80 (Standard value) Paper supporting plate Glass Note: 1. The part with oblique lines indicates the paper sensing area of the EY3A-1081, which is practically determined by the diameter of the beam and its tolerance. 2. The non-sensing distance of the EY3A-1081 is determined using a paper with an OD of 0.05. ■ Engineering Data Distance Characteristics (Typical) 4.75 V 5.0 V 5.25 V Distance (mm) EY3A-1081 Manuscript Paper Sensor (1 Beam: 80 mm) 9 OD (value) 10 EY3A-1081 Manuscript Paper Sensor (1 Beam: 80 mm) Photomicrosensors Transmissive Sensors Technical Information . . . . . . . . . . . . . . 12 EE-SX138 . . . . . . . . . . . . . . . . . . . . . . 90 Precautions . . . . . . . . . . . . . . . . . . . . . 25 EE-SX153 . . . . . . . . . . . . . . . . . . . . . . 92 Application Examples . . . . . . . . . . . . . . 28 EE-SX198 . . . . . . . . . . . . . . . . . . . . . . 94 EE-SX1018. . . . . . . . . . . . . . . . . . . . . . 30 EE-SX199 . . . . . . . . . . . . . . . . . . . . . . 96 EE-SX1035. . . . . . . . . . . . . . . . . . . . . . 32 EE-SA102 . . . . . . . . . . . . . . . . . . . . . . 98 EE-SX1041. . . . . . . . . . . . . . . . . . . . . . 34 EE-SA104 . . . . . . . . . . . . . . . . . . . . . . 100 EE-SX1042. . . . . . . . . . . . . . . . . . . . . . 36 EE-SA105 . . . . . . . . . . . . . . . . . . . . . . 102 EE-SX1046. . . . . . . . . . . . . . . . . . . . . . 38 EE-SA113 . . . . . . . . . . . . . . . . . . . . . . 104 EE-SX1049. . . . . . . . . . . . . . . . . . . . . . 40 EE-SG3/EE-SG3-B . . . . . . . . . . . . . . . 106 EE-SX1055. . . . . . . . . . . . . . . . . . . . . . 42 EE-SH3 Series. . . . . . . . . . . . . . . . . . . 108 EE-SX1057. . . . . . . . . . . . . . . . . . . . . . 44 EE-SJ3 Series . . . . . . . . . . . . . . . . . . . 110 EE-SX1070. . . . . . . . . . . . . . . . . . . . . . 46 EE-SJ5-B . . . . . . . . . . . . . . . . . . . . . . . 112 EE-SX1071. . . . . . . . . . . . . . . . . . . . . . 48 EE-SV3 Series . . . . . . . . . . . . . . . . . . . 114 EE-SX1081. . . . . . . . . . . . . . . . . . . . . . 50 EE-SX298 . . . . . . . . . . . . . . . . . . . . . . 116 EE-SX1088. . . . . . . . . . . . . . . . . . . . . . 52 EE-SX301/-SX401 . . . . . . . . . . . . . . . . 118 EE-SX1096. . . . . . . . . . . . . . . . . . . . . . 54 EE-SX3070/-SX4070 . . . . . . . . . . . . . . 120 EE-SX1103. . . . . . . . . . . . . . . . . . . . . . 56 EE-SX3081/-SX4081 . . . . . . . . . . . . . . 122 EE-SX1105. . . . . . . . . . . . . . . . . . . . . . 58 EE-SX3088/-SX4088 . . . . . . . . . . . . . . 124 EE-SX1106. . . . . . . . . . . . . . . . . . . . . . 60 EE-SX3148-P1. . . . . . . . . . . . . . . . . . . 126 EE-SX1107. . . . . . . . . . . . . . . . . . . . . . 62 EE-SX384/-SX484 . . . . . . . . . . . . . . . . 128 EE-SX1108. . . . . . . . . . . . . . . . . . . . . . 66 EE-SX493 . . . . . . . . . . . . . . . . . . . . . . 130 EE-SX1109. . . . . . . . . . . . . . . . . . . . . . 70 EE-SX398/498 . . . . . . . . . . . . . . . . . . . 132 EE-SX1115. . . . . . . . . . . . . . . . . . . . . . 74 EE-SX3009-P1/-SX4009-P1 . . . . . . . . 134 EE-SX1128. . . . . . . . . . . . . . . . . . . . . . 76 EE-SX4134 . . . . . . . . . . . . . . . . . . . . . 136 EE-SX1131. . . . . . . . . . . . . . . . . . . . . . 78 EE-SX4235A-P2 . . . . . . . . . . . . . . . . . 140 EE-SX1137. . . . . . . . . . . . . . . . . . . . . . 82 EE-SX3239-P2. . . . . . . . . . . . . . . . . . . 142 EE-SX1140. . . . . . . . . . . . . . . . . . . . . . 84 EE-SX460-P1. . . . . . . . . . . . . . . . . . . . 144 EE-SX1235A-P2. . . . . . . . . . . . . . . . . . 86 EE-SX461-P11. . . . . . . . . . . . . . . . . . . 146 EE-SX129. . . . . . . . . . . . . . . . . . . . . . . 88 EE-SA407-P2. . . . . . . . . . . . . . . . . . . . 148 Reflective Sensors EE-SY110. . . . . . . . . . . . . . . . . . . . . . . 150 EE-SY113. . . . . . . . . . . . . . . . . . . . . . . 152 EE-SY169. . . . . . . . . . . . . . . . . . . . . . . 154 EE-SY169A . . . . . . . . . . . . . . . . . . . . . 156 EE-SY169B . . . . . . . . . . . . . . . . . . . . . 158 EE-SY171. . . . . . . . . . . . . . . . . . . . . . . 160 EE-SY193. . . . . . . . . . . . . . . . . . . . . . . 162 EE-SB5(-B). . . . . . . . . . . . . . . . . . . . . . 166 EE-SF5(-B). . . . . . . . . . . . . . . . . . . . . . 168 EE-SY310/-SY410 . . . . . . . . . . . . . . . . 170 EE-SY313/-SY413 . . . . . . . . . . . . . . . . 172 11 Technical Information Features of Photomicrosensors The Photomicrosensor is a compact optical sensor that senses objects or object positions with an optical beam. The transmissive Photomicrosen- sor and reflective Photomicrosensor are typical Photomicrosensors. The transmissive Photomicrosensor incorporates an emitter and a transmissive that face each other as shown in Figure 1. When an object is lo- cated in the sensing position between the emitter and the detector, the object intercepts the optical beam of the emitter, thus reducing the amount of optical energy reaching the detector. The reflective Photomicrosensor incorporates an emitter and a detector as shown in Figure 2. When an object is located in the sensing area of the reflective Photomicrosensor, the object reflects the optical beam of the emitter, thus changing the amount of optical energy reaching the detector. “Photomicrosensor” is an OMRON product name. Generally, the Photomicrosensor is called a photointerrupter. Figure 1. Transmissive Photomicrosensor Figure 2. Reflective Photomicrosensor LED Phototransistor LED Phototransistor Datasheet ■ Electrical and Optical Characteristics The electrical and optical characteristics of Photomicrosensors ■ Absolute Maximum Ratings and indicate the performance of Photomicrosensors under certain conditions. Most items of the electrical and optical characteristics Electrical and Optical Characteristics are indicated by maximum or minimum values. OMRON usually The datasheets of Photomicrosensors include the absolute sells Photomicrosensors with standard electrical and optical maximum ratings and electrical and optical characteristics of the characteristics. The electrical and optical characteristics of Photomicrosensors as well as the datasheets of transistors and ICs. Photomicrosensors sold to customers may be changed upon It is necessary to understand the difference between the absolute request. All electrical and optical characteristic items of maximum ratings and electrical and optical characteristics of various Photomicrosensors indicated by maximum or minimum values are Photomicrosensors. checked and those of the Photomicrosensors indicated by typical values are regularly checked before shipping so that OMRON can ■ Absolute Maximum Ratings guarantee the performance of the Photomicrosensors. In short, the absolute maximum ratings indicate the permissible The absolute maximum ratings of Photomicrosensors and other operating limits of the Photomicrosensors and the electrical products with semiconductors specify the permissible operating and optical characteristics indicate the maximum performance voltage, current, temperature, and power limits of these products. of the Photomicrosensors. The products must be operated absolutely within these limits. Therefore, when using any Photomicrosensor, do not ignore the absolute maximum ratings of the Photomicrosensor, or the Photomicrosensor will not operate precisely. Furthermore, the Photomicrosensor may be deteriorate or become damaged, in which case OMRON will not be responsible. Practically, Photomicrosensors should be used so that there will be some margin between their absolute maximum ratings and actual operating conditions. 12 Technical Information Terminology The terms used in the datasheet of each Photomicrosensor with a phototransistor output circuit or a photo IC output circuit are explained below. ■ Phototransistor Output Photomicrosensor Symbol Item Definition I Pulse forward current The maximum pulse current that is allowed to flow continuously from the anode to cathode of an LED FP under a specified temperature, a repetition period, and a pulse width condition. I Collector current The current that flows to the collector junction of a phototransistor. C P Collector dissipation The maximum power that is consumed by the collector junction of a phototransistor. C I Dark current The current leakage of the phototransistor when a specified bias voltage is imposed on the phototrans- D istor so that the polarity of the collector is positive and that of the emitter is negative on condition that the illumination of the Photomicrosensor is 0 lx. I Light current The collector current of a phototransistor under a specified input current condition and at a specified L bias voltage. V (sat) Collector-emitter saturated The ON-state voltage between the collector and emitter of a phototransistor under a specified bias cur- CE voltage rent condition. I Leakage current The collector current of a phototransistor under a specified input current condition and at a specified LEAK bias voltage when the phototransistor is not exposed to light. tr Rising time The time required for the leading edge of an output waveform of a phototransistor to rise from 10% to 90% of its final value when a specified input current and bias condition is given to the phototransistor. tf Falling time The time required for the trailing edge of an output waveform of a phototransistor to decrease from 90% to 10% of its final value when a specified input current and bias condition is given to the phototransistor. V Collector-emitter voltage The maximum positive voltage that can be applied to the collector of a phototransistor with the emitter CEO at reference potential. V Emitter-collector voltage The maximum positive voltage that can be applied to the emitter of a phototransistor with the collector ECO at reference potential. ■ Phototransistor/Photo IC Output Photomicrosensor Symbol Item Definition I Forward current The maximum DC voltage that is allowed to flow continuously from the anode of the LED to the cathode F of the LED under a specified temperature condition. V Reverse voltage The maximum negative voltage that can be applied to the anode of the LED with the cathode at refer- R ence potential. V Supply voltage The maximum positive voltage that can be applied to the voltage terminals of the photo IC with the CC ground terminal at reference potential. V Output voltage The maximum positive voltage that can be applied to the output terminal with the ground terminal of OUT the photo IC at reference potential. I Output current The maximum current that is allowed to flow in the collector junction of the output transistor of the photo OUT IC. P Output permissible dissi- The maximum power that is consumed by the collector junction of the output transistor of the photo IC. OUT pation V Forward voltage The voltage drop across the LED in the forward direction when a specified bias current is applied to F the photo IC. I Reverse current The reverse leakage current across the LED when a specified negative bias is applied to the anode R with the cathode at reference potential. V Output low voltage The voltage drop in the output of the photo IC when the IC output is turned ON under a specified volt- OL age and output current applied to the photo IC. V Output high voltage The voltage output by the photo IC when the IC output is turned OFF under a specified supply voltage OH and bias condition given to the photo IC. I Current consumption The current that will flow into the sensor when a specified positive bias voltage is applied from the pow- CC er source with the ground of the photo IC at reference potential. I LED current when output is The forward LED current value that turns OFF the output of the photo IC when the forward current to FT turned OFF the LED is increased under a specified voltage applied to the photo IC. (I ) FT OFF I LED current when output is The forward LED current value that turns ON the output of the photo IC when the forward current to FT turned ON the LED is increased under a specified voltage applied to the photo IC. (I ) FT ON ΔH Hysteresis The difference in forward LED current value, expressed in percentage, calculated from the respective forward LED currents when the photo IC is turned ON and when the photo IC is turned OFF. f Response frequency The number of revolutions of a disk with a specified shape rotating in the light path, expressed by the number of pulse strings during which the output logic of the photo IC can be obtained under a specified bias condition given to the LED and photo IC (the number of pulse strings to which the photo IC can respond in a second). Technical Information 13 Driving Current Level Design It is especially important to decide the level of the forward current (I ) The following explains how systems using Photomicrosensors must F of the emitter incorporated by any Photomicrosensor. The forward be designed. current must not be too large or too small. Before using any Photomicrosensor, refer to the absolute maximum ■ Emitter ratings in the datasheet of the Photomicrosensor to find the emitter’s forward current upper limit. For example, the first item in the Characteristics of Emitter absolute maximum ratings in the datasheet of the EE-SX1018 The emitter of each Photomicrosensor has an infrared LED or red shows that the forward current (I ) of its emitter is 50 mA at a Ta F LED. Figure 3 shows how the LED forward current characteristics of (ambient temperature) of 25°C. This means the forward current (I ) F the EE-SX1018, which has an emitter with an infrared LED, and of the emitter is 50 mA maximum at a Ta of 25°C. As shown in those of the EE-SY169B, which has an emitter with a red LED, are Figure 4, the forward current must be reduced according to changes changed by the voltages imposed on the EE-SX1018 and EE- in the ambient temperature. SY169B. As shown in this figure, the LED forward current Figure 4 indicates that the forward current (I ) is approximately F characteristics of the EE-SX1018 greatly differ from those of the EE- 27 mA maximum if the EE-SX1018 is used at a Ta of 60°C. This SY169B. The LED forward current characteristics of any means that a current exceeding 27 mA must not flow into the emitter Photomicrosensor indicate how the voltage drop of the LED incorporated by the EE-SX1018 at a Ta of 60°C. incorporated by the emitter of the Photomicrosensor is changed by As for the lower limit, a small amount of forward current will be the LED’s forward current (I ) flowing from the anode to cathode. F required because the LED will not give any output if the forward Figure 3 shows that the forward voltage (V ) of the red LED is higher F current I is zero. F than that of the infrared LED. The forward voltage (V ) of the infrared LED is approximately 1.2 V F Figure 4. Temperature Characteristics (EE-SX1018) and that of the red LED is approximately 2 V provided that the practical current required by the infrared LED and that required by P C the red LED flow into these LEDs respectively. Figure 3. LED Forward Current vs. Forward Voltage I F Characteristics (Typical) EE-SX1018 (infrared LED) EE-SY169B (red LED) Ambient temperature Ta (°C) In short, the forward current lower limit of the emitter of any Photomicrosensor must be 5 mA minimum if the emitter has an infrared LED and 2 mA minimum if the emitter has a red LED. If the 2.4 forward current of the emitter is too low, the optical output of the emitter will not be stable. To find the ideal forward current value of Forward voltage V (V) F the Photomicrosensor, refer to the light current (I ) shown in the L Forward Voltage V datasheet of the Photomicrosensor. The light current (I ) indicates F L the relationship between the forward current (I ) of the LED F incorporated by the Photomicrosensor and the output of the LED. The light current (I ) is one of the most important characteristics. If L the forward current specified by the light current (I ) flows into the L emitter, even though there is no theoretical ground, the output of the emitter will be stable. This characteristic makes it possible to design the output circuits of the Photomicrosensor easily. For example, the datasheet of EE-SX1018 indicates that a forward current (I ) of 20 F mA is required. 14 Technical Information Forward current I (mA) F Forward current I (mA) F Collector dissipation P (mW) C The positions of the limiting resistor (R) and the LED in Figure 5 are Design Method interchangeable. If the LED is imposed with reverse voltages The following explains how the constants of a Photomicrosensor including noise and surge voltages, add a rectifier diode to the circuit must be determined. Figure 5 shows a basic circuit that drives the as shown in Figure 6. LEDs can be driven by pulse voltages, the LED incorporated by a Photomicrosensor. method of which is, however, rarely applied to Photomicrosensors. The basic circuit absolutely requires a limiting resistor (R). If the LED In short, the following are important points required to operate any is imposed with a forward bias voltage without the limiting resistor, Photomicrosensor. the current of the LED is theoretically limitless because the forward A forward voltage (V ) of approximately 1.2 V is required if the F impedance of the LED is low. As a result the LED will burn out. Photomicrosensor has an infrared LED and a forward voltage (V ) of F Users often ask OMRON about the appropriate forward voltage to approximately 2 V is required if the Photomicrosensor has a red be imposed on the LED incorporated by each Photomicrosensor LED. model that they use. There is no upper limit of the forward voltage The most ideal level of the forward current (I ) must flow into the F imposed on the LED provided that an appropriate limiting resistor is LED incorporated by the Photomicrosensor. connected to the LED. There is, however, the lower limit of the Decide the resistance of the limiting resistor connected to the LED forward voltage imposed on the LED. As shown in Figure 3, the after deciding the value of the forward current (I ). lower limit of the forward voltage imposed on the LED must be at F If the LED is imposed with a reverse voltage, connect a rectifier least 1.2 to 2 V, or no forward current will flow into the LED. The diode to the LED in parallel with and in the direction opposite to the supply voltage of a standard electronic circuit is 5 V minimum. direction of the LED. Therefore, a minimum of 5 V should be imposed on the LED. A system incorporating any Photomicrosensor must be designed by Figure 6. Reverse Voltage Protection Circuit considering the following. 1. Forward current (I ) F 2. Limiting resistor (R) (refer to Figure 5) As explained above, determine the optimum level of the forward current (I ) of the LED. The forward current (I ) of the EE-SX1018, F F for example, is 20 mA. Therefore, the resistance of the limiting resistor connected to the LED must be decided so that the forward current of the LED will be approximately 20 mA. The resistance of the limiting resistor is obtained from the following. V − V CC F R = I F In this case 5 V must be substituted for the supply voltage (V ). The CC forward voltage (V ) obtained from Figure 3 is approximately 1.2 V F when the forward current (I ) of the LED is 20 mA. Therefore, the F following resistance is obtained. V − V 5 to 1.2 V CC F R = = = 190 Ω I F 20 mA = approx. 180 to 220 Ω The forward current (I ) varies with changes in the supply voltage F (V ), forward voltage (V ), or resistance. Therefore, make sure that CC F there is some margin between the absolute maximum ratings and the actual operating conditions of the Photomicrosensor. Figure 5. Basic Circuit V CC I F R VF GND (ground) Technical Information 15 The dark current temperature and light current temperature ■ Design of Systems Incorporating dependencies of the phototransistor incorporated by any Photomicrosensors (1) Photomicrosensor must not be ignored. The dark current temperature dependency of the phototransistor increases when the ambient temperature of the Photomicrosensor in operation is high or Phototransistor Output the Photomicrosensor has a photoelectric Darlington transistor as the detector element of the Photomicrosensor. Figure 8 shows the dark current temperature dependency of the phototransistor Characteristics of Detector Element incorporated by the EE-SX1018. The changes in the current flow of the detector element with and without an optical input are important characteristics of a detector Figure 8. Dark Current vs. Ambient Temperature element. Figure 7 shows a circuit used to check how the current flow Characteristics (Typical) (EE-SX1018) of the phototransistor incorporated by a Photomicrosensor is changed by the LED with or without an appropriate forward current (I ) flow, provided that the ambient illumination of the F V = 10 V CE Photomicrosensor is ideal (i.e., 0 lx). When there is no forward 0 lx current (I ) flowing into the LED or the optical beam emitted from the F LED is intercepted by an opaque object, the ammeter indicates several nanoamperes due to a current leaking from the phototransistor. This current is called the dark current (I ). When the D forward current (I ) flows into the LED with no object intercepting the F optical beam emitted from the LED, the ammeter indicates several milliamperes. This current is called the light current (I ). L 6 The difference between the dark current and light current is 10 times larger as shown below. When optical beam to the phototransistor is interrupted –9 Dark current I : 10 A D When optical beam to the phototransistor is not interrupted –3 Light current I : 10 A L 6 The standard light current of a phototransistor is 10 times as large as the dark current of the phototransistor. This difference in current can be applied to the sensing of a variety of objects. Figure 7. Measuring Circuit Ambient temperature Ta (°C) Ammeter Due to the temperature dependency of the phototransistor, the light current (I ) of the phototransistor as the detector element of the L Photomicrosensor increases according to a rise in the ambient temperature. As shown in Figure 9, however, the output of the LED decreases according to a rise in the ambient temperature due to the temperature dependency of the LED. An increase in the light current of the phototransistor is set off against a decrease in the output of the LED and consequently the change of the output of the Photomicrosensor according to the ambient temperature is comparatively small. Refer to Figure 10 for the light current temperature dependency of the phototransistor incorporated by the EE-SX1018. The ambient illumination of the LED and phototransistor The light current temperature dependency shown in Figure 10 is, incorporated by the Photomicrosensor in actual operation is not 0 lx. however, a typical example. The tendency of the light current Therefore, a current larger than the dark current of the temperature dependency of each phototransistor is indefinite. This phototransistor will flow into the phototransistor when the optical means the temperature compensation of any Photomicrosensor is beam emitted from the LED is interrupted. This current is rather difficult. large and must not be ignored if the Photomicrosensor has a photoelectric Darlington transistor, which is highly sensitive, as the detector element of the Photomicrosensor. The dark current of the phototransistor incorporated by any reflective Photomicrosensor flows if there is no reflective object in the sensing area of the reflective Photomicrosensor. Furthermore, due to the structure of the reflective Photomicrosensor, a small portion of the optical beam emitted from the LED reaches the phototransistor after it is reflected inside the reflective Photomicrosensor. Therefore, the dark current and an additional current will flow into the phototransistor if there is no sensing object in the sensing area. This additional current is called leakage current (I ). The leakage current of the LEAK phototransistor is several hundred nanoamperes and the dark current of the phototransistor is several nanoamperes. 16 Technical Information Dark current I D Changes in Characteristics Figure 9. LED and Phototransistor Temperature Characteristics (Typical) The following explains the important points required for the designing of systems incorporating Photomicrosensors by considering worst case design technique. Worst case design A relative value of 100 is technique is a method to design systems so that the based on a Ta of 25°C. Photomicrosensors will operate normally even if the characteristics of the Photomicrosensors are at their worst. A system incorporating LED optical output any Photomicrosensor must be designed so that they will operate even if the light current (I ) of the phototransistor is minimal and the L dark current (I ) and leakage current of the phototransistor are D maximal. This means that the system must be designed so that it will operate even if the difference in the current flow of the phototransistor between the time that the Photomicrosensor senses an object and the time that the Photomicrosensor does not sense the object is minimal. ) and dark current (I ) values of the The worst light current (I L D phototransistor incorporated by any Photomicrosensor is specified in Phototransistor light current the datasheet of the Photomicrosensor. (These values are specified in the specifications either as the minimum value or maximum value.) Table 1 shows the dark current (I ) upper limit and light current (I ) D L lower limit values of the phototransistors incorporated by a variety of Photomicrosensors. Systems must be designed by considering the dark current (I ) D upper limit and light current (I ) lower limit values of the L Ambient temperature Ta (°C) phototransistors. Not only these values but also the following factors must be taken into calculation to determine the upper limit of the Figure 10. Relative Light Current vs. Ambient dark current (I ) of each of the phototransistors. Temperature Characteristics (EE-SX1018) D External light interference Temperature rise Measurement condition I = 20 mA FPower supply voltage V = 5 V CE Leakage current caused by internal light reflection if the systems use reflective Photomicrosensors. The above factors increase the dark current (I ) of each D phototransistor. As for the light current (I ) lower limit of each phototransistor, the L following factors must be taken into calculation. Temperature change Secular change The above factors decrease the light current (I ) of each L phototransistor. Table 2 shows the increments of the dark current (I ) and the D decrements of the light current (I ) of the phototransistors. D Therefore, if the EE-SX1018 is operated at a Ta of 60°C maximum and a V of 10 V for approximately 50,000 hours, for example, the CC dark current (I ) of the phototransistor incorporated by the EE- D SX1018 will be approximately 4 μA and the light current (I ) of the L phototransistor will be approximately 0.5 mA because the dark current (I ) of the phototransistor at a Ta of 25°C is 200 D Ambient temperature Ta (°C) nanoamperes maximum and the light current (I ) of the L phototransistor at a Ta of 25°C is 0.5 mA minimum. Table 3 shows the estimated worst values of a variety of Photomicrosensors, which must be considered when designing systems using these Photomicrosensors. The dispersion of the characteristics of the Photomicrosensors must be also considered, which is explained in detail later. The light current (I ) of the phototransistor incorporated by each reflective L Photomicrosensor shown in its datasheet was measured under the standard conditions specified by OMRON for its reflective Photomicrosensors. The light current (I ) of any reflective L Photomicrosensor greatly varies with its sensing object and sensing distance. Technical Information 17 Relative light current (%) Relative value (%) Table 1. Rated Dark Current (I ) and Light Current (I ) Values D L Model Upper limit (I ) Lower limit (I ) Condition D L EE-SG3(-B) 200 nA 2 mA I = 15 mA F EE-SX1018, -SX1055 200 nA 0.5 mA I = 20 mA F EE-SX1041, -SX1042 EE-SX1070, -SX1071 EE-SX198, -SX199 EE-SB5(-B) 200 nA 0.2 mA I = 20 mA (see note) F EE-SF5(-B) EE-SY110 Condition V = 10 V, 0 lx V = 10 V --- CE CE Ta = 25°C Ta = 25°C Note: These values were measured under the standard conditions specified by OMRON for the corresponding Photomicrosensors. Table 2. Dependency of Detector Elements on Various Factors Elements Phototransistor Photo-Darlington transistor Dark current I External light interference To be checked using experiment To be checked using experiment D Temperature rise Increased by approximately 10 times with Increased by approximately 28 times with a temperature rise of 25°C. a temperature rise of 25°C. Supply voltage See Figure 11. See Figure 12. Light current I Temperature change Approximately –20% to 10% Approximately –20% to 10% L Secular change Decreased to approximately one-half of Decreased to approximately one-half of (20,000 to 50,000 hours) the initial value considering the tempera- the initial value considering the tempera- ture changes of the element. ture changes of the element. Note: For an infrared LED. Figure 11. Dark Current Imposed Voltage Dependency (Typical) (EE-SX1018) A relative dark current value of 100 is based on a Ta of 25°C and a V CE of 10 V. Collector-emitter voltage V (V) CE 18 Technical Information Relative dark current I (%) D Table 3. Estimated Worst Values of a Variety of Photomicrosensors Model Estimated worst value (I ) Estimated worst value (I ) Condition D L EE-SG3(-B) 4 nA 1 mA I = 15 mA F EE-SX1018, -SX1055 4 nA 0.25 mA I = 20 mA F EE-SX1041, -SX1042 EE-SX1070, -SX1071 EE-SX198, -SX199 EE-SB5(-B) 4 nA 0.1 mA I = 20 mA (see note) F EE-SF5(-B) EE-SY110 Condition V = 10 V, 0 lx V = 10 V, --- CE CE Ta = 60°C Operating hours = 50,000 to 100,000 hrs Ta = Topr Note: These values were measured under the standard conditions specified by OMRON for the corresponding Photomicrosensors with an Infrared LED. Design of Basic Circuitry Figure 13. Basic Circuit The following explains the basic circuit incorporated by a typical Photomicrosensor and the important points required for the basic circuit. and I ) of the phototransistor The flowing currents (i.e., I L D incorporated by the Photomicrosensor must be processed to obtain the output of the Photomicrosensor. Refer to Figure 13 for the basic circuit. The light current (I ) of the phototransistor will flow into the L resistor (R ) if the phototransistor receives an optical input and the L dark current (I ) and leakage current of the phototransistor will flow D or into the resistor (R ) if the phototransistor does not receive any L optical input. Therefore, if the phototransistor receives an optical Output input, the output voltage imposed on the resistor (R ) will be L obtained from the following. IL x RL If the phototransistor does not receive any optical input, the output Figure 14. Output Example voltage imposed on the resistor (R ) will be obtained from the L following. V = 10 V CC (I + leakage current) x R D L The output voltage of the phototransistor is obtained by simply connecting the resistor (R ) to the phototransistor. For example, to L obtain an output of 4 V minimum from the phototransistor when it is ON and an output of 1 V maximum when the phototransistor is OFF on condition that the light current (I ) of the phototransistor is 1 mA L Output voltage and the leakage current of the phototransistor is 0.1 mA, and these are the worst light current and leakage current values of the R = 4.7 kΩ L phototransistor, the resistance of the resistor (R ) must be L approximately 4.7 kΩ. Then, an output of 4.7 V (i.e., 1 mA x 4.7 kΩ) will be obtained when the phototransistor is ON and an output of EE-SX1018 0.47 V (i.e., 0.1 mA x 4.7 kΩ) will be obtained when the phototransistor is OFF. Practically, the output voltage of the phototransistor will be more than 4.7 V when the phototransistor is ON and less than 0.47 V when the phototransistor is OFF because the above voltage values are based on the worst light current and leakage current values of the phototransistor. The outputs obtained from the phototransistor are amplified and input to ICs to make practical use of the Photomicrosensor. Technical Information 19 Design of Applied Circuit Figure 17. Applied Circuit Example The following explains the designing of the applied circuit shown in EE-SX1018 Figure 15. V = 5 V CC The light current (I ) of the phototransistor flows into R and R when L 1 2 the phototransistor receives the optical beam emitted from the LED. Part of the light current (I ) will flow into the base and emitter of Q L 1 R3 when the voltage imposed on R exceeds the bias voltage (i.e., 4.7 kW 2 approximately 0.6 to 0.9 V) imposed between the base and emitter 74-series TTL IC of the transistor (Q ). The light current flowing into the base turns Q 1 1 R 1 200 Ω ON. A current will flow into the collector of Q through R when Q is 1 3 1 I C1 ON. Then, the electric potential of the collector will drop to a low R 2 logic level. The dark current and leakage current of the 10 kΩ phototransistor flow when the optical beam emitted from the LED is intercepted. The electric potential of the output of the phototransistor (i.e., (I + leakage current) x R ) is, however, lower than the bias D 2 voltage between the base and emitter of Q . Therefore, no current Calculation of R 1 2 will flow into the base of Q and Q will be OFF. The output of Q will 1 1 1 The resistance of R should be decided using the following so that 2 be at a high level. As shown in Figure 16, when the phototransistor the appropriate bias voltage (V (ON)) between the base and BE is ON, the phototransistor will be seemingly short-circuited through emitter of the transistor (Q ) to turn Q ON will be obtained. 1 1 the base and emitter of the Q , which is equivalent to a diode, and if 1 the light current (I ) of the phototransistor is large and R is not L 1 I × R > V C1 2 BE(ON) connected to the phototransistor, the light current (I ) will flow into Q I = I − I L 1 C1 L B ∴(I − I ) x R2 > V and the collector dissipation of the phototransistor will be L B BE(ON) excessively large. V BE(ON) The following items are important when designing the above applied ∴R > 2 I − I circuit: L B The voltage output (i.e., I x R ) of the phototransistor receiving the The bias voltage (V (ON)) between the base and emitter of Q is L 2 BE 1 optical beam emitted from the LED must be much higher than the approximately 0.8 V and the base current (I ) of Q is approximately B 1 bias voltage between the base and emitter of Q . 20 μA if Q is a standard transistor controlling small signals. The 1 1 estimated worst value of the light current (I ) of the phototransistor is The voltage output (i.e., (I + leakage current) x R ) of the pho- L D 2 0.25 mA according to Table 3. totransistor not receiving the optical beam emitted from the LED must be much lower than the bias voltage between the base and Therefore, the following is obtained. emitter of Q . 1 0.8 V Therefore, it is important to determine the resistance of R . Figure 17 2 R > = approx. 3.48 kΩ 2 0.25 mA − 20 μA shows a practical applied circuit example using the EE-SX1018 Photomicrosensor at a supply voltage (V ) of 5V to drive a 74- R must be larger than the above result. Therefore, the actual CC 2 series TTL IC. This applied circuit example uses R and R with resistance of R must be two to three times as large as the above 1 2 2 appropriate resistance values. result. In the above applied circuit example, the resistance of R is 2 10 kΩ. Figure 15. Applied Circuit Verification of R Value 2 The resistance of R obtained from the above turns Q ON. The 2 1 following explains the way to confirm whether the resistance of R 2 obtained from the above can turns Q OFF as well. The condition 1 required to turn Q OFF is obtained from the following. 1 (I + α) x R < V D 2 BE(OFF) Output Substitute 10 kΩ for R , 4 μA for the dark current (I ) according to 2 D Table 3, and 10 μA for the leakage current on the assumption that the leakage current is 10 μA in formula 3. The following is obtained. (I + a) × R > V D 2 BE(ON) (4 μA + 10 μA) × 10 kΩ = 0.140 V EE-SX1018 V = 0.4 V BE(OFF) Figure 16. Equivalent Circuit ∴0.140 V < 0.4 V The above result verifies that the resistance of R satisfies the 2 condition required to turn Q OFF. 1 If the appropriateness of the resistance of R has been verified, the 2 design of the circuit is almost complete. 20 Technical Information R LED Forward Current (I ) Supply Circuit 1 F As shown in Figure 16, when the phototransistor is ON, the The LED in the above circuitry is an independent component, to phototransistor will be seemingly short-circuited through the base which an appropriate current must be supplied from an external and emitter of the Q , and if the light current (I ) of the power supply. This is the most important item required by the 1 L phototransistor is large and R is not connected to the Photomicrosensor. 1 It is necessary to determine the appropriate forward current (I ) of phototransistor, the light current will flow into Q and the collector F 1 the LED that turns the photo IC ON. If the appropriate forward dissipation of the phototransistor will be excessively large. The current is determined, the Photomicrosensor can be easily used by resistance of R depends on the maximum permissible collector 1 simply supplying power to the detector circuitry (i.e., the photo IC). dissipation (P ) of the phototransistor, which can be obtained from C Refer to the datasheet of the Photomicrosensor to find the current of the datasheet of the Photomicrosensor. The resistance of R of a 1 the LED turning the photo IC ON. Table 4 is an extract of the phototransistor is several hundred ohms. In the above applied circuit datasheet of the EE-SX301/EE-SX401. example, the resistance of R is 200 Ω. 1 If the resistance of R is determined, the design of the circuit is 1 Table 4. Abstract of Characteristics complete. It is important to connect a transistor to the phototransistor Item Symbol EE-SX301, -SX401 incorporated by the Photomicrosensor to amplify the output of the Value Condition phototransistor, which increases the reliability and stability of the LED current when output I 8 mA max. V = 4.5 to 16 V FTOFF CC Photomicrosensor. Such reliability and stability of the is turned OFF (EE-SX301) Ta = 25°C Photomicrosensor cannot be achieved if the output of the phototransistor is not amplified. The response speed and other LED current when output I FTON performance characteristics of the circuit shown in Figure 15 are far is turned ON (EE-SX401) superior to those of the circuit shown in Figure 13 because the apparent impedance (i.e., load resistance) of the Photomicrosensor To design systems incorporating EE-SX301 or EE-SX401 is determined by R , the resistance of which is comparatively small. Photomicrosensors, the following are important points. 1 Recently, Photomicrosensors that have photo IC amplifier circuits A forward current equivalent to or exceeding the I value must FTOFF are increasing in number because they are easy to use and make it flow into the LED incorporated by each EE-SX301 Photomicrosen- possible to design systems using Photomicrosensors without sors. problem. A forward current equivalent to or exceeding the I value must FTON flow into the LED incorporated by the EE-SX401 Photomicrosen- ■ Design of Systems Incorporating sors. Photomicrosensors (2) The I value of the EE-SX301 is 8 mA maximum and so is the FTON I value of the EE-SX401. The forward current (I ) of LED FON F incorporated by the EE-SX301 in actual operation must be 8 mA or Photo IC Output more and so must the actual forward current of (I ) the LED F Figure 18 shows the circuit configuration of the EE-SX301 or EE- incorporated by the EE-SX401 in actual operation. The actual SX401 Photomicrosensor incorporating a photo IC output circuit. forward currents of the LEDs incorporated by the EE-SX301 and EE- The following explains the structure of a typical Photomicrosensor SX401 are limited by their absolute maximum forward currents with a photo IC output circuit. respectively. The upper limit of the actual forward current of the LED incorporated by the EE-SX301 and that of the LED incorporated by Figure 18. Circuit Configuration the EE-SX401 must be decided according Figure 19, which shows the temperature characteristics of the EE-SX301 and EE-SX401. The forward current (I ) of the EE-SX301 must be as large as F possible within the absolute maximum forward current and Voltage stabilizer maximum ambient temperature shown in Figure 19 and so must be + the forward current (I ) of the EE-SX401. The forward current (I ) of F F the EE-SX301 or that of the EE-SX401 must not be close to 8 mA, A otherwise the photo IC of the EE-SX301 or that of the EE-SX401 Temperature Schmitt compensation switching may not operate if there is any ambient temperature change, secular Output OUT preamplifier circuit transistor change that reduces the optical output of the LED, or dust sticking to the LED. The forward current (I ) values of the EE-SX301 and the F K EE-SX401 in actual operation must be twice as large as the I FOFF - values of the EE-SX301 and EE-SX401 respectively. Figure 20 Input Output (Si photo IC) shows the basic circuit of a typical Photomicrosensor with a photo IC (GaAs infrared LED) output circuit. If the Photomicrosensor with a photo IC output circuit is used to drive a relay, be sure to connect a reverse voltage absorption diode (D) to the relay in parallel as shown in Figure 21. Technical Information 21 Detector Circuit Precautions Supply a voltage within the absolute maximum supply voltage to the The following provides the instructions required for the operation of positive and negative terminals of the photo IC circuit shown in Photomicrosensors. Figure 18 and obtain a current within the I value of the output OUT transistor incorporated by the photo IC circuit. ■ Transmissive Photomicrosensor Incorporating Phototransistor Output Figure 19. Forward Current vs. Ambient Tempera ture Characteristics (EE-SX301/-SX401) Circuit When using a transmissive Photomicrosensor to sense the following objects, make sure that the transmissive Photomicrosensor operates properly. Highly permeable objects such as paper, film, and plastic Objects smaller than the size of the optical beam emitted by the LED or the size of the aperture of the detector. I • P F C The above objects do not fully intercept the optical beam emitted by the LED. Therefore, some part of the optical beam, which is considered noise, reaches the detector and a current flows from the phototransistor incorporated by the detector. Before sensing such type of objects, it is necessary to measure the light currents of the phototransistor with and without an object to make sure that the transmissive Photomicrosensor can sense objects without being interfered by noise. If the light current of the phototransistor sensing any one of the objects is I (N) and that of the phototransistor sensing L none of the objects is I (S), the signal-noise ratio of the L phototransistor due to the object is obtained from the following. S/N = I (S)/I (N) L L The light current (I ) of the phototransistor varies with the ambient L temperature and secular changes. Therefore, if the signal-noise ratio of the phototransistor is 4 maximum, it is necessary to pay utmost Ambient temperature Ta (°C) attention to the circuit connected to the transmissive Photomicrosensor so that the transmissive Photomicrosensor can Figure 20. Basic Circuit sense the object without problem. The light currents of phototransistors are different to one another. Therefore, when V CC multiple transmissive Photomicrosensors are required, a variable resistor must be connected to each transmissive Photomicrosensor Load as shown in Figure 22 if the light currents of the phototransistors greatly differ from one another. OUT Figure 22. Sensitivity Adjustment V CC GND Figure 21. Connected to Inductive Load Output V CC Relay GND The optical beam of the emitter and the aperture of the detector must be as narrow as possible. An aperture each can be attached to the emitter and detector to make the optical beam of the emitter and the aperture of the detector narrower. If apertures are attached to both the emitter and detector, however, the light current (I ) of the L phototransistor incorporated by the detector will decrease. It is GND desirable to attach apertures to both the emitter and detector. If an aperture is attached to the detector only, the transmissive Photomicrosensor will have trouble sensing the above objects when they pass near the emitter. Figure 23. Aperture Example Aperture 22 Technical Information Forward current I (mA) F Collector dissipation Pc (mW) When using the transmissive Photomicrosensor to sense any object Figure 27. Configuration of Reflective Photomicrosensor that vibrates, moves slowly, or has highly reflective edges, make sure to connect a proper circuit which processes the output of the Object transmissive Photomicrosensor so that the transmissive Photomicrosensor can operate properly, otherwise the transmissive Photomicrosensor may have a chattering output signal as shown in Figure 24. If this signal is input to a counter, the counter will have a Emitter element Detector element counting error or operate improperly. To protect against this, connect a 0.01- to 0.02-μF capacitor to the circuit as shown in Figure 25 or connect a Schmitt trigger circuit to the circuit as shown in Figure 26. Housing Figure 24. Chattering Output Signal V CC Output Figure 28. Light Interception Characteristics of Filters Chattering output GND Figure 25. Chattering Prevention (1) V CC EE-SF5 Output EE-SB5 GND Figure 26. Chattering Prevention (2) V CC Output Schmitt trigger circuit (IC) Wavelength l (nm) GND Figure 29. Influence of Background Object ■ Reflective Photomicrosensor Sensing object Incorporating Phototransistor Output Sensor Circuit When using a reflective Photomicrosensor to sense objects, pay attention to the following so that the reflective Photomicrosensor operates properly. External light interference Background condition of sensing objects Background object Output level of the LED With regard to the background conditions, the following description The reflective Photomicrosensor incorporates a detector element in is based on the assumption that the background is totally dark. the direction shown in Figure 27. Therefore, it is apt to be affected by Figure 29 shows that the optical beam emitted from the LED external light interference. The reflective Photomicrosensor, incorporated by a reflective Photomicrosensor is reflected by a therefore, incorporates a filter to intercept any light, the wavelength sensing object and background object. The optical beam reflected of which is shorter than a certain wavelength, to prevent external by the background object and received by the phototransistor light interference. The filter does not, however, perfectly intercept incorporated by the detector is considered noise that lowers the the light. Refer to Figure 28 for the light interception characteristics signal-noise ratio of the phototransistor. If any reflective of filters. A location with minimal external light interference is best Photomicrosensor is used to sense paper passing through the suited for the reflective Photomicrosensor. sensing area of the reflective Photomicrosensor on condition that there is a stainless steel or zinc-plated object behind the paper, the light current (I (N)) of the phototransistor not sensing the paper may L be larger than the light current (I (S)) of phototransistor sensing the L paper, in which case remove the background object, make a hole larger than the area of the sensor surface in the background object as shown in Figure 30, coat the surface of the background object with black lusterless paint, or roughen the surface of the background. Most malfunctions of a reflective Photomicrosensor are caused by an object located behind the sensing objects of the reflective Photomicrosensor. Unlike the output (i.e., I ) of any transmissive Photomicrosensor, the L Technical Information 23 Permeability (%) light current (I ) of a reflective Photomicrosensor greatly varies The light current (I ) of the phototransistor incorporated by the L L according to sensing object type, sensing distance, and sensing transmissive Photomicrosensor is output when there is no sensing object size. object in the sensing groove of the transmissive Photomicrosensor. On the other hand, the light current (I ) of the phototransistor L Figure 30. Example of Countermeasure incorporated by the reflective Photomicrosensor is output when there is a standard object specified by OMRON located in the standard sensing distance of the reflective Photomicrosensor. The light current (I ) of the phototransistor incorporated by the reflective L Cutout Photomicrosensor varies when the reflective Photomicrosensor senses any other type of sensing object located at a sensing distance other than the standard sensing distance. Figure 31 shows how the output of the phototransistor incorporated by the EE-SF5(- B) varies according to varieties of sensing objects and sensing distances. Before using the EE-SF5(-B) to sense any other type of sensing objects, measure the light currents of the phototransistor in actual operation with and without one of the sensing objects as shown in Figure 32. After measuring the light currents, calculate the Figure 31. Sensing Distance Characteristics signal-noise ratio of the EE-SF5(-B) due to the sensing object to (EE-SF5) make sure if the sensing objects can be sensed smoothly. The light current of the reflective Photomicrosensor is, however, several tens to hundreds of microamperes. This means that the absolute signal levels of the reflective Photomicrosensor are low. Even if the reflective Photomicrosensor in operation is not interfered by external light, the dark current (I ) and leakage current (I ) of the reflective D LEAK Photomicrosensor, which are considered noise, may amount to several to ten-odd microamperes due to a rise in the ambient temperature. This noise cannot be ignored. As a result, the signal- noise ratio of the reflective Photomicrosensor will be extremely low if the reflective Photomicrosensor senses any object with a low reflection ratio. a: Aluminum Pay utmost attention when applying the reflective Photomicrosensor b: White paper with a reflection factor to the sensing of the following. of 90% c: Pink paper Marked objects (e.g., White objects with a black mark each) d: OHP sheet e: Tracing paperMinute objects f: Black sponge Ta = 25° I = 20 mA F The above objects can be sensed if the signal-noise ratio of the V =10 V CE reflective Photomicrosensor is not too low. The reflective Photomicrosensor must be used with great care, otherwise it will not operate properly. Figure 32. Output Current Measurement Actual operation Distance d (mm) 24 Technical Information Light current I (μA) L Precautions 3. Do not mount Photomicrosensors to plates stained with machin- ■ Correct Use ing oil, otherwise the machining oil may cause cracks on the Pho- tomicrosensors. WARNING 4. Do not impose excessive forces on Photomicrosensors mounted Do not use this product in sensing devices designed to PCBs. Make sure that no continuous or instantaneous external to provide human safety. force exceeding 500 g (4.9 N) is imposed on any lead wire of the Photomicrosensors. Precautions for Safe Use PCB Mounting Holes Unless otherwise specified, the PCB to which a Photomicrosensor is · Use the product within the rated voltage range. mounted must have the following mounting holes. Applying voltages beyond the rated voltage ranges may result in damage or malfunction to the product. Four Terminals · Wire the product correctly and be careful with the power supply po- Four, 0.8±0.1 dia. Terminal pitch ±0.1 larities. Incorrect wiring may result in damage or malfunction to the product. · Connect the loads to the power supply. Do not short-circuit the Terminal loads. pitch ±0.1 Short-circuiting the loads may result in damage or malfunction to the product. Precautions for Correct Use ● Structure and Materials Five Terminals The emitter and detector elements of conventional Terminal pitch ±0.1 Photomicrosensors are fixed with transparent epoxy resin and the Five, 0.8±0.1 dia. main bodies are made of polycarbonate. Unlike ICs and transistors, which are covered with black epoxy resin, Photomicrosensors are subject to the following restrictions. 1. Low Heat Resistivity Terminal pitch ±0.1 The storage temperature of standard ICs and transistors is Terminal pitch ±0.1 approximately 150°C. The storage temperature of highly resistant Photomicrosensors is 100°C maximum. The heat resistance of the EE-SY169 Series which use ABS resin in the case, is particu- larly low (80°C maximum). 2. Low Mechanical Strength Black epoxy resin, which is used for the main bodies of ICs and ● Soldering transistors, contains additive agents including glass fiber to increase the heat resistivity and mechanical strength of the main Lead Wires bodies. Materials with additive agents cannot be used for the Make sure to solder the lead wires of Photomicrosensors so that no bodies of Photomicrosensors because Photomicrosensors must excessive force will be imposed on the lead wires. If an excessive maintain good optical permeability. Unlike ICs and transistors, forces is likely to be imposed on the lead wires, hold the bases of the Photomicrosensors must be handled with utmost care because lead wires. Photomicrosensors are not as heat or mechanically resistant as ICs and transistors. No excessive force must be imposed on the Soldering Temperature lead wires of Photomicrosensors. Regardless of the device being soldered, soldering should be completed quickly so that the devices are not subjected to thermal ● Mounting stress. Care is also required in the processing environment for Screw Mounting processes other than soldering so that the devices are not subject to thermal stress or other external force. If Photomicrosensors have screw mounting holes, the Photomicrosensors can be mounted with screws. Unless otherwise 1. Manual Soldering specified, refer to the following when tighten the screws. Unless otherwise specified, the lead wires of Photomicrosensors can be soldered manually under the following conditions. Hole diameter Screw size Tightening torque These conditions must also be maintained when using lead-free 1.5 dia. M1.4 0.20 N • m solder, i.e., soldering with lead-free solder is possible as long as the following conditions are maintained. 2.1 dia. M2 0.34 N • m Soldering temperature: 350°C max. (The temperature of the 3.2 dia. M3 0.54 N • m tip of a 30-W soldering iron is approxi- 4.2 dia. M4 0.54 N • m mately 320°C when the soldering iron is heated up.) Read the following before tightening the screws. Soldering time: 3 s max. 1. The use of a torque screwdriver is recommended to tighten each Soldering position: At least 1.5 mm away from the bases of the screws so that the screws can be tightened to the tighten- of the lead wires. ing torque required. The temperature of the tip of any soldering iron depends on the 2. The use of a screw with a spring washer and flat washer for the shape of the tip. Check the temperature with a thermometer mounting holes of a Photomicrosensor is recommended. If a before soldering the lead wires. A highly resistive soldering iron screw with a spring washer but without a flat washer is used for incorporating a ceramic heater is recommended for soldering the any mounting hole, the part around the mounting hole may crack. lead wires. Precautions 25 2. Dip Soldering 2. Cleaning Method The lead wires of Photomicrosensors can be dip-soldered under Unless otherwise specified, Photomicrosensors other than the the following conditions unless otherwise specified. EE-SA105 and EE-SA113 can be cleaned under the following conditions. Do not apply an unclean detergent to the Photomi- Preheating temperature: Must not exceed the storage tempera- crosensors. ture of the Photomicrosensors. DIP cleaning: OK Soldering temperature: 260°C max. (the lead wires) Ultrasonic cleaning: Depends on the equipment and the PCB Soldering time: 10 s max. size. Before cleaning Photomicrosen- Soldering position: At least 0.3 mm away from the bases sors, conduct a cleaning test with a single of the housing. Photomicrosensor and make sure that the The soldering temperature is specified as the temperature Photomicrosensor has no broken lead applied to the lead terminals. Do not subject the cases to wires after the Photomicrosensor is temperatures higher than the maximum storage temperature. It is cleaned. also possible for the sensor case to melt due to residual heat of Brushing: The marks on Photomicrosensors may be the PCB. When using a PCB with a high thermal capacity (e.g., brushed off. The emitters and detectors of those using fiber-glass reinforced epoxy substrates), confirm that reflective Photomicrosensors may have the case is not deformed and install cooling devices as required scratches and deteriorate when they are to prevent distortion. Particular care is required for the EE-SY169 brushed. Before brushing Photomicrosen- Series, which use ABS resin in the case. sors, conduct a brushing test with a single Do not use non-washable flux when soldering EE-SA-series Photomicrosensor and make sure that the Photomicrosensors, otherwise the Photomicrosensors will have Photomicrosensor is not damaged after it operational problems. For other Photomicrosensors, check the is brushed. case materials and optical characteristics carefully to be sure that residual flux does not adversely affect them. ● Operating and Storage Temperatures 3. Reflow Soldering Observe the upper and lower limits of the operating and storage The reflow soldering of Photomicrosensors is not possible except temperature ranges for all devices and do not allow excessive for the EE-SX1107, -SX1108, -SX1109, -SX1131, -SX4134 and changes in temperature. As explained in the restrictions given in EE-SY193. The reflow soldering of these products must be per- Structure and Materials, elements use clear epoxy resin, giving them formed carefully under the conditions specified in the datasheets less resistance to thermal stress than normal ICs or transistors of these products, respectively. Before performing the reflow sol- (which are sealed with black epoxy resin). Refer to reliability test dering of these products, make sure that the reflow soldering results and design PCBs so that the devices are not subjected to equipment satisfies the conditions. excessive thermal stress. Compared to general ICs, optical devices have a lower resis- Even for applications within the operating temperature range, care tance to heat. This means the reflow temperature must be set to must also be taken to control the humidity. As explained in the a lower temperature. Observe the temperature provides provided restrictions given in Structure and Materials, elements use clear in the specifications when mounting optical devices. epoxy resin, giving them less resistance to humidity than normal ICs 4. External Forces Immediately Following Soldering or transistors (which are sealed with black epoxy resin). Refer to The heat resistance and mechanical strength of Photomicrosen- reliability test results and design PCBs so that the devices are not sors are lower than those of ICs or transistors due to their physi- subjected to excessive thermal stress. Photomicrosensors are cal properties. Care must thus be exercised immediately after designed for application under normal humidities. When using them soldering (particularly for dip soldering) so that external forces in humidified or dehumidified, high-humidity or low-humidity, are not applied to the Photomicrosensors. environments, test performance sufficiently for the application. External Forces ● LED Drive Currents The heat resistivity and mechanical strength of Photomicrosensors Photomicrosensors consist of LEDs and light detectors. Generally are lower than those of ICs or transistors. Do not to impose external speaking, temporal changes occur to LEDs when power is supplied force on Photomicrosensors immediately after the to them (i.e., the amount of light emitted diminishes). With less light, Photomicrosensors are soldered. Especially, do not impose external the photoelectric current is reduced for a sensor with a force on Photomicrosensors immediately after the phototransistor output or the threshold current is increased for a Photomicrosensors are dip-soldered. sensor with a photo-IC output. Design circuits with sufficient consideration to the decline in the emitted light level. The reduction ● Cleaning Precautions in emitted light is far greater for red LEDs than for infrared LEDs. Also, with red LEDs that contain aluminum, aluminum oxide will form Cleaning if they are powered under high humidities, calling for a greater need Photomicrosensors except the EE-SA105 and EE-SA113 can be for consideration of the decline in the emitted light level. cleaned subject to the following restrictions. ● Light Interceptors 1. Types of Detergent Select a material for the light interceptor with superior interception Polycarbonate is used for the bodies of most Photomicrosensors. properties. If a material with inferior light interception properties, Some types of detergent dissolve or crack polycarbonate. Before such as a plastic that is not black, is used, light may penetrate the cleaning Photomicrosensors, refer to the following results of interceptor and cause malfunction. With Photomicrosensors, most of experiments, which indicate what types of detergent are suitable which use infrared LEDs, a material that appears black to the human for cleaning Photomicrosensors other than the EE-SA105 and eye (i.e., in the visible light range) may be transparent to infrared EE-SA113. light. Select materials carefully. Observe the law and prevent against any environmental damage when using any detergent. Results of Experiments Ethyl alcohol: OK Methyl alcohol: OK Isopropyl alcohol: OK Trichlene: NG Acetone: NG Methylbenzene: NG Water (hot water): The lead wires corrode depending on the conditions 26 Precautions Guideline for Light Interceptors When measuring the light interception properties of the light interceptor, use 0.1% maximum light transmission as a guideline. I F Vcc I L OUT R F R L GND Criteria Where, I is the I for light reception L1 L I is the I for light interception by the intercepter L2 L V is the threshold voltage TH I is the I for measurement of I given in product specifications F1 F L I is the I in actual application ( = (V − V )/R = (V − 1.2)/R ) F2 F CC F F CC F I is the standard upper limit of the optical current I LMAX L Then, Light transmission = I /I = α L2 L1 Here there should be no problems if the following equation is satisfied. V ≥ (I /I ) × I × R × α TH F2 F1 LMAX L Caution is required, however, because there are inconsistencies in light transmission. ● Reflectors The reflectors for most Photomicrosensors are standardized to white paper with a reflection ratio of 90%. Design the system to allow for any differences in the reflection ratio of the detection object. With Photomicrosensors, most of which use infrared LEDs, a material that appears black to the human eye (i.e., in the visible light range) may have a higher reflection ratio. Select materials carefully. Concretely, marks made with dye-based inks or marks made with petrolium- based magic markers (felt pens) can have the same reflection ratio for infrared light as white paper. The reflectors for most Photomicrosensors are standardized to white paper with a reflection ratio of 90%. Paper, however, disperses light relatively easily, reducing the effect of the detection angle. Materials with mirrored surfaces, on the other hand, show abrupt changes in angle characteristics. Check the reflection ratio and angles sufficiently for the application. The output from most Photomicrosensors is determined at a specified distance. Characteristics will vary with the distance. Carefully check characteristics at the specific distance for the application. ● Output Stabilization Time Photomicrosensors with photo-IC outputs require 100 ms for the internal IC to stabilize. Set the system so that the output is not read for 100 ms after the power supply is turned ON. Also be careful if the power supply is turned OFF in the application to save energy when the Photomicrosensor is not used. When using a Photomicrosensor with a phototransistor output outside of the saturation region, stabilization time is required to achieve thermal balance. Care is required when using a variable resistor or other adjustment. Precautions 27 Application Examples Most People May Not Realize the Fact that Photomicrosensors are Built Into Machines and Equipment that are Used Everyday Office Automation Machines Copy machines Facsimiles Printers X-Y plotters Mouse Image scanners FDD Photomicrosensor Household products Others Automatic vending machines VCRs Cameras Camcorders Slot machines Audio equipment Garage doors Microwave ovens Pinball machines Air conditioners Game machines Fan heaters Vacuum cleaners 28 Application Examples ■ Application Examples Classification Products Sensing example Household products VCRs Rotating reel sensing and tape sensing Camcorders Lens origin sensing and lens control Laserdisc players Rotation sensing and disk size sensing Air conditioners/Fan heaters Louver direction sensing and fan motor rotation sensing Microwave ovens Turntable sensing Vacuum cleaners Carpet and floor discrimination Office automation ma- Printers Origin sensing, paper sensing, paper size sensing, and ink ribbon chines end sensing Copy machines Paper sensing, cassette sensing, and toner sensing Facsimiles Paper sensing, black end mark sensing, paper size sensing Floppy disk drives Disk sensing, origin sensing, and write protect sensing Optical disk drives Disk sensing, disk type sensing, and write protection sensing Image scanners Origin sensing and movement value sensing Mouse Movement direction sensing and movement value sensing X-Y plotters Paper sensing, origin sensing, pen sensing, and movement value sensing Others Automatic vending machines/Ticket machines Coin sensing, coin discrimination, and ticket sensing Cameras Film forwarding, lens control, and motor control Cash dispensers Card sensing, bill sensing, mechanical control Robot/Machine tools Mechanical control Sewing machines Motor rotation sensing and needle position sensing Pinball machines Ball sensing, mechanical control, and sensing of remaining balls Slot machines Coil sensing and lever sensing Game machines Prize sensing, coil sensing, and mechanical control Garage doors Door opening and closing sensing Application Examples 29 Photomicrosensor (Transmissive) EE-SX1018 Be sure to read Precautions on page 25. ■ Dimensions ■ Features Compact model with a 2-mm-wide slot. Note: All units are in millimeters unless otherwise indicated. PCB mounting type. High resolution with a 0.5-mm-wide aperture. ■ Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rated value 0.5±0.05 Four, C0.3 Emitter Forward current I 50 mA F (see note 1) Optical Pulse forward current I 1 A FP axis (see note 2) Reverse voltage V 4 V R Detector Collector–Emitter V 30 V CEO voltage Emitter–Collector V --- ECO Four, 0.5 voltage Four, 0.25 Collector current I 20 mA C Collector dissipation P 100 mW Cross section AA C (see note 1) Ambient tem- Operating Topr –25°C to 85°C perature Storage Tstg –30°C to 100°C Internal Circuit Soldering temperature Tsol 260°C K C Unless otherwise specified, the (see note 3) tolerances are as shown below. Note: 1. Refer to the temperature rating chart if the ambient temper- A E ature exceeds 25°C. Dimensions Tolerance 2. The pulse width is 10 μs maximum with a frequency of 3 mm max. ±0.3 100 Hz. Terminal No. Name 3 < mm ≤ 6 ±0.375 3. Complete soldering within 10 seconds. A Anode 6 < mm ≤ 10 ±0.45 K Cathode 10 < mm ≤ 18 ±0.55 C Collector 18 < mm ≤ 30 ±0.65 E Emitter ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 30 mA F F Reverse current I 0.01 μA typ., 10 μA max. V = 4 V R R Peak emission wavelength λ 940 nm typ. I = 20 mA P F Detector Light current I 0.5 mA min., 14 mA max. I = 20 mA, V = 10 V L F CE Dark current I 2 nA typ., 200 nA max. V = 10 V, 0 lx D CE Leakage current I --- --- LEAK Collector–Emitter saturated voltage V (sat) 0.1 V typ., 0.4 V max. I = 20 mA, I = 0.1 mA CE F L Peak spectral sensitivity wavelength λ 850 nm typ. V = 10 V P CE Rising time tr 4 μs typ. V = 5 V, R = 100 Ω, I = 5 mA CC L L Falling time tf 4 μs typ. V = 5 V, R = 100 Ω, I = 5 mA CC L L 30 EE-SX1018 Photomicrosensor (Transmissive) ■ Engineering Data Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) Ta = 25°C V = 10 V IF CE Ta = −30°C PC Ta = 25°C Ta = 70°C Ambient temperature Ta (°C) Forward voltage V (V) Forward current I (mA) F F Light Current vs. Collector−Emitter Relative Light Current vs. Ambi- Dark Current vs. Ambient Voltage Characteristics (Typical) ent Temperature Characteristics Temperature Characteristics (Typical) (Typical) V = 10 V Ta = 25°C CE I = 50 mA F I = 20 mA F 0 lx V = 5 V CE I = 40 mA F I = 30 mA F I = 20 mA F I = 10 mA F Ambient temperature Ta (°C) Collector−Emitter voltage V (V) Ambient temperature Ta (°C) CE Sensing Position Characteristics Sensing Position Characteristics Response Time vs. Load Resist- (Typical) (Typical) ance Characteristics (Typical) 120 V = 5 V I = 20 mA CC F Ta = 25°C V = 10 V CE I = 20 mA F Ta = 25°C V = 10 V CE 100 Ta = 25°C (Center of optical axis) 80 d 60 40 20 0 −2.0 −1.5 −1.0 −0.5 0 0.5 1.0 1.5 2.0 Distance d (mm) Load resistance R (kΩ) Distance d (mm) L Response Time Measurement Circuit Input 90 % 10 % Output Input Output EE-SX1018 Photomicrosensor (Transmissive) 31 Response time tr, tf (μs) Light current I (mA) L Forward current I (mA) F Collector dissipation P (mW) C Relative light current I (%) L Relative light current I (%) L Forward current I (mA) F Relative light current I (%) L Dark current I (nA) D Light current I (mA) L (Center of optical axis) Photomicrosensor (Transmissive) EE-SX1035 Be sure to read Precautions on page 25. ■ Dimensions ■ Features Compact model with a 5.2-mm-wide slot. Note: All units are in millimeters unless otherwise indicated. PCB mounting type. ■ Absolute Maximum Ratings (Ta = 25°C) 6.3 Item Symbol Rated value Emitter Forward current I 50 mA F (see note 1) 1±0.1 1±0.1 Pulse forward cur- I 1 A 1±0.1 FP Optical axis rent (see note 2) Reverse voltage V 4 V R Detector Collector–Emitter V 30 V CEO Four, 0.25 Four, 0.5 voltage Emitter–Collector V 5 V Cross section AA Cross section BB ECO (2.5) voltage Collector current I 20 mA C Collector dissipa- P 100 mW C tion (see note 1) Ambient tem- Operating Topr –25°C to 85°C perature Storage Tstg –30°C to Internal Circuit 100°C Soldering temperature Tsol 260°C K C Unless otherwise specified, the (see note 3) tolerances are as shown below. Note: 1. Refer to the temperature rating chart if the ambient temper- A E Dimensions Tolerance ature exceeds 25°C. 2. The pulse width is 10 μs maximum with a frequency of 3 mm max. ±0.2 100 Hz. Terminal No. Name 3 < mm ≤ 6 ±0.24 3. Complete soldering within 10 seconds. A Anode 6 < mm ≤ 10 ±0.29 K Cathode 10 < mm ≤ 18 ±0.35 C Collector 18 < mm ≤ 30 ±0.42 E Emitter ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 30 mA F F Reverse current I 0.01 μA typ., 10 μA max. V = 4 V R R Peak emission wavelength λ 940 nm typ. I = 20 mA P F Detector Light current I 0.5 mA min. I = 20 mA, V = 10 V L F CE Dark current I 2 nA typ., 200 nA max. V = 10 V, 0 lx D CE Leakage current I --- --- LEAK Collector–Emitter saturated volt- V (sat) 0.15 V typ., 0.4 V max. I = 20 mA, I = 0.1 mA CE F L age Peak spectral sensitivity wave- λ 850 nm typ. V = 10 V P CE length Rising time tr 4 μs typ. V = 5 V, R = 100 Ω, I = 5 mA CC L L Falling time tf 4 μs typ. V = 5 V, R = 100 Ω, I = 5 mA CC L L 32 EE-SX1035 Photomicrosensor (Transmissive) ■ Engineering Data Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) Ta = 25°C IF V = 10 V CE Ta = −30°C PC Ta = 25°C Ta = 70°C Ambient temperature Ta (°C) Forward voltage V (V) Forward current I (mA) F F Relative Light Current vs. Ambi- Light Current vs. Collector−Emitter Dark Current vs. Ambient ent Temperature Characteristics Voltage Characteristics (Typical) Temperature Characteristics (Typical) (Typical) Ta = 25°C V = 10 V I = 20 mA CE F 0 lx V = 5 V CE I = 50 mA F I = 40 mA F I = 30 mA F I = 20 mA F I = 10 mA F Collector−Emitter voltage V (V) CE Ambient temperature Ta (°C) Ambient temperature Ta (°C) Sensing Position Characteristics Response Time vs. Load Resist- Sensing Position Characteristics (Typical) ance Characteristics (Typical) (Typical) 120 V = 5 V CC I = 20 mA F I = 20 mA Ta = 25°C F V = 10 V CE V = 10 V CE Ta = 25°C 100 Ta = 25°C (Center of optical axis) 80 d 60 40 20 0 −2.0 −1.5 −1.0 −0.5 0 0.5 1.0 1.5 2.0 Load resistance R (kΩ) Distance d (mm) L Distance d (mm) Response Time Measurement Circuit Input 90 % Output 10 % Input Output EE-SX1035 Photomicrosensor (Transmissive) 33 Response time tr, tf (μs) Light current I (mA) L Forward current I (mA) F Collector dissipation P (mW) C Relative light current I (%) L Relative light current I (%) L Forward current I (mA) F Relative light current I (%) Dark current I (nA) L D Light current I (mA) L (Center of optical axis) Photomicrosensor (Transmissive) EE-SX1041 Be sure to read Precautions on page 25. ■ Dimensions ■ Features General-purpose model with a 5-mm-wide slot. Note: All units are in millimeters unless otherwise indicated. PCB mounting type. 0.2 max. 0.2 max. High resolution with a 0.5-mm-wide aperture. 14±0.2 +0.2 5 −0.1 ■ Absolute Maximum Ratings (Ta = 25°C) 6±0.2 Item Symbol Rated value 0.5±0.1 0.2 Emitter Forward current I 50 mA F (see note 1) Pulse forward cur- I 1 A Optical 2.2 FP axis rent (see note 2) 0 10 −0.2 7.5±0.2 Reverse voltage V 4 V R 2.5 Detector Collector–Emitter V 30 V CEO voltage 5 min. Two, 0.7± 0.1 Emitter–Collector V --- ECO Four, 0.25 voltage (9) Four, 0.5 5.2±0.1 Collector current I 20 mA C K C (Two, 2.54) Collector dissipa- P 100 mW C tion (see note 1) Ambient tem- Operating Topr –25°C to 95°C AE Two, 0.7±0.1 dia. perature 2.35±0.1 6.6±0.1 Storage Tstg –30°C to 100°C Internal Circuit Soldering temperature Tsol 260°C K C (see note 3) Unless otherwise specified, the tolerances are as shown below. Note: 1. Refer to the temperature rating chart if the ambient temper- ature exceeds 25°C. A E Dimensions Tolerance 2. The pulse width is 10 μs maximum with a frequency of 100 Hz. 3 mm max. ±0.3 Terminal No. Name 3. Complete soldering within 10 seconds. 3 < mm ≤ 6 ±0.375 A Anode 6 < mm ≤ 10 ±0.45 K Cathode 10 < mm ≤ 18 ±0.55 C Collector E Emitter 18 < mm ≤ 30 ±0.65 ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 30 mA F F Reverse current I 0.01 μA typ., 10 μA max. V = 4 V R R Peak emission wavelength λ 940 nm typ. I = 20 mA P F Detector Light current I 0.5 mA min., 14 mA max. I = 20 mA, V = 10 V L F CE Dark current I 2 nA typ., 200 nA max. V = 10 V, 0 lx D CE Leakage current I --- --- LEAK Collector–Emitter saturated volt- V (sat) 0.1 V typ., 0.4 V max. I = 20 mA, I = 0.1 mA CE F L age Peak spectral sensitivity wave- λ 850 nm typ. V = 10 V P CE length Rising time tr 4 μs typ. V = 5 V, R = 100 Ω, I = 5 mA CC L L Falling time tf 4 μs typ. V = 5 V, R = 100 Ω, I = 5 mA CC L L 34 EE-SX1041 Photomicrosensor (Transmissive) ■ Engineering Data Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) Ta = 25°C IF V = 10 V CE Ta = −30°C PC Ta = 25°C Ta = 70°C Forward voltage V (V) Forward current I (mA) Ambient temperature Ta (°C) F F Light Current vs. Collector−Emitter Dark Current vs. Ambient Relative Light Current vs. Ambi- Voltage Characteristics (Typical) Temperature Characteristics ent Temperature Characteristics (Typical) (Typical) Ta = 25°C I = 20 mA V = 10 V F CE V = 5 V 0 lx CE I = 50 mA F I = 40 mA F I = 30 mA F I = 20 mA F I = 10 mA F Ambient temperature Ta (°C) Collector−Emitter voltage V (V) CE Ambient temperature Ta (°C) Response Time vs. Load Resist- Sensing Position Characteristics Sensing Position Characteristics ance Characteristics (Typical) (Typical) (Typical) 120 V = 5 V CC I = 20 mA F I = 20 mA F Ta = 25°C V = 10 V CE V = 10 V CE Ta = 25°C 100 Ta = 25°C (Center of optical axis) 80 d 60 40 20 0 −2.0 −1.5 −1.0 −0.5 0 0.5 1.0 1.5 2.0 Distance d (mm) Load resistance R (kΩ) L Distance d (mm) Response Time Measurement Circuit Input 90 % Output 10 % Input Output EE-SX1041 Photomicrosensor (Transmissive) 35 Response time tr, tf (μs) Light current I (mA) L Forward current I (mA) F Collector dissipation P (mW) C Relative light current I (%) L Relative light current I (%) Forward current I (mA) L F Relative light current I (%) L Dark current I (nA) D Light current I (mA) L (Center of optical axis) Photomicrosensor (Transmissive) EE-SX1042 Be sure to read Precautions on page 25. ■ Dimensions ■ Features 14.5-mm-tall model with a deep slot. Note: All units are in millimeters unless otherwise indicated. PCB mounting type. Four, C0.3 High resolution with a 0.5-mm-wide aperture. ■ Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rated value 0.5±0.05 Emitter Forward current I 50 mA F (see note 1) Pulse forward cur- I 1 A FP rent (see note 2) 14.5 Reverse voltage V 4 V R 12±0.4 Detector Collector–Emitter V 30 V CEO voltage Emitter–Collector V --- ECO 5 min. voltage Four, 0.25 Collector current I 20 mA C (11.2) (1.92) Collector dissipa- P 100 mW C tion (see note 1) Cross section AA Ambient tem- Operating Topr –25°C to 85°C perature Storage Tstg –30°C to 100°C Soldering temperature Tsol 260°C Internal Circuit (see note 3) K C Unless otherwise specified, the Note: 1. Refer to the temperature rating chart if the ambient temper- ature exceeds 25°C. tolerances are as shown below. 2. The pulse width is 10 μs maximum with a frequency of A E Dimensions Tolerance 100 Hz. 3. Complete soldering within 10 seconds. 3 mm max. ±0.3 Terminal No. Name 3 < mm ≤ 6 ±0.375 A Anode 6 < mm ≤ 10 ±0.45 K Cathode 10 < mm ≤ 18 ±0.55 C Collector E Emitter 18 < mm ≤ 30 ±0.65 ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 30 mA F F Reverse current I 0.01 μA typ., 10 μA max. V = 4 V R R Peak emission wavelength λ 940 nm typ. I = 20 mA P F Detector Light current I 0.5 mA min., 10 mA max. I = 20 mA, V = 10 V L F CE Dark current I 2 nA typ., 200 nA max. V = 10 V, 0 lx D CE Leakage current I --- --- LEAK Collector–Emitter saturated volt- V (sat) 0.1 V typ., 0.4 V max. I = 20 mA, I = 0.1 mA CE F L age Peak spectral sensitivity wave- λ 850 nm typ. V = 10 V P CE length Rising time tr 4 μs typ. V = 5 V, R = 100 Ω, I = 5 mA CC L L Falling time tf 4 μs typ. V = 5 V, R = 100 Ω, I = 5 mA CC L L 36 EE-SX1042 Photomicrosensor (Transmissive) ■ Engineering Data Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) Ta = 25°C IF V = 10 V CE Ta = −30°C PC Ta = 25°C Ta = 70°C Ambient temperature Ta (°C) Forward current I (mA) Forward voltage V (V) F F Dark Current vs. Ambient Relative Light Current vs. Ambi- Light Current vs. Collector−Emitter Temperature Characteristics ent Temperature Characteristics Voltage Characteristics (Typical) (Typical) (Typical) Ta = 25°C V = 10 V I = 20 mA CE F 0 lx V = 5 V CE I = 50 mA F I = 40 mA F I = 30 mA F I = 20 mA F I = 10 mA F Collector−Emitter voltage V (V) CE Ambient temperature Ta (°C) Ambient temperature Ta (°C) Response Time vs. Load Resist- Sensing Position Characteristics Sensing Position Characteristics ance Characteristics (Typical) (Typical) (Typical) 120 V = 5 V CC I = 20 mA F I = 20 mA Ta = 25°C F V = 10 V CE VCE = 10 V Ta = 25°C 100 Ta = 25°C (Center of optical axis) 80 d 60 40 20 0 −2.0 −1.5 −1.0 −0.5 0 0.5 1.0 1.5 2.0 Load resistance R (kΩ) L Distance d (mm) Distance d (mm) Response Time Measurement Circuit Input 90 % Output 10 % Input Output EE-SX1042 Photomicrosensor (Transmissive) 37 Response time tr, tf (μs) Light current I (mA) L Forward current I (mA) F Collector dissipation P (mW) C Relative light current I (%) Relative light current I (%) L Forward current I (mA) L F Relative light current I (%) L Dark current I (nA) D Light current I (mA) L (Center of optical axis) Photomicrosensor (Transmissive) EE-SX1046 Be sure to read Precautions on page 25. ■ Dimensions ■ Features With a horizontal sensing aperture. Note: All units are in millimeters unless otherwise indicated. PCB mounting type. High resolution with a 0.5-mm-wide aperture. 6.5 ■ Absolute Maximum Ratings (Ta = 25°C) Optical axis 5 2.5 Item Symbol Rated value Emitter Forward current I 50 mA F 10±0.3 (see note 1) 0.5±0.1 Pulse forward cur- I 1 A FP rent (see note 2) 0.5±0.1 Optical axis Reverse voltage V 4 V Optical R axis Detector Collector–Emitter V 30 V CEO voltage Four, 0.25 Emitter–Collector V --- 9 min. ECO 0.3 max. 0.25 voltage Four, 0.25 max. Collector current I 20 mA C Collector dissipa- P 100 mW C Cross section BB Cross section AA tion (see note 1) Ambient tem- Operating Topr –25°C to 85°C perature Storage Tstg –30°C to Internal Circuit 100°C K C Soldering temperature Tsol 260°C Unless otherwise specified, the (see note 3) tolerances are as shown below. Note: 1. Refer to the temperature rating chart if the ambient temper- A E Dimensions Tolerance ature exceeds 25°C. 2. The pulse width is 10 μs maximum with a frequency of 3 mm max. ±0.3 100 Hz. Terminal No. Name 3 < mm ≤ 6 ±0.375 3. Complete soldering within 10 seconds. A Anode 6 < mm ≤ 10 ±0.45 K Cathode 10 < mm ≤ 18 ±0.55 C Collector 18 < mm ≤ 30 ±0.65 E Emitter ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 30 mA F F Reverse current I 0.01 μA typ., 10 μA max. V = 4 V R R Peak emission wavelength λ 920 nm typ. I = 20 mA P F Detector Light current I 1.2 mA min., 14 mA max. I = 20 mA, V = 5 V L F CE Dark current I 2 nA typ., 200 nA max. V = 10 V, 0 lx D CE Leakage current I --- --- LEAK Collector–Emitter saturated volt- V (sat) 0.1 V typ., 0.4 V max. I = 20 mA, I = 0.1 mA CE F L age Peak spectral sensitivity wave- λ 850 nm typ. V = 10 V P CE length Rising time tr 4 μs typ. V = 5 V, R = 100 Ω, I = 5 mA CC L L Falling time tf 4 μs typ. V = 5 V, R = 100 Ω, I = 5 mA CC L L 38 EE-SX1046 Photomicrosensor (Transmissive) ■ Engineering Data Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) Ta = 25°C V = 10 V IF CE Ta = −30°C PC Ta = 25°C Ta = 70°C Forward current I (mA) F Ambient temperature Ta (°C) Forward voltage V (V) F Relative Light Current vs. Ambi- Light Current vs. Collector−Emitter Dark Current vs. Ambient ent Temperature Characteristics Voltage Characteristics (Typical) Temperature Characteristics (Typical) (Typical) V = 10 V Ta = 25°C I = 20 mA CE F 0 lx V = 5 V CE I = 50 mA F I = 40 mA F I = 30 mA F I = 20 mA F I = 10 mA F Collector−Emitter voltage V (V) Ambient temperature Ta (°C) CE Ambient temperature Ta (°C) Response Time vs. Load Resist- Sensing Position Characteristics Sensing Position Characteristics ance Characteristics (Typical) (Typical) (Typical) 120 120 V = 5 V I = 20 mA CC F I = 20 mA F Ta = 25°C V = 5 V CE V = 10 V CE 100 Ta = 25°C 100 Ta = 25°C (Center of 80 80 optical axis) d d 60 60 40 40 20 20 0 0 −0.75 −0.5 −0.25 0 0.25 0.5 0.75 −1.5 −1.0 −0.5 0 0.5 1.0 1.5 Distance d (mm) Distance d (mm) Load resistance R (kΩ) L Response Time Measurement Circuit Input 90 % Output 10 % Input Output EE-SX1046 Photomicrosensor (Transmissive) 39 Response time tr, tf (μs) Light current I (mA) L Forward current I (mA) F Collector dissipation P (mW) C Relative light current I (%) Relative light current I (%) L L Forward current I (mA) F (Center of optical axis) Dark current I (nA) D Relative light current I (%) L Light current I (mA) L Photomicrosensor (Transmissive) EE-SX1049 Be sure to read Precautions on page 25. ■ Dimensions ■ Features Compact with a slot width of 2 mm. Note: All units are in millimeters unless otherwise indicated. PCB mounting type. 9 High resolution with a 0.5-mm-wide aperture. 4 Optical ■ Absolute Maximum Ratings (Ta = 25°C) axis Four, C0.3 Item Symbol Rated value 2 Emitter Forward current I 50 mA Two, 0.5 F AB (see note 1) 1.5 Pulse forward cur- I 1 A 2 max. 2 max. FP Optical Optical Optical axis 0 axis rent (see note 2) 5.2 −0.2 axis Reverse voltage V 4 V R 1.5 1.2 Detector Collector–Emitter V 30 V CEO 9 min. voltage Four, 0.25 Emitter–Collector V --- 0.7±0.1 ECO C0.3 Four, 0.5 0.3 max. 0.25 max. voltage 0 1.2 dia. −0.05 EC 2.5 KA 2.5 Collector current I 20 mA AB C Cross section AA Cross section BB 6±0.2 Collector dissipa- P 100 mW C Internal Circuit tion (see note 1) K C Ambient tem- Operating Topr –25°C to 85°C Unless otherwise specified, the perature Storage Tstg –30°C to 100°C tolerances are as shown below. Soldering temperature Tsol 260°C A E Dimensions Tolerance (see note 3) 3 mm max. ±0.3 Note: 1. Refer to the temperature rating chart if the ambient temper- Terminal No. Name ature exceeds 25°C. 3 < mm ≤ 6 ±0.375 A Anode 2. The pulse width is 10 μs maximum with a frequency of 6 < mm ≤ 10 ±0.45 100 Hz. K Cathode 10 < mm ≤ 18 ±0.55 3. Complete soldering within 10 seconds. C Collector E Emitter 18 < mm ≤ 30 ±0.65 ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 30 mA F F Reverse current I 0.01 μA typ., 10 μA max. V = 4 V R R Peak emission wavelength λ 940 nm typ. I = 20 mA P F Detector Light current I 0.5 mA min., 14 mA max. I = 20 mA, V = 10 V L F CE Dark current I 2 nA typ., 200 nA max. V = 10 V, 0 lx D CE Leakage current I --- --- LEAK Collector–Emitter saturated volt- V (sat) 0.1 V typ., 0.4 V max. I = 20 mA, I = 0.1 mA CE F L age Peak spectral sensitivity wave- λ 850 nm typ. V = 10 V P CE length Rising time tr 4 μs typ. V = 5 V, R = 100 Ω, I = 5 mA CC L L Falling time tf 4 μs typ. V = 5 V, R = 100 Ω, I = 5 mA CC L L 40 EE-SX1049 Photomicrosensor (Transmissive) ■ Engineering Data Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) 150 60 10 60 Ta = 25°C V = 10 V CE IF 50 50 8 Ta = −30°C PC 100 40 Ta = 25°C 40 6 Ta = 70°C 30 30 4 50 20 20 2 10 10 0 0 0 0 0 10 20 30 40 50 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 −40 −20 0 20 40 60 80 100 Forward voltage V (V) Forward current I (mA) Ambient temperature Ta (°C) F F Relative Light Current vs. Ambi- Light Current vs. Collector−Emitter Dark Current vs. Ambient ent Temperature Characteristics Voltage Characteristics (Typical) Temperature Characteristics (Typical) (Typical) 20 120 10,000 I = 50 mA Ta = 25°C F V = 10 V CE I = 20 mA F 18 0 lx V = 10 V CE 1,000 110 I = 40 mA 16 F 14 100 100 I = 30 mA 12 F 10 10 90 1 I = 20 mA 8 F 80 6 0.1 I = 10 mA F 4 70 0.01 2 0.001 60 0123456 789 10 0 80 −40 −20 0 20 40 60 80 100 −30 −20 −10 10 20 30 40 50 60 70 90 Collector−Emitter voltage V (V) CE Ambient temperature Ta (°C) Ambient temperature Ta (°C) Response Time vs. Load Resist- Sensing Position Characteristics Sensing Position Characteristics ance Characteristics (Typical) (Typical) (Typical) 10,000 120 120 I = 20 mA F V = 5 V CC V = 10 V CE Ta = 25°C I = 20 mA F Ta = 25°C V = 10 V CE 100 100 Ta = 25°C (Center of optical axis) 1,000 d 80 80 tf 100 d 60 60 40 40 tr 10 20 20 1 0 0 0.01 0.1 1 10 −0.5 −0.25 0 0.25 0.5 0.75 1.0 −2.0 −1.5 −1.0 −0.5 0 0.5 1.0 1.5 2.0 Load resistance R (kΩ) Distance d (mm) L Distance d (mm) Response Time Measurement Circuit Input 0 t Output 90 % 0 10 % t t r t f Input IL VCC Output RL EE-SX1049 Photomicrosensor (Transmissive) 41 Response time tr, tf (μs) Light current I (mA) L Forward current I (mA) F Collector dissipation P (mW) C Relative light current I (%) Relative light current I (%) L L Forward current I (mA) F Relative light current I (%) L Dark current I (nA) D Light current I (mA) L (Center of optical axis) Photomicrosensor (Transmissive) EE-SX1055 Be sure to read Precautions on page 25. ■ Dimensions ■ Features Longer leads allow the sensor to be mounted to a 1.6-mm thick Note: All units are in millimeters unless otherwise indicated. board. 0.2 max. 0.2 max.5.4-mm-tall compact model. PCB mounting type. High resolution with a 0.5-mm-wide aperture. ■ Absolute Maximum Ratings (Ta = 25°C) Four, 5° 0.5±0.05 Item Symbol Rated value White band Emitter Forward current I 50 mA F Optical (see note 1) axis 5.4±0.2 Pulse forward cur- I 1 A FP rent (see note 2) Reverse voltage V 4 V R 3.6±0.5 Detector Collector–Emitter V 30 V CEO Four, 0.5 Four, 0.25 voltage Cross section AA Emitter–Collector V --- ECO voltage Collector current I 20 mA C Collector dissipa- P 100 mW C tion (see note 1) Ambient tem- Operating Topr –25°C to 85°C perature Storage Tstg –30°C to 100°C Internal Circuit Soldering temperature Tsol 260°C K C (see note 3) Unless otherwise specified, the tolerances are as shown below. Note: 1. Refer to the temperature rating chart if the ambient temper- ature exceeds 25°C. A E Dimensions Tolerance 2. The pulse width is 10 μs maximum with a frequency of 100 Hz. 3 mm max. ±0.3 Terminal No. Name 3. Complete soldering within 10 seconds. 3 < mm ≤ 6 ±0.375 A Anode 6 < mm ≤ 10 ±0.45 K Cathode 10 < mm ≤ 18 ±0.55 C Collector E Emitter 18 < mm ≤ 30 ±0.65 ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 30 mA F F Reverse current I 0.01 μA typ., 10 μA max. V = 4 V R R Peak emission wavelength λ 940 nm typ. I = 20 mA P F Detector Light current I 0.5 mA min., 14 mA max. I = 20 mA, V = 10 V L F CE Dark current I 2 nA typ., 200 nA max. V = 10 V, 0 lx D CE Leakage current I --- --- LEAK Collector–Emitter saturated volt- V (sat) 0.1 V typ., 0.4 V max. I = 20 mA, I = 0.1 mA CE F L age Peak spectral sensitivity wave- λ 850 nm typ. V = 10 V P CE length Rising time tr 4 μs typ. V = 5 V, R = 100 Ω, I = 5 mA CC L L Falling time tf 4 μs typ. V = 5 V, R = 100 Ω, I = 5 mA CC L L 42 EE-SX1055 Photomicrosensor (Transmissive) ■ Engineering Data Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) Ta = 25°C V = 10 V CE IF Ta = −30°C PC Ta = 25°C Ta = 70°C Forward current I (mA) Ambient temperature Ta (°C) F Forward voltage V (V) F Light Current vs. Collector−Emitter Relative Light Current vs. Ambi- Dark Current vs. Ambient Voltage Characteristics (Typical) ent Temperature Characteristics Temperature Characteristics (Typical) (Typical) Ta = 25°C I = 20 mA V = 10 V F CE V = 5 V 0 lx CE I = 50 mA F I = 40 mA F I = 30 mA F I = 20 mA F I = 10 mA F Collector−Emitter voltage V (V) CE Ambient temperature Ta (°C) Ambient temperature Ta (°C) Sensing Position Characteristics Response Time vs. Load Resist- Sensing Position Characteristics (Typical) ance Characteristics (Typical) (Typical) 120 V = 5 V CC I = 20 mA F Ta = 25°C I = 20 mA V = 10 V F CE VCE = 10 V Ta = 25°C 100 Ta = 25°C (Center of optical axis) 80 d 60 40 20 0 −2.0 −1.5 −1.0 −0.5 0 0.5 1.0 1.5 2.0 Distance d (mm) Load resistance R (kΩ) L Distance d (mm) Response Time Measurement Circuit Input 90 % Output 10 % Input Output EE-SX1055 Photomicrosensor (Transmissive) 43 Response time tr, tf (μs) Light current I (mA) L Forward current I (mA) F Collector dissipation P (mW) C Forward current I (mA) F Relative light current I (%) L Relative light current I (%) L Relative light current I (%) L Dark current I (nA) D Light current I (mA) L (Center of optical axis) Photomicrosensor (Transmissive) EE-SX1057 Be sure to read Precautions on page 25. ■ Dimensions ■ Features Compact model with a 3.6-mm-wide slot. Note: All units are in millimeters unless otherwise indicated. PCB mounting type. ■ Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rated value Emitter Forward current I 50 mA F (see note 1) Pulse forward cur- I 1 A FP rent (see note 2) Reverse voltage V 4 V R Detector Collector–Emitter V 30 V CEO voltage Emitter–Collector V 5 V ECO voltage Collector current I 20 mA C Collector dissipa- P 100 mW C tion (see note 1) Ambient tem- Operating Topr –25°C to 85°C perature Storage Tstg –30°C to 100°C Soldering temperature Tsol 260°C Internal Circuit (see note 3) K C Unless otherwise specified, the Note: 1. Refer to the temperature rating chart if the ambient temper- ature exceeds 25°C. tolerances are as shown below. 2. The pulse width is 10 μs maximum with a frequency of A E 100 Hz. Dimensions Tolerance 3. Complete soldering within 10 seconds. 3 mm max. ±0.2 Terminal No. Name 3 < mm ≤ 6 ±0.24 A Anode 6 < mm ≤ 10 ±0.29 K Cathode 10 < mm ≤ 18 ±0.35 C Collector E Emitter 18 < mm ≤ 30 ±0.42 ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition Emitter Forward voltage V 1.15 V typ., 1.5 V max. I = 30 mA F F Reverse current I 0.01 μA typ., 10 μA max. V = 4 V R R Peak emission wavelength λ 940 nm typ. I = 20 mA P F Detector Light current I 1.5 mA min., 8 mA typ., 30 mA max. I = 15 mA, V = 2 V L F CE Dark current I 2 nA typ., 200 nA max. V = 10 V, 0 lx D CE Leakage current I --- --- LEAK Collector–Emitter saturated V (sat) 0.4 V max. I = 30 mA, I = 1 mA CE F L voltage Peak spectral sensitivity wave- λ 850 nm typ. V = 10 V P CE length Rising time tr 4 μs typ., 20 μA max. V = 10 V, R = 100 Ω, I = 5 mA CC L L Falling time tf 4 μs typ., 20 μA max. V = 10 V, R = 100 Ω, I = 5 mA CC L L 44 EE-SX1057 Photomicrosensor (Transmissive) ■ Engineering Data Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) Ta = 25°C V = 10 V IF CE Ta = −30°C PC Ta = 25°C Ta = 70°C Ambient temperature Ta (°C) Forward current I (mA) F Forward voltage V (V) F Light Current vs. Collector−Emitter Dark Current vs. Ambient Relative Light Current vs. Ambi- Voltage Characteristics (Typical) Temperature Characteristics ent Temperature Characteristics (Typical) (Typical) Ta = 25°C V = 10 V I = 20 mA CE F 0 lx V = 5 V CE I = 50 mA F I = 40 mA F I = 30 mA F I = 20 mA F I = 10 mA F Collector−Emitter voltage V (V) CE Ambient temperature Ta (°C) Ambient temperature Ta (°C) Sensing Position Characteristics Sensing Position Characteristics Response Time vs. Load Resist- (Typical) (Typical) ance Characteristics (Typical) 120 V = 5 V CC I = 20 mA F I = 20 mA Ta = 25°C F V = 10 V CE V = 10 V CE Ta = 25°C 100 Ta = 25°C (Center of optical axis) 80 d 60 40 20 0 −2.0 −1.5 −1.0 −0.5 0 0.5 1.0 1.5 2.0 Distance d (mm) Load resistance R (kΩ) L Distance d (mm) Response Time Measurement Circuit Input 90 % Output 10 % Input Output EE-SX1057 Photomicrosensor (Transmissive) 45 Response time tr, tf (μs) Light current I (mA) L Forward current I (mA) F Collector dissipation P (mW) C Relative light current I (%) Relative light current I (%) L L Forward current I (mA) F Relative light current I (%) L Dark current I (nA) D Light current I (mA) L (Center of optical axis) Photomicrosensor (Transmissive) EE-SX1070 Be sure to read Precautions on page 25. ■ Dimensions ■ Features Wide model with a 8-mm-wide slot. Note: All units are in millimeters unless otherwise indicated. PCB mounting type. 17.7 High resolution with a 0.5-mm-wide aperture. 6±0.2 ■ Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rated value 0.5±0.1 +0.2 8 −0.1 Two, C1 Emitter Forward current I 50 mA F (see note 1) Optical 2.2 axis Pulse forward cur- I 1 A 0 FP 10 −0.2 7.5±0.2 rent (see note 2) 2.5 Reverse voltage V 4 V R Detector Collector–Emitter V 30 V 6.2 CEO Two, 0.7±0.1 voltage Emitter–Collector V --- Four, 0.5 Four, 0.25 ECO (13.8) (2.5) voltage 2.35±0.1 (2.5) 5.2±0.1 Collector current I 20 mA C K C Collector dissipa- P 100 mW C tion (see note 1) A E Ambient tem- Operating Topr –25°C to 95°C Two, 0.7±0.1 dia. perature 6.6±0.1 Storage Tstg –30°C to 100°C Internal Circuit Soldering temperature Tsol 260°C K C Unless otherwise specified, the (see note 3) tolerances are as shown below. Note: 1. Refer to the temperature rating chart if the ambient temper- ature exceeds 25°C. A E Dimensions Tolerance 2. The pulse width is 10 μs maximum with a frequency of 3 mm max. ±0.3 100 Hz. Terminal No. Name 3. Complete soldering within 10 seconds. 3 < mm ≤ 6 ±0.375 A Anode 6 < mm ≤ 10 ±0.45 K Cathode 10 < mm ≤ 18 ±0.55 C Collector E Emitter 18 < mm ≤ 30 ±0.65 ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 30 mA F F Reverse current I 0.01 μA typ., 10 μA max. V = 4 V R R Peak emission wavelength λ 940 nm typ. I = 20 mA P F Detector Light current I 0.5 mA min., 14 mA max. I = 20 mA, V = 10 V L F CE Dark current I 2 nA typ., 200 nA max. V = 10 V, 0 lx D CE Leakage current I --- --- LEAK Collector–Emitter saturated volt- V (sat) 0.1 V typ., 0.4 V max. I = 20 mA, I = 0.1 mA CE F L age Peak spectral sensitivity wave- λ 850 nm typ. V = 10 V P CE length Rising time tr 4 μs typ. V = 5 V, R = 100 Ω, I = 5 mA CC L L Falling time tf 4 μs typ. V = 5 V, R = 100 Ω, I = 5 mA CC L L 46 EE-SX1070 Photomicrosensor (Transmissive) JAPAN ■ Engineering Data Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) 150 60 Ta = 25°C V = 10 V IF CE 50 Ta = −30°C PC 100 40 Ta = 25°C Ta = 70°C 30 50 20 10 0 0 −40 −20 0 20 40 60 80 100 Ambient temperature Ta (°C) Forward current I (mA) Forward voltage V (V) F F Relative Light Current vs. Ambi- Light Current vs. Collector−Emitter Dark Current vs. Ambient ent Temperature Characteristics Voltage Characteristics (Typical) Temperature Characteristics (Typical) (Typical) Ta = 25°C I = 20 mA V = 10 V F CE V = 5 V 0 lx CE I = 50 mA F I = 40 mA F I = 30 mA F I = 20 mA F I = 10 mA F Collector−Emitter voltage V (V) Ambient temperature Ta (°C) CE Ambient temperature Ta (°C) Response Time vs. Load Resist- Sensing Position Characteristics Sensing Position Characteristics ance Characteristics (Typical) (Typical) (Typical) 120 V = 5 V CC I = 20 mA F I = 20 mA F Ta = 25°C V = 10 V CE V = 10 V CE Ta = 25°C 100 Ta = 25°C (Center of optical axis) 80 d 60 40 20 0 −2.0 −1.5 −1.0 −0.5 0 0.5 1.0 1.5 2.0 Distance d (mm) Load resistance R (kΩ) L Distance d (mm) Response Time Measurement Circuit Input 90 % Output 10 % Input Output EE-SX1070 Photomicrosensor (Transmissive) 47 Response time tr, tf (μs) Forward current I (mA) F Light current I (mA) L Collector dissipation P (mW) C Relative light current I (%) L Forward current I (mA) F Relative light current I (%) L Dark current I (nA) Relative light current I (%) D L Light current I (mA) L (Center of optical axis) Photomicrosensor (Transmissive) EE-SX1071 Be sure to read Precautions on page 25. ■ Dimensions ■ Features General-purpose model with a 3.4-mm-wide slot. Note: All units are in millimeters unless otherwise indicated. PCB mounting type. High resolution with a 0.5-mm-wide aperture. ■ Absolute Maximum Ratings (Ta = 25°C) 6.2 Item Symbol Rated value Emitter Forward current I 50 mA F Four, C0.3 0.5 (see note 1) 0.2 Pulse forward cur- I 1 A FP 2.1 rent (see note 2) Optical axis Reverse voltage V 4 V R 10.2 7.2 Detector Collector–Emitter V 30 V CEO voltage Emitter–Collector V --- ECO voltage Collector current I 20 mA Four, 0.5 Four, 0.25 Cross section BB C Collector dissipa- P 100 mW C (2.54) tion (see note 1) Cross section AA Ambient tem- Operating Topr –25°C to 85°C perature Storage Tstg –30°C to Internal Circuit 100°C Soldering temperature Tsol 260°C K C Unless otherwise specified, the (see note 3) tolerances are as shown below. Note: 1. Refer to the temperature rating chart if the ambient temper- A E Dimensions Tolerance ature exceeds 25°C. 2. The pulse width is 10 μs maximum with a frequency of 3 mm max. ±0.3 100 Hz. Terminal No. Name 3 < mm ≤ 6 ±0.375 3. Complete soldering within 10 seconds. A Anode 6 < mm ≤ 10 ±0.45 K Cathode 10 < mm ≤ 18 ±0.55 C Collector 18 < mm ≤ 30 ±0.65 E Emitter ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 30 mA F F Reverse current I 0.01 μA typ., 10 μA max. V = 4 V R R Peak emission wavelength λ 940 nm typ. I = 20 mA P F Detector Light current I 0.5 mA min., 14 mA max. I = 20 mA, V = 10 V L F CE Dark current I 2 nA typ., 200 nA max. V = 10 V, 0 lx D CE Leakage current I --- --- LEAK Collector–Emitter saturated volt- V (sat) 0.1 V typ., 0.4 V max. I = 20 mA, I = 0.1 mA CE F L age Peak spectral sensitivity wave- λ 850 nm typ. V = 10 V P CE length Rising time tr 4 μs typ. V = 5 V, R = 100 Ω, I = 5 mA CC L L Falling time tf 4 μs typ. V = 5 V, R = 100 Ω, I = 5 mA CC L L 48 EE-SX1071 Photomicrosensor (Transmissive) ■ Engineering Data Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) Ta = 25°C IF V = 10 V CE Ta = −30°C PC Ta = 25°C Ta = 70°C Forward current I (mA) Ambient temperature Ta (°C) Forward voltage V (V) F F Relative Light Current vs. Ambi- Light Current vs. Collector−Emitter Dark Current vs. Ambient ent Temperature Characteristics Voltage Characteristics (Typical) Temperature Characteristics (Typical) (Typical) I = 20 mA F V = 10 V CE Ta = 25°C V = 5 V CE 0 lx I = 50 mA F I = 40 mA F I = 30 mA F I = 20 mA F I = 10 mA F Collector−Emitter voltage V (V) Ambient temperature Ta (°C) CE Ambient temperature Ta (°C) Sensing Position Characteristics Response Time vs. Load Resist- Sensing Position Characteristics (Typical) ance Characteristics (Typical) (Typical) 120 I = 20 mA V = 5 V F CC I = 20 mA F V = 10 V Ta = 25°C CE VCE = 10 V Ta = 25°C 100 Ta = 25°C (Center of optical axis) 80 d 60 40 20 0 −2.0 −1.5 −1.0 −0.5 0 0.5 1.0 1.5 2.0 Distance d (mm) Load resistance R (kΩ) L Distance d (mm) Response Time Measurement Circuit Input 90 % Output 10 % Input Output EE-SX1071 Photomicrosensor (Transmissive) 49 Response time tr, tf (μs) Light current I (mA) L Forward current I (mA) F Collector dissipation P (mW) C Relative light current I (%) Relative light current I (%) L L Forward current I (mA) F Dark current I (nA) D Relative light current I (%) L Light current I (mA) L (Center of optical axis) Photomicrosensor (Transmissive) EE-SX1081 Be sure to read Precautions on page 25. ■ Dimensions ■ Features General-purpose model with a 5-mm-wide slot. Note: All units are in millimeters unless otherwise indicated. PCB mounting type. High resolution with a 0.5-mm-wide aperture. ■ Absolute Maximum Ratings (Ta = 25°C) Four, C0.3 13.7±0.3 Item Symbol Rated value 5+0.1 Emitter Forward current I 50 mA F Two, C1±0.3 (see note 1) 0.5±0.1 2.5±0.2 Pulse forward cur- I 1 A FP rent (see note 2) (Optical axis) 7.5±0.2 10±0.2 Reverse voltage V 4 V 8.5±0.1 R 6.5±0.1 Detector Collector–Emitter V 30 V CEO voltage 6.2±0.5 Four, Emitter–Collector V --- ECO Four, 0.25±0.1 0.5±0.1 voltage (10.5) Collector current I 20 mA C Collector dissipa- P 100 mW Cross section BB Cross section AA C tion (see note 1) Ambient tem- Operating Topr –25°C to 85°C Internal Circuit perature Storage Tstg –30°C to 100°C Soldering temperature Tsol 260°C K C Unless otherwise specified, the (see note 3) tolerances are as shown below. Note: 1. Refer to the temperature rating chart if the ambient temper- A E Dimensions Tolerance ature exceeds 25°C. 3 mm max. ±0.3 2. The pulse width is 10 μs maximum with a frequency of Terminal No. Name 100 Hz. 3 < mm ≤ 6 ±0.375 3. Complete soldering within 10 seconds. A Anode 6 < mm ≤ 10 ±0.45 K Cathode 10 < mm ≤ 18 ±0.55 C Collector E Emitter 18 < mm ≤ 30 ±0.65 ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 30 mA F F Reverse current I 0.01 μA typ., 10 μA max. V = 4 V R R Peak emission wavelength λ 940 nm typ. I = 20 mA P F Detector Light current I 0.5 mA min., 14 mA max. I = 20 mA, V = 10 V L F CE Dark current I 2 nA typ., 200 nA max. V = 10 V, 0 lx D CE Leakage current I --- --- LEAK Collector–Emitter saturated volt- V (sat) 0.1 V typ., 0.4 V max. I = 20 mA, I = 0.1 mA CE F L age Peak spectral sensitivity wave- λ 850 nm typ. V = 10 V P CE length Rising time tr 4 μs typ. V = 5 V, R = 100 Ω, I = 5 mA CC L L Falling time tf 4 μs typ. V = 5 V, R = 100 Ω, I = 5 mA CC L L 50 EE-SX1081 Photomicrosensor (Transmissive) ■ Engineering Data Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) Ta = 25°C IF V = 10 V CE Ta = −30°C PC Ta = 25°C Ta = 70°C Forward current I (mA) Ambient temperature Ta (°C) Forward voltage V (V) F F Relative Light Current vs. Ambi- Light Current vs. Collector−Emitter Dark Current vs. Ambient ent Temperature Characteristics Voltage Characteristics (Typical) Temperature Characteristics (Typical) (Typical) I = 20 mA F V = 10 V Ta = 25°C CE V = 5 V CE 0 lx I = 50 mA F I = 40 mA F I = 30 mA F I = 20 mA F I = 10 mA F Collector−Emitter voltage V (V) CE Ambient temperature Ta (°C) Ambient temperature Ta (°C) Sensing Position Characteristics Response Time vs. Load Resist- Sensing Position Characteristics (Typical) (Typical) ance Characteristics (Typical) 120 V = 5 V CC I = 20 mA F I = 20 mA F Ta = 25°C V = 10 V CE VCE = 10 V Ta = 25°C 100 Ta = 25°C (Center of optical axis) 80 d 60 40 20 0 −2.0 −1.5 −1.0 −0.5 0 0.5 1.0 1.5 2.0 Distance d (mm) Load resistance R (kΩ) L Distance d (mm) Response Time Measurement Circuit Input 90 % Output 10 % Input Output EE-SX1081 Photomicrosensor (Transmissive) 51 Light current I (mA) Response time tr, tf (μs) L Forward current I (mA) F Collector dissipation P (mW) C Relative light current I (%) L Relative light current I (%) L Forward current I (mA) F Dark current I (nA) D Relative light current I (%) L Light current I (mA) L (Center of optical axis) Photomicrosensor (Transmissive) EE-SX1088 Be sure to read Precautions on page 25. ■ Dimensions ■ Features General-purpose model with a 3.4-mm-wide slot. Note: All units are in millimeters unless otherwise indicated. Mounts to PCBs or connects to connectors. 25±0.2 High resolution with a 0.5-mm-wide aperture. 19±0.15 Two, R1 OMRON’s XK8-series Connectors can be connected without sol- dering. Contact your OMRON representative for information on 5±0.2 6±0.2 obtaining XK8-series Connectors. Two, C2 Four, C0.3 Two, 3.2±0.2 dia. holes ■ Absolute Maximum Ratings (Ta = 25°C) 0.5±0.1 Item Symbol Rated value 0.5±0.1 Emitter Forward current I 50 mA F 6.5±0.1 (Optical axis) (see note 1) 10±0.2 Pulse forward cur- I 1 A FP 8.4±0.1 7.2±0.2 rent (see note 2) 2.5±0.1 Four, 0.5 Reverse voltage V 4 V R 3±0.4 Four, 0.25 Detector Collector–Emitter V 30 V CEO voltage Cross section BB Cross section AA Emitter–Collector V --- ECO voltage Collector current I 20 mA C Collector dissipa- P 100 mW C Internal Circuit tion (see note 1) Ambient tem- Operating Topr –25°C to 85°C K C Unless otherwise specified, the perature Storage Tstg –30°C to tolerances are as shown below. 100°C Soldering temperature Tsol 260°C A E Dimensions Tolerance (see note 3) 3 mm max. ±0.3 Note: 1. Refer to the temperature rating chart if the ambient temper- Terminal No. Name 3 < mm ≤ 6 ±0.375 ature exceeds 25°C. A Anode 6 < mm ≤ 10 ±0.45 2. The pulse width is 10 μs maximum with a frequency of K Cathode 100 Hz. 10 < mm ≤ 18 ±0.55 C Collector 3. Complete soldering within 10 seconds. 18 < mm ≤ 30 ±0.65 E Emitter ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 30 mA F F Reverse current I 0.01 μA typ., 10 μA max. V = 4 V R R Peak emission wavelength λ 940 nm typ. I = 20 mA P F Detector Light current I 0.5 mA min., 14 mA max. I = 20 mA, V = 10 V L F CE Dark current I 2 nA typ., 200 nA max. V = 10 V, 0 lx D CE Leakage current I --- --- LEAK Collector–Emitter saturated volt- V (sat) 0.15 V typ., 0.4 V max. I = 20 mA, I = 0.1 mA CE F L age Peak spectral sensitivity wave- λ 850 nm typ. V = 10 V P CE length Rising time tr 4 μs typ. V = 5 V, R = 100 Ω, I = 5 mA CC L L Falling time tf 4 μs typ. V = 5 V, R = 100 Ω, I = 5 mA CC L L 52 EE-SX1088 Photomicrosensor (Transmissive) ■ Engineering Data Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) Ta = 25°C IF V = 10 V CE Ta = −30°C PC Ta = 25°C Ta = 70°C Forward voltage V (V) F Forward current I (mA) Ambient temperature Ta (°C) F Light Current vs. Collector−Emitter Relative Light Current vs. Ambi- Dark Current vs. Ambient Voltage Characteristics (Typical) ent Temperature Characteristics Temperature Characteristics (Typical) (Typical) I = 20 mA F Ta = 25°C V = 10 V CE V = 5 V CE 0 lx I = 50 mA F I = 40 mA F I = 30 mA F I = 20 mA F I = 10 mA F Collector−Emitter voltage V (V) CE Ambient temperature Ta (°C) Ambient temperature Ta (°C) Response Time vs. Load Resist- Sensing Position Characteristics Sensing Position Characteristics ance Characteristics (Typical) (Typical) (Typical) 120 V = 5 V CC I = 20 mA F IF = 20 mA Ta = 25°C V = 10 V CE V = 10 V CE 100 Ta = 25°C Ta = 25°C (Center of optical axis) 80 d 60 40 20 0 −2.0 −1.5 −1.0 −0.5 0 0.5 1.0 1.5 2.0 Distance d (mm) Load resistance R (kΩ) L Distance d (mm) Response Time Measurement Circuit Input 90 % Output 10 % Input Output EE-SX1088 Photomicrosensor (Transmissive) 53 Response time tr, tf (μs) Forward current I (mA) F Light current I (mA) L Collector dissipation P (mW) C Forward current I (mA) F Relative light current I (%) Relative light current I (%) L L Dark current I (nA) D Relative light current I (%) L Light current I (mA) L (Center of optical axis) Photomicrosensor (Transmissive) EE-SX1096 Be sure to read Precautions on page 25. ■ Dimensions ■ Features General-purpose model with a 3.4-mm-wide slot. Note: All units are in millimeters unless otherwise indicated. Mounts to PCBs or connects to connectors. 25±0.2 High resolution with a 0.5-mm-wide aperture. Two, R1 19±0.15 With a horizontal sensing slot. OMRON’s XK8-series Connectors can be connected without sol- 5±0.2 6±0.2 dering. Contact your OMRON representative for information on obtaining XK8-series Connectors. Two, 3.2±0.2 dia. holes Four, C0.3 Two, C2 ■ Absolute Maximum Ratings (Ta = 25°C) 2.1±0.15 2.1±0.15 Item Symbol Rated value 0.5±0.1 0.5±0.1 (Optical axis) Emitter Forward current I 50 mA F (see note 1) 10±0.2 7.2±0.2 3±0.4 Pulse forward cur- I 1 A FP 2.5±0.1 rent (see note 2) Four, 0.5 Four, 0.25 Reverse voltage V 4 V R Detector Collector–Emitter V 30 V CEO Cross section AA voltage Cross section BB Emitter–Collector V --- ECO voltage Collector current I 20 mA C Internal Circuit Collector dissipa- P 100 mW C K C Unless otherwise specified, the tion (see note 1) tolerances are as shown below. Ambient tem- Operating Topr –25°C to 85°C perature Storage Tstg –30°C to 100°C A E Dimensions Tolerance Soldering temperature Tsol 260°C 3 mm max. ±0.3 (see note 3) Terminal No. Name 3 < mm ≤ 6 ±0.375 Note: 1. Refer to the temperature rating chart if the ambient temper- A Anode 6 < mm ≤ 10 ±0.45 ature exceeds 25°C. K Cathode 2. The pulse width is 10 μs maximum with a frequency of 10 < mm ≤ 18 ±0.55 C Collector 100 Hz. E Emitter 18 < mm ≤ 30 ±0.65 3. Complete soldering within 10 seconds. ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 30 mA F F Reverse current I 0.01 μA typ., 10 μA max. V = 4 V R R Peak emission wavelength λ 940 nm typ. I = 20 mA P F Detector Light current I 0.5 mA min., 14 mA max. I = 20 mA, V = 10 V L F CE Dark current I 2 nA typ., 200 nA max. V = 10 V, 0 lx D CE Leakage current I --- --- LEAK Collector–Emitter saturated volt- V (sat) 0.1 V typ., 0.4 V max. I = 20 mA, I = 0.1 mA CE F L age Peak spectral sensitivity wave- λ 850 nm typ. V = 10 V P CE length Rising time tr 4 μs typ. V = 5 V, R = 100 Ω, I = 5 mA CC L L Falling time tf 4 μs typ. V = 5 V, R = 100 Ω, I = 5 mA CC L L 54 EE-SX1096 Photomicrosensor (Transmissive) ■ Engineering Data Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) Ta = 25°C V = 10 V IF CE Ta = −30°C PC Ta = 25°C Ta = 70°C Forward current I (mA) Ambient temperature Ta (°C) F Forward voltage V (V) F Light Current vs. Collector−Emitter Relative Light Current vs. Ambi- Dark Current vs. Ambient Voltage Characteristics (Typical) ent Temperature Characteristics Temperature Characteristics (Typical) (Typical) Ta = 25°C I = 20 mA V = 10 V F CE V = 5 V 0 lx CE I = 50 mA F I = 40 mA F I = 30 mA F I = 20 mA F I = 10 mA F Collector−Emitter voltage V (V) CE Ambient temperature Ta (°C) Ambient temperature Ta (°C) Response Time vs. Load Resist- Sensing Position Characteristics Sensing Position Characteristics ance Characteristics (Typical) (Typical) (Typical) 120 120 V = 5 V CC I = 20 mA F Ta = 25°C I = 20 mA F V = 10 V CE V = 10 V CE Ta = 25°C 100 100 Ta = 25°C (Center of optical axis) 80 80 d d 60 60 40 40 20 20 0 0 −0.5 −0.25 0 0.25 0.5 0.75 1.0 −2.0 −1.5 −1.0 −0.5 0 0.5 1.0 1.5 2.0 Distance d (mm) Load resistance R (kΩ) Distance d (mm) L Response Time Measurement Circuit Input 90 % Output 10 % Input Output EE-SX1096 Photomicrosensor (Transmissive) 55 Response time tr, tf (μs) Light current I (mA) L Forward current I (mA) F Collector dissipation P (mW) C Relative light current I (%) Relative light current I (%) L L Forward current I (mA) F (Center of optical axis) Dark current I (nA) D Relative light current I (%) L Light current I (mA) L Photomicrosensor (Transmissive) EE-SX1103 Be sure to read Precautions on page 25. ■ Dimensions ■ Features Ultra-compact with a sensor width of 5 mm and a slot width of Note: All units are in millimeters unless otherwise indicated. 2 mm. PCB mounting type. High resolution with a 0.4-mm-wide aperture. ■ Absolute Maximum Ratings (Ta = 25°C) Two, C0.5 Item Symbol Rated value Gate Optical Emitter Forward current I 50 mA F axis (see note 1) Pulse forward cur- I --- FP rent Two, C0.3 Reverse voltage V 5 V R dia. 5 min. Detector Collector–Emitter V 30 V CEO voltage Emitter–Collector V 4.5 V ECO Four, 0.5 Four, 0.2 voltage Collector current I 30 mA C Collector dissipa- P 80 mW C Internal Circuit tion (see note 1) Ambient tem- Operating Topr –25°C to 85°C perature Storage Tstg –30°C to 100°C Soldering temperature Tsol 260°C (see note 2) Note: 1. Refer to the temperature rating chart if the ambient temper- Terminal No. Name ature exceeds 25°C. A Anode 2. Complete soldering within 3 seconds. Unless otherwise specified, the K Cathode tolerances are ±0.2 mm. C Collector E Emitter ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition Emitter Forward voltage V 1.3 V typ., 1.6 V max. I = 50 mA F F Reverse current I 10 μA max. V = 5 V R R Peak emission wavelength λ 950 nm typ. I = 50 mA P F Detector Light current I 0.5 mA min. I = 20 mA, V = 5 V L F CE Dark current I 500 nA max. V = 10 V, 0 lx D CE Leakage current I --- --- LEAK Collector–Emitter saturated volt- V (sat) 0.4 V max. I = 20 mA, I = 0.3 mA CE F L age Peak spectral sensitivity wave- λ 800 nm typ. V = 5 V P CE length Rising time tr 10 μs typ. V = 5 V, R = 100 Ω, CC L I = 20 mA F Falling time tf 10 μs typ. V = 5 V, R = 100 Ω, CC L I = 20 mA F 56 EE-SX1103 Photomicrosensor (Transmissive) ■ Engineering Data Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) Ta = 25°C V = 5 V CE Forward current I (mA) F Ambient temperature Ta (°C) Forward voltage V (V) F Relative Light Current vs. Ambi- Light Current vs. Collector−Emitter Dark Current vs. Ambient Voltage Characteristics (Typical) ent Temperature Characteristics Temperature Characteristics (Typical) (Typical) Ta = 25°C I = 20 mA F V = 5 V CE I = 50 mA F V = 30 V CE V = 20 V CE I = 40 mA F V = 10 V CE I = 30 mA F I = 20 mA F I = 10 mA F Collector−Emitter voltage V (V) CE Ambient temperature Ta (°C) Ambient temperature Ta (°C) Response Time vs. Light Current Sensing Position Characteristics Sensing Position Characteristics Characteristics (Typical) (Typical) (Typical) V = 5 V CC I = 20 mA F I = 20 mA F Ta = 25°C V = 5 V CE V = 5 V CE Ta = 25°C Ta = 25°C Light current I (mA) Distance d (mm) Distance d (mm) t Response Time Measurement Circuit Input 90 % Output 10 % Input Output EE-SX1103 Photomicrosensor (Transmissive) 57 Forward current I (mA) F Light current I (mA) L Response time tr, tf (μs) Collector dissipation P (mW) C Relative light current I (%) L Forward current I (mA) F Relative light current I (%) L Light current I (mA) L Dark current I (nA) Relative light current I (%) D L Photomicrosensor (Transmissive) EE-SX1105 Be sure to read Precautions on page 25. ■ Dimensions ■ Features • Ultra-compact with a sensor width of 4.9 mm and a slot width of Note: All units are in millimeters unless otherwise indicated. 2 mm. • Low-height of 3.3 mm. • PCB mounting type. • High resolution with a 0.4-mm-wide aperture. Two, C0.7 ■ Absolute Maximum Ratings (Ta = 25°C) Gate Optical Item Symbol Rated value axis Emitter Forward current I 50 mA F (see note 1) Four, 0.5 Four, 0.4 Two, R0.15 Pulse forward I --- 5 min. FP Two, R0.3 current Four, Reverse voltage V 5 V R Detector Collector–Emitter V 30 V CEO voltage Cross section AA Emitter–Collector V 4.5 V ECO voltage Collector current I 30 mA C Internal Circuit Collector P 80 mW C dissipation (see note 1) Ambient tem- Operating Topr –25°C to 85°C perature Storage Tstg –30°C to 85°C Soldering temperature Tsol 260°C (see note 2) Terminal No. Name A Anode Note: 1. Refer to the temperature rating chart if the ambient tem- perature exceeds 25°C. K Cathode 2. Complete soldering within 3 seconds. Unless otherwise specified, C Collector the tolerances are ±0.2 mm. E Emitter ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition Emitter Forward voltage V 1.3 V typ., 1.6 V max. I = 50 mA F F Reverse current I 10 μA max. V = 5 V R R Peak emission wavelength λ 950 nm typ. I = 50 mA P F Detector Light current I 0.2 mA min. I = 20 mA, V = 5 V L F CE Dark current I 500 nA max. V = 10 V, 0 lx D CE Leakage current I --- --- LEAK Collector–Emitter saturated volt- V (sat) 0.4 V max. I = 20 mA, I = 0.1 mA CE F L age Peak spectral sensitivity wave- λ 800 nm typ. V = 5 V P CE length Rising time tr 10 μs typ. V = 5 V, R = 100 Ω, CC L I = 20 mA F Falling time tf 10 μs typ. V = 5 V, R = 100 Ω, CC L I = 20 mA F 58 EE-SX1105 Photomicrosensor (Transmissive) ■ Engineering Data Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) 2.5 Ta = 25°C V = 5 V CE 2 1.5 1 0.5 Ambient temperature Ta (°C) Forward voltage V (V) Forward current I (mA) F F Light Current vs. Collector−Emitter Relative Light Current vs. Ambi- Dark Current vs. Ambient Voltage Characteristics (Typical) Temperature Characteristics ent Temperature Characteristics (Typical) (Typical) 160 Ta = 25°C I = 20 mA F 140 V = 30 V V = 5 V CE CE V = 20 V CE 120 I = 50 mA F V = 10 V CE 100 I = 40 mA F 80 I = 30 mA F 60 I = 20 mA F 40 I = 10 mA F 20 0 −40 −20 0 20 40 60 80 100 Collector−Emitter voltage V (V) Ambient temperature Ta (°C) Ambient temperature Ta (°C) CE Response Time vs. Light Current Sensing Position Characteristics Sensing Position Characteristics Characteristics (Typical) (Typical) (Typical) Ta = 25°C I = 20 mA F I = 20 mA F V = 5 V V = 5 V CE CE V = 5 V CE Ta = 25°C Ta = 25°C RL = 1K Ω RL = 500 Ω RL = 100 Ω Light current l (mA) Distance d (mm) Distance d (mm) t Response Time Measurement Circuit Input 90 % Output 10 % Input Output EE-SX1105 Photomicrosensor (Transmissive) 59 Response time tr, tf (μs) Light current I (mA) Forward current I (mA) L F Collector dissipation Pc (mW) Relative light current I (%) L Forward current I (mA) F Relative light current I (%) L Dark current I (nA) Light current I (mA) D L Relative light current I (%) L Photomicrosensor (Transmissive) EE-SX1106 Be sure to read Precautions on page 25. ■ Dimensions ■ Features Ultra-compact with a slot width of 3 mm. Note: All units are in millimeters unless otherwise indicated. PCB mounting type. High resolution with a 0.4-mm-wide aperture. ■ Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rated value Two, C0.7 Emitter Forward current I 50 mA F Gate (see note 1) Optical axis Pulse forward cur- I --- FP 5.4 rent Reverse voltage V 5 V R Detector Collector–Emitter V 30 V CEO 5 min. voltage Two, R1 Emitter–Collector V 4.5 V ECO Four, 0.2 Two, C0.2 voltage Collector current I 30 mA C Four, 0.5 Collector dissipa- P 80 mW C tion (see note 1) Ambient tem- Operating Topr –25°C to 85°C Internal Circuit 0 perature 1 dia −0.1 Storage Tstg –30°C to 85°C Soldering temperature Tsol 260°C 0 1.4 dia −0.1 (see note 2) Note: 1. Refer to the temperature rating chart if the ambient temper- ature exceeds 25°C. 2. Complete soldering within 3 seconds. Terminal No. Name A Anode Unless otherwise specified, K Cathode the tolerances are ±0.2 mm. C Collector E Emitter ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition Emitter Forward voltage V 1.3 V typ., 1.6 V max. I = 50 mA F F Reverse current I 10 μA max. V = 5 V R R Peak emission wavelength λ 950 nm typ. I = 50 mA P F Detector Light current I 0.2 mA min. I = 20 mA, V = 5 V L F CE Dark current I 500 nA max. V = 10 V, 0 lx D CE Leakage current I --- --- LEAK Collector–Emitter saturated volt- V (sat) 0.4 V max. I = 20 mA, I = 0.1 mA CE F L age Peak spectral sensitivity wave- λ 800 nm typ. V = 5 V P CE length Rising time tr 10 μs typ. V = 5 V, R = 100 Ω, CC L I = 20 mA F Falling time tf 10 μs typ. V = 5 V, R = 100 Ω, CC L I = 20 mA F 60 EE-SX1106 Photomicrosensor (Transmissive) ■ Engineering Data Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) Ta = 25°C V = 5 V CE Ambient temperature Ta (°C) Forward current I (mA) Forward voltage V (V) F F Relative Light Current vs. Ambi- Light Current vs. Collector−Emitter Dark Current vs. Ambient Voltage Characteristics (Typical) ent Temperature Characteristics Temperature Characteristics (Typical) (Typical) Ta = 25°C I = 20 mA I = 25 mA F F V = 5 V CE V = 30 V CE V =20 V CE I = 20 mA F V = 10 V CE I = 15 mA F I = 10 mA F I = 5 mA F Ambient temperature Ta (°C) Collector−Emitter voltage V (V) CE Ambient temperature Ta (°C) Response Time vs. Light Current Sensing Position Characteristics Sensing Position Characteristics Characteristics (Typical) (Typical) (Typical) V = 5 V CE I = 20 mA I = 20 mA F F Ta = 25°C V = 5 V V = 5 V CE CE Ta = 25°C Ta = 25°C RL = 1K Ω RL = 500 Ω RL = 100 Ω Light current I (mA) t Distance d (mm) Distance d (mm) Response Time Measurement Circuit Input 90 % Output 10 % Input Output EE-SX1106 Photomicrosensor (Transmissive) 61 Response time tr, tf (μs) Light current I (mA) Forward current I (mA) L F Collector dissipation P (mW) C Relative light current I (%) L Relative light current I (%) L Forward current I (mA) F Dark current I (nA) D Light current I (mA) L Relative light current I (%) L Photomicrosensor (Transmissive) EE-SX1107 Be sure to read Precautions on page 25. ■ Dimensions ■ Features Ultra-compact with a 3.4-mm-wide sensor and a 1-mm-wide slot. Note: All units are in millimeters unless otherwise indicated. PCB surface mounting type. High resolution with a 0.15-mm-wide aperture. ■ Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rated value Emitter Forward current I 25 mA F (see note 1) Pulse forward cur- I 100 mA FP rent (see note 2) Reverse voltage V 5 V R Optical axis Detector Collector–Emitter V 20 V CEO voltage Emitter–Collector V 5 V ECO Cross section AA voltage Collector current I 20 mA Recommended Soldering C Pattern Internal Circuit Collector dissipa- P 75 mW C tion (see note 1) Ambient tem- Operating Topr –30°C to 85°C perature Storage Tstg –40°C to 90°C Reflow soldering Tsol 255°C (see note 3) Terminal No. Name Manual soldering Tsol 350°C A Anode (see note 3) Unless otherwise specified, the K Cathode tolerances are ±0.15 mm. Note: 1. Refer to the temperature rating chart if the ambient temper- C Collector ature exceeds 25°C. E Emitter 2. Duty: 1/100; Pulse width: 0.1 ms 3. Complete soldering within 10 seconds for reflow soldering and within 3 seconds for manual soldering. ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition Emitter Forward voltage V 1.1 V typ., 1.3 V max. I = 5 mA F F Reverse current I 10 μA max. V = 5 V R R Peak emission wavelength λ 940 nm typ. I = 20 mA P F Detector Light current I 50 μA min., 150 μA typ., I = 5 mA, V = 5 V L F CE 500 μA max. Dark current I 100 nA max. V = 10 V, 0 lx D CE Leakage current I --- --- LEAK Collector–Emitter saturated voltage V (sat) 0.1 V typ., 0.4 V max. I = 20 mA, I = 50 μA CE F L Peak spectral sensitivity wavelength λ 900 nm typ. --- P Rising time tr 10 μs typ. V = 5 V, R = 1 kΩ, CC L I = 100 μA L Falling time tf 10 μs typ. V = 5 V, R = 1 kΩ, CC L I = 100 μA L 62 EE-SX1107 Photomicrosensor (Transmissive) ■ Engineering Data Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) Ta = 25°C V = 5 V CE Forward current I (mA) F Forward voltage V (V) F Ambient temperature Ta (°C) Light Current vs. Collector−Emitter Relative Light Current vs. Ambient Dark Current vs. Ambient Tem- Voltage Characteristics (Typical) Temperature Characteristics (Typical) perature Characteristics (Typical) Ta = 25°C I = 5 mA F V = 5 V CE V = 10 V CE I = 10 mA F V =2 V CE I = 5 mA F Collector−Emitter voltage V (V) CE Ambient temperature Ta (°C) Ambient temperature Ta (°C) Response Time vs. Load Resistance Sensing Position Characteristics Sensing Position Character- Characteristics (Typical) (Typical) istics (Typical) V = 5 V I = 5 mA CC I = 5 mA F F Ta = 25°C V = 5 V V = 5 V CE CE Load resistance R (kΩ) L Distance d (mm) Distance d (mm) Response Time Measurement Circuit Input 90 % Output 10 % Input Output EE-SX1107 Photomicrosensor (Transmissive) 63 Response time tr, tf (μs) Light current I (mA) Forward current I (mA) L F Collector dissipation P (mW) C Relative light current I (%) L Forward current I (mA) F Relative light current I (%) L Relative light current I (%) L Light current I (mA) L Dark current I (nA) D Unit: mm (inch) ■ Tape and Reel Reel 21±0.8 dia. 330±2 dia. 2±0.5 13± 0.5 dia. 80±1 dia. Product name Quantity Lot number +2 12.4 0 18.4 max. Tape 1.5 dia. Tape configuration Terminating part Leading part Parts mounted (40 mm min.) (400 mm min.) Empty (40 mm min.) Pull-out direction Tape quantity 2,500 pcs./reel 64 EE-SX1107 Photomicrosensor (Transmissive) Precautions ■ Soldering Information Reflow soldering The following soldering paste is recommended: Melting temperature: 216 to 220°C Composition: Sn 3.5 Ag 0.75 Cu The recommended thickness of the metal mask for screen printing is between 0.2 and 0.25 mm. Set the reflow oven so that the temperature profile shown in the following chart is obtained for the upper surface of the product being soldered. 260°C max. 255°C max. 1 to 5°C/s 230°C max. 150 to 180°C 1 to 5°C/s 10 sec max. 120 sec 40 sec max. Time Manual soldering Use ”Sn 60” (60% tin and 40% lead) or solder with silver content. Use a soldering iron of less than 25 W, and keep the temperature of the iron tip at 350°C or below. Solder each point for a maximum of three seconds. After soldering, allow the product to return to room temperature before handling it. Storage To protect the product from the effects of humidity until the package is opened, dry-box storage is recommended. If this is not possible, store the product under the following conditions: Temperature: 10 to 30°C Humidity: 60% max. The product is packed in a humidity-proof envelope. Reflow soldering must be done within 48 hours after opening the envelope, during which time the product must be stored under 30°C at 80% maximum humidity. If it is necessary to store the product after opening the envelope, use dry-box storage or reseal the envelope. Baking If a product has remained packed in a humidity-proof envelope for six months or more, or if more than 48 hours have lapsed since the envelope was opened, bake the product under the following conditions before use: Reel: 60°C for 24 hours or more Bulk: 80°C for 4 hours or more EE-SX1107 Photomicrosensor (Transmissive) 65 Temperature Photomicrosensor (Transmissive) EE-SX1108 Be sure to read Precautions on page 25. ■ Dimensions ■ Features Ultra-compact with a 5-mm-wide sensor and a 1-mm-wide slot. Note: All units are in millimeters unless otherwise indicated. PCB surface mounting type. High resolution with a 0.3-mm-wide aperture. ■ Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rated value Emitter Forward current I 25 mA F (see note 1) Pulse forward cur- I 100 mA FP rent (see note 2) Reverse voltage V 5 V R Optical Detector Collector–Emitter V 20 V axis CEO voltage Emitter–Collector V 5 V ECO voltage Cross section AA Collector current I 20 mA C Collector dissipa- P 75 mW Recommended C Internal Circuit Soldering Pattern tion (see note 1) Ambient tem- Operating Topr –30°C to 85°C perature Storage Tstg –40°C to 90°C Reflow soldering Tsol 255°C (see note 3) Terminal No. Name Manual soldering Tsol 350°C (see note 3) A Anode K Cathode Unless otherwise specified, the Note: 1. Refer to the temperature rating chart if the ambient temper- C Collector ature exceeds 25°C. tolerances are ±0.15 mm. E Emitter 2. Duty: 1/100; Pulse width: 0.1 ms 3. Complete soldering within 10 seconds for reflow soldering and within 3 seconds for manual soldering. ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition Emitter Forward voltage V 1.1 V typ., 1.3 V max. I = 5 mA F F Reverse current I 10 μA max. V = 5 V R R Peak emission wavelength λ 940 nm typ. I = 20 mA P F Detector Light current I 50 μA min., 150 μA typ., I = 5 mA, V = 5 V L F CE 500 μA max. Dark current I 100 nA max. V = 10 V, 0 lx D CE Leakage current I --- --- LEAK Collector–Emitter saturated voltage V (sat) 0.1 V typ., 0.4 V max. I = 20 mA, I = 50 μA CE F L Peak spectral sensitivity wavelength λ 900 nm typ. --- P Rising time tr 10 μs typ. V = 5 V, R = 1 kΩ, CC L I = 100 μA L Falling time tf 10 μs typ. V = 5 V, R = 1 kΩ, CC L I = 100 μA L 66 EE-SX1108 Photomicrosensor (Transmissive) ■ Engineering Data Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) Ta = 25°C V = 5 V CE Forward current I (mA) Ambient temperature Ta (°C) Forward voltage V (V) F F Light Current vs. Collector−Emitter Dark Current vs. Ambient Tem- Relative Light Current vs. Ambient Voltage Characteristics (Typical) perature Characteristics (Typical) Temperature Characteristics (Typical) Ta = 25°C I = 5 mA F V = 5 V CE I = 10 mA F V = 10 V CE V = 2 V CE I = 5 mA F Collector−Emitter voltage V (V) CE Ambient temperature Ta (°C) Ambient temperature Ta (°C) Response Time vs. Load Resist- Sensing Position Characteristics Sensing Position Characteristics ance Characteristics (Typical) (Typical) (Typical) V = 5 V CC I = 5 mA I = 5 mA F F Ta = 25°C V = 5 V V = 5 V CE CE Load resistance R (kΩ) L Distance d (mm) Distance d (mm) Response Time Measurement Circuit Input 90 % Output 10 % Input Output EE-SX1108 Photomicrosensor (Transmissive) 67 Light current I (mA) Forward current I (mA) L F Response time tr, tf (μs) Collector dissipation P (mW) C Forward current I (mA) Relative light current I (%) Relative light current I (%) F L L Light current I (mA) L Relative light current I (%) Dark current I (nA) L D Unit: mm (inch) ■ Tape and Reel Reel 21±0.8 dia. 330±2 dia. 2±0.5 13± 0.5 dia. 80±1 dia. Product name Quantity Lot number +2 12.4 0 18.4 max. Tape 1.5 dia. Tape configuration Leading part Terminating part Parts mounted (400 mm min.) (40 mm min.) Empty (40 mm min.) Pull-out direction Tape quantity 2,000 pcs./reel 68 EE-SX1108 Photomicrosensor (Transmissive) Precautions ■ Soldering Information Reflow soldering The following soldering paste is recommended: Melting temperature: 216 to 220°C Composition: Sn 3.5 Ag 0.75 Cu The recommended thickness of the metal mask for screen printing is between 0.2 and 0.25 mm. Set the reflow oven so that the temperature profile shown in the following chart is obtained for the upper surface of the product being soldered. 260°C max. 255°C max. 1 to 5°C/s 230°C max. 150 to 180°C 1 to 5°C/s 10 sec max. 120 sec 40 sec max. Time Manual soldering Use ”Sn 60” (60% tin and 40% lead) or solder with silver content. Use a soldering iron of less than 25 W, and keep the temperature of the iron tip at 300°C or below. Solder each point for a maximum of three seconds. After soldering, allow the product to return to room temperature before handling it. Storage To protect the product from the effects of humidity until the package is opened, dry-box storage is recommended. If this is not possible, store the product under the following conditions: Temperature: 10 to 30°C Humidity: 60% max. The product is packed in a humidity-proof envelope. Reflow soldering must be done within 48 hours after opening the envelope, during which time the product must be stored under 30°C at 80% maximum humidity. If it is necessary to store the product after opening the envelope, use dry-box storage or reseal the envelope. Baking If a product has remained packed in a humidity-proof envelope for six months or more, or if more than 48 hours have lapsed since the envelope was opened, bake the product under the following conditions before use: Reel: 60°C for 24 hours or more Bulk: 80°C for 4 hours or more EE-SX1108 Photomicrosensor (Transmissive) 69 Temperature Photomicrosensor (Transmissive) EE-SX1109 Be sure to read Precautions on page 25. ■ Dimensions ■ Features Ultra-compact with a 6-mm-wide sensor and a 3-mm-wide slot. Note: All units are in millimeters unless otherwise indicated. PCB surface mounting type. High resolution with a 0.5-mm-wide aperture. ■ Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rated value Emitter Forward current I 25 mA F (see note 1) Pulse forward cur- I 100 mA FP rent (see note 2) Optical axis Reverse voltage V 5 V R Detector Collector–Emitter V 20 V CEO voltage Emitter–Collector V 5 V ECO voltage Cross section AA Collector current I 20 mA C Recommended Internal Circuit Soldering Pattern Collector dissipa- P 75 mW C tion (see note 1) Ambient tem- Operating Topr –30°C to 85°C perature Storage Tstg –40°C to 90°C Reflow soldering Tsol 255°C (see note 3) Manual soldering Tsol 350°C Terminal No. Name (see note 3) A Anode Note: 1. Refer to the temperature rating chart if the ambient temper- K Cathode ature exceeds 25°C. Unless otherwise specified, the C Collector 2. Duty: 1/100; Pulse width: 0.1 ms tolerances are ±0.15 mm. E Emitter 3. Complete soldering within 10 seconds for reflow soldering and within 3 seconds for manual soldering. ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition Emitter Forward voltage V 1.1 V typ., 1.3 V max. I = 5 mA F F Reverse current I 10 μA max. V = 5 V R R Peak emission wavelength λ 940 nm typ. I = 20 mA P F Detector Light current I 50 μA min., 150 μA typ., I = 5 mA, V = 5 V L F CE 500 μA max. Dark current I 100 nA max. V = 10 V, 0 lx D CE Leakage current I --- --- LEAK Collector–Emitter saturated volt- V (sat) 0.1 V typ., 0.4 V max. I = 20 mA, I = 50 μA CE F L age Peak spectral sensitivity wave- λ 900 nm typ. --- P length Rising time tr 10 μs typ. V = 5 V, R = 1 kΩ, CC L I = 100 μA L Falling time tf 10 μs typ. V = 5 V, R = 1 kΩ, CC L I = 100 μA L 70 EE-SX1109 Photomicrosensor (Transmissive) ■ Engineering Data Forward Current vs. Collector Dis- Forward Current vs. Forward Light Current vs. Forward Current sipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) Ta = 25°C V = 5 V CE Ambient temperature Ta (°C) Forward current I (mA) F Forward voltage V (V) F Light Current vs. Collector−Emitter Relative Light Current vs. Ambient Dark Current vs. Ambient Temper- Voltage Characteristics (Typical) Temperature Characteristics (Typical) ature Characteristics (Typical) Ta = 25°C I = 5 mA F V = 5 V CE V = 10 V CE I = 10 mA F V = 2 V CE I = 5 mA F Collector−Emitter voltage V (V) CE Ambient temperature Ta (°C) Ambient temperature Ta (°C) Response Time vs. Load Resist- Sensing Position Characteris- Sensing Position Characteris- ance Characteristics (Typical) tics (Typical) tics (Typical) V = 5 V CC I = 5 mA F Ta = 25°C I = 5 mA F V = 5 V CE V = 5 V CE Load resistance R (kΩ) L Distance d (mm) Distance d (mm) Response Time Measurement Circuit Input 90 % Output 10 % Input Output EE-SX1109 Photomicrosensor (Transmissive) 71 Forward current I (mA) F Light current I (mA) L Response time tr, tf (μs) Collector dissipation P (mW) C Forward current I (mA) F Relative light current I (%) L Relative light current I (%) L Light current I (mA) L Dark current I (nA) D Relative light current I (%) L Unit: mm (inch) ■ Tape and Reel Reel 21±0.8 dia. 2±0.5 330+2 dia. 13± 0.5 dia. 80±1 dia. Product name Quantity Lot No. +2 12.4 0 18.4 max. Tape 1.5 dia. Tape configuration Terminating part Parts mounted Leading part (400 mm min.) (40 mm min.) Empty (40 mm min.) Pull-out direction Tape quantity 1,000 pcs./reel 72 EE-SX1109 Photomicrosensor (Transmissive) Precautions ■ Soldering Information Reflow soldering The following soldering paste is recommended: Melting temperature: 216 to 220°C Composition: Sn 3.5 Ag 0.75 Cu The recommended thickness of the metal mask for screen printing is between 0.2 and 0.25 mm. Set the reflow oven so that the temperature profile shown in the following chart is obtained for the upper surface of the product being soldered. 260°C max. 255°C max. 1 to 5°C/s 230°C max. 150 to 180°C 1 to 5°C/s 10 sec max. 120 sec 40 sec max. Time Manual soldering Use ”Sn 60” (60% tin and 40% lead) or solder with silver content. Use a soldering iron of less than 25 W, and keep the temperature of the iron tip at 300°C or below. Solder each point for a maximum of three seconds. After soldering, allow the product to return to room temperature before handling it. Storage To protect the product from the effects of humidity until the package is opened, dry-box storage is recommended. If this is not possible, store the product under the following conditions: Temperature: 10 to 30°C Humidity: 60% max. The product is packed in a humidity-proof envelope. Reflow soldering must be done within 48 hours after opening the envelope, during which time the product must be stored under 30°C at 80% maximum humidity. If it is necessary to store the product after opening the envelope, use dry-box storage or reseal the envelope. Baking If a product has remained packed in a humidity-proof envelope for six months or more, or if more than 48 hours have lapsed since the envelope was opened, bake the product under the following conditions before use: Reel: 60°C for 24 hours or more Bulk: 80°C for 4 hours or more EE-SX1109 Photomicrosensor (Transmissive) 73 Temperature Photomicrosensor (Transmissive) EE-SX1115 Be sure to read Precautions on page 25. ■ Dimensions ■ Features 14.5-mm-tall model with a deep slot. Note: All units are in millimeters unless otherwise indicated. PCB mounting type. Four, C0.3 High resolution with a 0.5-mm-wide aperture. 1.03 Four, R0.1 5 ■ Absolute Maximum Ratings (Ta = 25°C) +0.06 +0.06 1.35 1.35 −0.01 −0.01 Item Symbol Rated value 14 0.2 Part B 5 0.5±0.05 Emitter Forward current I 50 mA F A (see note 1) Four, R0.1 Optical axis 1.03 Pulse forward cur- I 1 A FP +0.06 rent (see note 2) 1.35 −0.01 Reverse voltage V 4 V 14.5 R 12±0.4 +0.06 1.35 −0.01 Detector Collector–Emitter V 30 V CEO Part C voltage 2.5 Emitter–Collector V --- ECO 2-2 voltage 5 min. A Four, 0.25 Collector current I 20 mA C Collector dissipa- P 100 mW (11.2) Four, 0.5 C (1.94) tion (see note 1) K C Cross section AA Ambient tem- Operating Topr –25°C to 85°C perature Storage Tstg –30°C to A E 100°C B (2.1) C 4.2±0.1 Soldering temperature Tsol 260°C Internal Circuit (see note 3) K C Unless otherwise specified, the Note: 1. Refer to the temperature rating chart if the ambient temper- tolerances are as shown below. ature exceeds 25°C. 2. The pulse width is 10 μs maximum with a frequency of A E Dimensions Tolerance 100 Hz. 3. Complete soldering within 10 seconds. 3 mm max. ±0.3 Terminal No. Name 3 < mm ≤ 6 ±0.375 A Anode 6 < mm ≤ 10 ±0.45 K Cathode 10 < mm ≤ 18 ±0.55 C Collector E Emitter 18 < mm ≤ 30 ±0.65 ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 30 mA F F Reverse current I 0.01 μA typ., 10 μA max. V = 4 V R R Peak emission wavelength λ 940 nm typ. I = 20 mA P F Detector Light current I 0.5 mA min., 14 mA max. I = 20 mA, V = 10 V L F CE Dark current I 2 nA typ., 200 nA max. V = 10 V, 0 lx D CE Leakage current I --- --- LEAK Collector–Emitter saturated volt- V (sat) 0.1 V typ., 0.4 V max. I = 20 mA, I = 0.1 mA CE F L age Peak spectral sensitivity wave- λ 850 nm typ. V = 10 V P CE length Rising time tr 4 μs typ. V = 5 V, R = 100 Ω, I = 5 mA CC L L Falling time tf 4 μs typ. V = 5 V, R = 100 Ω, I = 5 mA CC L L 74 EE-SX1115 Photomicrosensor (Transmissive) ■ Engineering Data Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) Ta = 25°C IF V = 10 V CE Ta = −30°C PC Ta = 25°C Ta = 70°C Forward current I (mA) F Ambient temperature Ta (°C) Forward voltage V (V) F Relative Light Current vs. Ambi- Light Current vs. Collector−Emitter Dark Current vs. Ambient ent Temperature Characteristics Voltage Characteristics (Typical) Temperature Characteristics (Typical) (Typical) Ta = 25°C V = 10 V I = 20 mA CE F 0 lx V = 5 V CE I = 50 mA F I = 40 mA F I = 30 mA F I = 20 mA F I = 10 mA F Collector−Emitter voltage V (V) Ambient temperature Ta (°C) CE Ambient temperature Ta (°C) Sensing Position Characteristics Response Time vs. Load Resist- Sensing Position Characteristics (Typical) ance Characteristics (Typical) (Typical) 120 V = 5 V CC I = 20 mA F I = 20 mA Ta = 25°C F V = 10 V CE V = 10 V CE Ta = 25°C 100 Ta = 25°C (Center of optical axis) 80 d 60 40 20 0 −2.0 −1.5 −1.0 −0.5 0 0.5 1.0 1.5 2.0 Load resistance R (kΩ) Distance d (mm) L Distance d (mm) Response Time Measurement Circuit Input 90 % Output 10 % Input Output EE-SX1115 Photomicrosensor (Transmissive) 75 Response time tr, tf (μs) Forward current I (mA) F Light current I (mA) L Collector dissipation P (mW) C Relative light current I (%) Relative light current I (%) L L Forward current I (mA) F Dark current I (nA) D Relative light current I (%) L Light current I (mA) L (Center of optical axis) Photomicrosensor (Transmissive) EE-SX1128 Be sure to read Precautions on page 25. ■ Dimensions ■ Features General-purpose model with a 4.2-mm-wide slot. Note: All units are in millimeters unless otherwise indicated. PCB mounting type. High resolution with a 0.5-mm-wide aperture. Horizontal sensing aperture. ■ Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rated value Emitter Forward current I 50 mA F (see note 1) Pulse forward cur- I 1 A FP rent (see note 2) Reverse voltage V 4 V R Detector Collector–Emitter V 30 V CEO voltage Emitter–Collector V --- ECO voltage Collector current I 20 mA C Collector dissipa- P 100 mW C tion (see note 1) Ambient tem- Operating Topr –25°C to 85°C perature Storage Tstg –30°C to Internal Circuit 100°C K C Soldering temperature Tsol 260°C Unless otherwise specified, the (see note 3) tolerances are as shown below. Note: 1. Refer to the temperature rating chart if the ambient temper- A E Dimensions Tolerance ature exceeds 25°C. 0 < × ≤ 4 ±0.100 2. The pulse width is 10 μs maximum with a frequency of Terminal No. Name 100 Hz. 4 < × ≤ 18 ±0.200 3. Complete soldering within 10 seconds. A Anode K Cathode C Collector E Emitter ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 30 mA F F Reverse current I 0.01 μA typ., 10 μA max. V = 4 V R R Peak emission wavelength λ 940 nm typ. I = 20 mA P F Detector Light current I 0.5 mA min., 10 mA max. I = 20 mA, V = 10 V L F CE Dark current I 2 nA typ., 200 nA max. V = 10 V, 0 lx D CE Leakage current I --- --- LEAK Collector–Emitter saturated volt- V (sat) 0.1 V typ., 0.4 V max. I = 20 mA, I = 0.1 mA CE F L age Peak spectral sensitivity wave- λ 850 nm typ. V = 10 V P CE length Rising time tr 4 μs typ. V = 5 V, R = 100 Ω, I = 5 mA CC L L Falling time tf 4 μs typ. V = 5 V, R = 100 Ω, I = 5 mA CC L L 76 EE-SX1128 Photomicrosensor (Transmissive) ■ Engineering Data Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) 20 Ta = 25°C 18 V = 10 V CE 16 Ta = −30°C 14 Ta = 25°C Ta = 70°C 12 10 8 6 4 2 Ambient temperature Ta (°C) Forward current I (mA) F Forward voltage V (V) F Light Current vs. Collector−Emitter Dark Current vs. Ambient Relative Light Current vs. Ambi- Voltage Characteristics (Typical) Temperature Characteristics ent Temperature Characteristics (Typical) (Typical) 20 Ta = 25°C V = 10 V I = 20 mA CE F 18 0 lx V = 5 V CE 16 I = 50 mA F 14 I = 40 mA 12 F 10 I = 30 mA F 8 I = 20 mA F 6 4 I = 10 mA F 2 Ambient temperature Ta (°C) Collector−Emitter voltage V (V) Ambient temperature Ta (°C) CE Sensing Position Characteristics Response Time vs. Load Resist- Sensing Position Characteristics (Typical) ance Characteristics (Typical) (Typical) 120 120 I = 20 mA V = 5 V F CC I = 20 mA F V = 10 V Ta = 25°C CE V = 10 V CE Ta = 25°C 100 100 Ta = 25°C d 80 80 d 60 60 40 40 20 20 0 0 −0.5 −0.25 0 0.25 0.5 0.75 1.0 −2.0 −1.5 −1.0 −0.5 0 0.5 1.0 1.5 2.0 Distance d (mm) Distance d (mm) Load resistance R (kΩ) L Response Time Measurement Circuit Input 90 % Output 10 % Input Output EE-SX1128 Photomicrosensor (Transmissive) 77 Light current I (mA) L Response time tr, tf (μs) Forward current I (mA) F Collector dissipation P (mW) C Relative light current I (%) Relative light current I (%) L L Forward current I (mA) F (Center of optical axis) Dark current I (nA) Relative light current I (%) D L Light current I (mA) L (Center of optical axis) Photomicrosensor (Transmissive) EE-SX1131 Be sure to read Precautions on page 25. ■ Dimensions ■ Features Ultra-compact with a 5-mm-wide sensor and a 2-mm-wide slot. Note: All units are in millimeters unless otherwise indicated. PCB surface mounting type. High resolution with a 0.3-mm-wide aperture. Dual-channel output. ■ Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rated value Emitter Forward current I 25 mA F (see note 1) Pulse forward cur- I 100 mA FP rent (see note 2) Optical axis Reverse voltage V 5 V R Detector Collector–Emitter V 20 V CEO voltage Cross section AA Emitter–Collector V 5 V ECO Recommended Soldering Pattern Internal Circuit voltage Collector current I 20 mA C Collector dissipa- P 75 mW C tion (see note 1) Ambient tem- Operating Topr –30°C to 85°C perature Storage Tstg –40°C to 90°C Terminal No. Name Reflow soldering Tsol 255°C A Anode (see note 3) NC Not connected. Manual soldering Tsol 350°C (see note 3) K Cathode Unless otherwise specified, the C Collector tolerances are ±0.15 mm. Note: 1. Refer to the temperature rating chart if the ambient temper- E1 Emitter 1 ature exceeds 25°C. E2 Emitter 2 2. Duty: 1/100; Pulse width: 0.1 ms 3. Complete soldering within 10 seconds for reflow soldering and within 3 seconds for manual soldering. ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition Emitter Forward voltage V 1.1 V typ., 1.3 V max. I = 5 mA F F Reverse current I 10 μA max. V = 5 V R R Peak emission wavelength λ 940 nm typ. I = 20 mA P F Detector Light current I /I 50 μA min., 150 μA typ., I = 5 mA, V = 5 V L1 L2 F CE 500 μA max. Dark current I 100 nA max. V = 10 V, 0 lx D CE Leakage current I --- --- LEAK Collector–Emitter saturated voltage V (sat) 0.1 V typ., 0.4 V max. I = 20 mA, I = 50 μA CE F L Peak spectral sensitivity wavelength λ 900 nm typ. --- P Rising time tr 10 μs typ. V = 5 V, R = 1 kΩ, CC L I = 100 μA L Falling time tf 10 μs typ. V = 5 V, R = 1 kΩ, CC L I = 100 μA L 78 EE-SX1131 Photomicrosensor (Transmissive) ■ Engineering Data Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) Ta = 25°C Ta = 25°C V = 5 V CE Forward current I (mA) F Ambient temperature Ta (°C) Forward voltage V (V) F Dark Current vs. Ambient Tem- Light Current vs. Collector−Emitter Relative Light Current vs. Ambient Voltage Characteristics (Typical) Temperature Characteristics (Typical) perature Characteristics (Typical) Ta = 25°C I = 5 mA F V = 5 V CE I = 10 mA V = 10 V F CE V = 2 V CE I = 5 mA F Collector−Emitter voltage V (V) CE Ambient temperature Ta (°C) Ambient temperature Ta (°C) Response Time vs. Load Resistance Sensing Position Characteristics Sensing Position Characteristics Characteristics (Typical) (Typical) (Typical) V = 5 V CC I = 5 mA I = 5 mA F F Ta = 25°C V = 5 V V = 5 V CE CE Load resistance R (kΩ) Distance d (mm) L Distance d (mm) Response Time Measurement Circuit Input 90 % Output 10 % Input Output EE-SX1131 Photomicrosensor (Transmissive) 79 Forward current I (mA) Response time tr, tf (μs) F Light current I (mA) L Collector dissipation P (mW) C Relative light current I (%) L Relative light current I (%) L Forward current I (mA) F Dark current I (nA) D Relative light current I (%) L Light current I (mA) L Unit: mm (inch) ■ Tape and Reel Reel 21±0.8 dia. 2±0.5 330±2 dia. 13± 0.5 dia. 80±1 dia. Product name Quantity Lot number +2 12.4 0 18.4 max. Tape 1.5 dia. Tape configuration Terminating part Parts mounted Leading part (40 mm min.) (400 mm min.) Empty (40 mm min.) Pull-out direction Tape quantity 2,000 pcs./reel 80 EE-SX1131 Photomicrosensor (Transmissive) Precautions ■ Soldering Information Reflow soldering The following soldering paste is recommended: Melting temperature: 216 to 220°C Composition: Sn 3.5 Ag 0.75 Cu The recommended thickness of the metal mask for screen printing is between 0.2 and 0.25 mm. Set the reflow oven so that the temperature profile shown in the following chart is obtained for the upper surface of the product being soldered. 260°C max. 255°C max. 1 to 5°C/s 230°C max. 150 to 180°C 1 to 5°C/s 10 sec max. 120 sec 40 sec max. Time Manual soldering Use ”Sn 60” (60% tin and 40% lead) or solder with silver content. Use a soldering iron of less than 25 W, and keep the temperature of the iron tip at 300°C or below. Solder each point for a maximum of three seconds. After soldering, allow the product to return to room temperature before handling it. Storage To protect the product from the effects of humidity until the package is opened, dry-box storage is recommended. If this is not possible, store the product under the following conditions: Temperature: 10 to 30°C Humidity: 60% max. The product is packed in a humidity-proof envelope. Reflow soldering must be done within 48 hours after opening the envelope, during which time the product must be stored under 30°C at 80% maximum humidity. If it is necessary to store the product after opening the envelope, use dry-box storage or reseal the envelope. Baking If a product has remained packed in a humidity-proof envelope for six months or more, or if more than 48 hours have lapsed since the envelope was opened, bake the product under the following conditions before use: Reel: 60°C for 24 hours or more Bulk: 80°C for 4 hours or more EE-SX1131 Photomicrosensor (Transmissive) 81 Temperature Photomicrosensor (Transmissive) EE-SX1137 Be sure to read Precautions on page 25. ■ Dimensions ■ Features General-purpose model with a 5-mm-wide slot. Note: All units are in millimeters unless otherwise indicated. PCB mounting type. High resolution with a 0.5-mm-wide aperture. ■ Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rated value Emitter Forward current I 50 mA F (see note 1) Pulse forward cur- I 1 A FP rent (see note 2) Reverse voltage V 4 V R Detector Collector–Emitter V 30 V CEO voltage Emitter–Collector V --- ECO voltage Collector current I 20 mA C Collector dissipa- P 100 mW C tion (see note 1) Ambient tem- Operating Topr –25°C to 85°C perature Storage Tstg –30°C to 100°C Internal Circuit Soldering temperature Tsol 260°C K C Unless otherwise specified, the (see note 3) tolerances are as shown below. Note: 1. Refer to the temperature rating chart if the ambient temper- ature exceeds 25°C. A E Dimensions Tolerance 2. The pulse width is 10 μs maximum with a frequency of 3 mm max. ±0.3 100 Hz. Terminal No. Name 3. Complete soldering within 10 seconds. 3 < mm ≤ 6 ±0.375 A Anode 6 < mm ≤ 10 ±0.45 K Cathode 10 < mm ≤ 18 ±0.55 C Collector E Emitter 18 < mm ≤ 30 ±0.65 ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 30 mA F F Reverse current I 0.01 μA typ., 10 μA max. V = 4 V R R Peak emission wavelength λ 940 nm typ. I = 20 mA P F Detector Light current I 0.5 mA min., 14 mA max. I = 20 mA, V = 10 V L F CE Dark current I 2 nA typ., 200 nA max. V = 10 V, 0 lx D CE Leakage current I --- --- LEAK Collector–Emitter saturated volt- V (sat) 0.1 V typ., 0.4 V max. I = 20 mA, I = 0.1 mA CE F L age Peak spectral sensitivity wave- λ 850 nm typ. V = 10 V P CE length Rising time tr 4 μs typ. V = 5 V, R = 100 Ω, I = 5 mA CC L L Falling time tf 4 μs typ. V = 5 V, R = 100 Ω, I = 5 mA CC L L 82 EE-SX1137 Photomicrosensor (Transmissive) ■ Engineering Data Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) Ta = 25°C V = 10 V CE Ta = −30°C Ta = 25°C Ta = 70°C Ambient temperature Ta (°C) Forward current I (mA) F Forward voltage V (V) F Relative Light Current vs. Ambi- Light Current vs. Collector−Emitter Dark Current vs. Ambient ent Temperature Characteristics Voltage Characteristics (Typical) Temperature Characteristics (Typical) (Typical) Ta = 25°C I = 20 mA V = 10 V F CE V = 5 V 0 lx CE I = 50 mA F I = 40 mA F I = 30 mA F I = 20 mA F I = 10 mA F Ambient temperature Ta (°C) Collector−Emitter voltage V (V) Ambient temperature Ta (°C) CE Sensing Position Characteristics Response Time vs. Load Resist- Sensing Position Characteristics (Typical) ance Characteristics (Typical) (Typical) 120 I = 20 mA I = 20 mA F V = 5 V F CC V = 10 V V = 10 V CE Ta = 25°C CE Ta = 25°C 100 Ta = 25°C (Center of optical axis) 80 d 60 40 20 0 −2.0 −1.5 −1.0 −0.5 0 0.5 1.0 1.5 2.0 Distance d (mm) Load resistance R (kΩ) L Distance d (mm) Response Time Measurement Circuit Input 90 % Output 10 % Input Output EE-SX1137 Photomicrosensor (Transmissive) 83 Forward current I (mA) Response time tr, tf (μs) Light current I (mA) F L Collector dissipation P (mW) C Relative light current I (%) L Relative light current I (%) L Forward current I (mA) F Dark current I (nA) D Relative light current I (%) L Light current I (mA) L (Center of optical axis) Photomicrosensor (Transmissive) EE-SX1140 Be sure to read Precautions on page 25. ■ Dimensions ■ Features General-purpose model with a 14-mm-wide slot. Note: All units are in millimeters unless otherwise indicated. 16.3-mm-tall model with a deep slot. Four, C0.3 Four, 0.8 3.2±0.1 dia. through-holePCB mounting type. 35 ■ Absolute Maximum Ratings (Ta = 25°C) Four, 0.8 Item Symbol Rated value 14 Emitter Forward current I 50 mA 23 F 1.5 1.5 (see note 1) 0.2 A B Pulse forward cur- I 1 A FP Optical axis rent (see note 2) Reverse voltage V 4 V R 16.3 Detector Collector–Emitter V 30 V CEO (13.5) 12.5±0.15 5.2 voltage Emitter–Collector V --- ECO 2.8 voltage 4.5±0.5 A B Collector current I 20 mA Four, 0.5 K A C E C Collector dissipa- P 100 mW C Four, 0.25 (2.5) (2.5) tion (see note 1) Cross section BB Cross section AA (19.9) Ambient tem- Operating Topr –25°C to 85°C perature Storage Tstg –30°C to Internal Circuit 100°C C K Soldering temperature Tsol 260°C Unless otherwise specified, the (see note 3) tolerances are as shown below. E A Note: 1. Refer to the temperature rating chart if the ambient temper- Dimensions Tolerance ature exceeds 25°C. 2. The pulse width is 10 μs maximum with a frequency of 3 mm max. ±0.3 100 Hz. Terminal No. Name 3 < mm ≤ 6 ±0.375 3. Complete soldering within 10 seconds. A Anode 6 < mm ≤ 10 ±0.45 K Cathode 10 < mm ≤ 18 ±0.55 C Collector 18 < mm ≤ 30 ±0.65 E Emitter ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 30 mA F F Reverse current I 0.01 μA typ., 10 μA max. V = 4 V R R Peak emission wavelength λ 940 nm typ. I = 20 mA P F Detector Light current I 0.4 mA min. I = 20 mA, V = 10 V L F CE Dark current I 2 nA typ., 200 nA max. V = 10 V, 0 lx D CE Leakage current I --- --- LEAK Collector–Emitter saturated volt- V (sat) 0.1 V typ., 0.4 V max. I = 20 mA, I = 0.1 mA CE F L age Peak spectral sensitivity wave- λ 850 nm typ. V = 10 V P CE length Rising time tr 4 μs typ. V = 5 V, R = 100 Ω, I = 5 mA CC L L Falling time tf 4 μs typ. V = 5 V, R = 100 Ω, I = 5 mA CC L L 84 EE-SX1140 Photomicrosensor (Transmissive) ■ Engineering Data Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) 150 60 60 10 Ta = 25°C V = 10 V CE IF 50 50 8 Ta = −30°C PC 40 100 Ta = 25°C 40 6 Ta = 70°C 30 30 4 20 50 20 2 10 10 0 0 0 0 −40 −20 0 20 40 60 80 100 0 10 20 30 40 50 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 Ambient temperature Ta (°C) Forward current I (mA) Forward voltage V (V) F F Relative Light Current vs. Ambi- Dark Current vs. Ambient Light Current vs. Collector−Emitter ent Temperature Characteristics Temperature Characteristics Voltage Characteristics (Typical) (Typical) (Typical) 10 120 10,000 I = 50 mA F Ta = 25°C V = 10 V CE I = 20 mA F 9 0 lx V = 5 V CE 1,000 110 8 I = 40 mA F 7 100 100 I = 30 mA F 6 10 5 90 I = 20 mA F 1 4 80 3 0.1 I = 10 mA F 2 70 0.01 1 0.001 60 0123456789 10 −40 −20 0 20 40 60 80 100 −30 −20 −10 0 10 20 30 40 50 60 70 80 90 Collector−Emitter voltage V (V) CE Ambient temperature Ta (°C) Ambient temperature Ta (°C) Response Time vs. Load Resist- Sensing Position Characteristics Sensing Position Characteristics ance Characteristics (Typical) (Typical) (Typical) 10,000 120 120 I = 20 mA F V = 5 V CC V = 10 V CE IF = 20 mA Ta = 25°C Ta = 25°C V = 10 V CE 100 Ta = 25°C 100 (Center of optical axis) 1,000 d 80 80 tf d 60 100 60 40 40 tr 10 20 20 0 1 0 0.01 0.1 1 10 −1.5 −0.75 0 0.75 1.5 2.25 3 −2.0 −1.5 −1.0 −0.5 0 0.5 1.0 1.5 2.0 Distance d (mm) Distance d (mm) Load resistance R (kΩ) L Response Time Measurement Circuit Input 0 t Output 90% 0 10% t t r t f IL Input VCC Output RL EE-SX1140 Photomicrosensor (Transmissive) 85 Response time tr, tf (μs) Forward current I (mA) Light current I (mA) F L Collector dissipation P (mW) C Relative light current I (%) L Relative light current I (%) Forward current I (mA) L F Dark current I (nA) D Relative light current I (%) Light current I (mA) L L (Center of optical axis) Photomicrosensor (Transmissive) EE-SX1235A-P2 Be sure to read Precautions on page 25. ■ Dimensions ■ Features Snap-in mounting model. Note: All units are in millimeters unless otherwise indicated. Mounts to 1.0-, 1.2- and 1.6-mm-thick PCBs. Four, R0.5 High resolution with a 0.5-mm-wide aperture. Post header 292250-3 (Tyco Electronics AMP) 5-mm-wide slot. (3) A Connects to Tyco Electronics AMP’s CT-series connectors. (2) K, E (1) C ■ Absolute Maximum Ratings (Ta = 25°C) 6 8.5 (11) 0.5 (Aperture width) 5 5 5 Item Symbol Rated value Optical Emitter Forward current I 50 mA F axis (see note) (see A A note) Pulse forward cur- I --- 0.8 FP 7.6 +1 −0.3 rent 0.7 +0.15 6 3 ±0.2 −0.1 Reverse voltage V 4 V +0.1 +0.1 R 5.8 −0.2 3.5 −0.2 +0.1 +0.1 7.3 5.8 −0.2 −0.2 Detector Collector–Emitter V 30 V CEO +0.1 7.3 −0.2 voltage +0.1 (10) 17 −0.15 Emitter–Collector V 5 V ECO Internal Circuit voltage Note: The asterisked dimension is specified by datum A only. Collector current I 20 mA C Unless otherwise specified, the Collector dissipa- P 100 mW C tolerances are as shown below. tion (see note) Ambient tem- Operating Topr –25°C to 95°C Dimensions Tolerance perature Storage Tstg –40°C to 100°C 3 mm max. ±0.3 Terminal No. Name Soldering temperature Tsol --- 3 < mm ≤ 6 ±0.375 A Anode Note: Refer to the temperature rating chart if the ambient tempera- 6 < mm ≤ 10 ±0.45 C Collector ture exceeds 25°C. 10 < mm ≤ 18 ±0.55 K, E Cathode, 18 < mm ≤ 30 ±0.65 Emitter Recommended Mating Connectors: Tyco Electronics AMP 173977-3 (press-fit connector) 175778-3 (crimp connector) 179228-3 (crimp connector) ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 30 mA F F Reverse current I 0.01 μA typ., 10 μA max. V = 4 V R R Peak emission wavelength λ 940 nm typ. I = 30 mA P F Detector Light current I 0.6 mA min., 14 mA max. I = 20 mA, V = 5 V L F CE Dark current I 200 nA max. V = 10 V, 0 lx D CE Leakage current I --- --- LEAK Collector–Emitter saturated volt- V (sat) 0.1 V typ., 0.4 V max. I = 20 mA, I = 0.3 mA CE F L age Peak spectral sensitivity wave- λ 850 nm typ. V = 5 V P CE length Rising time tr 8 μs typ. V = 5 V, R = 100 Ω, I = 1 mA CC L L Falling time tf 8 μs typ. V = 5 V, R = 100 Ω, I = 1 mA CC L L 86 EE-SX1235A-P2 Photomicrosensor (Transmissive) 3.2 (Aperture width) 8.9 3.3 12.6 +0.1 8 1.1 −0.05 7.6 ±0.2 5.6 4 +0.1 1.1 −0.05 +0.1 1.3 −0.05 +0.15 1.7 −0.05 (5.8) (1.2) (4.6) (10.1) ■ Engineering Data Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) Ta = 25°C V = 10 V IF CE Ta = −30°C PC Ta = 25°C Ta = 70°C Ambient temperature Ta (°C) Forward voltage V (V) Forward current I (mA) F F Relative Light Current vs. Ambi- Light Current vs. Collector−Emitter Dark Current vs. Ambient ent Temperature Characteristics Voltage Characteristics (Typical) Temperature Characteristics (Typical) (Typical) Ta = 25°C V = 10 V CE I = 20 mA F 0 lx V = 5 V CE I = 50 mA F I = 40 mA F I = 30 mA F I = 20 mA F I = 10 mA F Collector−Emitter voltage V (V) CE Ambient temperature Ta (°C) Ambient temperature Ta (°C) Sensing Position Characteristics Sensing Position Characteristics Response Time vs. Load Resist- (Typical) (Typical) ance Characteristics (Typical) 120 V = 5 V CC I = 20 mA I = 20 mA F F Ta = 25°C VCE = 10 V V = 10 V CE Ta = 25°C 100 Ta = 25°C (Center of optical axis) 80 d 60 40 20 0 −2.0 −1.5 −1.0 −0.5 0 0.5 1.0 1.5 2.0 Distance d (mm) Load resistance R (kΩ) L Distance d (mm) Response Time Measurement Circuit Input Output 10% 90% Input VCC Output GND Refer to EE-SX4235A-P2 on page 140. EE-SX1235A-P2 Photomicrosensor (Transmissive) 87 Response time tr, tf (μs) Light current I (mA) L Forward current I (mA) F Collector dissipation P (mW) C Relative light current I (%) Relative light current I (%) L L Forward current I (mA) F Dark current I (nA) D Relative light current I (%) Light current I (mA) L L (Center of optical axis) Photomicrosensor (Transmissive) EE-SX129 Be sure to read Precautions on page 25. ■ Dimensions ■ Features High-resolution model with a 0.2-mm-wide sensing aperture. Note: All units are in millimeters unless otherwise indicated. PCB mounting type. 13 +0.5 8 1 0 5 ■ Absolute Maximum Ratings (Ta = 25°C) 6 Item Symbol Rated value 0.5 min. Emitter Forward current I 50 mA F 5 (see note 1) R2.5 2.5 0.2 0.2 3 A B Part B Pulse forward cur- I 1 A FP 2.5 3±0.3 rent (see note 2) 5 2 8 Optical axis Reverse voltage V 4 V R 2 +0.2 2.1 0 dia. holes A Detector Collector–Emitter V 30 V CEO voltage 13.4±2 Emitter–Collector V --- ECO voltage 0.25 Collector current I 20 mA C 0.5 9.2±0.3 0.8 Collector dissipa- P 100 mW C 1.94±0.2 tion (see note 1) Cross section AA Ambient tem- Operating Topr –25°C to 85°C E A C K perature Storage Tstg –40°C to Internal Circuit 100°C Soldering temperature Tsol 260°C E A Unless otherwise specified, the (see note 3) tolerances are as shown below. Note: 1. Refer to the temperature rating chart if the ambient temper- Dimensions Tolerance C K ature exceeds 25°C. 3 mm max. ±0.3 2. The pulse width is 10 μs maximum with a frequency of Terminal No. Name 100 Hz. 3 < mm ≤ 6 ±0.375 3. Complete soldering within 10 seconds. A Anode 6 < mm ≤ 10 ±0.45 K Cathode 10 < mm ≤ 18 ±0.55 C Collector 18 < mm ≤ 30 ±0.65 E Emitter ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 30 mA F F Reverse current I 0.01 μA typ., 10 μA max. V = 4 V R R Peak emission wavelength λ 920 nm typ. I = 20 mA P F Detector Light current I 0.2 mA min. I = 20 mA, V = 10 V L F CE Dark current I 2 nA typ., 200 nA max. V = 10 V, 0 lx D CE Leakage current I --- --- LEAK Collector–Emitter saturated volt- V (sat) --- --- CE age Peak spectral sensitivity wave- λ 850 nm typ. V = 10 V P CE length Rising time tr 4 μs typ. V = 5 V, R = 100 Ω, I = 5 mA CC L L Falling time tf 4 μs typ. V = 5 V, R = 100 Ω, I = 5 mA CC L L 88 EE-SX129 Photomicrosensor (Transmissive) K C A E ■ Engineering Data Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) Ta = 25°C V = 10 V CE IF Ta = −30°C PC Ta = 25°C Ta = 70°C Forward current I (mA) F Forward voltage V (V) Ambient temperature Ta (°C) F Light Current vs. Collector−Emitter Relative Light Current vs. Ambi- Dark Current vs. Ambient Voltage Characteristics (Typical) ent Temperature Characteristics Temperature Characteristics (Typical) (Typical) I = 20 mA Ta = 25°C F V = 10 V CE V = 5 V CE 0 lx I = 50 mA F I = 40 mA F I = 30 mA F I = 20 mA F I = 10 mA F Collector−Emitter voltage V (V) CE Ambient temperature Ta (°C) Ambient temperature Ta (°C) Response Time vs. Load Resist- Sensing Position Characteristics Sensing Position Characteristics ance Characteristics (Typical) (Typical) (Typical) 120 I = 20 mA F V = 5 V CC I = 20 mA V = 10 V F CE Ta = 25°C V = 10 V Ta = 25°C CE Ta = 25°C 100 (Center of optical axis) 80 d 60 40 20 0 −2.0 −1.5 −1.0 −0.5 0 0.5 1.0 1.5 2.0 -0.2 -0.1 0 0.1 0.2 0.3 0.4 Load resistance R (kΩ) Distance d (mm) L Distance d (mm) Response Time Measurement Circuit Input 90 % Output 10 % Input Vcc Output EE-SX129 Photomicrosensor (Transmissive) 89 Response time tr, tf (μs) Light current I (mA) L Forward current I (mA) F Collector dissipation P (mW) C Relative light current I (%) Relative light current I (%) L L Forward current I (mA) F Dark current I (nA) D Relative light current I (%) Light current I (mA) L L (Center of optical axis) Photomicrosensor (Transmissive) EE-SX138 Be sure to read Precautions on page 25. ■ Dimensions ■ Features General-purpose model with a 3.4-mm-wide slot. Note: All units are in millimeters unless otherwise indicated. PCB mounting type. High resolution with a 0.5-mm-wide aperture. Screw-mounting possible. Four, 0.1 taper ■ Absolute Maximum Ratings (Ta = 25°C) 23.8 Item Symbol Rated value Emitter Forward current I 50 mA Part A F (see note 1) 2.1 × 0.5 Aperture 4.75 0.2 Pulse forward cur- I 1 A Four, R1.25 FP rent (see note 2) (Optical axis) Reverse voltage V 4 V R Detector Collector–Emitter V 30 V CEO Four, 1 R voltage Emitter–Collector V --- Four, 0.25 ECO Four, 0.5 voltage 2.54±0.2 7.6±0.3 Collector current I 20 mA 13.6 14.3 C Collector dissipa- P 100 mW C tion (see note 1) Ambient tem- Operating Topr –25°C to 85°C perature Storage Tstg –40°C to 100°C Internal Circuit Soldering temperature Tsol 260°C (see note 3) E A Unless otherwise specified, the Note: 1. Refer to the temperature rating chart if the ambient temper- tolerances are as shown below. ature exceeds 25°C. Dimensions Tolerance 2. The pulse width is 10 μs maximum with a frequency of C K 100 Hz. 3 mm max. ±0.2 3. Complete soldering within 10 seconds. Terminal No. Name 3 < mm ≤ 6 ±0.24 A Anode 6 < mm ≤ 10 ±0.29 K Cathode 10 < mm ≤ 18 ±0.35 C Collector 18 < mm ≤ 30 ±0.42 E Emitter ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 30 mA F F Reverse current I 0.01 μA typ., 10 μA max. V = 4 V R R Peak emission wavelength λ 940 nm typ. I = 20 mA P F Detector Light current I 1.9 mA min., 14 mA max. I = 20 mA, V = 10 V L F CE Dark current I 2 nA typ., 200 nA max. V = 10 V, 0 lx D CE Leakage current I --- --- LEAK Collector–Emitter saturated volt- V (sat) 0.1 V typ., 0.4 V max. I = 20 mA, I = 0.1 mA CE F L age Peak spectral sensitivity wave- λ 850 nm typ. V = 10 V P CE length Rising time tr 4 μs typ. V = 5 V, R = 100 Ω, I = 5 mA CC L L Falling time tf 4 μs typ. V = 5 V, R = 100 Ω, I = 5 mA CC L L 90 EE-SX138 Photomicrosensor (Transmissive) ■ Engineering Data Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) Ta = 25°C V = 10 V CE IF Ta = −30°C PC Ta = 25°C Ta = 70°C Forward current I (mA) F Forward voltage V (V) Ambient temperature Ta (°C) F Light Current vs. Collector−Emitter Relative Light Current vs. Ambi- Dark Current vs. Ambient Voltage Characteristics (Typical) ent Temperature Characteristics Temperature Characteristics (Typical) (Typical) I = 20 mA Ta = 25°C F V = 10 V CE V = 5 V CE 0 lx I = 50 mA F I = 40 mA F I = 30 mA F I = 20 mA F I = 10 mA F Collector−Emitter voltage V (V) CE Ambient temperature Ta (°C) Ambient temperature Ta (°C) Response Time vs. Load Resist- Sensing Position Characteristics Sensing Position Characteristics ance Characteristics (Typical) (Typical) (Typical) 120 V = 5 V I = 20 mA CC F I = 20 mA F Ta = 25°C V = 10 V CE V = 10 V CE Ta = 25°C 100 Ta = 25°C (Center of optical axis) 80 d 60 40 20 0 −2.0 −1.5 −1.0 −0.5 0 0.5 1.0 1.5 2.0 Load resistance R (kΩ) L Distance d (mm) Distance d (mm) Response Time Measurement Circuit Input 90 % Output 10 % Input Vcc Output EE-SX138 Photomicrosensor (Transmissive) 91 Response time tr, tf (μs) Light current I (mA) L Forward current I (mA) F Collector dissipation P (mW) C Relative light current I (%) Relative light current I (%) L L Forward current I (mA) F Dark current I (nA) D Relative light current I (%) Light current I (mA) L L (Center of optical axis) Photomicrosensor (Transmissive) EE-SX153 Be sure to read Precautions on page 25. ■ Dimensions ■ Features General-purpose model with a 3.4-mm-wide slot. Note: All units are in millimeters unless otherwise indicated. PCB mounting type. 13.6 6.4 High resolution with a 0.5-mm-wide aperture. 0.5 With a horizontal sensing aperture. 6.2 2Screw-mounting possible. 0.3 3.4±0.2 ■ Absolute Maximum Ratings (Ta = 25°C) 2.1 0.2 A 3.2 Item Symbol Rated value 3.2±0.2dia. holes 0.5 Emitter Forward current I 50 mA F 10.2 7.2±0.2 (see note 1) 6 3 3 Pulse forward cur- I 1 A FP rent (see note 2) 7.8 Two, R1 Reverse voltage V 4 V 1.2 R 0.6 Detector Collector–Emitter V 30 V CEO A Four, 0.8 voltage Four, 1.5 Four, 0.25 7.6±0.2 Emitter–Collector V --- ECO Two, 2.54 K C voltage Cross section AA K C Collector current I 20 mA C A E Collector dissipa- P 100 mW C A E tion (see note 1) Internal Circuit Ambient tem- Operating Topr –25°C to 85°C perature K C Storage Tstg –40°C to 100°C Unless otherwise specified, the tolerances are as shown below. Soldering temperature Tsol 260°C (see note 3) A E Dimensions Tolerance 3 mm max. ±0.3 Note: 1. Refer to the temperature rating chart if the ambient temper- ature exceeds 25°C. Terminal No. Name 3 < mm ≤ 6 ±0.375 2. The pulse width is 10 μs maximum with a frequency of A Anode 6 < mm ≤ 10 ±0.45 100 Hz. K Cathode 3. Complete soldering within 10 seconds. 10 < mm ≤ 18 ±0.55 C Collector E Emitter 18 < mm ≤ 30 ±0.65 ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 30 mA F F Reverse current I 0.01 μA typ., 10 μA max. V = 4 V R R Peak emission wavelength λ 940 nm typ. I = 20 mA P F Detector Light current I 0.5 mA min., 14 mA max. I = 20 mA, V = 10 V L F CE Dark current I 2 nA typ., 200 nA max. V = 10 V, 0 lx D CE Leakage current I --- --- LEAK Collector–Emitter saturated volt- V (sat) 0.1 V typ., 0.4 V max. I = 20 mA, I = 0.1 mA CE F L age Peak spectral sensitivity wave- λ 850 nm typ. V = 10 V P CE length Rising time tr 4 μs typ. V = 5 V, R = 100 Ω, I = 5 mA CC L L Falling time tf 4 μs typ. V = 5 V, R = 100 Ω, I = 5 mA CC L L 92 EE-SX153 Photomicrosensor (Transmissive) JAPAN EE-SX 153 ■ Engineering Data Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) Ta = 25°C V = 10 V CE IF Ta = −30°C PC Ta = 25°C Ta = 70°C Forward current I (mA) F Forward voltage V (V) Ambient temperature Ta (°C) F Relative Light Current vs. Ambi- Light Current vs. Collector−Emitter Dark Current vs. Ambient ent Temperature Characteristics Voltage Characteristics (Typical) Temperature Characteristics (Typical) (Typical) I = 20 mA Ta = 25°C F V = 10 V CE V = 5 V CE 0 lx I = 50 mA F I = 40 mA F I = 30 mA F I = 20 mA F I = 10 mA F Collector−Emitter voltage V (V) CE Ambient temperature Ta (°C) Ambient temperature Ta (°C) Response Time vs. Load Resist- Sensing Position Characteristics Sensing Position Characteristics ance Characteristics (Typical) (Typical) (Typical) 120 120 V = 5 V I = 20 mA CC F I = 20 mA F Ta = 25°C VCE = 10 V V = 10 V CE Ta = 25°C Ta = 25°C 100 100 (Center of optical axis) d 80 80 d 60 60 40 40 20 20 0 0 −0.5 −0.25 0 0.25 0.5 0.75 1.0 −2.0 −1.5 −1.0 −0.5 0 0.5 1.0 1.5 2.0 Load resistance R (kΩ) L Distance d (mm) Distance d (mm) Response Time Measurement Circuit Input 90 % Output 10 % Input Output EE-SX153 Photomicrosensor (Transmissive) 93 Response time tr, tf (μs) Light current I (mA) L Forward current I (mA) F Collector dissipation P (mW) C Relative light current I (%) L Relative light current I (%) L Forward current I (mA) F (Center of optical axis) Dark current I (nA) D Relative light current I (%) L Light current I (mA) L Photomicrosensor (Transmissive) EE-SX198 Be sure to read Precautions on page 25. ■ Dimensions ■ Features General-purpose model with a 3-mm-wide slot. Note: All units are in millimeters unless otherwise indicated. PCB mounting type. 12.2±0.3 High resolution with a 0.5-mm-wide aperture. ■ Absolute Maximum Ratings (Ta = 25°C) 5±0.1 Item Symbol Rated value Four, C0.3 0.5±0.1 Two, C1±0.3 Emitter Forward current I 50 mA F (see note 1) Optical Pulse forward cur- I 1 A axis FP 10±0.2 8.5±0.1 rent (see note 2) 6.5+0.1 Reverse voltage V 4 V R Detector Collector–Emitter V 30 V CEO 6.2±0.5 voltage Emitter–Collector V --- ECO Four, 0.5±0.1 Four, 0.25±0.1 voltage 2.5±0.1 Cross section BB 9.2±0.3 Collector current I 20 mA C Cross section AA Collector dissipa- P 100 mW C tion (see note 1) Ambient tem- Operating Topr –25°C to 85°C Internal Circuit perature Storage Tstg –30°C to 100°C K C Soldering temperature Tsol 260°C (see note 3) A E Note: 1. Refer to the temperature rating chart if the ambient temper- ature exceeds 25°C. Terminal No. Name 2. The pulse width is 10 μs maximum with a frequency of 100 Hz. A Anode 3. Complete soldering within 10 seconds. K Cathode Unless otherwise specified, C Collector the tolerances are ±0.2 mm. E Emitter ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition 1.2 V typ., 1.4 V max. I = 30 mA Emitter Forward voltage V F F Reverse current I 0.01 μA typ., 10 μA max. V = 4 V R R Peak emission wavelength λ 940 nm typ. I = 20 mA P F Detector Light current I 0.5 mA min., 14 mA max. I = 20 mA, V = 5 V L F CE Dark current I 2 nA typ., 200 nA max. V = 20 V, 0 lx D CE Leakage current I --- --- LEAK Collector–Emitter saturated volt- V (sat) 0.1 V typ., 0.4 V max. I = 40 mA, I = 0.5 mA CE F L age Peak spectral sensitivity wave- λ 850 nm typ. V = 10 V P CE length Rising time tr 4 μs typ. V = 5 V, R = 100 Ω, I = 5 mA CC L L Falling time tf 4 μs typ. V = 5 V, R = 100 Ω, I = 5 mA CC L L 94 EE-SX198 Photomicrosensor (Transmissive) ■ Engineering Data Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) Ta = 25°C V = 10 V CE IF Ta = −30°C PC Ta = 25°C Ta = 70°C Forward current I (mA) F Forward voltage V (V) Ambient temperature Ta (°C) F Relative Light Current vs. Ambi- Light Current vs. Collector−Emitter Dark Current vs. Ambient ent Temperature Characteristics Voltage Characteristics (Typical) Temperature Characteristics (Typical) (Typical) Ta = 25°C I = 50 mA I = 20 mA V = 10 V F F CE V = 5 V 0 lx CE I = 40 mA F I = 30 mA F I = 20 mA F I = 10 mA F Collector−Emitter voltage V (V) CE Ambient temperature Ta (°C) Ambient temperature Ta (°C) Sensing Position Characteristics Sensing Position Characteristics Response Time vs. Load Resist- (Typical) (Typical) ance Characteristics (Typical) 120 V = 5 V I = 20 mA CC F I = 20 mA F Ta = 25°C V = 10 V CE V = 10 V CE Ta = 25°C Ta = 25°C 100 (Center of optical axis) 80 d 60 40 20 0 −2.0 −1.5 −1.0 −0.5 0 0.5 1.0 1.5 2.0 Load resistance R (kΩ) L Distance d (mm) Distance d (mm) Response Time Measurement Circuit Input 90 % Output 10 % Input Output EE-SX198 Photomicrosensor (Transmissive) 95 Response time tr, tf (μs) Light current I (mA) L Forward current I (mA) F Collector dissipation P (mW) C Relative light current I (%) Relative light current I (%) L L Forward current I (mA) F Dark current I (nA) Relative light current I (%) D L Light current I (mA) L (Center of optical axis) 7Photomicrosensor (Transmissive) EE-SX199 Be sure to read Precautions on page 25. ■ Dimensions ■ Features General-purpose model with a 3-mm-wide slot. Note: All units are in millimeters unless otherwise indicated. PCB mounting type. 12.2±0.3High resolution with a 0.5-mm-wide aperture. With a positioning boss. 5±0.1 ■ Absolute Maximum Ratings (Ta = 25°C) Two, C1±0.3 0.5±0.1 Four, C0.3 Item Symbol Rated value Optical axis Emitter Forward current I 50 mA F 10±0.2 (see note 1) 8.5±0.1 6.5±0.1 Pulse forward cur- I 1 A FP rent (see note 2) 6.2±0.5 Reverse voltage V 4 V R Detector Collector–Emitter V 30 V CEO Four, 0.25±0.1 Four, 0.5±0.1 voltage Cross section BB 2.5±0.1 Emitter–Collector V --- ECO 0 9.2±0.3 Two, 0.7 -0.1 dia. voltage Cross section AA K C Collector current I 20 mA C 4.3 A E Collector dissipa- P 100 mW C tion (see note 1) Internal Circuit Ambient tem- Operating Topr –25°C to 85°C perature Storage Tstg –40°C to K C 100°C Soldering temperature Tsol 260°C (see note 3) A E Note: 1. Refer to the temperature rating chart if the ambient temper- ature exceeds 25°C. Terminal No. Name 2. The pulse width is 10 μs maximum with a frequency of A Anode 100 Hz. K Cathode Unless otherwise specified, 3. Complete soldering within 10 seconds. C Collector the tolerances are ±0.2 mm. E Emitter ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.4 V max. I = 30 mA F F Reverse current I 0.01 μA typ., 10 μA max. V = 4 V R R Peak emission wavelength λ 940 nm typ. I = 20 mA P F Detector Light current I 0.5 mA min., 14 mA max. I = 20 mA, V = 5 V L F CE Dark current I 2 nA typ., 200 nA max. V = 20 V, 0 lx D CE Leakage current I --- --- LEAK Collector–Emitter saturated volt- V (sat) 0.1 V typ., 0.4 V max. I = 40 mA, I = 0.5 mA CE F L age Peak spectral sensitivity wave- λ 850 nm typ. V = 10 V P CE length Rising time tr 4 μs typ. V = 5 V, R = 100 Ω, I = 5 mA CC L L Falling time tf 4 μs typ. V = 5 V, R = 100 Ω, I = 5 mA CC L L 96 EE-SX199 Photomicrosensor (Transmissive) ■ Engineering Data Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) Ta = 25°C V = 5 V CE IF Ta = −30°C PC Ta = 25°C Ta = 70°C Forward current I (mA) F Forward voltage V (V) Ambient temperature Ta (°C) F Relative Light Current vs. Ambi- Light Current vs. Collector−Emitter Dark Current vs. Ambient ent Temperature Characteristics Voltage Characteristics (Typical) Temperature Characteristics (Typical) (Typical) Ta = 25°C I = 20 mA V = 10 V I = 50 mA F CE F V = 5 V 0 lx CE I = 40 mA F I = 30 mA F I = 20 mA F I = 10 mA F Collector−Emitter voltage V (V) CE Ambient temperature Ta (°C) Ambient temperature Ta (°C) Response Time vs. Load Resist- Sensing Position Characteristics Sensing Position Characteristics ance Characteristics (Typical) (Typical) (Typical) 120 V = 5 V I = 20 mA CC F I = 20 mA F Ta = 25°C V = 10 V CE V = 10 V CE Ta = 25°C Ta = 25°C 100 (Center of optical axis) 80 d 60 40 20 0 −2.0 −1.5 −1.0 −0.5 0 0.5 1.0 1.5 2.0 Distance d (mm) Load resistance R (kΩ) L Distance d (mm) Response Time Measurement Circuit Input 90 % Output 10 % Input Output EE-SX199 Photomicrosensor (Transmissive) 97 Response time tr, tf (μs) Light current I (mA) L Forward current I (mA) F Collector dissipation P (mW) C Relative light current I (%) Relative light current I (%) L L Forward current I (mA) F Dark current I (nA) D Light current I (mA) L Relative light current I (%) L (Center of optical axis) Photomicrosensor (Actuator Mounted) EE-SA102 Be sure to read Precautions on page 25. ■ Dimensions ■ Features An actuator can be attached. Note: All units are in millimeters unless otherwise indicated. PCB mounting type. 17 High resolution with a 0.5-mm-wide aperture. ■ Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rated value 6 Emitter Forward current I 50 mA F (see note 1) Pulse forward cur- I 1 A FP 0.5±0.1 rent (see note 2) Optical 13.5 axis 11 Reverse voltage V 4 V R Two, R1 Detector Collector–Emitter V 30 V CEO voltage 6.2±0.5 2.5 Emitter–Collector V --- ECO Two, 0.7 voltage 1.25±0.1 Four, 0.25 Four, 0.5 Cross section AA Collector current I 20 mA C Collector dissipa- P 100 mW C Cross section BB tion (see note 1) Ambient tem- Operating Topr –25°C to 85°C perature Storage Tstg –30°C to 5±0.1 Internal Circuit 100°C K C 0 Soldering temperature Tsol 260°C Two, 0.7 −0.1dia. 60° (see note 3) +0.1 Two, R0.2 1.8 −0.05 dia. Note: 1. Refer to the temperature rating chart if the ambient temper- A E R3 ature exceeds 25°C. 0.4 3 2. The pulse width is 10 μs maximum with a frequency of Terminal No. Name 100 Hz. Two, R0.2 Two, R0.2 3. Complete soldering within 10 seconds. A Anode 0.5 K Cathode Part C C Collector Unless otherwise specified, E Emitter the tolerances are ±0.2 mm. ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 30 mA F F Reverse current I 0.01 μA typ., 10 μA max. V = 4 V R R Peak emission wavelength λ 940 nm typ. I = 20 mA P F Detector Light current I 0.5 mA min., 14 mA max. I = 20 mA, V = 10 V L F CE Dark current I 2 nA typ., 200 nA max. V = 10 V, 0 lx D CE Leakage current I --- --- LEAK Collector–Emitter saturated volt- V (sat) 0.1 V typ., 0.4 V max. I = 20 mA, I = 0.1 mA CE F L age Peak spectral sensitivity wave- λ 850 nm typ. V = 10 V P CE length Rising time tr 4 μs typ. V = 5 V, R = 100 Ω, I = 5 mA CC L L Falling time tf 4 μs typ. V = 5 V, R = 100 Ω, I = 5 mA CC L L 98 EE-SA102 Photomicrosensor (Actuator Mounted) ■ Engineering Data Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) Ta = 25°C IF V = 10 V CE Ta = −30°C PC Ta = 25°C Ta = 70°C Ambient temperature Ta (°C) Forward current I (mA) F Forward voltage V (V) F Relative Light Current vs. Ambi- Light Current vs. Collector−Emitter Dark Current vs. Ambient ent Temperature Characteristics Voltage Characteristics (Typical) Temperature Characteristics (Typical) (Typical) Ta = 25°C V = 10 V I = 20 mA CE F 0 lx V = 5 V CE I = 50 mA F I = 40 mA F I = 30 mA F I = 20 mA F I = 10 mA F Collector−Emitter voltage V (V) CE Ambient temperature Ta (°C) Ambient temperature Ta (°C) Response Time vs. Load Resist- Sensing Position Characteristics Sensing Position Characteristics ance Characteristics (Typical) (Typical) (Typical) V = 5 V 120 CC I = 20 mA F Ta = 25°C V = 10 V I = 20 mA CE F V = 10 V Ta = 25°C CE 100 Ta = 25°C (Center of optical axis) 80 d 60 40 20 0 −2.0 −1.5 −1.0 −0.5 0 0.5 1.0 1.5 2.0 Load resistance R (kΩ) L Distance d (mm) Distance d (mm) Response Time Measurement Actuator Dimensions Circuit Input 2.5±0.2 dia. 90 % Output 10 % 0 1.6 −0.1dia. 13.7±0.1 Input 17±0.2 Note: 1. Make sure that the portions marked with dotted lines have no burrs. Output 2. The material of the actuator must be selected by considering the infrared permeability of the actuator. EE-SA102 Photomicrosensor (Actuator Mounted) 99 Light current I (mA) Response time tr, tf (μs) L Forward current I (mA) F Collector dissipation P (mW) C Relative light current I (%) L Relative light current I (%) Forward current I (mA) L F Dark current I (nA) D Relative light current I (%) L Light current I (mA) L (Center of optical axis) Photomicrosensor (Actuator Mounted) EE-SA104 Be sure to read Precautions on page 25. ■ Dimensions ■ Features An actuator can be attached. Note: All units are in millimeters unless otherwise indicated. PCB mounting type. High resolution with a 0.5-mm-wide aperture. 1±0.08 +0.05 9 1.6 0 dia. 6±0.15 ■ Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rated value 0.3±0.1 0.3±0.1 Emitter Forward current I 50 mA F 0.3±0.1 0.3±0.1 (see note 1) Two, 0.5 Part C Four, C0.3 Pulse forward cur- I 1 A FP rent (see note 2) Reverse voltage V 4 V R Optical 9.7 Detector Collector–Emitter V 30 V axis CEO 4.4 voltage Emitter–Collector V --- ECO voltage 9.3±1 0.7±0.1 +0.05 Collector current I 20 mA C 1.2 0 dia. 0.3 max. 0.25 max. Four, 0.5 Four, 0.25 Collector dissipa- P 100 mW C 6.75±0.2 tion (see note 1) Ambient tem- Operating Topr –25°C to 85°C Cross section AA Cross section BB perature Storage Tstg –30°C to Internal Circuit 100°C Soldering temperature Tsol 260°C K C (see note 3) Unless otherwise specified, the tolerances are as shown below. Note: 1. Refer to the temperature rating chart if the ambient temper- A E ature exceeds 25°C. Dimensions Tolerance 2. The pulse width is 10 μs maximum with a frequency of 3 mm max. ±0.3 100 Hz. Terminal No. Name 3 < mm ≤ 6 ±0.375 3. Complete soldering within 10 seconds. A Anode 6 < mm ≤ 10 ±0.45 K Cathode 10 < mm ≤ 18 ±0.55 C Collector 18 < mm ≤ 30 ±0.65 E Emitter ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 30 mA F F Reverse current I 0.01 μA typ., 10 μA max. V = 4 V R R Peak emission wavelength λ 940 nm typ. I = 20 mA P F Detector Light current I 0.5 mA min., 14 mA max. I = 20 mA, V = 10 V L F CE Dark current I 2 nA typ., 200 nA max. V = 10 V, 0 lx D CE Leakage current I --- --- LEAK Collector–Emitter saturated volt- V (sat) 0.1 V typ., 0.4 V max. I = 20 mA, I = 0.1 mA CE F L age Peak spectral sensitivity wave- λ 850 nm typ. V = 10 V P CE length Rising time tr 4 μs typ. V = 5 V, R = 100 Ω, I = 5 mA CC L L Falling time tf 4 μs typ. V = 5 V, R = 100 Ω, I = 5 mA CC L L 100 EE-SA104 Photomicrosensor (Actuator Mounted) ■ Engineering Data Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) Ta = 25°C V = 10 V CE IF Ta = −30°C PC Ta = 25°C Ta = 70°C Ambient temperature Ta (°C) Forward current I (mA) F Forward voltage V (V) F Light Current vs. Collector−Emitter Relative Light Current vs. Ambi- Dark Current vs. Ambient Voltage Characteristics (Typical) ent Temperature Characteristics Temperature Characteristics (Typical) (Typical) Ta = 25°C I = 50 mA F I = 20 mA F V = 10 V CE V = 5 V CE 0 lx I = 40 mA F I = 30 mA F I = 20 mA F I = 10 mA F Collector−Emitter voltage V (V) CE Ambient temperature Ta (°C) Ambient temperature Ta (°C) Response Time vs. Load Resist- Sensing Position Characteristics Sensing Position Characteristics ance Characteristics (Typical) (Typical) (Typical) 120 V = 5 V CC I = 20 mA F Ta = 25°C I = 20 mA F V = 10 V CE V = 10 V CE Ta = 25°C 100 Ta = 25°C (Center of optical axis) 80 d 60 40 20 0 −2.0 −1.5 −1.0 −0.5 0 0.5 1.0 1.5 2.0 Distance d (mm) Load resistance R (kΩ) L Distance d (mm) Response Time Measurement Actuator Dimensions Circuit Input 2.2±0.1 dia. 90 % Output 10 % 0 1.5 −0.1dia. Input Output Note: 1. Make sure that the portions marked with dotted lines have no burrs. 2. The material of the actuator must be selected by considering the infrared permeability of the actuator. EE-SA104 Photomicrosensor (Actuator Mounted) 101 Response time tr, tf (μs) Light current I (mA) Forward current I (mA) L F Collector dissipation P (mW) C Relative light current I (%) L Forward current I (mA) F Relative light current I (%) L Dark current I (nA) D Relative light current I (%) L Light current I (mA) L (Center of optical axis) Photomicrosensor (Actuator) EE-SA105 Be sure to read Precautions on page 25. ■ Dimensions ■ Features Model has an actuator. Note: All units are in millimeters unless otherwise indicated. Low operating force (0.15 N (15 gf)). Connects to circuits with ease. ■ Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rated value R0.6 1.4 dia. 1.4 Emitter Forward current I 50 mA F (see note 1) Pulse forward cur- I 1 A FP rent (see note 2) Actuator Reverse voltage V 4 V 14.2±0.3 R Collector–Emitter V 30 V CEO 8.2 voltage 6.2 Detector Emitter–Collector V 5 V ECO voltage Collector mark 9±1 Collector current I 20 mA C Four, 0.5 Four, 0.25 Collector dissipa- P 100 mW 6.8±0.5 C tion (see note 1) 2.5 Ambient tem- Operating Topr –25°C to 70°C perature Storage Tstg –40°C to Internal Circuit 100°C K C Soldering temperature Tsol 260°C Unless otherwise specified, the (see note 3) tolerances are as shown below. Note: 1. Refer to the temperature rating chart if the ambient temper- Dimensions Tolerance A E ature exceeds 25°C. 3 mm max. ±0.3 2. The pulse width is 10 μs maximum with a frequency of Terminal No. Name 100 Hz. 3 < mm ≤ 6 ±0.375 A Anode 3. Complete soldering within 10 seconds. 6 < mm ≤ 10 ±0.45 K Cathode 10 < mm ≤ 18 ±0.55 C Collector 18 < mm ≤ 30 ±0.65 E Emitter ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 30 mA F F Reverse current I 0.01 μA typ., 10 μA max. V = 4 V R R Peak emission wavelength λ 940 nm typ. I = 20 mA P F Detector Light current I 0.5 mA min. I = 20 mA, V = 5 V at free position (FP) L F CE Dark current I 2 nA typ., 200 nA max. V = 10 V, 0 lx D CE Leakage current I 10 μA max. I = 20 mA, V = 5 V at operating position (OP) LEAK F CE Collector–Emitter saturated V (sat) 0.15 V typ., 0.4 V max. I = 20 mA, I = 0.1 mA CE F L voltage Peak spectral sensitivity wave- λ 850 nm typ. V = 10 V P CE length Rising time tr --- --- Falling time tf --- --- ■ Mechanical Characteristics Actuator operation Free position (FP): 14.2±0.3 mm (I = 20 mA, V = 5 V) Operating position (OP): 13.0 mm min. F CE Total travel position (TTP): 12.1 mm max. (see note 1) Operating force (see note 2) 0.15 N (15 gf) max. Mechanical life expectancy 500,000 operations min. (The actuator traveling from its FP to FP via TTP is regarded as one operation.) 102 EE-SA105 Photomicrosensor (Actuator) Note: 1. Free position (FP): The distance between the bottom of the housing to the top of the actuator without any external force imposed on the actuator. Operating position (OP): The distance between the bottom of the housing to the top of the actuator when the actuator is pressed and the I becomes I or less. L LEAK Total travel position (TTP): The distance between the bottom of the housing to the top of the actuator when the actuator is fully pressed. 2. Operating force: The force required to press the actuator from its FP to OP. ■ Engineering Data Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) Ta = 25°C IF V = 10 V CE Ta = −30°C PC Ta = 25°C Ta = 70°C Forward voltage V (V) Forward current I (mA) F F Ambient temperature Ta (°C) Light Current vs. Collector−Emitter Relative Light Current vs. Ambi- Dark Current vs. Ambient Voltage Characteristics (Typical) ent Temperature Characteristics Temperature Characteristics (Typical) (Typical) Ta = 25°C I = 20 mA V = 10 V F CE V = 5 V 0 lx CE I = 50 mA F I = 40 mA F I = 30 mA F I = 20 mA F I = 10 mA F Collector−Emitter voltage V (V) CE Ambient temperature Ta (°C) Ambient temperature Ta (°C) Sensing Position Characteristics (Typical) I = 20 mA F V = 10 V CE Ta = 25°C d (FP point: 0 mm) Distance d (mm) EE-SA105 Photomicrosensor (Actuator) 103 Relative light current I (%) Forward current I (mA) L Light current I (mA) F L Collector dissipation P (mW) C Forward current I (mA) F Relative light current I (%) L Dark current I (nA) D Light current I (mA) L Photomicrosensor (Actuator) EE-SA113 Be sure to read Precautions on page 25. ■ Dimensions ■ Features Model has an actuator. Note: All units are in millimeters unless otherwise indicated. Low operating force (0.15 N (15 gf)). Connects to circuits with ease. ■ Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rated value Emitter Forward current I 50 mA F (see note 1) Pulse forward cur- I 1 A FP rent (see note 2) Reverse voltage V 4 V R Collector–Emitter V 30 V CEO voltage Detector Emitter–Collector V 5 V ECO voltage Collector current I 20 mA C Collector dissipa- P 100 mW C tion (see note 1) Ambient tem- Operating Topr –25°C to 70°C perature Storage Tstg –40°C to 85°C Internal Circuit Soldering temperature Tsol 260°C K C Unless otherwise specified, the (see note 3) tolerances are as shown below. Note: 1. Refer to the temperature rating chart if the ambient temper- ature exceeds 25°C. Dimensions Tolerance A E 2. The pulse width is 10 μs maximum with a frequency of 3 mm max. ±0.3 100 Hz. 3 < mm ≤ 6 ±0.375 Terminal No. Name 3. Complete soldering within 10 seconds. 6 < mm ≤ 10 ±0.45 A Anode K Cathode 10 < mm ≤ 18 ±0.55 C Collector 18 < mm ≤ 30 ±0.65 E Emitter ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 30 mA F F Reverse current I 0.01 μA typ., 10 μA max. V = 4 V R R Peak emission wavelength λ 940 nm typ. I = 20 mA P F Detector Light current I 0.5 mA min. I = 20 mA, V = 5 V at free position (FP) L F CE Dark current I 2 nA typ., 200 nA max. V = 10 V, 0 lx D CE Leakage current I 10 μA max. I = 20 mA, V = 5 V at operating position LEAK F CE (OP) Collector–Emitter saturated voltage V (sat) 0.15 V typ., 0.4 V max. I = 20 mA, I = 0.1 mA CE F L Peak spectral sensitivity wavelength λ 850 nm typ. V = 10 V P CE Rising time tr --- --- Falling time tf --- --- ■ Mechanical Characteristics Actuator operation Free position (FP): 11.4±0.3 mm (I = 20 mA, V = 5 V) Operating position (OP): 10.2 mm min. F CE Total travel position (TTP): 9.3 mm max. (see note 1) Operating force (see note 2) 0.15 N (15 gf) max. Mechanical life expectancy 500,000 operations min. (The actuator traveling from its FP to FP via TTP is regarded as one operation.) 104 EE-SA113 Photomicrosensor (Actuator) Note: 1. Free position (FP): The distance between the bottom of the housing to the top of the actuator without any external force imposed on the actuator. Operating position (OP): The distance between the bottom of the housing to the top of the actuator when the actuator is pressed and the I becomes I or less. L LEAK Total travel position (TTP): The distance between the bottom of the housing to the top of the actuator when the actuator is fully pressed. 2. Operating force: The force required to press the actuator from its FP to OP. ■ Engineering Data Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) Ta = 25°C IF V = 10 V CE Ta = −30°C PC Ta = 25°C Ta = 70°C Forward current I (mA) Forward voltage V (V) F F Ambient temperature Ta (°C) Light Current vs. Collector−Emitter Relative Light Current vs. Ambi- Dark Current vs. Ambient Voltage Characteristics (Typical) ent Temperature Characteristics Temperature Characteristics (Typical) (Typical) Ta = 25°C I = 20 mA V = 10 V F CE V = 5 V 0 lx CE I = 50 mA F I = 40 mA F I = 30 mA F I = 20 mA F I = 10 mA F Collector−Emitter voltage V (V) CE Ambient temperature Ta (°C) Ambient temperature Ta (°C) Sensing Position Characteristics (Typical) I = 20 mA F V = 5 V CE Ta = 25°C d (FP point: 0 mm) Distance d (mm) EE-SA113 Photomicrosensor (Actuator) 105 Relative light current I (%) Forward current I (mA) L Light current I (mA) F L Collector dissipation P (mW) C Relative light current I (%) L Forward current I (mA) F Dark current I (nA) D Light current I (mA) L Photomicrosensor (Transmissive) EE-SG3/EE-SG3-B Be sure to read Precautions on page 25. ■ Dimensions ■ Features Dust-proof model. Note: All units are in millimeters unless otherwise indicated. Solder terminal model (EE-SG3). PCB terminal model (EE-SG3-B). ■ Absolute Maximum Ratings (Ta = 25°C) 13 Two, 3.2±0.2 19±0.1 dia. holes 25.4±0.2 Item Symbol Rated value 3.6±0.2 Emitter Forward current I 50 mA F (see note 1) Optical axis Pulse forward cur- I 1 A FP rent (see note 2) Reverse voltage V 4 V R 1.2 Detector Collector–Emitter V 30 V CEO Four, 0.5 Four, 0.25 voltage 2.54±0.3 0.8 7.62±0.3 0.6 Emitter–Collector V --- Four, 1.5 ECO Cross section AA 2.54 voltage Collector current I 20 mA C Cross section AA Collector dissipa- P 100 mW C tion (see note 1) Internal Circuit Ambient tem- Operating Topr –25°C to 85°C perature Storage Tstg –30°C to 100°C K C Soldering temperature Tsol 260°C Unless otherwise specified, the tolerances are as shown below. (see note 3) A E Dimensions Tolerance Note: 1. Refer to the temperature rating chart if the ambient temper- ature exceeds 25°C. 3 mm max. ±0.3 2. The pulse width is 10 μs maximum with a frequency of Terminal No. Name 3 < mm ≤ 6 ±0.375 100 Hz. A Anode 6 < mm ≤ 10 ±0.45 3. Complete soldering within 10 seconds. K Cathode 10 < mm ≤ 18 ±0.55 C Collector 18 < mm ≤ 30 ±0.65 E Emitter ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 30 mA F F Reverse current I 0.01 μA typ., 10 μA max. V = 4 V R R Peak emission wavelength λ 940 nm typ. I = 20 mA P F Detector Light current I 2 mA min., 40 mA max. I = 15 mA, V = 10 V L F CE Dark current I 2 nA typ., 200 nA max. V = 10 V, 0 lx D CE Leakage current I --- --- LEAK Collector–Emitter saturated volt- V (sat) 0.1 V typ., 0.4 V max. I = 30 mA, I = 1 mA CE F L age Peak spectral sensitivity wave- λ 850 nm typ. V = 10 V P CE length Rising time tr 4 μs typ. V = 5 V, R = 100 Ω, I = 5 mA CC L L Falling time tf 4 μs typ. V = 5 V, R = 100 Ω, I = 5 mA CC L L 106 EE-SG3/EE-SG3-B Photomicrosensor (Transmissive) ■ Engineering Data Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) Ta = 25°C V = 10 V CE IF Ta = −30°C PC Ta = 25°C Ta = 70°C Ambient temperature Ta (°C) Forward voltage V (V) Forward current I (mA) F F Light Current vs. Collector−Emitter Relative Light Current vs. Ambi- Dark Current vs. Ambient Voltage Characteristics (Typical) ent Temperature Characteristics Temperature Characteristics (Typical) (Typical) Ta = 25°C I = 20 mA F V = 10 V CE V = 5 V CE 0 lx I = 25 mA F I = 20 mA F I = 15 mA F I = 10 mA F I = 5 mA F Collector−Emitter voltage V (V) CE Ambient temperature Ta (°C) Ambient temperature Ta (°C) Response Time vs. Load Resist- Sensing Position Characteristics Sensing Position Characteristics ance Characteristics (Typical) (Typical) (Typical) 120 V = 5 V IF = 20 mA CC I = 20 mA F V = 10 V Ta = 25°C CE V = 10 V CE Ta = 25°C 100 Ta = 25°C (Center of optical axis) 80 d 60 40 20 0 −2.0 −1.5 −1.0 −0.5 0 0.5 1.0 1.5 2.0 Distance d (mm) Load resistance R (kΩ) L Distance d (mm) Response Time Measurement Circuit Input 90 % Output 10 % Input Output EE-SG3/EE-SG3-B Photomicrosensor (Transmissive) 107 Forward current I (mA) F Response time tr, tf (μs) Light current I (mA) L Collector dissipation P (mW) C Relative light current I (%) L Forward current I (mA) Relative light current I (%) F L Dark current I (nA) D Light current I (mA) L Relative light current I (%) L (Center of optical axis) Photomicrosensor (Transmissive) EE-SH3 Series Be sure to read Precautions on page 25. ■ Dimensions ■ Features High-resolution model with a 0.2-mm-wide or 0.5-mm-wide sensing Note: All units are in millimeters unless otherwise indicated. aperture, high-sensitivity model with a 1-mm-wide sensing aper- Four, R1 Two, C1.5 ture, and model with a horizontal sensing aperture are available. Solder terminal models: 6.2 EE-SH3/-SH3-CS/-SH3-DS/-SH3-GS PCB terminal models: 19±0.15 EE-SH3-B/-SH3-C/-SH3-D/-SH3-G 25.4 Matted Solder terminal PCB terminal Cross section AA Cross section AA Two, 3.2±0.2 Center mark ■ Absolute Maximum Ratings (Ta = 25°C) dia. holes 3.4±0.2 Item Symbol Rated value Emitter Forward current I 50 mA F 10.2 7.2±0.2 (see note 1) 7.2±0.2 Pulse forward cur- I 1 A FP rent (see note 2) Four, 0.25 Reverse voltage V 4 V R 7.6±0.3 2.54±0.2 Detector Collector–Emitter V 30 V CEO voltage Model Aperture (a x b) Emitter–Collector V --- ECO EE-SH3(-B) 2.1 x 0.5 voltage EE-SH3-C(S) 2.1 x 1.0 Collector current I 20 mA C EE-SH3-D(S) 2.1 x 0.2 Collector dissipa- P 100 mW C Internal Circuit EE-SH3-G(S) 0.5 x 2.1 tion (see note 1) K C Ambient tem- Operating Topr –25°C to 85°C Unless otherwise specified, the perature Storage Tstg –30°C to 100°C tolerances are as shown below. Soldering temperature Tsol 260°C A E Dimensions Tolerance (see note 3) 3 mm max. ±0.2 Note: 1. Refer to the temperature rating chart if the ambient temper- Terminal No. Name 3 < mm ≤ 6 ±0.24 ature exceeds 25°C. A Anode 2. The pulse width is 10 μs maximum with a frequency of 6 < mm ≤ 10 ±0.29 K Cathode 100 Hz. 10 < mm ≤ 18 ±0.35 C Collector 3. Complete soldering within 10 seconds. 18 < mm ≤ 30 ±0.42 E Emitter ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition EE-SH3(-B) EE-SH3-C(S) EE-SH3-D(S) EE-SH3-G(S) Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 30 mA F F Reverse current I 0.01 μA typ., 10 μA max. V = 4 V R R Peak emission wave- λ 940 nm typ. I = 20 mA P F length Detector Light current I 0.5 to 14 mA typ. 1 to 28 mA typ. 0.1 mA min. 0.5 to 14 mA I = 20 mA, L F V = 10 V CE Dark current I 2 nA typ., 200 nA max. V = 10 V, D CE 0 lx Leakage current I --- --- LEAK Collector–Emitter satu- V (sat) 0.1 V typ., 0.4 V max. --- 0.1 V typ., I = 20 mA, CE F rated voltage 0.4 V max. I = 0.1 mA L Peak spectral sensitivity λ 850 nm typ. V = 10 V P CE wavelength Rising time tr 4 μs typ. V = 5 V, CC R = 100 Ω, Falling time tf 4 μs typ. L I = 5 mA L 108 EE-SH3 Series Photomicrosensor (Transmissive) ■ Engineering Data Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) Ta = 25°C IF V = 10 V CE Ta = −30°C PC Ta = 25°C Ta = 70°C Forward current I (mA) Forward voltage V (V) F F Ambient temperature Ta (°C) Relative Light Current vs. Ambi- Light Current vs. Collector−Emitter Dark Current vs. Ambient Voltage Characteristics (EE-SH3(-B)) ent Temperature Characteristics Temperature Characteristics (Typical) (Typical) V = 10 V Ta = 25°C I = 20 mA CE F 0 lx V = 5 V CE I = 50 mA F I = 40 mA F I = 30 mA F I = 20 mA F I = 10 mA F Collector−Emitter voltage V (V) CE Ambient temperature Ta (°C) Ambient temperature Ta (°C) Sensing Position Characteristics Sensing Position Characteristics Response Time vs. Load Resist- (EE-SH3-D(S)) (EE-SH3(-B)) ance Characteristics (Typical) I = 20 mA V = 5 V F CC I = 20 mA F V = 10 V Ta = 25°C CE V = 10 V CE Ta = 25°C Ta = 25°C Center of optical axis Center of optical axis Load resistance R (kΩ) L Distance d (mm) Distance d (mm) Sensing Position Characteristics Sensing Position Characteristics Response Time Measurement (EE-SH3-G(S)) (EE-SH3-C(S)) Circuit I = 20 mA F I = 20 mA F V = 10 V CE V = 10 V Input CE Ta = 25°C Ta = 25°C Center of optical axis − 90 % Output 10 % 0 + d Input Center of optical axis Output Distance d (mm) Distance d (mm) EE-SH3 Series Photomicrosensor (Transmissive) 109 Response time tr, tf (μs) Forward current I (mA) F Relative light current I (%) Light current I (mA) L L Collector dissipation P (mW) C Relative light current I (%) Relative light current I (%) L L Relative light current I (%) Forward current I (mA) L F Dark current I (nA) D Relative light current I (%) L Light current I (mA) L Photomicrosensor (Transmissive) EE-SJ3 Series Be sure to read Precautions on page 25. ■ Dimensions ■ Features High-resolution model with a 0.2-mm-wide sensing aperture, high- Note: All units are in millimeters unless otherwise indicated. sensitivity model with a 1-mm-wide sensing aperture, and model 0.3 Center mark with a horizontal sensing aperture are available. ■ Absolute Maximum Ratings (Ta = 25°C) 6.2 Item Symbol Rated value Emitter Forward current I 50 mA (see note 1) F 0.2 Pulse forward I 1 A (see note 2) FP current Reverse voltage V 4 V R 10.2 Detector Collector–Emit- V 30 V 7.2±0.2 CEO ter voltage Emitter–Collec- V --- ECO 6 tor voltage Four, 0.5 Four, 0.25 Collector cur- I 20 mA C 7.6±0.3 rent 2.54±0.2 Cross section BB Collector dissi- P 100 mW (see note C Cross section AA pation 1) Ambient tem- Operating Topr –25°C to 85°C perature Storage Tstg –30°C to 100°C Model Aperture (a x b) Soldering temperature Tsol 260°C EE-SJ3-C 2.1 x 1.0 (see note 3) EE-SJ3-D 2.1 x 0.2 Internal Circuit Note: 1. Refer to the temperature rating chart if the ambient temper- EE-SJ3-G 0.5 x 2.1 ature exceeds 25°C. K C 2. The pulse width is 10 μs maximum with a frequency of Unless otherwise specified, the 100 Hz. tolerances are as shown below. 3. Complete soldering within 10 seconds. A E Dimensions Tolerance 3 mm max. ±0.3 Terminal No. Name 3 < mm ≤ 6 ±0.375 A Anode 6 < mm ≤ 10 ±0.45 K Cathode 10 < mm ≤ 18 ±0.55 C Collector E Emitter 18 < mm ≤ 30 ±0.65 ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition EE-SJ3-C EE-SJ3-D EE-SJ3-G Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 30 mA F F Reverse current I 0.01 μA typ., 10 μA max. V = 4 V R R Peak emission wave- λ 940 nm typ. I = 20 mA P F length Detector Light current I 1 to 28 mA typ. 0.1 mA min. 0.5 to 14 mA I = 20 mA, V = 10 V L F CE Dark current I 2 nA typ., 200 nA max. V = 10 V, 0 lx D CE Leakage current I --- --- LEAK Collector–Emitter satu- V (sat) 0.1 V typ., --- 0.1 V typ., I = 20 mA, CE F rated voltage 0.4 V max. 0.4 V max. I = 0.1 mA L Peak spectral sensitivity λ 850 nm typ. V = 10 V P CE wavelength Rising time tr 4 μs typ. V = 5 V, CC R = 100 Ω, Falling time tf 4 μs typ. L I = 5 mA L 110 EE-SJ3 Series Photomicrosensor (Transmissive) ■ Engineering Data Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) Ta = 25°C IF V = 10 V CE Ta = −30°C PC Ta = 25°C Ta = 70°C Forward current I (mA) Forward voltage V (V) F F Ambient temperature Ta (°C) Relative Light Current vs. Ambi- Light Current vs. Collector−Emitter Dark Current vs. Ambient Voltage Characteristics (EE-SJ3-G) ent Temperature Characteristics Temperature Characteristics (Typical) (Typical) V = 10 V Ta = 25°C I = 20 mA CE F 0 lx V = 5 V CE I = 50 mA F I = 40 mA F I = 30 mA F I = 20 mA F I = 10 mA F Collector−Emitter voltage V (V) CE Ambient temperature Ta (°C) Ambient temperature Ta (°C) Response Time vs. Load Resist- Sensing Position Characteristics Sensing Position Characteristics ance Characteristics (Typical) (EE-SJ3-D) (EE-SJ3-G) V = 5 V CC I = 20 mA I = 20 mA F F Ta = 25°C V = 10 V V = 10 V CE CE Ta = 25°C Ta = 25°C Center of optical axis − 0 + d Center of optical axis Load resistance R (kΩ) L Distance d (mm) Distance d (mm) Sensing Position Characteristics Response Time Measurement (EE-SJ3-C) Circuit I = 20 mA F V = 10 V CE Input Ta = 25°C Center of optical axis 90 % Output 10 % Input Output Distance d (mm) EE-SJ3 Series Photomicrosensor (Transmissive) 111 Response time tr, tf (μs) Relative light current I (%) L Forward current I (mA) Light current I (mA) F L Collector dissipation P (mW) C Relative light current I (%) Relative light current I (%) L L Forward current I (mA) F Dark current I (nA) D Relative light current I (%) L Light current I (mA) L Photomicrosensor (Transmissive) EE-SJ5-B Be sure to read Precautions on page 25. ■ Dimensions ■ Features General-purpose model with a 5-mm-wide slot. Note: All units are in millimeters unless otherwise indicated. PCB mounting type. 15.4 High resolution with a 0.5-mm-wide aperture. ■ Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rated value 5±0.2 2.1 × 0.5 Aperture holes (see note) Emitter Forward current I 50 mA F (see note 1) Pulse forward cur- I 1 A FP Optical axis rent (see note 2) Reverse voltage V 4 V 7.2±0.2 R Detector Collector–Emitter V 30 V CEO voltage Emitter–Collector V --- ECO Four, 0.25 Four, 0.5 voltage 9.2±0.3 2.54±0.2 Collector current I 20 mA C Cross section AA Collector dissipa- P 100 mW C Note: There is no difference in size tion (see note 1) between the slot on the emitter and that on the detector. Ambient tem- Operating Topr –25°C to 85°C Internal Circuit perature Storage Tstg –30°C to 100°C Soldering temperature Tsol 260°C K C Unless otherwise specified, the (see note 3) tolerances are as shown below. Note: 1. Refer to the temperature rating chart if the ambient temper- A E Dimensions Tolerance ature exceeds 25°C. 3 mm max. ±0.3 2. The pulse width is 10 μs maximum with a frequency of Terminal No. Name 100 Hz. 3 < mm ≤ 6 ±0.375 3. Complete soldering within 10 seconds. A Anode 6 < mm ≤ 10 ±0.45 K Cathode 10 < mm ≤ 18 ±0.55 C Collector E Emitter 18 < mm ≤ 30 ±0.65 ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 30 mA F F Reverse current I 0.01 μA typ., 10 μA max. V = 4 V R R Peak emission wavelength λ 940 nm typ. I = 20 mA P F Detector Light current I 0.5 mA min., 14 mA max. I = 20 mA, V = 10 V L F CE Dark current I 2 nA typ., 200 nA max. V = 10 V, 0 lx D CE Leakage current I --- --- LEAK Collector–Emitter saturated volt- V (sat) 0.1 V typ., 0.4 V max. I = 20 mA, I = 0.1 mA CE F L age Peak spectral sensitivity wave- λ 850 nm typ. V = 10 V P CE length Rising time tr 4 μs typ. V = 5 V, R = 100 Ω, I = 5 mA CC L L Falling time tf 4 μs typ. V = 5 V, R = 100 Ω, I = 5 mA CC L L 112 EE-SJ5-B Photomicrosensor (Transmissive) ■ Engineering Data Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) Ta = 25°C IF V = 10 V CE Ta = −30°C PC Ta = 25°C Ta = 70°C Forward current I (mA) Ambient temperature Ta (°C) Forward voltage V (V) F F Light Current vs. Collector−Emitter Relative Light Current vs. Ambi- Dark Current vs. Ambient Voltage Characteristics (Typical) ent Temperature Characteristics Temperature Characteristics (Typical) (Typical) I = 20 mA V = 10 V Ta = 25°C F CE V = 5 V 0 lx CE I = 50 mA F I = 40 mA F I = 30 mA F I = 20 mA F I = 10 mA F Collector−Emitter voltage V (V) CE Ambient temperature Ta (°C) Ambient temperature Ta (°C) Response Time vs. Load Resist- Sensing Position Characteristics Sensing Position Characteristics ance Characteristics (Typical) (Typical) (Typical) 120 V = 5 V CC I = 20 mA I = 20 mA F F Ta = 25°C V = 10 V V = 10 V CE CE Ta = 25°C 100 Ta = 25°C (Center of optical axis) 80 d 60 40 20 0 −2.0 −1.5 −1.0 −0.5 0 0.5 1.0 1.5 2.0 Load resistance R (kΩ) L Distance d (mm) Distance d (mm) Response Time Measurement Circuit Input 90 % Output 10 % Input Output EE-SJ5-B Photomicrosensor (Transmissive) 113 Light current I (mA) Response time tr, tf (μs) L Forward current I (mA) F Collector dissipation P (mW) C Relative light current I (%) L Relative light current I (%) L Forward current I (mA) F Dark current I (nA) Relative light current I (%) D L Light current I (mA) L (Center of optical axis) Photomicrosensor (Transmissive) EE-SV3 Series Be sure to read Precautions on page 25. ■ Dimensions ■ Features High-resolution model with a 0.2-mm-wide or 0.5-mm-wide sensing Note: All units are in millimeters unless otherwise indicated. aperture, high-sensitivity model with a 1-mm-wide sensing aper- ture, and model with a horizontal sensing aperture are available. Solder terminal models: EE-SV3/-SV3-CS/-SV3-DS/-SV3-GS PCB terminal models Center mark EE-SV3-B/-SV3-C/-SV3-D/-SV3-G ■ Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rated value Four, R1 Four, R1 Emitter Forward current I 50 mA F (see note 1) Pulse forward I 1 A FP current (see note 2) Two, Four, 0.5 Two, Four, 0.25 Four, 1.5 3.2±0.2 dia. Reverse voltage V 4 V R 3.2±0.2 dia. 2.54±0.2 holes holes Detector Collector–Emit- V 30 V 2.54±0.2 CEO ter voltage Cross section AA Cross section AA Emitter–Collec- V --- ECO Model Aperture (a x b) tor voltage EE-SV3(-B) 2.1 x 0.5 Collector current I 20 mA C EE-SV3-C(S) 2.1 x 1.0 Collector dissipa- P 100 mW C EE-SV3-D(S) 2.1 x 0.2 tion (see note 1) Internal Circuit EE-SV3-G(S) 0.5 x 2.1 Ambient tem- Operating Topr –25°C to perature 85°C K C Storage Tstg –30°C to Unless otherwise specified, the 100°C tolerances are as shown below. Soldering temperature Tsol 260°C A E Dimensions Tolerance (see note 3) 3 mm max. ±0.2 Note: 1. Refer to the temperature rating chart if the ambient temper- Terminal No. Name 3 < mm ≤ 6 ±0.24 ature exceeds 25°C. A Anode 2. The pulse width is 10 μs maximum with a frequency of 6 < mm ≤ 10 ±0.29 K Cathode 100 Hz. 10 < mm ≤ 18 ±0.35 C Collector 3. Complete soldering within 10 seconds. 18 < mm ≤ 30 ±0.42 E Emitter ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition EE-SV3(-B) EE-SV3-C(S) EE-SV3-D(S) EE-SV3-G(S) Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 30 mA F F Reverse current I 0.01 μA typ., 10 μA max. V = 4 V R R Peak emission wave- λ 940 nm typ. I = 20 mA P F length Detector Light current I 0.5 to 14 mA 1 to 28 mA 0.1 mA min. 0.5 to 14 mA I = 20 mA, L F V = 10 V CE Dark current I 2 nA typ., 200 nA max. V = 10 V, D CE 0 lx Leakage current I --- --- LEAK Collector–Emitter satu- V (sat) 0.1 V typ., 0.4 V max. --- 0.1 V typ., I = 20 mA, CE F rated voltage 0.4 V max. I = 0.1 mA L Peak spectral sensitivity λ 850 nm typ. V = 10 V P CE wavelength Rising time tr 4 μs typ. V = 5 V, CC R = 100 Ω, Falling time tf 4 μs typ. L I = 5 mA L 114 EE-SV3 Series Photomicrosensor (Transmissive) ■ Engineering Data Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) Ta = 25°C IF V = 10 V CE Ta = −30°C PC Ta = 25°C Ta = 70°C Forward current I (mA) F Forward voltage V (V) F Ambient temperature Ta (°C) Relative Light Current vs. Ambi- Light Current vs. Collector−Emitter Dark Current vs. Ambient ent Temperature Characteristics Voltage Characteristics (EE-SV3(-B)) Temperature Characteristics (Typical) (Typical) V = 10 V Ta = 25°C I = 20 mA CE F 0 lx V = 5 V CE I = 50 mA F I = 40 mA F I = 30 mA F I = 20 mA F I = 10 mA F Collector−Emitter voltage V (V) CE Ambient temperature Ta (°C) Ambient temperature Ta (°C) Response Time vs. Load Resist- Sensing Position Characteristics Sensing Position Characteristics ance Characteristics (Typical) (EE-SV3-D(S)) (EE-SV3(-B)) I = 20 mA I = 20 mA F V = 5 V F CC V = 10 V V = 10 V CE Ta = 25°C CE Ta = 25°C Ta = 25°C Center of optical axis Center of optical axis Load resistance R (kΩ) L Distance d (mm) Distance d (mm) Sensing Position Characteristics Sensing Position Characteristics Response Time Measurement (EE-SV3-G(S)) (EE-SV3-C(S)) Circuit I = 20 mA F I = 20 mA F V = 10 V Input CE V = 10 V CE Ta = 25°C Ta = 25°C Center of optical axis − 90 % Output 10 % 0 + d Input Center of optical axis Output Distance d (mm) Distance d (mm) EE-SV3 Series Photomicrosensor (Transmissive) 115 Response time tr, tf (μs) Light current I (mA) Relative light current I (%) L Forward current I (mA) L F Collector dissipation P (mW) C Relative light current I (%) Relative light current I (%) L L Relative light current I (%) L Forward current I (mA) F Dark current I (nA) D Relative light current I (%) L Light current I (mA) L Photomicrosensor (Transmissive) EE-SX298 Be sure to read Precautions on page 25. ■ Dimensions ■ Features General-purpose model with a 3-mm-wide slot. Note: All units are in millimeters unless otherwise indicated. PCB mounting type. 12.2±0.3 High resolution with a 0.5-mm-wide aperture. With a Photo-Darlington transistor as a detector element. ■ Absolute Maximum Ratings (Ta = 25°C) 5±0.1 Four, C0.3 Two, C1±0.3 Item Symbol Rated value 0.5±0.1 Emitter Forward current I 50 mA F Optical axis (see note 1) 10±0.2 Pulse forward cur- I 1 A FP 8.5±0.1 6.5±0.1 rent (see note 2) Reverse voltage V 4 V R 6.2±0.5 Detector Collector–Emitter V 35 V CEO voltage Four, Four, 0.25+0.1 0.5±0.1 Emitter–Collector V --- ECO voltage 2.5±0.1 9.2±0.3 Collector current I 20 mA Cross section BB Cross section AA C Collector dissipa- P 100 mW C tion (see note 1) Ambient tem- Operating Topr –25°C to 85°C Internal Circuit perature Storage Tstg –30°C to 100°C K C Soldering temperature Tsol 260°C (see note 3) Note: 1. Refer to the temperature rating chart if the ambient temper- A E ature exceeds 25°C. 2. The pulse width is 10 μs maximum with a frequency of 100 Hz. Terminal No. Name 3. Complete soldering within 10 seconds. A Anode K Cathode C Collector Unless otherwise specified, the tolerances are ±0.2 mm. E Emitter ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.4 V max. I = 20 mA F F Reverse current I 0.01 μA typ., 10 μA max. V = 4 V R R Peak emission wavelength λ 940 nm typ. I = 20 mA P F Detector Light current I 0.5 mA min., 20 mA max. I = 1 mA, V = 2 V L F CE Dark current I 2 nA typ., 1,000 nA max. V = 10 V, 0 lx D CE Leakage current I --- --- LEAK Collector–Emitter saturated volt- V (sat) 0.75 V typ., 1.0 V max. I = 2 mA, I = 0.5 mA CE F L age Peak spectral sensitivity wave- λ 780 nm typ. V = 5 V P CE length Rising time tr 70 μs typ. V = 5 V, R = 100 Ω, CC L I = 10 mA L Falling time tf 70 μs typ. V = 5 V, R = 100 Ω, CC L I = 10 mA L 116 EE-SX298 Photomicrosensor (Transmissive) ■ Engineering Data Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) Ta = 25°C V = 2 V CE IF Ta = −30°C PC Ta = 25°C Ta = 70°C Forward voltage V (V) Ambient temperature Ta (°C) F Forward current I (mA) F Relative Light Current vs. Ambi- Light Current vs. Collector−Emitter Dark Current vs. Ambient ent Temperature Characteristics Voltage Characteristics (Typical) Temperature Characteristics (Typical) (Typical) Ta = 25°C V = 10 V CE I = 1 mA F 0 lx V = 2 V CE I = 3.5 mA F I = 3 mA F I = 2.5 mA F I = 2 mA F I = 1.5 mA F I = 1 mA F Collector−Emitter voltage V (V) CE Ambient temperature Ta (°C) Ambient temperature Ta (°C) Sensing Position Characteristics Response Time vs. Load Resist- Sensing Position Characteristics (Typical) ance Characteristics (Typical) (Typical) 120 I = 20 mA F V = 5 V I = 20 mA CC F V = 10 V CE Ta = 25°C V = 10 V CE Ta = 25°C Ta = 25°C 100 (Center of optical axis) 80 d 60 40 20 0 −2.0 −1.5 −1.0 −0.5 0 0.5 1.0 1.5 2.0 Load resistance R (kΩ) L Distance d (mm) Distance d (mm) Response Time Measurement Circuit Input 90 % Output 10 % Input Output EE-SX298 Photomicrosensor (Transmissive) 117 Response time tr, tf (μs) Light current I (mA) L Forward current I (mA) F Collector dissipation P (mW) C Relative light current I (%) L Relative light current I (%) L Forward current I (mA) F Dark current I (nA) Relative light current I (%) D L Light current I (mA) L (Center of optical axis) Photomicrosensor (Transmissive) EE-SX301/-SX401 Be sure to read Precautions on page 25. ■ Dimensions ■ Features Incorporates an IC chip with a built-in detector element and ampli- Note: All units are in millimeters unless otherwise indicated. fier. Incorporates a detector element with a built-in temperature com- pensation circuit. Optical axis A wide supply voltage range: 4.5 to 16 VDC Directly connects with C-MOS and TTL. Center mark High resolution with a 0.5-mm-wide sensing aperture. 3.4±0.2 Dark ON model (EE-SX301) Light ON model (EE-SX401) Optical Optical axis axis ■ Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rated value Emitter Forward current I 50 mA F (see note 1) Five, 0.5 2.5±0.2 Reverse voltage V 4 V R Five, 0.25 Detector Power supply volt- V 16 V Cross section AA CC Cross section BB age Output voltage V 28 V OUT Internal Circuit Output current I 16 mA OUT K V Permissible output P 250 mW (see OUT O dissipation note 1) Unless otherwise specified, the Ambient tem- Operating Topr –40°C to 75°C A G tolerances are as shown below. perature Storage Tstg –40°C to 85°C Dimensions Tolerance Terminal No. Name Soldering temperature Tsol 260°C (see note 2) A Anode 3 mm max. ±0.3 K Cathode 3 < mm ≤ 6 ±0.375 Note: 1. Refer to the temperature rating chart if the ambient temper- ature exceeds 25°C. V Power supply 6 < mm ≤ 10 ±0.45 (Vcc) 2. Complete soldering within 10 seconds. 10 < mm ≤ 18 ±0.55 O Output (OUT) 18 < mm ≤ 30 ±0.65 G Ground (GND) ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 20 mA F F Reverse current I 0.01 μA typ., 10 μA max. V = 4 V R R Peak emission wave- λ 940 nm typ. I = 20 mA P F length Detector Low-level output voltage V 0.12 V typ., 0.4 V max. Vcc = 4.5 to 16 V, I = 16 mA, I = 0 mA (EE-SX301), OL OL F I = 8 mA (EE-SX401) F High-level output volt- V 15 V min. Vcc = 16 V, R = 1 kΩ, I = 8 mA (EE-SX301), I = 0 mA OH L F F age (EE-SX401) Current consumption I 3.2 mA typ., 10 mA max. V = 16 V CC CC Peak spectral sensitivity λ 870 nm typ. V = 4.5 to 16 V P CC wavelength LED current when output is OFF I 3 mA typ., 8 mA max. V = 4.5 to 16 V FT CC LED current when output is ON Hysteresis ΔH 15% typ. V = 4.5 to 16 V (see note 1) CC Response frequency f 3 kHz min. V = 4.5 to 16 V, I = 15 mA, I = 16 mA (see note 2) CC F OL Response delay time t (t )3 μs typ. V = 4.5 to 16 V, I = 15 mA, I = 16 mA (see note 3) PLH PHL CC F OL Response delay time t (t ) 20 μs typ. V = 4.5 to 16 V, I = 15 mA, I = 16 mA (see note 3) PHL PLH CC F OL 118 EE-SX301/-SX401 Photomicrosensor (Transmissive) Note: 1. Hysteresis denotes the difference in forward LED 3. The following illustrations show the definition of response current value, expressed in percentage, calculated delay time. The value in the parentheses applies to the EE- from the respective forward LED currents when the SX401. photo IC in turned from ON to OFF and when the photo IC in turned from OFF to ON. Input Input 2. The value of the response frequency is measured Output by rotating the disk as shown below. Output 2.1 mm EE-SX301 EE-SX401 Disk 0.5 mm 0.5 mm ■ Engineering Data Note: The values in the parentheses apply to the EE-SX401. Forward Current vs. Collector Forward Current vs. Forward LED Current vs. Supply Voltage Dissipation Temperature Rating Voltage Characteristics (Typical) (Typical) Ta = 25°C R = 1 kΩ L Ta = −30°C I OFF (I ON) Ta = 25°C FT FT Ta = 70°C I ON (I OFF) FT FT Forward voltage V (V) F Ambient temperature Ta (°C) Supply voltage V (V) CC LED Current vs. Ambient Temper- Low-level Output Voltage vs. Am- Low-level Output Voltage vs. ature Characteristics (Typical) bient Temperature Characteristics Output Current (Typical) (Typical) V = 5 V Ta = 25°C CC V = 5 V CC R = 330 Ω V = 5 V L CE I = 0 mA (15 mA) F I = 0 mA (15 mA) F I OFF (I ON) FT FT I = 16 mA OL I ON (I OFF) FT FT I = 5 mA OL Ambient temperature Ta (°C) Ambient temperature Ta (°C) Output current I (mA) C Current Consumption vs. Supply Response Delay Time vs. Forward Repeat Sensing Position Voltage (Typical) Current (Typical) Characteristics (Typical) VCC = 5 V Ta = 25°C Ta = 25°C R = 330 Ω I = 15 mA L F I = 0 mA (15 mA) F Ta = 25°C V = 5 V CC R = 330 Ω L V OUT n = repeat 20 times (EE-SX3@@) V OUT (EE-SX4@@) d = 0.01 mm 1 Center of optical axis Supply voltage V (V) Forward current I (mA) Distance d (mm) CC F EE-SX301/-SX401 Photomicrosensor (Transmissive) 119 Current consumption Icc (mA) LED current I (mA) FT Forward current I (mA) F Output allowable dissipation P (mW) C Low level output voltage V (V) OL Response delay time t , t (μs) PHL PLH Forward current I (mA) F Output transistor Low level output voltage V (V) LED current I (mA) OL FT Photomicrosensor (Transmissive) EE-SX3070/-SX4070 Be sure to read Precautions on page 25. ■ Dimensions ■ Features Incorporates an IC chip with a built-in detector element and ampli- Note: All units are in millimeters unless otherwise indicated. fier. Incorporates a detector element with a built-in temperature com- pensation circuit. A wide supply voltage range: 4.5 to 16 VDC Directly connects with C-MOS and TTL. Two, C1High resolution with a 0.5-mm-wide sensing aperture. Dark ON model (EE-SX3070) Optical Light ON model (EE-SX4070) axis ■ Absolute Maximum Ratings (Ta = 25°C) Two, 0.7 Item Symbol Rated value Emitter Forward current I 50 mA F Five, 0.25 (see note 1) Five, 0.5 (13.8) (1.25) (1.25) 2.35±0.1 Reverse voltage V 4 V R Detector Power supply volt- V 16 V CC age Output voltage V 28 V OUT Two, 0.7±0.1 dia. Internal Circuit Output current I 16 mA OUT Permissible output P 250 mW (see K V OUT dissipation note 1) O Unless otherwise specified, the Ambient tem- Operating Topr –40°C to 75°C A G perature tolerances are as shown below. Storage Tstg –40°C to 85°C Soldering temperature Tsol 260°C Dimensions Tolerance Terminal No. Name (see note 2) A Anode 3 mm max. ±0.3 Note: 1. Refer to the temperature rating chart if the ambient temper- K Cathode 3 < mm ≤ 6 ±0.375 ature exceeds 25°C. V Power supply 6 < mm ≤ 10 ±0.45 2. Complete soldering within 10 seconds. (Vcc) 10 < mm ≤ 18 ±0.55 O Output (OUT) 18 < mm ≤ 30 ±0.65 G Ground (GND) ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 20 mA F F Reverse current I 0.01 μA typ., 10 μA max. V = 4 V R R Peak emission wave- λ 940 nm typ. I = 20 mA P F length Detector Low-level output voltage V 0.12 V typ., 0.4 V max. V = 4.5 to 16 V, I = 16 mA, I = 0 mA (EE-SX3070), OL CC OL F I = 10 mA (EE-SX4070) F High-level output volt- V 15 V min. V = 16 V, R = 1 kΩ, I = 10 mA (EE-SX3070), OH CC L F age I = 0 mA (EE-SX4070) F Current consumption I 3.2 mA typ., 10 mA max. V = 16 V CC CC Peak spectral sensitivity λ 870 nm typ. V = 4.5 to 16 V P CC wavelength LED current when output is OFF I 10 mA max. V = 4.5 to 16 V FT CC LED current when output is ON Hysteresis ΔH 15% typ. V = 4.5 to 16 V (see note 1) CC Response frequency f3 kHz min. V = 4.5 to 16 V, I = 20 mA, I = 16 mA (see note 2) CC F OL Response delay time t (t )3 μs typ. V = 4.5 to 16 V, I = 20 mA, I = 16 mA (see note 3) PLH PHL CC F OL Response delay time t (t ) 20 μs typ. V = 4.5 to 16 V, I = 20 mA, I = 16 mA (see note 3) PHL PLH CC F OL 120 EE-SX3070/-SX4070 Photomicrosensor (Transmissive) 3. The following illustrations show the definition of response Note: 1. Hysteresis denotes the difference in forward LED delay time. The value in the parentheses applies to the EE- current value, expressed in percentage, calculated SX4070. from the respective forward LED currents when the photo IC in turned from ON to OFF and when the photo IC in turned from OFF to ON. Input Input 2. The value of the response frequency is measured Output by rotating the disk as shown below. Output 2.1 mm EE-SX3070 EE-SX4070 Disk 0.5 mm 0.5 mm ■ Engineering Data Note: The values in the parentheses apply to the EE-SX4070. Forward Current vs. Collector Forward Current vs. Forward LED Current vs. Supply Voltage Dissipation Temperature Rating Voltage Characteristics (Typical) (Typical) Ta = 25°C R = 1 kΩ L Ta = −30°C I OFF (I ON) FT FT Ta = 25°C Ta = 70°C I ON (I OFF) FT FT Forward voltage V (V) Supply voltage V (V) F CC Ambient temperature Ta (°C) Low-level Output Voltage vs. Am- Low-level Output Voltage vs. LED Current vs. Ambient Temper- bient Temperature Characteristics Output Current (Typical) ature Characteristics (Typical) (Typical) V = 5 V CC Ta = 25°C V = 5 V CC R = 330 Ω L I = 0 mA (15 mA) V = 5 V F CC I = 0 mA (15 mA) F I OFF (I ON) FT FT I = 16 mA OL I ON (I OFF) FT FT I = 5 mA OL Ambient temperature Ta (°C) Ambient temperature Ta (°C) Output current I (mA) C Current Consumption vs. Supply Response Delay Time vs. Forward Repeat Sensing Position Voltage (Typical) Current (Typical) Characteristics (Typical) VCC = 5 V Ta = 25°C Ta = 25°C R = 330 Ω I = 0 mA (15 mA) L I = 15 mA F F Ta = 25°C V = 5 V CC R = 330 Ω L V OUT n = repeat 20 times (EE-SX3@@) V OUT (EE-SX4@@) d = 0.01 mm 1 Center of optical axis Supply voltage V (V) CC Forward current I (mA) Distance d (mm) F EE-SX3070/-SX4070 Photomicrosensor (Transmissive) 121 LED current I (mA) FT Forward current I (mA) Current consumption Icc (mA) F Output allowable dissipation P (mW) C Low level output voltage V (V) OL Forward current I (mA) Response delay time t , t (μs) F PHL PLH Output transistor LED current I (mA) Low level output voltage V (V) FT OL Photomicrosensor (Transmissive) EE-SX3081/-SX4081 Be sure to read Precautions on page 25. ■ Dimensions ■ Features Incorporates an IC chip with a built-in detector element and ampli- Note: All units are in millimeters unless otherwise indicated. fier. Incorporates a detector element with a built-in temperature com- pensation circuit. A wide supply voltage range: 4.5 to 16 VDC Four, C0.3Directly connects with C-MOS and TTL. 5±0.1 13.7+0.3High resolution with a 0.5-mm-wide sensing aperture. Two, C1±0.3Dark ON model (EE-SX3081) Light ON model (EE-SX4081) 2.5±0.2 7.5±0.2 Optical ■ Absolute Maximum Ratings (Ta = 25°C) 10±0.2 8.5±0.1 axis 6.5±0.1 2.5+0.1 Item Symbol Rated value 6.2±0.5 8.2±0.5 Emitter Forward current I 50 mA F Five, 0.25±0.1 (Five, 0.5±0.1) (see note 1) Reverse voltage V 4 V (10.5) Cross section AA (2.5) R Detector Power supply volt- V 16 V CC Cross section BB age Output voltage V 28 V OUT Output current I 16 mA OUT Internal Circuit Permissible output P 250 mW (see OUT K V dissipation note 1) O Ambient tem- Operating Topr –40°C to 75°C Unless otherwise specified, the perature Storage Tstg –40°C to 85°C A G tolerances are as shown below. Soldering temperature Tsol 260°C Dimensions Tolerance (see note 2) Terminal No. Name A Anode 3 mm max. ±0.3 Note: 1. Refer to the temperature rating chart if the ambient temper- K Cathode ature exceeds 25°C. 3 < mm ≤ 6 ±0.375 2. Complete soldering within 10 seconds. V Power supply 6 < mm ≤ 10 ±0.45 (Vcc) 10 < mm ≤ 18 ±0.55 O Output (OUT) 18 < mm ≤ 30 ±0.65 G Ground (GND) ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 20 mA F F Reverse current I 0.01 μA typ., 10 μA max. V = 4 V R R Peak emission wave- λ 940 nm typ. I = 20 mA P F length Detector Low-level output volt- V 0.12 V typ., 0.4 V max. V = 4.5 to 16 V, I = 16 mA, I = 0 mA (EE-SX3081), OL CC OL F age I = 8 mA (EE-SX4081) F High-level output volt- V 15 V min. V = 16 V, R = 1 kΩ, I = 8 mA (EE-SX3081), OH CC L F age I = 0 mA (EE-SX4081) F Current consumption I 3.2 mA typ., 10 mA max. V = 16 V CC CC Peak spectral sensitivi- λ 870 nm typ. V = 4.5 to 16 V P CC ty wavelength LED current when output is OFF I 8 mA max. V = 4.5 to 16 V FT CC LED current when output is ON Hysteresis ΔH 15% typ. V = 4.5 to 16 V (see note 1) CC Response frequency f 3 kHz min. V = 4.5 to 16 V, I = 20 mA, I = 16 mA (see note 2) CC F OL Response delay time t (t )3 μs typ. V = 4.5 to 16 V, I = 20 mA, I = 16 mA (see note 3) PLH PHL CC F OL Response delay time t (t ) 20 μs typ. V = 4.5 to 16 V, I = 20 mA, I = 16 mA (see note 3) PHL PLH CC F OL 122 EE-SX3081/-SX4081 Photomicrosensor (Transmissive) 3. The following illustrations show the definition of response Note: 1. Hysteresis denotes the difference in forward LED delay time. The value in the parentheses applies to the EE- current value, expressed in percentage, calculated SX4081. from the respective forward LED currents when the photo IC in turned from ON to OFF and when the photo IC in turned from OFF to ON. Input Input Output 2. The value of the response frequency is measured Output by rotating the disk as shown below. 2.1 mm EE-SX3081 EE-SX4081 Disk 0.5 mm 0.5 mm ■ Engineering Data Note: The values in the parentheses apply to the EE-SX4081. Forward Current vs. Collector Forward Current vs. Forward LED Current vs. Supply Voltage Dissipation Temperature Rating Voltage Characteristics (Typical) (Typical) Ta = 25°C R = 1 kΩ L Ta = −30°C Ta = 25°C I OFF (I ON) FT FT Ta = 70°C I ON (I OFF) FT FT Forward voltage V (V) Supply voltage V (V) F CC Ambient temperature Ta (°C) Low-level Output Voltage vs. Am- Low-level Output Voltage vs. LED Current vs. Ambient Temper- bient Temperature Characteristics Output Current (Typical) ature Characteristics (Typical) (Typical) Ta = 25°C V = 5 V CC V = 5 V CC R = 330 Ω V = 5 V L CC I = 0 mA (15 mA) F I = 0 mA (15 mA) F I OFF (I ON) FT FT I = 16 mA OL I ON (I OFF) FT FT I = 5 mA OL Ambient temperature Ta (°C) Ambient temperature Ta (°C) Output current I (mA) C Current Consumption vs. Supply Response Delay Time vs. Forward Repeat Sensing Position Voltage (Typical) Current (Typical) Characteristics (Typical) VCC = 5 V Ta = 25°C Ta = 25°C R = 330 Ω I = 0 mA (15 mA) L I = 15 mA F F Ta = 25°C V = 5 V CC R = 330 Ω L V OUT n = repeat 20 times (EE-SX3@@) V OUT d = 0.01 mm 1 (EE-SX4@@) Center of optical axis Supply voltage V (V) CC Forward current I (mA) Distance d (mm) F EE-SX3081/-SX4081 Photomicrosensor (Transmissive) 123 LED current I (mA) FT Forward current I (mA) Current consumption Icc (mA) F Output allowable dissipation P (mW) C Low level output voltage V (V) OL Forward current I (mA) Response delay time t , t (μs) F PHL PLH Output transistor LED current I (mA) Low level output voltage V (V) FT OL Photomicrosensor (Transmissive) EE-SX3088/-SX4088 Be sure to read Precautions on page 25. ■ Dimensions ■ Features Incorporates an IC chip with a built-in detector element and ampli- Note: All units are in millimeters unless otherwise indicated. fier. 25±0.2A wide supply voltage range: 4.5 to 16 VDC Two, R1 19±0.15 Directly connects with C-MOS and TTL. High resolution with a 0.5-mm-wide sensing aperture. Dark ON model (EE-SX3088) Two, 3.2±0.2 dia. holesLight ON model (EE-SX4088) Four, C0.3 Two, C2 OMRON’s XK8-series Connectors can be connected to the lead wires without a PCB. Contact your OMRON representative for infor- 0.5±0.1 0.5±0.1 mation on obtaining XK8-series Connectors. Optical axis ■ Absolute Maximum Ratings (Ta = 25°C) 8.4±0.1 Item Symbol Rated value Four, 0.25 Emitter Forward current I 50 mA F 3.5±0.4 Four, 0.5 (see note 1) Cross section BB Reverse voltage V 4 V Cross section AA R Detector Power supply volt- V 16 V CC age Output voltage V 28 V OUT Internal Circuit Output current I 16 mA OUT K V Permissible output P 250 mW (see OUT O dissipation note 1) Unless otherwise specified, the A G tolerances are as shown below. Ambient tem- Operating Topr –40°C to 75°C perature Storage Tstg –40°C to 85°C Dimensions Tolerance Terminal No. Name Soldering temperature Tsol 260°C A Anode 3 mm max. ±0.3 (see note 2) K Cathode 3 < mm ≤ 6 ±0.375 Note: 1. Refer to the temperature rating chart if the ambient temper- V Power supply 6 < mm ≤ 10 ±0.45 ature exceeds 25°C. (Vcc) 10 < mm ≤ 18 ±0.55 2. Complete soldering within 10 seconds. O Output (OUT) G Ground (GND) 18 < mm ≤ 30 ±0.65 ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 20 mA F F Reverse current I 0.01 μA typ., 10 μA max. V = 4 V R R Peak emission wave- λ 940 nm I = 20 mA P F length Detector Low-level output volt- V 0.12 V typ., 0.4 V max. V = 4.5 to 16 V, I = 16 mA, I = 0 mA (EE-SX3088), OL CC OL F age I = 5 mA (EE-SX4088) F High-level output volt- V 15 V min. V = 16 V, R = 1 kΩ, I = 5 mA (EE-SX3088), OH CC L F age I = 0 mA (EE-SX4088) F Current consumption I 3.2 mA typ., 10 mA max. V = 16 V CC CC Peak spectral sensitivi- λ 870 nm V = 4.5 to 16 V P CC ty wavelength LED current when output is OFF I 2 mA typ., 5 mA max. V = 4.5 to 16 V FT CC LED current when output is ON Hysteresis ΔH 15% typ. V = 4.5 to 16 V (see note 1) CC Response frequency f 3kHz min. V = 4.5 to 16 V, I = 15 mA, I = 16 mA (see note 2) CC F OL Response delay time t (t )3 μs typ. V = 4.5 to 16 V, I = 15 mA, I = 16 mA (see note 3) PLH PHL CC F OL Response delay time t (t ) 20 μs typ. V = 4.5 to 16 V, I = 15 mA, I = 16 mA (see note 3) PHL PLH CC F OL 124 EE-SX3088/-SX4088 Photomicrosensor (Transmissive) 3. The following illustrations show the definition of response Note: 1. Hysteresis denotes the difference in forward LED delay time. The value in the parentheses applies to the EE- current value, expressed in percentage, calculated SX4088. from the respective forward LED currents when the photo IC in turned from ON to OFF and when the photo IC in turned from OFF to ON. Input Input 2. The value of the response frequency is measured Output by rotating the disk as shown below. Output 2.1 mm EE-SX3088 EE-SX4088 Disk 0.5 mm 0.5 mm ■ Engineering Data Note: The values in the parentheses apply to the EE-SX4088. Forward Current vs. Collector Forward Current vs. Forward LED Current vs. Supply Voltage Dissipation Temperature Rating Voltage Characteristics (Typical) (Typical) Ta = 25°C R = 1 kΩ L Ta = −30°C Ta = 25°C I OFF (I ON) FT FT Ta = 70°C I ON (I OFF) FT FT Forward voltage V (V) Supply voltage V (V) F CC Ambient temperature Ta (°C) Low-level Output Voltage vs. Am- Low-level Output Voltage vs. LED Current vs. Ambient Temper- bient Temperature Characteristics Output Current (Typical) ature Characteristics (Typical) (Typical) Ta = 25°C V = 5 V CC V = 5 V CC R = 330 Ω V = 5 V L CC I = 0 mA (15 mA) F I = 0 mA (15 mA) F I OFF (I ON) FT FT I = 16 mA OL I ON (I OFF) FT FT I = 5 mA OL Ambient temperature Ta (°C) Ambient temperature Ta (°C) Output current I (mA) C Current Consumption vs. Supply Response Delay Time vs. Forward Repeat Sensing Position Voltage (Typical) Current (Typical) Characteristics (Typical) VCC = 5 V Ta = 25°C Ta = 25°C R = 330 Ω I = 0 mA (15 mA) L I = 15 mA F F Ta = 25°C V = 5 V CC R = 330 Ω L V OUT n = repeat 20 times (EE-SX3@@) V OUT d = 0.01 mm 1 (EE-SX4@@) Center of optical axis Supply voltage V (V) CC Forward current I (mA) Distance d (mm) F EE-SX3088/-SX4088 Photomicrosensor (Transmissive) 125 LED current I (mA) FT Forward current I (mA) Current consumption Icc (mA) F Output allowable dissipation P (mW) C Low level output voltage V (V) OL Forward current I (mA) Response delay time t , t (μs) F PHL PLH Output transistor Low level output voltage V (V) OL LED current I (mA) FT Photo IC Output Photomicrosensor (Transmissive) EE-SX3148-P1 Be sure to read Precautions on page 25. ■ Dimensions ■ Features A boss on one side enables securing the Sensor with one M2 or M3 Note: All units are in millimeters unless otherwise indicated. screw. 26±0.2Sensor can be installed from either top of bottom of mounting plate. 2.5 20.5±0.1 High resolution both vertically and horizontally (slot dimensions: 0.5 Four, R0.5 x 0.5 mm) 6.4±0.13.6-mm-wide slot. Photo-IC output connects directly to CMOS and TTL devices. 2.6 0 Two, 1.8 dia. -0.1 3.2±0.2 dia.Applicable to the ZH and ZR Connector Series from JST (Japan 7.7±0.2 Solderless Terminal). 11.3±0.2 16.4±0.2 ■ Absolute Maximum Ratings (Ta = 25°C) (13.8) (3.6) 0.5±0.1 Item Symbol Rated value Power supply voltage V 6 VDC CC 2.9±0.2 Optical axis Output voltage V 28 V 7.5±0.2 Two, C0.3 OUT 0.5±0.1 Output current I 16 mA OUT 2.5 1.5 Permissible output dissipation P 250 mW (see OUT 1.5 note) 3.5 Ambient Operating Topr –20°C to 75°C (2) 2.6 Japan Solderless temperature Storage Tstg –40°C to 85°C Terminal (JST) 16.4±0.2 B3B-ZR Soldering temperature Tsol --- Unless otherwise specified, the Note: Refer to the temperature rating chart if the ambient tempera- tolerances are as shown below. ture exceeds 25°C. 1 2 3 Dimensions Tolerance 3 mm max. ±0.200 Terminal No. Name 3 < mm ≤ 6 ±0.240 1 Power supply 6 < mm ≤ 10 ±0.290 (Vcc) 10 < mm ≤ 18 ±0.350 2 Output (OUT) 3 Ground (GND) 18 < mm ≤ 30 ±0.420 Recommended Mating Connectors: JST (Japan Solderless Terminal) ZHR-3 Series (crimp connector) 03ZR Series (press-fit connector) ■ Electrical and Optical Characteristics (Ta = 25°C, V = 5 V ±10%) CC Item Symbol Value Condition Current consumption I 30 mA max. With and without incident CC Low-level output voltage V 0.3 V max. I = 16 mA OL OUT without incident High-level output voltage V (V x 0.9) V min. V = V with incident OH CC OUT CC R = 47 kΩ L Response frequency f3 kHz min. V = V , R = 47 kΩ (see note) OUT CC L Note: The value of the response frequency is measured by rotating the disk as shown below. Disk 2.1 mm 0.5 mm 0.5 mm 126 EE-SX3148-P1 Photo IC Output Photomicrosensor (Transmissive) ■ Engineering Data Output Allowable Dissipation vs. Sensing Position Characteristics Sensing Position Characteristics Ambient Temperature Characteristics (Typical) (Typical) 300 V = 5 V V = 5 V CC CC d = 0±0.3 mm d = 0±0.3mm 1 2 Ta = 25°C Ta = 25°C R = 47 kΩ R = 47 kΩ 250 L L ON ON 200 (OFF) d1 (OFF) d2 (Center of axis) (Center of axis) 150 d d 100 50 OFF OFF (ON) (ON) 0 -40 -20 0 20 40 60 80 100 -3 -2 -1 0 1 2 3 -3 -2 -1 0123 Distance d (mm) Distance d (mm) Ambient temperature Ta (°C) EE-SX3148-P1 Photo IC Output Photomicrosensor (Transmissive) 127 Output allowable dissipation Pout (mW) Output transistor Light interrupting plate Output transistor Photomicrosensor (Transmissive) EE-SX384/-SX484 Be sure to read Precautions on page 25. ■ Dimensions ■ Features Incorporates an IC chip with a built-in detector element and ampli- Note: All units are in millimeters unless otherwise indicated. fier. Incorporates a detector element with a built-in temperature com- pensation circuit. A wide supply voltage range: 4.5 to 16 VDC Directly connects with C-MOS and TTL. 0.5 0.5High resolution with a 0.5-mm-wide sensing aperture. Dark ON model (EE-SX384) Light ON model (EE-SX484) 5.5 5.5 8 ■ Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rated value 7 min. Five, 0.5 Emitter Forward current I 50 mA F Five, 0.25 (see note 1) 2.5 1.25 1.25 Reverse voltage V 4 V R Cross section AA Cross section BB Detector Power supply volt- V 16 V CC age Output voltage V 28 V OUT Output current I 16 mA OUT Internal Circuit Permissible output P 250 mW (see OUT K V dissipation note 1) 0 Ambient tem- Operating Topr –40°C to 75°C perature Storage Tstg –40°C to 85°C A G Soldering temperature Tsol 260°C (see note 2) Terminal No. Name A Anode Note: 1. Refer to the temperature rating chart if the ambient temper- K Cathode ature exceeds 25°C. 2. Complete soldering within 10 seconds. V Power supply Unless otherwise specified, (Vcc) the tolerances are ±0.2 mm. O Output (OUT) G Ground (GND) ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 20 mA F F Reverse current I 0.01 μA typ., 10 μA max. V = 4 V R R Peak emission wave- λ 940 nm typ. I = 20 mA P F length Detector Low-level output volt- V 0.12 V typ., 0.4 V max. V = 4.5 to 16 V, I = 16 mA, I = 0 mA (EE-SX384), OL CC OL F age I = 8 mA (EE-SX484) F High-level output volt- V 15 V min. V = 16 V, R = 1 kΩ, I = 8 mA (EE-SX384), I = 0 mA OH CC L F F age (EE-SX484) Current consumption I 3.2 mA typ., 10 mA max. V = 16 V CC CC Peak spectral sensitivi- λ 870 nm typ. V = 4.5 to 16 V P CC ty wavelength LED current when output is OFF I 3 mA typ., 8 mA max. V = 4.5 to 16 V FT CC LED current when output is ON Hysteresis ΔH 15% typ. V = 4.5 to 16 V (see note 1) CC Response frequency f 3 kHz min. V = 4.5 to 16 V, I = 15 mA, I = 16 mA (see note 2) CC F OL Response delay time t (t )3 μs typ. V = 4.5 to 16 V, I = 15 mA, I = 16 mA (see note 3) PLH PHL CC F OL Response delay time t (t ) 20 μs typ. V = 4.5 to 16 V, I = 15 mA, I = 16 mA (see note 3) PHL PLH CC F OL 128 EE-SX384/-SX484 Photomicrosensor (Transmissive) 3. The following illustrations show the definition of response Note: 1. Hysteresis denotes the difference in forward LED delay time. The value in the parentheses applies to the EE- current value, expressed in percentage, calculated SX484. from the respective forward LED currents when the photo IC in turned from ON to OFF and when the photo IC in turned from OFF to ON. Input Input 2. The value of the response frequency is measured Output by rotating the disk as shown below. Output 2.1 mm EE-SX384 EE-SX484 Disk 0.5 mm 0.5 mm ■ Engineering Data Note: The values in the parentheses apply to the EE-SX484. Forward Current vs. Collector Forward Current vs. Forward LED Current vs. Supply Voltage Dissipation Temperature Rating Voltage Characteristics (Typical) (Typical) Ta = 25°C R = 1 kΩ L Ta = −30°C Ta = 25°C I OFF (I ON) FT FT Ta = 70°C I ON (I OFF) FT FT Ambient temperature Ta (°C) Forward voltage V (V) Supply voltage V (V) F CC Low-level Output Voltage vs. Low-level Output Voltage vs. Am- LED Current vs. Ambient Temper- Output Current (Typical) bient Temperature Characteristics ature Characteristics (Typical) (Typical) V = 5 V Ta = 25°C CC V = 5 V CC R = 330 Ω L V = 5 V CC I = 0 mA (15 mA) F I = 0 mA (15 mA) F I OFF (I ON) FT FT I = 16 mA OL I ON (I OFF) FT FT I = 5 mA OL Ambient temperature Ta (°C) Ambient temperature Ta (°C) Output current I (mA) C Current Consumption vs. Supply Response Delay Time vs. Forward Repeat Sensing Position Voltage (Typical) Current (Typical) Characteristics (Typical) VCC = 5 V Ta = 25°C Ta = 25°C R = 330 Ω I = 15 mA I = 0 mA (15 mA) L F F Ta = 25°C V = 5 V CC R = 330 Ω L V OUT n = repeat 20 times (EE-SX3@@) V OUT d = 0.01 mm 1 (EE-SX4@@) Center of optical axis Supply voltage V (V) Forward current I (mA) Distance d (mm) CC F EE-SX384/-SX484 Photomicrosensor (Transmissive) 129 Current consumption Icc (mA) Forward current I (mA) LED current I (mA) F FT Output allowable dissipation P (mW) C Low level output voltage V (V) OL Response delay time t , t (μs) PHL PLH Forward current I (mA) F Output transistor Low level output voltage V (V) OL LED current I (mA) FT Photomicrosensor (Transmissive) EE-SX493 Be sure to read Precautions on page 25. ■ Dimensions ■ Features Incorporates an IC chip with a built-in detector element and ampli- Note: All units are in millimeters unless otherwise indicated. fier. Incorporates a detector element with a built-in temperature com- pensation circuit. A wide supply voltage range: 4.5 to 16 VDC 6 Directly connects with C-MOS and TTL. Allows highly precise sensing with a 0.2-mm-wide sensing aper- ture. 0.2 ■ Absolute Maximum Ratings (Ta = 25°C) 9.5 6.5±0.05 Item Symbol Rated value Emitter Forward current I 50 mA 6.9±0.5 F Pull-off taper: (see note 1) 1/25 Five, 0.5 max. Five, 0.25 Reverse voltage V 4 V R (1.25) (1.25) 0.75±0.1 Detector Power supply volt- V 16 V CC Cross section AA age Cross section BB Output voltage V 28 V OUT Output current I 16 mA 0 OUT Two, 1 −0.2 dia. (Tip dimension) 7±0.1 Internal Circuit Permissible output P 250 mW (see OUT dissipation note 1) K V O Ambient tem- Operating Topr –40°C to 60°C perature Unless otherwise specified, the Storage Tstg –40°C to 85°C A G tolerances are as shown below. Soldering temperature Tsol 260°C Terminal No. Name Dimensions Tolerance (see note 2) A Anode 3 mm max. ±0.125 Note: 1. Refer to the temperature rating chart if the ambient temper- K Cathode 3 < mm ≤ 6 ±0.150 ature exceeds 25°C. V Power supply 2. Complete soldering within 10 seconds. 6 < mm ≤ 10 ±0.180 (Vcc) 10 < mm ≤ 18 ±0.215 O Output (OUT) 18 < mm ≤ 30 ±0.260 G Ground (GND) ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 20 mA F F Reverse current I 0.01 μA typ., 10 μA max. V = 4 V R R Peak emission wavelength λ 940 nm typ. I = 20 mA P F Detector Low-level output voltage V 0.12 V typ., 0.4 V max. V = 4.5 to 16 V, I = 16 mA, I = 15 mA OL CC OL F High-level output voltage V 15 V min. V = 16 V, R = 1 kΩ, I = 0 mA OH CC L F Current consumption I 5 mA typ., 10 mA max. V = 16 V CC CC Peak spectral sensitivity λ 870 nm typ. V = 4.5 to 16 V P CC wavelength LED current when output is OFF I 10 mA typ., 15 mA max. V = 4.5 to 16 V FT CC LED current when output is ON Hysteresis ΔH 15% typ. V = 4.5 to 16 V (see note 1) CC Response frequency f 3 kHz min. V = 4.5 to 16 V, I = 15 mA, I = 16 mA (see note 2) CC F OL Response delay time t (t )3 μs typ. V = 4.5 to 16 V, I = 15 mA, I = 16 mA (see note 3) PLH PHL CC F OL Response delay time t (t ) 20 μs typ. V = 4.5 to 16 V, I = 15 mA, I = 16 mA (see note 3) PHL PLH CC F OL 130 EE-SX493 Photomicrosensor (Transmissive) 3. The following illustrations show the definition of response Note: 1. Hysteresis denotes the difference in forward LED delay time. current value, expressed in percentage, calculated from the respective forward LED currents when the photo IC in turned from ON to OFF and when the Input photo IC in turned from OFF to ON. 2. The value of the response frequency is measured by rotating the disk as shown below. Output 2.1 mm 0.2 mm 0.2 mm Disk ■ Engineering Data Forward Current vs. Collector Forward Current vs. Forward LED Current vs. Supply Voltage Dissipation Temperature Rating Voltage Characteristics (Typical) (Typical) Ta = 25°C R = 1 kΩ L I ON FT Ta = −30°C Ta = 25°C Ta = 70°C I OFF FT Ambient temperature Ta (°C) Supply voltage V (V) Forward voltage V (V) CC F Low-level Output Voltage vs. Am- Low-level Output Voltage vs. LED Current vs. Ambient Temper- bient Temperature Characteristics Output Current (Typical) ature Characteristics (Typical) (Typical) V = 5 V CC Ta = 25°C V = 5 V CC R = 330 Ω L V = 5 V CC I = 15 mA F I ON FT I = 15 mA F I OFF I = 16 mA FT OL I = 5 mA OL Ambient temperature Ta (°C) Ambient temperature Ta (°C) Output current I (mA) C Current Consumption vs. Supply Response Delay Time vs. Forward Repeat Sensing Position Voltage (Typical) Current (Typical) Characteristics (Typical) 40 VCC = 5 V Ta = 25°C Ta = 25°C R = 330 Ω 35 L I = 15 mA I = 15 mA F F IF V = 5 V CC t R = 330 Ω 30 L VOUT n = repeat 20 times (EE-SX4@@) t tPHL tPLH 25 d = 0.01 mm 1 20 tPHL (tPLH) 15 IF ICC VCC RL OUT 10 VOUT GND 5 tPLH (tPHL) 0 04 5 1015 20 2530350 Supply voltage V (V) Distance d (mm) CC Forward current I (mA) F EE-SX493 Photomicrosensor (Transmissive) 131 Current consumption Icc (mA) Forward current I (mA) LED current I (mA) F FT Output allowable dissipation P (mW) C Low level output voltage V (V) OL Response delay time t , t (μs) PHL PLH Forward current I (mA) F Output transistor Low level output voltage V (V) OL LED current I (mA) FT Photomicrosensor (Transmissive) EE-SX398/498 Be sure to read Precautions on page 25. ■ Dimensions ■ Features Incorporates an IC chip with a built-in detector element and ampli- Note: All units are in millimeters unless otherwise indicated. fier. 12.2±0.3Incorporates a detector element with a built-in temperature com- pensation circuit. A wide supply voltage range: 4.5 to 16 VDC Directly connects with C-MOS and TTL. Four, C0.3High resolution with a 0.5-mm-wide sensing aperture. Two, C1±0.3 0.5±0.1 Dark ON model (EE-SX398) Light ON model (EE-SX498) Optical axis 10±0.2 8.5±0.5 ■ Absolute Maximum Ratings (Ta = 25°C) 6.5±0.1 Item Symbol Rated value Emitter Forward current I 50 mA F 6.2±0.5 8.2±0.5 (see note 1) Five, 0.5±0.1 Reverse voltage V 4 V R Five, 0.25±0.1 (2.5) (9.2) Detector Power supply volt- V 16 V CC Cross section BB age Cross section AA Output voltage V 28 V OUT Output current I 16 mA OUT Internal Circuit Permissible output P 250 mW (see OUT K V dissipation note 1) O Ambient tem- Operating Topr –40°C to 75°C Unless otherwise specified, the perature Storage Tstg –40°C to 85°C A G tolerances are as shown below. Soldering temperature Tsol 260°C Dimensions Tolerance Terminal No. Name (see note 2) A Anode 3 mm max. ±0.3 Note: 1. Refer to the temperature rating chart if the ambient temper- K Cathode ature exceeds 25°C. 3 < mm ≤ 6 ±0.375 2. Complete soldering within 10 seconds. V Power supply 6 < mm ≤ 10 ±0.45 (Vcc) 10 < mm ≤ 18 ±0.55 O Output (OUT) G Ground (GND) 18 < mm ≤ 30 ±0.65 ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 20 mA F F Reverse current I 0.01 μA typ., 10 μA max. V = 4 V R R Peak emission wave- λ 940 nm typ. I = 20 mA P F length Detector Low-level output volt- V 0.12 V typ., 0.4 V max. V = 4.5 to 16 V, I = 16 mA, I = 0 mA (EE-SX398), OL CC OL F age I = 5 mA (EE-SX498) F High-level output volt- V 15 V min. V = 16 V, R = 1 kΩ, I = 5 mA (EE-SX398), I = 0 mA OH CC L F F age (EE-SX498) Current consumption I 3.2 mA typ., 10 mA max. V = 16 V CC CC Peak spectral sensitivi- λ 870 nm typ. V = 4.5 to 16 V P CC ty wavelength LED current when output is OFF I 2 mA typ., 5 mA max. V = 4.5 to 16 V FT CC LED current when output is ON Hysteresis ΔH 15% typ. V = 4.5 to 16 V (see note 1) CC Response frequency f 3 kHz min. V = 4.5 to 16 V, I = 15 mA, I = 16 mA (see note 2) CC F OL Response delay time t (t )3 μs typ. V = 4.5 to 16 V, I = 15 mA, I = 16 mA (see note 3) PLH PHL CC F OL Response delay time t (t ) 20 μs typ. V = 4.5 to 16 V, I = 15 mA, I = 16 mA (see note 3) PHL PLH CC F OL 132 EE-SX398/498 Photomicrosensor (Transmissive) 3. The following illustrations show the definition of response Note: 1. Hysteresis denotes the difference in forward LED delay time. The value in the parentheses applies to the EE- current value, expressed in percentage, calculated SX498. from the respective forward LED currents when the photo IC in turned from ON to OFF and when the photo IC in turned from OFF to ON. Input Input Output 2. The value of the response frequency is measured Output by rotating the disk as shown below. 2.1 mm EE-SX398 EE-SX498 Disk 0.5 mm 0.5 mm ■ Engineering Data Note: The values in the parentheses apply to the EE-SX498. Forward Current vs. Collector Forward Current vs. Forward LED Current vs. Supply Voltage Dissipation Temperature Rating Voltage Characteristics (Typical) (Typical) Ta = 25°C R = 1 kΩ L Ta = −30°C I OFF (I ON) FT FT Ta = 25°C Ta = 70°C I ON (I OFF) FT FT Ambient temperature Ta (°C) Forward voltage V (V) Supply voltage V (V) F CC Low-level Output Voltage vs. Low-level Output Voltage vs. Am- LED Current vs. Ambient Temper- Output Current (Typical) bient Temperature Characteristics ature Characteristics (Typical) (Typical) V = 5 V Ta = 25°C CC V = 5 V CC R = 330 Ω L V = 5 V CC I = 0 mA (15 mA) F I = 0 mA (15 mA) F I OFF (I ON) FT FT I = 16 mA OL I ON (I OFF) FT FT I = 5 mA OL Ambient temperature Ta (°C) Output current I (mA) C Ambient temperature Ta (°C) Current Consumption vs. Supply Response Delay Time vs. Forward Repeat Sensing Position Voltage (Typical) Current (Typical) Characteristics (Typical) Ta = 25°C VCC = 5 V Ta = 25°C I = 15 mA F R = 330 Ω I = 0 mA (15 mA) L F V = 5 V CC Ta = 25°C R = 330 Ω L V OUT n = repeat 20 times (EE-SX3@@) V OUT d = 0.01 mm 1 (EE-SX4@@) Center of optical axis Distance d (mm) Supply voltage V (V) Forward current I (mA) CC F EE-SX398/498 Photomicrosensor (Transmissive) 133 Current consumption Icc (mA) Forward current I (mA) LED current I (mA) F FT Output allowable dissipation P (mW) C Low level output voltage V (V) OL Response delay time t , t (μs) PHL PLH Forward current I (mA) F Output transistor Low level output voltage V (V) OL LED current I (mA) FT Photomicrosensor (Transmissive) EE-SX3009-P1/-SX4009-P1 Be sure to read Precautions on page 25. ■ Dimensions ■ Features Screw-mounting model. Note: All units are in millimeters unless otherwise indicated. High resolution with a 0.5-mm-wide sensing aperture. 34 171825-3With a 5-mm-wide groove. (Tyco Electronics AMP) 23±0.2 Photo IC output signals directly connect with C-MOS and TTL. Connects to Tyco Electronics AMP’s EI-series connectors. ■ Absolute Maximum Ratings (Ta = 25°C) 4.2±0.2 dia. hole Item Symbol Rated value 3±0.1 dia, depth: 2 Power supply voltage V 10 V Two, R1 CC 0.5 (Aperture width) Optical Output voltage V 28 V OUT axis Output current I 16 mA OUT 10.5 Permissible output dissipation P 250 mW (see OUT note) 7.5 Ambient temper- Operating Topr –25°C to 75°C ature Storage Tstg –40°C to 85°C Soldering temperature Tsol --- 0 4 −0.1 dia. Note: Refer to the temperature rating chart if the ambient tempera- ture exceeds 25°C. Internal Circuit V O Unless otherwise specified, the G tolerances are as shown below. Terminal No. Name Dimensions Tolerance V Power supply 4 mm max. ±0.2 (Vcc) 4 < mm ≤ 16 ±0.3 O Output (OUT) 16 < mm ≤ 63 ±0.5 G Ground (GND) Recommended Mating Connectors: Tyco Electronics AMP 171822-3 (crimp connector) 172142-3 (crimp connector) OMRON EE-1005 (with harness) ■ Electrical and Optical Characteristics (Ta = 25°C, Vcc = 5 V ±10%) Item Symbol Value Condition Current consumption I 30 mA max. With and without incident CC Low-level output voltage V 0.3 V max. I = 16 mA OL OUT Without incident (EE-SX3009-P1) With incident (EE-SX4009-P1) High-level output voltage V (V x 0.9) V min. V = V OH CC OUT CC With incident (EE-SX3009-P1) Without incident (EE-SX4009-P1), R = 47 kΩ L Response frequency f3 kHz min. V = V , R = 47 kΩ (see note) OUT CC L Note: The value of the response frequency is measured by rotating the disk as shown below. Disk 2.1 mm 0.5 mm 0.5 mm t = 0.2 mm 134 EE-SX3009-P1/-SX4009-P1 Photomicrosensor (Transmissive) ■ Engineering Data Note: The values in the parentheses apply to the EE-SX4009-P1. Output Allowable Dissipation vs. Sensing Position Characteristics Ambient Temperature Characteristics (Typical) d = 0±0.3 mm V = 5 V, Ta = 25°C 1 CC R = 47 kΩ L ON (OFF) Center of optical axis OFF (ON) Ambient temperature Ta (°C) Distance d (mm) EE-1005 Connector 1,000±20 (1) (2) (3) Wiring No. Name Model Quantity Maker 1 Receptacle housing 171822-3 1 Tyco Elec- Connector Lead wire Output when connected tronics circuit no. color to EE-SX4009-P1/EE-SX3009-P1 AMP 1Red V CC 2 Receptacle contact 170262-1 3 Tyco Elec- 2 Orange GND tronics AMP 3Yellow OUT 3 Lead wire UL1007 AWG24 3 --- EE-SX3009-P1/-SX4009-P1 Photomicrosensor (Transmissive) 135 Output allowable dissipation Pc (mW) Output transistor Light interrupting plate Photomicrosensor (Transmissive) EE-SX4134 Be sure to read Precautions on page 25. ■ Dimensions ■ Features Ultra-compact model. Note: All units are in millimeters unless otherwise indicated. Photo IC output model. Operates at a V of 2.2 to 7 V. CC PCB surface mounting type. ■ Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rated value Emitter Forward current I 25 mA (see note 1) F Reverse voltage V 5 V R Detector Supply voltage V 9 V CC Output voltage V 17 V OUT Output current I 8 mA OUT Permissible output P 80 mW (see note 1) OUT Optical axis dissipation Ambient Operating Topr –25°C to 85°C Internal Circuit temperature Storage Tstg –40°C to 90°C A V O Reflow soldering Tsol 255°C (see note 2) Unless otherwise specified, the Manual soldering Tsol 350°C (see note 2) K G tolerances are ±0.15 mm. Note: 1. Refer to the temperature rating chart if the ambient temper- Terminal No. Name ature exceeds 25°C. A Anode 2. Complete soldering within 10 seconds for reflow soldering and within 3 seconds for manual soldering. K Cathode V Supply voltage (Vcc) O Output (OUT) G Ground (GND) ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.4 V max. I = 20 mA F F Reverse current I 0.01 μA typ., 10 μA max. V = 5 V R R Peak emission wave- λ 940 nm typ. I = 20 mA P F length Detector Power supply voltage V 2.2 V min., 7 V max. --- CC Low-level output voltage V 0.12 V typ., 0.4 V max. Vcc = 2.2 to 7 V, I = 8 mA, I = 7 mA OL OL F High-level output current I 10 μA max. Vcc = 2.2 to 7 V, I = 0 mA, V = 17 V OH F OUT Current consumption I 2.8 mA typ., 4 mA max. Vcc = 7 V CC Peak spectral sensitivity λ 870 mm typ. Vcc = 2.2 to 7 V P wavelength LED current when output is ON I 2.0 mA typ., 3.5 mA max. V = 2.2 to 7 V FT CC Hysteresis ΔH 21% typ. V = 2.2 to 7 V (see note 1) CC Response frequency f3 kHz min. V = 2.2 to 7 V, I = 5 mA, I = 8 mA (see note 2) CC F OL Response delay time t 7 μs typ. V = 2.2 to 7 V, I = 5 mA, I = 8 mA (see note 3) PHL CC F OL Response delay time t 18 μs typ. V = 2.2 to 7 V, I = 5 mA, I = 8 mA (see note 3) PLH CC F OL 136 EE-SX4134 Photomicrosensor (Transmissive) 3. The following illustrations show the definition of response Note: 1. Hysteresis denotes the difference in forward LED delay time. current value, expressed in percentage, calculated from the respective forward LED currents when the photo IC in turned from ON to OFF and when the Input photo IC in turned from OFF to ON. 2. The value of the response frequency is measured by rotating the disk as shown below. Output Disk 2.1 mm 0.5 mm 0.5 mm ■ Engineering Data Forward Current vs. Collector Forward Current vs. Forward LED Current vs. Supply Voltage Dissipation Temperature Rating Voltage Characteristics (Typical) (Typical) Ta = 25°C R = 4.7 kΩ L Ta = −30°C Ta = 25°C Ta = 70°C Supply voltage V (V) CC Forward voltage V (V) Ambient temperature Ta (°C) F Low-level Output Voltage vs. Am- LED Current vs. Ambient Temper- Low-level Output Voltage vs. bient Temperature Characteristics ature Characteristics (Typical) Output Current (Typical) (Typical) V = 5 V Ta = 25°C CC R = 4.7 kΩ V = 5 V L CC V = 5 V CC I = 8 mA I = 7 mA OL F I = 7 mA F I = 8 mA OL I = 0.5 mA OL Output current I (mA) C Ambient temperature Ta (°C) Ambient temperature Ta (°C) Current Consumption vs. Supply Response Delay Time vs. Forward Repeat Sensing Position Voltage (Typical) Current (Typical) Characteristics (Typical) 40 IF ICC Ta = 25°C VCC RL 35 VCC = 5 V Ta = 25°C Ta = 25°C OUT I = 0 mA I = 5 mA F VOUT R = 4.7 kΩ F L V = 5 V GND CC 30 R = 4.7 kΩ L n = repeat 20 times 25 20 tPLH 15 INPUT IF 0.01 t 10 OUTPUT t tPHL tPLH 5 tPHL 0 03 510 15 20 250 Distance d (mm) Supply voltage V (V) CC Forward current I (mA) F EE-SX4134 Photomicrosensor (Transmissive) 137 Current consumption Icc (mA) LED current I (mA) Forward current I (mA) FT F Output allowable dissipation P (mW) C Low level output voltage V (V) Forward current I (mA) OL F Response delay time t , t (μs) PHL PLH Output transistor Low level output voltage V (V) OL LED current I (mA) FT Unit: mm (inch) ■ Tape and Reel Reel 21±0.8 dia. 2±0.5 330±2 dia. 13± 0.5 dia. 80±1 dia. Product name Quantity Lot number +2 12.4 0 18.4 max. Tape 1.5 dia. Tape configuration Terminating part Parts mounted Leading part (40 mm min.) (400 mm min.) Empty Pull-out direction (40 mm min.) Tape quantity 2,000 pcs./reel 138 EE-SX4134 Photomicrosensor (Transmissive) Precautions ■ Soldering Information Reflow soldering The following soldering paste is recommended: Melting temperature: 216 to 220°C Composition: Sn 3.5 Ag 0.75 Cu The recommended thickness of the metal mask for screen printing is between 0.2 and 0.25 mm. Set the reflow oven so that the temperature profile shown in the fol- lowing chart is obtained for the upper surface of the product being soldered. 260°C max. 255°C max. 1 to 5°C/s 230°C max. 150 to 180°C 1 to 5°C/s 10 sec max. 120 sec 40 sec max. Time Manual soldering Use”Sn 60” (60% tin and 40% lead) or solder with silver content. Use a soldering iron of less than 25 W, and keep the temperature of the iron tip at 300°C or below. Solder each point for a maximum of three seconds. After soldering, allow the product to return to room temperature before handling it. Storage To protect the product from the effects of humidity until the package is opened, dry-box storage is recommended. If this is not possible, store the product under the following conditions: Temperature: 10 to 30°C Humidity: 60% max. The product is packed in a humidity-proof envelope. Reflow soldering must be done within 48 hours after opening the envelope, during which time the product must be stored under 30°C at 80% maximum humidity. If it is necessary to store the product after opening the envelope, use dry-box storage or reseal the envelope. Baking If a product has remained packed in a humidity-proof envelope for six months or more, or if more than 48 hours have lapsed since the envelope was opened, bake the product under the following conditions before use: Reel: 60°C for 24 hours or more Bulk: 80°C for 4 hours or more EE-SX4134 Photomicrosensor (Transmissive) 139 Temperature Photomicrosensor (Transmissive) EE-SX4235A-P2 Be sure to read Precautions on page 25. ■ Dimensions ■ Features Snap-in mounting model. Note: All units are in millimeters unless otherwise indicated. Mounts to 1.0-, 1.2- and 1.6-mm-thick panels. 292250-3 Four, R0.5 (Tyco Electronics AMP)High resolution with a 0.5-mm-wide sensing aperture. 7.6±0.2 With a 5-mm-wide slot. Photo IC output signals directly connect with C-MOS and TTL. Connects to Tyco Electronics AMP’s CT-series connectors. ■ Absolute Maximum Ratings (Ta = 25°C) (1.2) 0.5 (Aperture width) Optical Item Symbol Rated value axis Power supply voltage V 7 V (see CC 3.2 note) (Aperture Output voltage V 28 V width) OUT Output current I 16 mA OUT Permissible output dissipation P 250 mW (see OUT note) Ambient temper- Operating Topr –25°C to 75°C Note: The dimension is specified ature by datum A only. Storage Tstg –40°C to 85°C Soldering temperature Tsol --- Internal Circuit Note: Refer to the temperature rating chart if the ambient tempera- Unless otherwise specified, the V ture exceeds 25°C. tolerances are as shown below. O Dimensions Tolerance G 3 mm max. ±0.3 Terminal No. Name 3 < mm ≤ 6 ±0.375 V Power supply 6 < mm ≤ 10 ±0.45 (Vcc) 10 < mm ≤ 18 ±0.55 O Output (OUT) G Ground (GND) 18 < mm ≤ 30 ±0.65 Recommended Mating Connectors: Tyco Electronics AMP 179228-3 (crimp connector) 175778-3 (crimp connector) 173977-3 (press-fit connector) ■ Electrical and Optical Characteristics (Ta = 25°C, V = 5 V ±10%) CC Item Symbol Value Condition Current consumption I 16.5 mA max. With and without incident CC Low-level output voltage V 0.35 V max. I = 16 mA with incident OL OUT High-level output voltage V (V x 0.9) V min. V = V without incident, R = 47 kΩ OH CC OUT CC L Response frequency f3 kHz min. V = V , R = 47 kΩ (see note) OUT CC L Note: The value of the response frequency is measured by rotating the disk as shown below. Disk 2.1 mm 0.5 mm 0.5 mm t = 0.2 mm 140 EE-SX4235A-P2 Photomicrosensor (Transmissive) ■ Engineering Data Output Allowable Dissipation vs. Sensing Position Characteristics Sensing Position Characteristics Ambient Temperature Characteristics (Typical) (Typical) V = 5 V d = 0±1.3 mm CC 2 d = 0±0.3 mm V = 5 V 1 CC Ta = 25°C Ta = 25°C R = 47 kΩ L R = 47 kΩ L d Center of optical axis OFF d2 ON −3 −2 −1 0123 Distance d (mm) Ambient temperature Ta (°C) Distance d (mm) ■ Recommended Mounting Holes 17.1±0.1 (for t =1.0,1.2,1.6) t = 1.0 mm t = 1.2 mm t = 1.6 mm When mounting the Photomicrosensor to a panel with a hole opened by pressing, make sure that the hole has no burrs. The mounting strength of the Photomicrosensor will decrease if the hole has burrs. When mounting the Photomicrosensor to a panel with a hole opened by pressing, be sure to mount the Photomicrosensor on the pressing side of the panel. The mounting strength of the Photomicrosensor will increase if the Photomicrosensor is mounted to a panel with a hole that is only a little larger than the size of the Photomicrosensor, in which case, however, it will be difficult to mount the Photomicrosensor to the panel. The mounting strength of the Photomicrosensor will decrease if the Photomicrosensor is mounted to a panel with a hole that is comparatively larger than the size of the Photomicrosensor, in which case, however, it will be easy to mount the Photomicrosensor to the panel. When mounting the Photomi- crosensor to a panel, open an appropriate hole for the Photomicrosensor according to the application. After mounting the Photomicrosensor to any panel, make sure that the Photomicrosensor does not wobble. When mounting the Photomicrosensor to a molding with a hole, make sure that the edges of the hole are sharp enough, otherwise the Photomi- crosensor may fall out. EE-SX4235A-P2 Photomicrosensor (Transmissive) 141 Output allowable dissipation Pc (mW) 3.7±0.1 Output transistor Light interrupting plate Output transistor Center of optical axis Photomicrosensor (Transmissive) EE-SX3239-P2 Be sure to read Precautions on page 25. ■ Dimensions ■ Features Snap-in mounting model. Note: All units are in millimeters unless otherwise indicated. Mounts to 1.0-, 1.2- and 1.6-mm-thick panels. Post header High resolution with a 0.5-mm-wide sensing aperture. 292250-3 (Tyco Electronics AMP) With a 5-mm-wide slot. Photo IC output signals directly connect with C-MOS and TTL. Connects to Tyco Electronics AMP’s CT-series connectors. (2.4), Aperture width ■ Absolute Maximum Ratings (Ta = 25°C) 0.5, Aperture width Item Symbol Rated value Power supply voltage V 7 V CC Output voltage V 28 V OUT Output current I 16 mA OUT Permissible output dissipation P 250 mW (see OUT note) Ambient temper- Operating Topr –20°C to 75°C ature Storage Tstg –40°C to 85°C Soldering temperature Tsol --- Note: The asterisked dimension Note: Refer to the temperature rating chart if the ambient tempera- is specified by datum A ture exceeds 25°C. only. Internal Circuit Unless otherwise specified, the V tolerances are as shown below. O Dimensions Tolerance G 3 mm max. ±0.3 Terminal No. Name 3 < mm ≤ 6 ±0.375 V Power supply 6 < mm ≤ 10 ±0.45 (Vcc) 10 < mm ≤ 18 ±0.55 O Output (OUT) G Ground (GND) 18 < mm ≤ 30 ±0.65 Recommended Mating Connectors: Tyco Electronics AMP 175778-3 (crimp connector) 173977-3 (press-fit connector) 179228-3 (crimp connector) ■ Electrical and Optical Characteristics (Ta = 25°C, V = 5 V ±10%) CC Item Symbol Value Condition Current consumption I 16.5 mA max. With and without incident CC Low-level output voltage V 0.35 V max. I = 16 mA OL OUT without incident (EE-SX3239-P2) High-level output voltage V (V x 0.9) V min. V = V with incident (EE-SX3239-P2), OH CC OUT CC R = 47 kΩ L Response frequency f3 kHz min. V = V , R = 47 kΩ (see note) OUT CC L Note: The value of the response frequency is measured by rotating the disk as shown below. Disk 2.1 mm 0.5 mm 0.5 mm t = 0.2 mm 142 EE-SX3239-P2 Photomicrosensor (Transmissive) ■ Engineering Data Output Allowable Dissipation vs. Sensing Position Characteristics Sensing Position Characteristics Ambient Temperature Characteristics (Typical) (Typical) V = 5 V CC d = 0±0.3 mm d = 0±1.1 mm 1 2 Ta = 25°C V = 5 V CC R = 47 kΩ L Ta = 25°C d R = 47 kΩ L Center of optical axis OFF d2 ON −3 −2 −1 0123 Distance d (mm) Ambient temperature Ta (°C) Distance d (mm) ■ Recommended Mounting Holes When mounting the Photomicrosensor to a panel with a hole opened by pressing, make sure that the hole has no burrs. The mounting strength of the Photomicrosensor will decrease if the hole has burrs. When mounting the Photomicrosensor to a panel with a hole opened by pressing, be sure to mount the Photomicrosensor on the pressing side of the panel. The mounting strength of the Photomicrosensor will increase if the Photomicrosensor is mounted to a panel with a hole that is only a little larger than the size of the Photomicrosensor, in which case, however, it will be difficult to mount the Photomicrosensor to the panel. The mounting strength of the Photomicrosensor will decrease if the Photomicrosensor is mounted to a panel with a hole that is comparatively larger than the size of the Photomicrosensor, in which case, however, it will be easy to mount the Photomicrosensor to the panel. When mounting the Photomi- crosensor to a panel, open an appropriate hole for the Photomicrosensor according to the application. After mounting the Photomicrosensor to any panel, make sure that the Photomicrosensor does not wobble. When mounting the Photomicrosensor to a molding with a hole, make sure that the edges of the hole are sharp enough, otherwise the Photomi- crosensor may fall out. EE-SX3239-P2 Photomicrosensor (Transmissive) 143 Output allowable dissipation Pc (mW) Output transistor Light interrupting plate Output transistor Center of optical axis Photomicrosensor (Transmissive) EE-SX460-P1 Be sure to read Precautions on page 25. ■ Dimensions ■ Features Snap-in mounting model. Note: All units are in millimeters unless otherwise indicated. Mounts to 0.8- to 1.6-mm-thick panels. High resolution (aperture width of 0.5 mm) 171826-3 (Tyco Electronics AMP) With a 5-mm-wide slot. Photo IC output signals directly connect with C-MOS and TTL. Connects to Tyco Electronics AMP’s EI-series connectors. Optical axis ■ Absolute Maximum Ratings (Ta = 25°C) 0.5 (Aperture width) Item Symbol Rated value Power supply voltage V 10 V CC Optical Two, axis R1 Output voltage V 28 V OUT 15±0.2 Output current I 16 mA OUT Permissible output dissipation P 250 mW (see OUT note) Mounting face Ambient temper- Operating Topr –20°C to 75°C ature Storage Tstg –40°C to 85°C Soldering temperature Tsol --- Note: Refer to the temperature rating chart if the ambient tempera- Internal Circuit Unless otherwise specified, the ture exceeds 25°C. V tolerances are as shown below. O Dimensions Tolerance G 3 mm max. ±0.3 Terminal No. Name 3 < mm ≤ 6 ±0.375 V Power supply 6 < mm ≤ 10 ±0.45 (Vcc) 10 < mm ≤ 18 ±0.55 O Output (OUT) G Ground (GND) 18 < mm ≤ 30 ±0.65 Recommended Mating Connectors: Tyco Electronics AMP 171822-3 (crimp connector) 172142-3 (crimp connector) OMRON EE-1005 (with harness) ■ Electrical and Optical Characteristics (Ta = 25°C, V = 5 V±10%) CC Item Symbol Value Condition Current consumption I 30 mA max. With and without incident CC Low-level output voltage V 0.3 V max. I = 16 mA with incident OL OUT High-level output voltage V (V x 0.9) V min. V = V without incident, R = 47 kΩ OH CC OUT CC L Response frequency f3 kHz min. V = V , R = 47 kΩ (see note) OUT CC L Note: The value of the response frequency is measured by rotating the disk as shown below. Disk 2.1 mm 0.5 mm 0.5 mm t = 0.2 mm 144 EE-SX460-P1 Photomicrosensor (Transmissive) ■ Engineering Data Output Allowable Dissipation vs. Sensing Position Characteristics Sensing Position Characteristics Ambient Temperature Characteristics (Typical) (Typical) d = 0±0.3 mm 1 V = 5 V d = 0±1.1 mm CC 2 Ta = 25°C V = 5 V CC R = 47 kΩ L Ta = 25°C d R = 47 kΩ L Center of optical axis OFF d2 ON −3 −2 −1 0123 Distance d (mm) Ambient temperature Ta (°C) Distance d (mm) EE-1005 Connector 1,000±20 (1) (2) (3) Wiring No. Name Model Quantity Maker 1 Receptacle 171822-3 1 Tyco Electronics Connector Lead wire color Output when connected to housing AMP circuit no. EE-SX460-P1 2 Receptacle 170262-1 3 Tyco Electronics 1Red V CC contact AMP 2 Orange OUT 3 Lead wire UL1007 AWG24 3 --- 3Yellow GND ■ Recommended Mounting Hole Dimensions and Mounting and Dismounting Method Dismounting by Hand Squeeze the mounting tabs as shown in the following illustration and Center of sensing press the mounting tabs upwards. slot Optical axis EE-SX460-P1 Sensor edge Sensor edge on (2) connector side The Photomicrosensor can be mounted to 0.8- to 1.6-mm-thick (1) (1) panels. Panel Refer to the above mounting hole dimensions and open the mounting holes in the panel to which the Photomicrosensor will be mounted. Pressed mounting holes are ideal for mounting the Insert into the holes the Photomicrosensor’s mounting portions with Photomicrosensor. When mounting the Photomicrosensor to a panel a force of three to five kilograms but do not press in the that has pressed mounting holes for the Photomicrosensor, be sure Photomicrosensor at one time. The Photomicrosensor can be easily to mount the Photomicrosensor on the pressing side of the panel, mounted by inserting the mounting portions halfway and then slowly otherwise it may be difficult to mount the Photomicrosensor and an pressing the Photomicrosensor onto the panel. insertion force of five to six kilograms may be required. There are two ways to dismount the Photomicrosensor. Refer to the When mounting the Photomicrosensor to a panel that has mounting following. holes opened by pressing, make sure that the mounting holes have no burrs, otherwise the lock mechanism of the Photomicrosensor will not work perfectly. After mounting the Photomicrosensor to a Dismounting with Screwdriver panel, be sure to check if the lock mechanism is working perfectly. Press the mounting hooks of the Photomicrosensor with a flat-blade screwdriver as shown in the following illustration and pull up the EE-SX460-P1 Photomicrosensor. EE-SX460-P1 Flat-blade Flat-blade screwdriver screwdriver (2) (2) (1) (1) Panel This tapered portion must be on the lower side of the panel, other wise the Photomicrosensor will Mounting tab not be locked in. Mounting hook Panel Mounting hook EE-SX460-P1 Photomicrosensor (Transmissive) 145 Output allowable dissipation Pc (mW) Output transistor Light interrupting plate Output transistor Center of optical axis Photomicrosensor (Transmissive) EE-SX461-P11 Be sure to read Precautions on page 25. ■ Dimensions ■ Features Snap-in-mounting model. Note: All units are in millimeters unless otherwise indicated. Mounts to 0.8- to 1.6-mm-thick panels. 171826-3 (Tyco With a 15-mm-wide slot. Electronics AMP) Photo IC output signals directly connect with C-MOS and TTL. Connects to Tyco Electronics AMP’s EI-series connectors. ■ Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rated value Power supply voltage V 7 V CC 2 (Aperture Output voltage V 28 V OUT width) Output current I 16 mA Optical OUT Two, R1 axis Permissible output dissipation P 250 mW (see OUT note) (15) Ambient temper- Operating Topr –20°C to 75°C ature Storage Tstg –40°C to 85°C Soldering temperature Tsol --- Note: Refer to the temperature rating chart if the ambient tempera- ture exceeds 25°C. Internal Circuit Unless otherwise specified, the V tolerances are as shown below. O Dimensions Tolerance G 3 mm max. ±0.3 Terminal No. Name 3 < mm ≤ 6 ±0.375 V Power supply 6 < mm ≤ 10 ±0.45 (Vcc) 10 < mm ≤ 18 ±0.55 O Output (OUT) 18 < mm ≤ 30 ±0.65 G Ground (GND) Recommended Mating Connectors: Tyco Electronics AMP 171822-3 (crimp connector) 172142-3 (crimp connector) OMRON EE-1005 (with harness) ■ Electrical and Optical Characteristics (Ta = 25°C, V = 5 V±10%) CC Item Symbol Value Condition Current consumption I 35 mA max. With and without incident CC Low-level output voltage V 0.3 V max. I = 16 mA with incident OL OUT High-level output voltage V (V x 0.9) V min. V = V without incident, R = 47 kΩ OH CC OUT CC L Response frequency f3 kHz min. V = V , R = 47 kΩ (see note) OUT CC L Note: The value of the response frequency is measured by rotating the disk as shown below. Disk 2.1 mm 0.5 mm 0.5 mm t = 0.2 mm 146 EE-SX461-P11 Photomicrosensor (Transmissive) ■ Engineering Data Output Allowable Dissipation vs. Sensing Position Characteristics Sensing Position Characteristics Ambient Temperature Characteristics (Typical) (Typical) V = 5 V d = 0±1.1 mm CC 2 d = 0±1.1 mm 1 Ta = 25°C R = 47 kΩ V = 5 V L CC Ta = 25°C d R = 47 kΩ L Center of optical axis OFF d2 ON −3 −2 −10 1 2 3 Ambient temperature Ta (°C) Distance d (mm) Distance d (mm) EE-1005 Connector 1,000±20 (1) (2) (3) No. Name Model Quantity Maker Wiring 1 Receptacle 171822-3 1 Tyco Electronics Connector Lead wire color Output when connected to housing AMP circuit no. EE-SX461-P11 2 Receptacle 170262-1 3 Tyco Electronics 1Red V contact AMP CC 3 Lead wire UL1007 AWG24 3 --- 2 Orange OUT 3 Yellow GND ■ Recommended Mounting Hole Dimensions and Mounting and Dismounting Method Dismounting by Hand Squeeze the mounting tabs as shown in the following illustration and press the mounting tabs upwards. Optical axis EE-SX461-P11 Center of Sensor edge Sensor edge sensing (2) (to post header) slot The Photomicrosensor can be mounted to 0.8- to 1.6-mm-thick (1) (1) panels. Panel Refer to the above mounting hole dimensions and open the mounting holes in the panel to which the Photomicrosensor will be mounted. Pressed mounting holes are ideal for mounting the Insert into the holes the Photomicrosensor’s mounting portions with Photomicrosensor. When mounting the Photomicrosensor to a panel a force of three to five kilograms but do not press in the that has pressed mounting holes for the Photomicrosensor, be sure Photomicrosensor at one time. The Photomicrosensor can be easily to mount the Photomicrosensor on the pressing side of the panel, mounted by inserting the mounting portions halfway and then slowly otherwise it may be difficult to mount the Photomicrosensor and an pressing the Photomicrosensor onto the panel. insertion force of five to six kilograms may be required. There are two ways to dismount the Photomicrosensor. Refer to the When mounting the Photomicrosensor to a panel that has mounting following. holes opened by pressing, make sure that the mounting holes have no burrs, otherwise the lock mechanism of the Photomicrosensor Dismounting with Screwdriver will not work perfectly. After mounting the Photomicrosensor to a panel, be sure to check if the lock mechanism is working perfectly. Press the mounting hooks of the Photomicrosensor with a flat-blade screwdriver as shown in the following illustration and pull up the EE-SX461-P11 Photomicrosensor. EE-SX461-P11 Flat-blade Flat-blade screwdriver screwdriver (2) (2) (1) (1) Panel This tapered portion must be on the lower side of the panel, otherwise the Photomicrosensor Mounting tab will not be locked in. Mounting hook Panel Mounting hook EE-SX461-P11 Photomicrosensor (Transmissive) 147 Output allowable dissipation Pc (mW) Output transistor Light interrupting plate Output transistor Center of optical axis Photomicrosensor (Actuator Mounted) EE-SA407-P2 Be sure to read Precautions on page 25. ■ Dimensions ■ Features An actuator can be attached. Note: All units are in millimeters unless otherwise indicated. Snap-in mounting model. Mounts to 1.0-, 1.2- and 1.6-mm-thick panels. High resolution with a 0.5-mm-wide sensing aperture. With a 3.6-mm-wide slot. Photo IC output signals directly connect with logic circuit and TTL. 292250-3 (Tyco Electronics AMP)Connects to Tyco Electronics AMP’s CT-series connectors. +0.1 2.2 0 dia. 0.5 (Aperture width) ■ Absolute Maximum Ratings (Ta = 25°C) Optical axis Item Symbol Rated value Power supply voltage V 7 V CC Output voltage V 28 V OUT Output current I 16 mA OUT Permissible output dissipation P 250 mW (see OUT (see note) note) Ambient temper- Operating Topr –20°C to 75°C ature Storage Tstg –40°C to 85°C Note: The dimension is specified Soldering temperature Tsol --- by datum A only. Internal Circuit Note: Refer to the temperature rating chart if the ambient tempera- Unless otherwise specified, the ture exceeds 25°C. V tolerances are as shown below. 0 Dimensions Tolerance G 3 mm max. ±0.3 Terminal No. Name 3 < mm ≤ 6 ±0.375 V Power supply 6 < mm ≤ 10 ±0.45 (Vcc) 10 < mm ≤ 18 ±0.55 O Output (OUT) 18 < mm ≤ 30 ±0.65 G Ground (GND) Recommended Mating Connectors: Tyco Electronics AMP 179228-3 (crimp connector) 175778-3 (crimp connector) 173977-3 (press-fit connector) ■ Electrical and Optical Characteristics (Ta = 25°C, V = 5 V ±10%) CC Item Symbol Value Condition Current consumption I 30 mA max. With and without incident CC Low-level output voltage V 0.35 V max. I = 16 mA with incident OL OUT High-level output voltage V (V x 0.9) V min. V = V without incident, R = 47 kΩ OH CC OUT CC L Response frequency f3 kHz min. V = V , R = 47 kΩ (see note) OUT CC L Note: The value of the response frequency is measured by rotating the disk as shown below. Disk 2.1 mm 0.5 mm 0.5 mm t = 0.2 mm 148 EE-SA407-P2 Photomicrosensor (Actuator Mounted) ▲ ▲ ■ Engineering Data Output Allowable Dissipation vs. Sensing Position Characteristics Sensing Position Characteristics Ambient Temperature Characteristics (Typical) (Typical) V = 5 V d = 0±1.1 mm CC 2 d = 0±0.3 mm 1 Ta = 25°C R = 47 kΩ V = 5 V L CC d Ta = 25°C R = 47 kΩ L Center of optical axis OFF d2 ON −3 −2 −1 0123 Distance d (mm) Distance d (mm) Ambient temperature Ta (°C) ■ Recommended Mounting Holes 17.1±0.1 (for t =1.0,1.2,1.6) t = 1.0 mm t = 1.2 mm t = 1.6 mm When mounting the Photomicrosensor to a panel with a hole opened by pressing, make sure that the hole has no burrs. The mounting strength of the Photomicrosensor will decrease if the hole has burrs. When mounting the Photomicrosensor to a panel with a hole opened by pressing, be sure to mount the Photomicrosensor on the pressing side of the panel. The mounting strength of the Photomicrosensor will increase if the Photomicrosensor is mounted to a panel with a hole that is only a little larger than the size of the Photomicrosensor, in which case, however, it will be difficult to mount the Photomicrosensor to the panel. The mounting strength of the Photomicrosensor will decrease if the Photomicrosensor is mounted to a panel with a hole that is comparatively larger than the size of the Photomicrosensor, in which case, however, it will be easy to mount the Photomicrosensor to the panel. When mounting the Photomi- crosensor to a panel, open an appropriate hole for the Photomicrosensor according to the application. After mounting the Photomicrosensor to any panel, make sure that the Photomicrosensor does not wobble. When mounting the Photomicrosensor to a molding with a hole, make sure that the edges of the hole are sharp enough, otherwise the Photomi- crosensor may come fall out. Actuator Dimensions 0 3 −0.2dia. 2±0.1 dia. Note: 1. Make sure that the portions marked with dotted lines have no burrs. 2. The material of the actuator must be selected by considering the infrared permeability of the actuator. EE-SA407-P2 Photomicrosensor (Actuator Mounted) 149 Output allowable dissipation Pc (mW) Output transistor Light interrupting plate Output transistor Center of optical axis Photomicrosensor (Reflective) EE-SY110 Be sure to read Precautions on page 25. ■ Dimensions ■ Features Compact reflective model with a molded housing. Note: All units are in millimeters unless otherwise indicated. ■ Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rated value Four, 0.5 Emitter Forward current I 50 mA F (see note 1) Pulse forward cur- I 1 A FP rent (see note 2) Four, R1.5 Reverse voltage V 4 V R Detector Collector–Emitter V 30 V CEO voltage 15.2±0.2 Emitter–Collector V --- ECO voltage Collector current I 20 mA C Collector dissipa- P 100 mW C tion (see note 1) Four, 0.25 Ambient tem- Operating Topr –40°C to 85°C 15 to 18 perature Storage Tstg –40°C to 85°C Soldering temperature Tsol 260°C (see note 3) Internal Circuit Note: 1. Refer to the temperature rating chart if the ambient temper- A C Unless otherwise specified, the ature exceeds 25°C. tolerances are as shown below. 2. The pulse width is 10 μs maximum with a frequency of 100 Hz. K E Dimensions Tolerance 3. Complete soldering within 10 seconds. 3 mm max. ±0.2 Terminal No. Name 3 < mm ≤ 6 ±0.24 A Anode 6 < mm ≤ 10 ±0.29 K Cathode 10 < mm ≤ 18 ±0.35 C Collector E Emitter 18 < mm ≤ 30 ±0.42 ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 30 mA F F Reverse current I 0.01 μA typ., 10 μA max. V = 4 V R R Peak emission wavelength λ 940 nm typ. I = 20 mA P F Detector Light current I 200 μA min., 2,000 μA max. I = 20 mA, V = 10 V L F CE White paper with a reflection ratio of 90%, d = 5 mm (see note) Dark current I 2 nA typ., 200 nA max. V = 10 V, 0 lx D CE Leakage current I 2 μA max. I = 20 mA, V = 10 V with no reflec- LEAK F CE tion Collector–Emitter saturated volt- V (sat) --- --- CE age Peak spectral sensitivity wave- λ 850 nm typ. V = 10 V P CE length Rising time tr 30 μs typ. V = 5 V, R = 1 kΩ, I = 1 mA CC L L Falling time tf 30 μs typ. V = 5 V, R = 1 kΩ, I = 1 mA CC L L Note: The letter “d” indicates the distance between the top surface of the sensor and the sensing object. 150 EE-SY110 Photomicrosensor (Reflective) ■ Engineering Data Forward Current vs. Collector Light Current vs. Forward Current Light Current vs. Collector−Emitter Dissipation Temperature Rating Characteristics (Typical) Voltage Characteristics (Typical) Sensing object: White paper with a reflection factor of 90% d = 5 mm Ta = 25°C V = 10 V CE d = 5 mm I = 40 mA F I = 30 mA F I = 20 mA F I = 10 mA F Ambient temperature Ta (°C) Forward current I (mA) F Collector−Emitter voltage V (V) CE Relative Light Current vs. Dark Current vs. Ambient Response Time vs. Load Ambient Temperature Temperature Characteristics Resistance Characteristics Characteristics (Typical) (Typical) (Typical) Vcc = 5 V V = 10 V CE I = 20 mA F Ta = 25°C 0 x V = 5 V CE Load resistance R (kΩ) L Ambient temperature Ta (°C) Ambient temperature Ta (°C) Sensing Distance Characteristics Sensing Position Characteristics Sensing Angle Characteristics V = 10 V CE (Typical) (Typical) (Typical) I = 20 mA F d = 5 mm Sensing object: Ta = 25°C I = 20 mA F White paper I = 20 mA F V = 10 V CE with a reflection V = 10 V CE Ta = 25°C factor of 90% d = 5 mm 1 Sensing object: White paper with a reflection factor of 90% Sensing object: White paper with a reflection factor of 90% d Direction Distance d (mm) Distance d (mm) Angle deviation θ (°) 2 Response Time Measurement Circuit Input 90 % Output 10 % Input Output EE-SY110 Photomicrosensor (Reflective) 151 Light current I (μA) L Relative light current I (%) Forward current I (mA) L F Collector dissipation Pc (mW) Dark current I (nA) Light current I (mA) D L Relative light current I (%) L Relative light current I (%) Response time tr, tf (μs) L Light current I (mA) L Photomicrosensor (Reflective) EE-SY113 Be sure to read Precautions on page 25. ■ Dimensions ■ Features Compact reflective Photomicrosensor (EE-SY110) with a molded Note: All units are in millimeters unless otherwise indicated. housing and a dust-tight cover. ■ Absolute Maximum Ratings (Ta = 25°C) Four, 0.5 Item Symbol Rated value Emitter Forward current I 50 mA F (see note 1) Notch for directional discrimination Pulse forward cur- I 1 A FP rent (see note 2) Reverse voltage V 4 V R 2.5 Detector Collector–Emitter V 30 V CEO voltage Emitter–Collector V --- ECO voltage Four, 0.25 Collector current I 20 mA C 15 to 18 Collector dissipa- P 100 mW C tion (see note 1) Ambient tem- Operating Topr –40°C to 80°C perature Internal Circuit Storage Tstg –40°C to 85°C Soldering temperature Tsol 260°C A C Unless otherwise specified, the (see note 3) tolerances are as shown below. Note: 1. Refer to the temperature rating chart if the ambient temper- K E Dimensions Tolerance ature exceeds 25°C. 2. The pulse width is 10 μs maximum with a frequency of 3 mm max. ±0.3 100 Hz. Terminal No. Name 3 < mm ≤ 6 ±0.375 3. Complete soldering within 10 seconds. A Anode 6 < mm ≤ 10 ±0.45 K Cathode 10 < mm ≤ 18 ±0.55 C Collector 18 < mm ≤ 30 ±0.65 E Emitter ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 30 mA F F Reverse current I 0.01 μA typ., 10 μA max. V = 4 V R R Peak emission wavelength λ 940 nm typ. I = 20 mA P F Detector Light current I 160 μA min., 1,600 μA max. I = 20 mA, V = 10 V L F CE White paper with a reflection ratio of 90%, d = 4.4 mm (see note) Dark current I 2 nA typ., 200 nA max. V = 10 V, 0 lx D CE Leakage current I 2 μA max. I = 20 mA, V = 10 V with no reflec- LEAK F CE tion Collector–Emitter saturated volt- V (sat) --- --- CE age Peak spectral sensitivity wave- λ 850 nm typ. V = 10 V P CE length Rising time tr 30 μs typ. V = 5 V, R = 1 kΩ, I = 1 mA CC L L Falling time tf 30 μs typ. V = 5 V, R = 1 kΩ, I = 1 mA CC L L Note: The letter “d” indicates the distance between the top surface of the sensor and the sensing object. 152 EE-SY113 Photomicrosensor (Reflective) ■ Engineering Data Forward Current vs. Collector Light Current vs. Forward Current Light Current vs. Collector−Emitter Dissipation Temperature Rating Characteristics (Typical) Voltage Characteristics (Typical) d = 4.4 mm Sensing object: White V = 10 V CE I = 40 mA F paper with a reflection d = 4.4 mm factor of 90% Sensing object: White paper with a reflection factor of 90% I = 30 mA F I = 20 mA F I = 10 mA F Collector−Emitter voltage V (V) CE Ambient temperature Ta (°C) Forward current I (mA) F Relative Light Current vs. Dark Current vs. Ambient Response Time vs. Load Ambient Temperature Temperature Characteristics Resistance Characteristics Characteristics (Typical) (Typical) (Typical) Vcc = 5 V V = 10 V I = 20 mA CE F Ta = 25°C 0 x V = 5 V CE Ambient temperature Ta (°C) Ambient temperature Ta (°C) Load resistance R (kΩ) L Sensing Distance Characteristics Sensing Position Characteristics Sensing Angle Characteristics (Typical) (Typical) (Typical) Ta = 25°C I = 20 mA F I = 20 mA F V = 10 V CE V = 10 V CE Ta = 25°C Sensing object: White paper d = 4.4 mm 1 with a reflection factor of 90% Sensing object: White paper with a reflection factor of 90% Ta = 25°C V = 10 V CE I = 20 mA F d = 4.4 mm d 1 Sensing object: White paper with a reflection factor of 90% Direction d 2 Angle deviation θ (°) Distance d (mm) Distance d (mm) 2 Response Time Measurement Circuit Input 90 % Output 10 % Input Output EE-SY113 Photomicrosensor (Reflective) 153 Light current I (μA) Relative light current I (%) Forward current I (mA) L L F Collector dissipation Pc (mW) Dark current I (nA) Relative light current I (%) D L Light current I (μA) L Relative light current I (%) Response time tr, tf (μs) L Light current I (mA) L Photomicrosensor (Reflective) EE-SY169 Be sure to read Precautions on page 25. ■ Dimensions ■ Features High-quality model with plastic lenses. Note: All units are in millimeters unless otherwise indicated. Highly precise sensing range with a tolerance of ±0.6 mm horizon- tally and vertically. With a red LED sensing dyestuff-type inks. Limited reflective model. For lesser LED forward current the EE-SY169B would be a better choice. ■ Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rated value Emitter Forward current I 40 mA F Surface A (see note 1) Two, C0.2 Pulse forward cur- I 300 mA FP 1±0.1 dia. 1±0.1 dia. rent (see note 2) Reverse voltage V 3 V (see note) R (see note) Detector Collector–Emitter V 30 V CEO voltage Emitter–Collector V --- ECO voltage Collector current I 20 mA C Collector dissipa- P 100 mW C Note: These dimensions are for tion (see note 1) Internal Circuit the surface A. Other lead Ambient tem- Operating Topr 0°C to 70°C wire pitch dimensions are for A C perature Storage Tstg –20°C to 80°C the housing surface. Soldering temperature Tsol 260°C Unless otherwise specified, the (see note 3) tolerances are as shown below. K E Dimensions Tolerance Note: 1. Refer to the temperature rating chart if the ambient temper- ature exceeds 25°C. 3 mm max. ±0.3 Terminal No. Name 2. The pulse width is 10 μs maximum with a frequency of 3 < mm ≤ 6 ±0.375 A Anode 100 Hz. 6 < mm ≤ 10 ±0.45 K Cathode 3. Complete soldering within 10 seconds. 10 < mm ≤ 18 ±0.55 C Collector 18 < mm ≤ 30 ±0.65 E Emitter ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition Emitter Forward voltage V 1.85 V typ., 2.3 V max. I = 20 mA F F Reverse current I 0.01 μA typ., 10 μA max. V = 3 V R R Peak emission wavelength λ 660 nm typ. I = 20 mA P F Detector Light current I 160 μA min., 2,000 μA max. I = 20 mA, V = 5 V L F CE White paper with a reflection ratio of 90%, d = 4 mm (see note) Dark current I 2 nA typ., 200 nA max. V = 5 V, 0 lx D CE Leakage current I 2 μA max. I = 20 mA, V = 5 V with no reflection LEAK F CE Collector–Emitter saturated V (sat) --- --- CE voltage Peak spectral sensitivity wave- λ 850 nm typ. V = 5 V P CE length Rising time tr 30 μs typ. V = 5 V, R = 1 kΩ, I = 1 mA CC L L Falling time tf 30 μs typ. V = 5 V, R = 1 kΩ, I = 1 mA CC L L Note: The letter “d” indicates the distance between the top surface of the sensor and the sensing object. 154 EE-SY169 Photomicrosensor (Reflective) ■ Engineering Data Forward Current vs. Collector Light Current vs. Forward Current Light Current vs. Collector−Emitter Dissipation Temperature Rating Characteristics (Typical) Voltage Characteristics (Typical) Ta = 25°C d = 4 mm Sensing object: White I = 40 mA F d = 4 mm paper with a reflection V = 5 V CE factor of 90% I = 30 mA F I = 20 mA F I = 10 mA F I = 5 mA F Collector−Emitter voltage V (V) CE Ambient temperature Ta (°C) Forward current I (mA) F Relative Light Current vs. Dark Current vs. Ambient Response Time vs. Load Ambient Temperature Temperature Characteristics Resistance Characteristics Characteristics (Typical) (Typical) (Typical) Vcc = 5 V V = 10 V I = 20 mA CE F Ta = 25°C 0lx V = 5 V CE Ambient temperature Ta (°C) Ambient temperature Ta (°C) Load resistance R (kΩ) L Sensing Distance Characteristics Sensing Position Characteristics Sensing Position Characteristics (Typical) (Typical) (Typical) I = 20 mA F I = 20 mA Ta = 25°C F V = 5 V CE V = 5 V CE I = 20 mA F Ta = 25°C Ta = 25°C V = 10 V CE d = 4 mm Sensing object: 1 White paper with Sensing object: Sensing object: White a reflection factor White paper with a paper with a reflection of 90% reflection factor of factor of 90% d1 = 3.5 mm 90% d1 = 4.0 mm Sensing d1 = 4.5 mm d = 0 object Direction Sen- Direction sor Sen- sor Distance d (mm) Distance d (mm) Distance d (mm) 2 2 Sensing Angle Characteristics Sensing Angle Characteristics Response Time Measurement (Typical) (Typical) Circuit Ta = 25° Ta = 25°C d = 3 mm I = 20 mA V F CE d = 4 mm = 10 V I = 20 mA Input F d = 5 mm Sensing object: V = 10 V CE White paper with 90 % a reflection fac d = 3 mm Output tor of 90% d = 4 mm 10 % d = 5 mm Input Output Sensing object: White paper with a reflection factor of 90% Angle deviation θ (°) Angle deviation θ (°) EE-SY169 Photomicrosensor (Reflective) 155 Light current I (μA) Relative light current I (%) L L Forward current I (mA) Relative light current I (%) F L Collector dissipation Pc (mW) Dark Current I (nA) D Light current I (μA) Relative light current I (%) L L Relative light current I (%) L Light current I (μA) Response time tr, tf (μs) L Relative light current I (%) L Photomicrosensor (Reflective) EE-SY169A Be sure to read Precautions on page 25. ■ Dimensions ■ Features High-quality model with plastic lenses. Note: All units are in millimeters unless otherwise indicated. Highly precise sensing range with a tolerance of ±0.6 mm horizon- tally and vertically. Convergent reflective model with infrared LED. ■ Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rated value Emitter Forward current I 50 mA F (see note 1) Pulse forward cur- I 1 A FP rent (see note 2) Surface A Reverse voltage V 3 V R Two, C0.2 Detector Collector–Emitter V 30 V 1±0.1 dia. CEO 1±0.1 dia. voltage (see note) Emitter–Collector V --- ECO (see note) voltage Collector current I 20 mA C Collector dissipa- P 100 mW C tion (see note 1) Ambient tem- Operating Topr 0°C to 70°C perature Storage Tstg –20°C to 80°C Note: These dimensions are for the Internal Circuit surface A. Other lead wire Soldering temperature Tsol 260°C A C (see note 3) pitch dimensions are for the housing surface. Note: 1. Refer to the temperature rating chart if the ambient temper- Unless otherwise specified, the ature exceeds 25°C. tolerances are as shown below. K E 2. The pulse width is 10 μs maximum with a frequency of Dimensions Tolerance 100 Hz. Terminal No. Name 3 mm max. ±0.3 3. Complete soldering within 10 seconds. A Anode 3 < mm ≤ 6 ±0.375 K Cathode 6 < mm ≤ 10 ±0.45 C Collector 10 < mm ≤ 18 ±0.55 E Emitter 18 < mm ≤ 30 ±0.65 ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition Emitter Forward voltage V 1.5 V max. I = 30 mA F F Reverse current I 10 μA max. V = 4 V R R Peak emission wavelength λ 920 nm typ. I = 20 mA P F Detector Light current I 160 μA min., 2,000 μA max. I = 20 mA, V = 5 V L F CE White paper with a reflection ratio of 90%, d = 4 mm (see note) Dark current I 2 nA typ., 200 nA max. V = 5 V, 0 lx D CE Leakage current I 2 μA max. I = 20 mA, V = 5 V with no reflec- LEAK F CE tion Collector–Emitter saturated volt- V (sat) --- --- CE age Peak spectral sensitivity wave- λ 850 nm typ. V = 5 V P CE length Rising time tr 30 μs typ. V = 5 V, R = 1 kΩ, I = 1 mA CC L L Falling time tf 30 μs typ. V = 5 V, R = 1 kΩ, I = 1 mA CC L L Note: The letter “d” indicates the distance between the top surface of the sensor and the sensing object. 156 EE-SY169A Photomicrosensor (Reflective) ■ Engineering Data Forward Current vs. Collector Light Current vs. Forward Current Light Current vs. Collector−Emitter Dissipation Temperature Rating Characteristics (Typical) Voltage Characteristics (Typical) Ta = 25°C d = 4 mm d = 4 mm Sensing object: White I = 40 mA V = 5 V F CE paper with a reflection factor of 90% I = 30 mA F I = 20 mA F I = 10 mA F I = 5 mA F Forward current I (mA) F Collector−Emitter voltage V (V) Ambient temperature Ta (°C) CE Relative Light Current vs. Dark Current vs. Ambient Response Time vs. Load Ambient Temperature Temperature Characteristics Resistance Characteristics Characteristics (Typical) (Typical) (Typical) Vcc = 5 V I = 20 mA V = 10 V F CE Ta = 25°C V = 5 V 0lx CE Ambient temperature Ta (°C) Load resistance R (kΩ) Ambient temperature Ta (°C) L Sensing Distance Characteristics Sensing Position Characteristics Sensing Position Characteristics (Typical) (Typical) (Typical) I = 20 mA F Sensing object: White V = 5 V CE paper with a reflection IF = 20 mA Ta = 25°C Ta = 25°C factor of 90% VCE = 5 V d = 4 mm 1 I = 20 mA F Ta = 25°C Sensing object: V = 10 V CE White paper with d1 = 3.5 mm Sensing object: a reflection factor d1 = 4.0 mm of 90% White paper d1 = 4.5 mm Sensing with a reflection object d = 0 factor of 90% Direction Sen- sor Direction Sen- sor Distance d (mm) 2 Distance d (mm) 2 Distance d (mm) Sensing Angle Characteristics Sensing Angle Characteristics Response Time Measurement (Typical) (Typical) Circuit Ta = 25° I = 20 mA V F CE d = 3 mm Ta = 25°C = 10 V Input d = 4 mm I = 20 mA F Sensing object: d = 5 mm V = 10 V CE White paper d = 3 mm 90 % with a reflection d = 4 mm Output 10 % d = 5 mm factor of 90% Input Output Sensing object: White paper with a reflection factor of 90% Angle deviation θ (°) Angle deviation θ (°) EE-SY169A Photomicrosensor (Reflective) 157 Relative light current I (%) Light current I (μA) L L Relative light current I (%) Forward current I (mA) L F Collector dissipation Pc (mW) Dark Current I (nA) D Light current I (μA) Relative light current I (%) Relative light current I (%) L L L Response time tr, tf (μs) Light current I (μA) L Relative light current I (%) L Photomicrosensor (Reflective) EE-SY169B Be sure to read Precautions on page 25. ■ Dimensions ■ Features High-quality model with plastic lenses. Note: All units are in millimeters unless otherwise indicated. Highly precise sensing range with a tolerance of ±0.6 mm horizon- 3.2 0.5 tally and vertically. With a red LED sensing dyestuff-type links. 2.5 6±0.3Limited reflective model 1.8Higher gain than EE-SY169. Possible to get the same I as EE-SY169 with I =10 mA. (half of 12.5±0.3 L F EE-SY169 condition) ■ Absolute Maximum Ratings (Ta = 25°C) 8±0.3 Item Symbol Rated value Surface A 1 1 Emitter Forward current I 40 mA 3±0.5 3±0.5 F 1± Two, C0.2 (see note 1) 0.1 dia. 1±0.1 dia. (see note) Pulse forward cur- I 300 mA FP 4.8 (see note) rent (see note 2) 9.2±0.5 Reverse voltage V 3 V R 3.2 7±0.1 0.5 Detector Collector–Emitter V 30 V CEO A C voltage Emitter–Collector V --- KE 3 ECO voltage 2.5 Collector current I 20 mA C Collector dissipa- P 100 mW Note: These dimensions are for the C Internal Circuit (see note 1) tion surface A. Other lead wire A C pitch dimensions are for the Ambient tem- Operating Topr 0°C to 70°C housing surface. perature Storage Tstg –20°C to 80°C Unless otherwise specified, the K Soldering temperature Tsol 260°C E tolerances are as shown below. (see note 3) Dimensions Tolerance Note: 1. Refer to the temperature rating chart if the ambient temper- Terminal No. Name 3 mm max. ±0.3 ature exceeds 25°C. A Anode 2. The pulse width is 10 μs maximum with a frequency of 3 < mm ≤ 6 ±0.375 100 Hz. K Cathode 6 < mm ≤ 10 ±0.45 3. Complete soldering within 10 seconds. C Collector 10 < mm ≤ 18 ±0.55 E Emitter 18 < mm ≤ 30 ±0.65 ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition Emitter Forward voltage V 1.85 V typ., 2.3 V max. I = 20 mA F F Reverse current I 0.01 μA typ., 10 μA max. V = 3 V R R Peak emission wavelength λ 660 nm typ. I = 20 mA P F Detector Light current I 160 μA min., 2,000 μA max. I = 10 mA, V = 5 V L F CE White paper with a reflection ratio of 90%, d = 4 mm (see note) Dark current I 2 nA typ., 200 nA max. V = 5 V, 0 lx D CE Leakage current I 2 μA max. I = 20 mA, V = 5 V with no reflec- LEAK F CE tion Collector–Emitter saturated volt- V (sat) --- --- CE age Peak spectral sensitivity wave- λ 850 nm typ. V = 5 V P CE length Rising time tr 30 μs typ. V = 5 V, R = 1 kΩ, I = 1 mA CC L L Falling time tf 30 μs typ. V = 5 V, R = 1 kΩ, I = 1 mA CC L L Note: The letter “d” indicates the distance between the top surface of the sensor and the sensing object. 158 EE-SY169B Photomicrosensor (Reflective) ■ Engineering Data Forward Current vs. Collector Light Current vs. Forward Current Light Current vs. Collector−Emitter Dissipation Temperature Rating Characteristics (Typical) Voltage Characteristics (Typical) 1,400 1,600 60 120 d = 4 mm Ta = 25°C I = 20 mA F d = 4 mm V = 5 V CE Sensing object: White PC 1,400 1,200 paper with a reflection 50 100 factor of 90% 1,200 1,000 IF I = 15 mA F 40 80 1,000 800 30 60 800 600 I = 10 mA F 600 20 40 400 400 I = 5 mA F 10 20 200 200 I = 2.5 mA F 0 0 0 0 0 10 20 30 40 50 60 0 5 1015 2025 30 −40 −20 0 20 40 60 80 100 Forward current I (mA) F Collector−Emitter voltage V (V) Ambient temperature Ta (°C) CE Response Time vs. Load Relative Light Current vs. Dark Current vs. Ambient Resistance Characteristics Ambient Temperature Temperature Characteristics (Typical) Characteristics (Typical) (Typical) 120 10,000 10,000 I = 10 mA F V = 10 V Vcc = 5 V CE V = 5 V CE 0lx Ta = 25°C 1,000 110 1,000 100 100 tf 10 90 100 1 80 tr 0.1 10 70 0.01 60 1 0.001 −40 −20 0 20 40 60 80 100 0.01 0.1 1 10 −30 −20 −10 0 10 20 30 40 50 60 70 80 90 Ambient temperature Ta (°C) Ambient temperature Ta (°C) Load resistance R (kΩ) L Sensing Distance Characteristics Sensing Position Characteristics Sensing Position Characteristics (Typical) (Typical) (Typical) 600 120 120 Sensing object: White IF = 10 mA I = 10 mA Ta = 25°C F Sensing object: paper with a reflection VCE = 5 V V = 5 V I = 20 mA CE F White paper with factor of 90% Ta = 25°C Ta = 25°C V = 10 V CE a reflection factor 500 100 100 d = 4 mm 1 of 90% Sensing object: d1 = 3.5 mm White paper 80 d1 = 4.0 mm 80 400 with a reflection d1 = 4.5 mm factor of 90% Sensing d = 0 60 60 300 object d2 d2 Direction d1 200 40 40 Sen- d1 Direction sor Sen- 100 20 20 Sensor sor 0 0 0 123456 56789 10 11 12 13 0 123456789 10 Distance d (mm) Distance d (mm) Distance d (mm) 2 2 Sensing Angle Characteristics Sensing Angle Characteristics Response Time Measurement (Typical) (Typical) Circuit 240 110 d = 3 mm Ta = 25°C Sensing object: Ta = 25° d = 4 mm I = 10 mA White paper with Input 220 F I = 10 mA F d = 5 mm VCE = 10 V a reflection factor d 0 V = 10 V CE of 90% t 200 105 90 % d = 3 mm Output 180 d = 4 mm 10 % 0 d = 5 mm t 160 d 100 t r t f 140 120 95 IL Input VCC 100 80 90 60 Output 40 85 RL 20 0 80 −30 −20 −10 0 10 20 −20 −10 0 10 20 Angle deviation θ (°) Angle deviation θ (°) EE-SY169B Photomicrosensor (Reflective) 159 Forward current I (mA) F Light current I (μA) L Relative light current I (%) L Relative light current I (%) L Collector dissipation Pc (mW) Dark Current I (nA) D Relative light current I (%) L Relative light current I (%) L Light current I (μA) L Response time tr, tf (μs) Relative light current I (%) L Light current I (μA) L Photomicrosensor (Reflective) EE-SY171 Be sure to read Precautions on page 25. ■ Dimensions ■ Features 3-mm-tall, thin model Note: All units are in millimeters unless otherwise indicated. Two, 1.2 dia. Two, 2 dia. Anode mark ■ Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rated value Four, 0.5 Emitter Forward current I 50 mA F (see note 1) Pulse forward cur- I 1 A FP rent (see note 2) Reverse voltage V 4 V R Detector Collector–Emitter V 30 V CEO voltage Emitter–Collector V --- ECO voltage 0° to 30° Four, 0.25 Collector current I 20 mA C Collector dissipa- P 100 mW C tion (see note 1) Ambient tem- Operating Topr –40°C to 85°C perature Storage Tstg –40°C to 85°C Internal Circuit Soldering temperature Tsol 260°C A C Unless otherwise specified, the (see note 3) tolerances are as shown below. Note: 1. Refer to the temperature rating chart if the ambient temper- ature exceeds 25°C. K E Dimensions Tolerance 2. The pulse width is 10 μs maximum with a frequency of 3 mm max. ±0.3 100 Hz. Terminal No. Name 3. Complete soldering within 10 seconds. 3 < mm ≤ 6 ±0.375 A Anode 6 < mm ≤ 10 ±0.45 K Cathode 10 < mm ≤ 18 ±0.55 C Collector 18 < mm ≤ 30 ±0.65 E Emitter ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 30 mA F F Reverse current I 0.01 μA typ., 10 μA max. V = 4 V R R Peak emission wavelength λ 940 nm typ. I = 20 mA P F Detector Light current I 50 μA min., 500 μA max. I = 20 mA, V = 10 V L F CE White paper with a reflection ratio of 90%, d = 3.5 mm (see note) Dark current I 2 nA typ., 200 nA max. V = 10 V, 0 lx D CE Leakage current I 2 μA max. I = 20 mA, V = 10 V with no reflection LEAK F CE Collector–Emitter saturated V (sat) --- --- CE voltage Peak spectral sensitivity wave- λ 850 nm typ. V = 10 V P CE length Rising time tr 30 μs typ. V = 5 V, R = 1 kΩ, I = 1 mA CC L L Falling time tf 30 μs typ. V = 5 V, R = 1 kΩ, I = 1 mA CC L L Note: The letter “d” indicates the distance between the top surface of the sensor and the sensing object. 160 EE-SY171 Photomicrosensor (Reflective) ■ Engineering Data Forward Current vs. Collector Light Current vs. Forward Current Light Current vs. Collector−Emitter Dissipation Temperature Rating Characteristics (Typical) Voltage Characteristics (Typical) Ta = 25°C d = 3.5 mm Ta = 25°C Sensing object: White V = 10 V CE paper with a reflection d = 3.5 mm I = 40 mA F factor of 90% Sensing object: White paper with a I = 30 mA reflection factor of F 90% I = 20 mA F I = 10 mA F Ambient temperature Ta (°C) Forward current I (mA) F Collector−Emitter voltage V (V) CE Relative Light Current vs. Dark Current vs. Ambient Response Time vs. Load Ambient Temperature Temperature Characteristics Resistance Characteristics Characteristics (Typical) (Typical) (Typical) I = 20 mA V = 10 V Vcc = 5 V F CE V = 5 V 0lx Ta = 25°C CE Load resistance R (kΩ) Ambient temperature Ta (°C) L Ambient temperature Ta (°C) Sensing Distance Characteristics Sensing Position Characteristics Sensing Angle Characteristics (Typical) (Typical) (Typical) IF = 20 mA VCE = 10 V I = 20 mA F Ta = 25°C V = 10 V CE Ta = 25°C Sensing object: White paper d = 3.5 mm with a reflection factor of 90% d1 = 3 mm d1 = 4 mm d1 = 5 mm Sensing object: White paper with a reflection factor of 90% Ta = 25°C I = 20 mA F V = 10 V CE Sensing object: White paper with a reflection factor of 90% Distance d (mm) Angle deviation θ (°) 2 Distance d (mm) Response Time Measurement Circuit Input 90 % Output 10 % Input Output EE-SY171 Photomicrosensor (Reflective) 161 Light current I (μA) L Relative light current I (%) Forward current I (mA) L F Collector dissipation Pc (mW) Relative light current I (%) Dark Current I (nA) L D Light current I (μA) L Relative light current I (%) L Response time tr, tf (μs) Light current I (μA) L Photomicrosensor (Reflective) EE-SY193 Be sure to read Precautions on page 25. ■ Dimensions ■ Features Ultra-compact model. Note: All units are in millimeters unless otherwise indicated. PCB surface mounting type. ■ Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rated value Emitter Forward current I 25 mA F (see note 1) Pulse forward cur- I 100 mA FP rent (see note 2) Reverse voltage V 6 V R Detector Collector–Emitter V 18 V CEO voltage Internal Circuit Recommended Emitter–Collector V 4 V ECO soldering patterns voltage C A Collector current I 20 mA C Collector dissipa- P 75 mW C tion (see note 1) E K Ambient tem- Operating Topr –30°C to 80°C perature Storage Tstg –40°C to 85°C Terminal No. Name Reflow soldering Tsol 220°C A Anode (see note 3) K Cathode Manual soldering Tsol 300°C Unless otherwise specified, the (see note 3) C Collector tolerances are ±0.2 mm. E Emitter Note: 1. Refer to the temperature rating chart if the ambient temper- ature exceeds 25°C. 2. Duty: 1/100; Pulse width: 0.1 ms 3. Complete soldering within 10 seconds for reflow soldering and within 3 seconds for manual soldering. ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition Emitter Forward voltage V 1.1 V typ., 1.3 V max. I = 4 mA F F Reverse current I 10 μA max. V = 6 V R R Peak emission wavelength λ 940 nm typ. I = 20 mA P F Detector Light current I 100 μA min., 150 μA typ., Aluminum-deposited surface, L 360 μA max. I = 4 mA, V = 2 V, d = 1 mm (see F CE note) Dark current I 100 nA max. V = 10 V, 0 lx D CE Leakage current I 1 μA max. I = 4 mA, V = 2 V LEAK F CE Collector–Emitter saturated volt- V (sat) --- --- CE age Peak spectral sensitivity wave- λ 900 nm typ. --- P length Rising time tr 25 μs typ. V = 2 V, R = 1 kΩ, CC L Falling time tf 30 μs typ. V = 2 V, R = 1 kΩ, CC L Note: The letter “d” indicates the distance between the top surface of the sensor and the sensing object. 162 EE-SY193 Photomicrosensor (Reflective) ■ Engineering Data Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) Aluminum deposited surface Forward current I (mA) F Forward voltage V (V) Ambient temperature Ta (°C) F Dark Current vs. Ambient Tem- Light Current vs. Collector−Emitter Relative Light Current vs. Ambient perature Characteristics (Typical) Voltage Characteristics (Typical) Temperature Characteristics (Typical) Aluminum deposited surface Ambient temperature Ta (°C) Ambient temperature Ta (°C) Collector−Emitter voltage V (V) CE Response Time vs. Load Resist- Sensing Distance Characteristics Sensing Position Characteristics ance Characteristics (Typical) (Typical) (Typical) Aluminum deposited Aluminum deposited surface surface 1 mm Load resistance R (kΩ) L Distance d (mm) Response Time Measurement Circuit Input 90 % Output 10 % Input Output EE-SY193 Photomicrosensor (Reflective) 163 Forward current I (mA) F Response time tr, tf (μs) Light current I (μA) L Collector dissipation Pc (mW) Relative light current I (%) L Relative light current I (%) L Forward current I (mA) F Light current I (μA) L Dark Current I (nA) Relative light current I (%) D L Unit: mm (inch) ■ Tape and Reel Reel Tape Tape configuration Terminating part Leading part Parts mounted (40 mm min.) (400 mm min.) Empty (40 mm min.) Pull-out direction Tape quantity 3,000 pcs./reel 164 EE-SY193 Photomicrosensor (Reflective) Precautions ■ Soldering Information Reflow soldering The following soldering paste is recommended: Melting temperature: 178 to 192°C The recommended thickness of the metal mask for screen printing is between 0.2 and 0.25 mm. Set the reflow oven so that the temperature profile shown in the following chart is obtained for the upper surface of the product being soldered. 10 sec. max. 220°C max. 4°C/s max. 140 to 160°C 40 sec. max. 60 to 120 sec 4°C/s max. Time Manual soldering Use”Sn 60” (60% tin and 40% lead) or solder with silver content. Use a soldering iron of less than 25 W, and keep the temperature of the iron tip at 300°C or below. Solder each point for a maximum of three seconds. After soldering, allow the product to return to room temperature before handling it. Storage To protect the product from the effects of humidity until the package is opened, dry-box storage is recommended. If this is not possible, store the product under the following conditions: Temperature: 10 to 30°C Humidity: 60% max. The product is packed in a humidity-proof envelope. Reflow soldering must be done within 48 hours after opening the envelope, during which time the product must be stored under 30°C at 80% maximum humidity. If it is necessary to store the product after opening the envelope, use dry-box storage or reseal the envelope. Baking If a product has remained packed in a humidity-proof envelope for six months or more, or if more than 48 hours have lapsed since the envelope was opened, bake the product under the following conditions before use: Reel:60°C for 24 hours or more Bulk:80°C for 24 hours or more EE-SY193 Photomicrosensor (Reflective) 165 Temperature Photomicrosensor (Reflective) EE-SB5(-B) Be sure to read Precautions on page 25. ■ Dimensions ■ Features Dust-tight construction. Note: All units are in millimeters unless otherwise indicated. With a visible-light intercepting filter which allows objects to be sensed without being greatly influenced by the light radiated from fluorescent lamps. Mounted with M3 screws. Model with soldering terminals (EE-SB5). Model with PCB terminals (EE-SB5-B). Two, 3.2±0.2 dia. holes Optical axis Optical axis ■ Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rated value 9±0.2 11.5±0.2 Emitter Forward current I 50 mA F (see note 1) Four, 0.5 Pulse forward cur- I 1 A FP rent (see note 2) Four, 0.25 2.54±0.2 Reverse voltage V 4 V R 7.62±0.3 2.54±0.2 Detector Collector–Emitter V 30 V EE-SB5 EE-SB5-B CEO voltage Emitter–Collector V --- ECO voltage Collector current I 20 mA C Internal Circuit Collector dissipa- P 100 mW C tion (see note 1) A C Ambient tem- Operating Topr –25°C to 80°C Unless otherwise specified, the perature tolerances are as shown below. Storage Tstg –30°C to 80°C Soldering temperature Tsol 260°C K E Dimensions Tolerance (see note 3) 3 mm max. ±0.3 Note: 1. Refer to the temperature rating chart if the ambient temper- Terminal No. Name 3 < mm ≤ 6 ±0.375 ature exceeds 25°C. A Anode 6 < mm ≤ 10 ±0.45 2. The pulse width is 10 μs maximum with a frequency of K Cathode 100 Hz. 10 < mm ≤ 18 ±0.55 C Collector 3. Complete soldering within 10 seconds. 18 < mm ≤ 30 ±0.65 E Emitter ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 30 mA F F Reverse current I 0.01 μA typ., 10 μA max. V = 4 V R R Peak emission wavelength λ 940 nm typ. I = 20 mA P F Detector Light current I 200 μA min., 2,000 μA max. I = 20 mA, V = 10 V L F CE White paper with a reflection ratio of 90%, d = 5 mm (see note) Dark current I 2 nA typ., 200 nA max. V = 10 V, 0 lx D CE Leakage current I 2 μA max. I = 20 mA, V = 10 V with no reflec- LEAK F CE tion Collector–Emitter saturated volt- V (sat) --- --- CE age Peak spectral sensitivity wave- λ 850 nm typ. V = 10 V P CE length Rising time tr 30 μs typ. V = 5 V, R = 1 kΩ, I = 1 mA CC L L Falling time tf 30 μs typ. V = 5 V, R = 1 kΩ, I = 1 mA CC L L Note: The letter “d” indicates the distance between the top surface of the sensor and the sensing object. 166 EE-SB5(-B) Photomicrosensor (Reflective) ■ Engineering Data Forward Current vs. Collector Light Current vs. Forward Current Light Current vs. Collector−Emitter Dissipation Temperature Rating Characteristics (Typical) Voltage Characteristics (Typical) Ta = 25°C d = 5 mm Ta = 25°C Sensing object: V = 10 V CE I = 40 mA White paper with F d = 5 mm a reflection factor Sensing object: of 90% White paper with a reflection fac tor of 90% I = 30 mA F I = 20 mA F I = 10 mA F Collector−Emitter voltage V (V) Ambient temperature Ta (°C) Forward current I (mA) CE F Relative Light Current vs. Dark Current vs. Ambient Response Time vs. Load Ambient Temperature Temperature Characteristics Resistance Characteristics Characteristics (Typical) (Typical) (Typical) V = 5 V V = 10 V CC CE I = 20 mA F Ta = 25°C 0lx V = 5 V CE Load resistance R (kΩ) L Ambient temperature Ta (°C) Ambient temperature Ta (°C) Sensing Distance Characteristics Sensing Position Characteristics Sensing Position Characteristics (Typical) (Typical) (Typical) I = 20 mA F I = 20 mA F V = 10 V CE V = 10 V CE Ta = 25°C Ta = 25°C d = 5 mm 1 d = 5 mm 1 Sensing Sensing object: White paper object: White with a reflection paper with a factor of 90% reflection factor of 90% Ta = 25°C I = 20 mA F V = 10 V CE Sensing object: White paper with a reflection factor of 90% Distance d (mm) 2 Distance d (mm) Distance d (mm) 2 Sensing Angle Characteristics Response Time Measurement (Typical) Circuit Input 90 % Output 10 % Input Ta = 25°C I = 20 mA F V = 10 V CE Output d = 5 mm Sensing object: White paper with a reflection factor of 90% Angle deviation θ (°) EE-SB5(-B) Photomicrosensor (Reflective) 167 Forward current I (mA) Light current I (μA) Relative light current I (%) F L L Relative light current I (%) L Collector dissipation P (mW) C Relative light current I (%) L Dark Current I (nA) D Light current I (mA) L Relative light current I (%) L Response time tr, tf (μs) Light current I (mA) L Photomicrosensor (Reflective) EE-SF5(-B) Be sure to read Precautions on page 25. ■ Dimensions ■ Features Dust-tight construction. Note: All units are in millimeters unless otherwise indicated. With a visible-light intercepting filter which allows objects to be sensed without being greatly influenced by the light radiated from Matted fluorescent lamps. Mounted with M2 screws. Model with soldering terminals (EE-SF5). Model with PCB terminals (EE-SF5-B). 1.9 dia. 2.2±0.2 dia. hole ■ Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rated value Emitter Forward current I 50 mA F Four, (see note 1) 1.5 7.6±1 Four, 0.5 Pulse forward cur- I 1 A FP Four, 0.25 rent (see note 2) 2.54 Reverse voltage V 4 V 7.62±0.3 R 2.54±0.2 Detector Collector–Emitter V 30 V CEO voltage EE-SF5 EE-SF5-B Emitter–Collector V --- ECO voltage Collector current I 20 mA C Internal Circuit Collector dissipa- P 100 mW C tion (see note 1) A C Unless otherwise specified, the Ambient tem- Operating Topr –25°C to 80°C tolerances are as shown below. perature Storage Tstg –30°C to 80°C Soldering temperature Tsol 260°C K E Dimensions Tolerance (see note 3) 3 mm max. ±0.3 Terminal No. Name Note: 1. Refer to the temperature rating chart if the ambient temper- 3 < mm ≤ 6 ±0.375 ature exceeds 25°C. A Anode 6 < mm ≤ 10 ±0.45 2. The pulse width is 10 μs maximum with a frequency of K Cathode 100 Hz. 10 < mm ≤ 18 ±0.55 C Collector 3. Complete soldering within 10 seconds. 18 < mm ≤ 30 ±0.65 E Emitter ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 30 mA F F Reverse current I 0.01 μA typ., 10 μA max. V = 4 V R R Peak emission wavelength λ 940 nm typ. I = 20 mA P F Detector Light current I 200 μA min., 2,000 μA max. I = 20 mA, V = 10 V L F CE White paper with a reflection ratio of 90%, d = 5 mm (see note) Dark current I 2 nA typ., 200 nA max. V = 10 V, 0 lx D CE Leakage current I 2 μA max. I = 20 mA, V = 10 V with no reflec- LEAK F CE tion Collector–Emitter saturated volt- V (sat) --- --- CE age Peak spectral sensitivity wave- λ 850 nm typ. V = 10 V P CE length Rising time tr 30 μs typ. V = 5 V, R = 1 kΩ, I = 1 mA CC L L Falling time tf 30 μs typ. V = 5 V, R = 1 kΩ, I = 1 mA CC L L Note: The letter “d” indicates the distance between the top surface of the sensor and the sensing object. 168 EE-SF5(-B) Photomicrosensor (Reflective) ■ Engineering Data Forward Current vs. Collector Light Current vs. Forward Current Light Current vs. Collector−Emitter Dissipation Temperature Rating Characteristics (Typical) Voltage Characteristics (Typical) Ta = 25°C d = 5 mm Ta = 25°C Sensing object: I = 40 mA F V = 10 V CE White paper with d = 5 mm a reflection factor of 90% Sensing object: I = 30 mA F White paper with a reflection factor of 90% I = 20 mA F I = 10 mA F Collector−Emitter voltage V (V) Forward current I (mA) CE F Ambient temperature Ta (°C) Relative Light Current vs. Dark Current vs. Ambient Response Time vs. Load Ambient Temperature Temperature Characteristics Resistance Characteristics Characteristics (Typical) (Typical) (Typical) V = 5 V CC I = 20 mA V = 10 V F CE Ta = 25°C V = 5 V 0lx CE Ambient temperature Ta (°C) Load resistance R (kΩ) Ambient temperature Ta (°C) L Sensing Distance Characteristics Sensing Position Characteristics Sensing Position Characteristics (Typical) (Typical) (Typical) Ta = 25°C V = 10 V CE I = 20 mA F I = 20 mA F V = 5 V Sensing object: White paper CE V = 5 V CE Ta = 25°C with a reflection factor of 90% Ta = 25°C (a) : d = 3 mm d = 5 mm 1 1 (b) : d = 5 mm 1 Sensing Sensing object: White object: White paper with a paper with a reflection reflection factor of 90% Phototransistor side factor of 90% LED side d1 d1 = 5 mm Distance d (mm) Distance d (mm) 2 2 Distance d (mm) Sensing Angle Characteristics Sensing Angle Characteristics Response Time Measurement (Typical) (Typical) Circuit Input 90 % Output 10 % Input Sensing Ta = 25°C Ta = 25°C object I = 20 mA F I = 20 mA F V = 10 V CE V = 10 V Output CE d = 5 mm Sensing object: White paper Sensing object: White paper with a reflection factor of 90% with a reflection factor of 90% d = 5 mm Angle deviation θ (°) Angle deviation θ (°) EE-SF5(-B) Photomicrosensor (Reflective) 169 Relative light current I (%) Forward current I (mA) L F Light current I (μA) L Relative light current I (%) L Collector dissipation P (mW) C Light current I (mA) Relative light current I (%) L L Dark Current I (nA) D Relative light current I (%) L Light current I (mA) Response time tr, tf (μs) L Relative light current I (%) L Photomicrosensor (Reflective) EE-SY310/-SY410 Be sure to read Precautions on page 25. ■ Dimensions ■ Features Incorporates an IC chip with a built-in detector element and ampli- Note: All units are in millimeters unless otherwise indicated. fier. Incorporates a detector element with a built-in temperature com- Five, 0.5 pensation circuit. Compact reflective model with a molded housing. +0.2 4.6A wide supply voltage range: 4.5 to 16 VDC −0.3 Directly connects with C-MOS and TTL. Dark ON model (EE-SY310) Two. R1.5 Two. R2 Light ON model (EE-SY410) ■ Absolute Maximum Ratings (Ta = 25°C) Five, 0.3 Item Symbol Rated value Emitter Forward current I 50 mA F (see note 1) Reverse voltage V 4 V R 15 to 18 Pulse forward I 1 A 17 to 24 FP current (see note 2) Detector Power supply V 16 V CC voltage Internal Circuit Output voltage V 28 V OUT A V Output current I 16 mA OUT O Permissible out- P 250 mW Unless otherwise specified, the OUT put dissipation (see note 1) K G tolerances are as shown below. Ambient tempera- Operating Topr –40°C to 75°C Terminal No. Name Dimensions Tolerance ture Storage Tstg –40°C to 85°C A Anode 3 mm max. ±0.2 Soldering temperature Tsol 260°C (see note 3) K Cathode 3 < mm ≤ 6 ±0.24 V Power supply Note: 1. Refer to the temperature rating chart if the ambient temper- 6 < mm ≤ 10 ±0.29 (Vcc) ature exceeds 25°C. 10 < mm ≤ 18 ±0.35 O Output (OUT) 2. The pulse width is 10 μs maximum with a frequency of 100 Hz. G Ground (GND) 18 < mm ≤ 30 ±0.42 3. Complete soldering within 10 seconds. ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition 1.2 V typ., 1.5 V max. I = 20 mA Emitter Forward voltage V F F Reverse current I 0.01 μA typ., 10 μA max. V = 4 V R R Peak emission wavelength λ 920 nm typ. I = 20 mA P F Detector Low-level output voltage V 0.12 V typ., 0.4 V max. Vcc = 4.5 to 16 V, I = 16 mA, OL OL without incident light (EE-SY310), with incident light (EE-SY410) (see notes 1 and 2) High-level output voltage V 15 V min. Vcc = 16 V, R = 1 kΩ, OH L with incident light (EE-SY310), without incident light (EE-SY410) (see notes 1 and 2) Current consumption I 3.2 mA typ., 10 mA max. Vcc = 16 V CC Peak spectral sensitivity λ 870 nm typ. V = 4.5 to 16 V P CC wavelength LED current when output is OFF I 6 mA typ., 15 mA max. V = 4.5 to 16 V FT CC LED current when output is ON Hysteresis ΔH 17% typ. V = 4.5 to 16 V CC Response frequency f 50 Hz min. V = 4.5 to 16 V, I = 15 mA, I = 16 mA CC F OL Response delay time t (t )3 μs typ. V = 4.5 to 16 V, I = 15 mA, I = 16 mA PLH PHL CC F OL Response delay time t (t ) 20 μs typ. V = 4.5 to 16 V, I = 15 mA, I = 16 mA PHL PLH CC F OL 170 EE-SY310/-SY410 Photomicrosensor (Reflective) Note: 1. With incident light" denotes the condition whereby 4. The value of the response frequency is measured by rotating the light reflected by white paper with a reflection the disk as shown below. factor of 90% at a sensing distance of 5 mm is received by the photo IC when the forward current (IF) of the LED is 20 mA. 200 mm dia. 15 mm 2. Sensing object: White paper with a reflection factor of 90% at a sensing distance of 5 mm. 15 mm 15 mm 3. Hysteresis denotes the difference in forward LED current value, expressed in percentage, calculated 5 mm from the respective forward LED currents when the 5. The following illustrations show the definition of response delay photo IC is turned from ON to OFF and when the time. The value in the parentheses applies to the EE-SY410. photo IC is turned from OFF to ON. Input Input Output Output (tPLH) (tPHL)( (tPHL)tPLH) EE-SY310 EE-SY410 ■ Engineering Data Note: The values in the parentheses apply to the EE-SY410. Forward Current vs. Collector Forward Current vs. Forward LED Current vs. Supply Voltage Dissipation Temperature Rating Voltage Characteristics (Typical) (Typical) Ta = 25°C R = 1 kΩ L Ta = −30°C I OFF (I ON) Ta = 25°C FT FT Ta = 70°C I ON (I OFF) FT FT Supply voltage V (V) Forward voltage V (V) CC F Ambient temperature Ta (°C) LED Current vs. Ambient Low-level Output Voltage vs. Low-level Output Voltage vs. Temperature Characteristics Output Current (Typical) Ambient Temperature (Typical) Characteristics (Typical) Ta = 25°C V = 5 V CC V = 5 V CC V = 5 V R = 330 Ω CC L I = 0 mA (15 mA) F I = 0 mA (15 mA) F I OFF (I ON) FT FT I = 16 mA OL I ON (I OFF) FT FT I = 5 mA OL Output current I (mA) Ambient temperature Ta (°C) OUT Ambient temperature Ta (°C) Current Consumption vs. Supply Response Delay Time vs. Forward Sensing Position Characteristics Voltage (Typical) Current (Typical) (Typical) I = 20 mA F V = 5 V VCC = 5 V CC Ta = 25°C Ta = 25°C R = 330 Ω I = 0 mA (15 mA) L F Sensing object: White paper with a reflection Ta = 25°C factor of 90% VOUT (EE-SY3@@) VOUT (EE-SY4@@) tPHL (tPLH) Operate Release Supply voltage V (V) Forward current I (mA) CC F Distance d (mm) 1 EE-SY310/-SY410 Photomicrosensor (Reflective) 171 Current consumption Icc (mA) Forward current I (mA) LED current I (mA) F FT Output allowable dissipation P (mW) C Low level output voltage V (V) OL Forward current I (mA) Response delay time t , t (μs) F PHL PLH Distance d (mm) 2 Low level output voltage V (V) OL LED current I (mA) FT Photomicrosensor (Reflective) EE-SY313/-SY413 Be sure to read Precautions on page 25. ■ Dimensions ■ Features Incorporates an IC chip with a built-in detector element and ampli- Note: All units are in millimeters unless otherwise indicated. fier. Incorporates a detector element with a built-in temperature com- Five, 0.5 pensation circuit. Compact reflective Photomicrosensor (EE-SY310/-SY410) with a molded housing and a dust-tight cover. A wide supply voltage range: 4.5 to 16 VDC Directly connects with C-MOS and TTL. Dark ON model (EE-SY313) Light ON model (EE-SY413) ■ Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rated value Emitter Forward current I 50 mA (see note 1) F Reverse voltage V 4 V R 15 to 18 17 to 24 Pulse forward I 1 A FP current (see note 2) Detector Power supply V 16 V CC voltage Internal Circuit Output voltage V 28 V OUT A V Output current I 16 mA OUT O Unless otherwise specified, the Permissible P 250 mW (see note 1) OUT K G output dissipa- tolerances are as shown below. tion Terminal No. Name Dimensions Tolerance Ambient tem- Operating Topr –40°C to 65°C perature A Anode 3 mm max. ±0.3 Storage Tstg –40°C to 85°C K Cathode Soldering temperature Tsol 260°C 3 < mm ≤ 6 ±0.375 (see note 3) V Power supply 6 < mm ≤ 10 ±0.45 (Vcc) Note: 1. Refer to the temperature rating chart if the ambient temper- 10 < mm ≤ 18 ±0.55 O Output (OUT) ature exceeds 25°C. 18 < mm ≤ 30 ±0.65 G Ground (GND) 2. The pulse width is 10 μs maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 20 mA F F Reverse current I 0.01 μA typ., 10 μA max. V = 4 V R R Peak emission wave- λ 920 nm typ. I = 20 mA P F length Detector Low-level output voltage V 0.12 V typ., 0.4 V max. Vcc = 4.5 to 16 V, I = 16 mA, without incident light (EE- OL OL SY313), with incident light (EE-SY413) (see notes 1 and 2) High-level output volt- V 15 V min. Vcc = 16 V, R = 1 kΩ, with incident light (EE-SY313), with- OH L age out incident light (EE-SY413) (see notes 1 and 2) Current consumption I 3.2 mA typ., 10 mA max. Vcc = 16 V CC Peak spectral sensitivity λ 870 nm typ. V = 4.5 to 16 V P CC wavelength LED current when output is OFF I 10 mA typ., 20 mA max. V = 4.5 to 16 V FT CC LED current when output is ON Hysteresis ΔH 17% typ. V = 4.5 to 16 V CC Response frequency f 50 pps min. V = 4.5 to 16 V, I = 20 mA, I = 16 mA CC F OL Response delay time t (t )3 μs typ. V = 4.5 to 16 V, I = 20 mA, I = 16 mA PLH PHL CC F OL Response delay time t (t ) 20 μs typ. V = 4.5 to 16 V, I = 20 mA, I = 16 mA PHL PLH CC F OL 172 EE-SY313/-SY413 Photomicrosensor (Reflective) Note: 1. With incident light" denotes the condition whereby 4. The value of the response frequency is measured by rotating the light reflected by white paper with a reflection the disk as shown below. factor of 90% at a sensing distance of 4.4 mm is received by the photo IC when the forward current (IF) of the LED is 20 mA. 200 mm dia. 15 mm 2. Sensing object: White paper with a reflection factor of 90% at a sensing distance of 4.4 mm. 15 mm 15 mm 3. Hysteresis denotes the difference in forward LED current value, expressed in percentage, calculated 4.4 mm from the respective forward LED currents when the 5. The following illustrations show the definition of response delay photo IC is turned from ON to OFF and when the time. The value in the parentheses applies to the EE-SY413. photo IC is turned from OFF to ON. Input Input Output Output (tPLH) (tPHL)( (tPHL)tPLH) EE-SY313 EE-SY413 ■ Engineering Data Note: The values in the parentheses apply to the EE-SY413. Forward Current vs. Collector Forward Current vs. Forward LED Current vs. Supply Voltage Dissipation Temperature Rating Voltage Characteristics (Typical) (Typical) Ta = 25°C R = 1 kΩ L I OFF (I ON) Ta = −30°C FT FT Ta = 25°C Ta = 70°C I ON (I OFF) FT FT Supply voltage V (V) Forward voltage V (V) CC Ambient temperature Ta (°C) F LED Current vs. Ambient Low-level Output Voltage vs. Low-level Output Voltage vs. Temperature Characteristics Output Current (Typical) Ambient Temperature (Typical) Characteristics (Typical) Ta = 25°C V = 5 V CC V = 5 V CC V = 5 V R = 330 Ω CC L I = 0 mA (20 mA) F I = 0 mA (20 mA) F I OFF (I ON) FT FT I = 16 mA OL I ON (I OFF) FT FT I = 5 mA OL Output current I (mA) Ambient temperature Ta (°C) Ambient temperature Ta (°C) C Current Consumption vs. Supply Response Delay Time vs. Forward Sensing Position Characteristics Voltage (Typical) Current (Typical) (Typical) I = 20 mA F VCC = 5 V V = 5 V CC Ta = 25°C Ta = 25°C R = 330 Ω I = 0 mA (15 mA) L F Sensing object: White Ta = 25°C paper with a reflection VOUT factor of 90% (EE-SY3@@) VOUT (EE-SY4@@) tPHL (tPLH) Operate Release tPLH (tPHL) Supply voltage V (V) Distance d (mm) CC 1 Forward current I (mA) F EE-SY313/-SY413 Photomicrosensor (Reflective) 173 Current consumption Icc (mA) LED current I (mA) FT Forward current I (mA) F Output allowable dissipation P (mW) C Low level output voltage V (V) OL Response delay time t , t (μs) PHL PLH Forward current I (mA) F Distance d (mm) 2 Low level output voltage V (V) OL LED current I (mA) FT 174 EE-SY313/-SY413 Photomicrosensor (Reflective) Information Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 176 Security Trade Control. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 185 175 Reliability ■ Market Product Quality –7 OMRON is making efforts so that OMRON’s Photomicrosensors can achieve a failure rate of only 10 /h. OMRON will continue improving the quality of its products to comply with OMRON Photomicrosensors users’ demand for product quality while actively providing good after-sales service. OMRON’s Photomicrosensors achieved a failure rate of 10 ppm. Figure 5 shows the reasons for the return of OMRON Photomicrosensors. The reasons for approximately two-thirds of the products sent back were that they were not working or they were destroyed. It is possible that they were not working or they were destructed because excessive voltages were imposed on them or they were not operated properly according to their specifications. To solve such problems, OMRON is actively holding preliminary meetings with customers who will use OMRON products and advise them of the operating conditions required by the products while actively providing them with after-sales service. Figure 5. Reasons for Products Sent Back Design problems Other (0.4%) (1.8%) Element problems (7.2%) Destruction Component (35.3%) problems (27.0%) Not working (28.4%) ■ Reliability The life of any Photomicrosensor depends on the secular changes of the optical output of the LED built into the Photomicrosensor. The following are the output characteristics of the Photomicrosensor, all of which depend on the optical output of the LED. Phototransistor output Light current (I ) L Photo IC output LED current I with the photo IC output ON and OFF FT Amplifier output (reflective sensor) Sensing distance d OMRON has been conducting reliability tests of each type of Photomicrosensor to check the secular changes of the optical output of the LED built into the Photomicrosensor. 176 Product Quality Control and Reliability ■ Reliability Tests In principle, Photomicrosensors conform to JEITA standards. The following table shows the details of the reliability tests of Photomicrosensors con- ducted by OMRON. Figure 6. Details of Reliability Tests Classification Test Detail Conforming standard Thermal con- Soldering heat Evaluates the soldering heat resistivity of products. Usually, JEITA ED-4701/300 dition test resistivity this test is conducted under the following conditions. ED-8121 Soldering temperature: 260±5°C JIS C7021: A1 Soldering time:10±1 s IEC Pub68-2-20 Thermal shock Evaluates the resistivity of products to radical temperature JEITA ED-4701/300 changes. Usually, this test is conducted under the following JIS C7021: A3 conditions. IEC Pub68-2-14 Ta: 0°C to 100°C (liquid bath) or TstgMIN to TstgMAX (liquid bath) Temperature cy- JEITA ED-4701/100 The five-minute storage Evaluates the low- and high-temperature cle resistivity of products. JIS C7021: A4 periods at a temperature IEC Pub68-2-14 of 25°C in the test may Tstg min. 25°C Tstg max. 25°C (30 min) (5 min) (30 min) (5 min) be omitted. 1 cycle Temperature JEITA ED-4701/200 Evaluates the high-temperature and and humidity cy- high-humidity resistivity of products. JIS C7021: A5 cle IEC Pub68-2-4 65°C 90% to 95% 25°C 10 cycles −10°C 24 h 1 cycle Mechanical Soldering ease Evaluates the terminal soldering ease of the products. Usu- JEITA ED-4701/300 test ally, this test is conducted under the following conditions. ED-8121 Soldering temperature: 230±5°C JIS C7021: A2 Soldering time: 5±0.5 s IEC Pub68-2-20 Terminal Evaluates the resistivity of the terminals of products to the JEITA ED-4701/400 strength force imposed on the terminals while the products are ED-8121 mounted, wired, or operated. JIS C7021: A11 1. Tension test IEC Pub68-2-21 On each terminal of products, a specified load is imposed for 10±1 s in the direction of the terminal. 2. Bending test On the tip of each terminal of products, a specified load is imposed to bend the terminal by 90° and to change it back. Shock resis- Judges the structural resistivity and mechanical resistivity of JEITA ED-4701/400 A product may be sub- tance products. The conditions of this test vary with the product ED-8121 jected to this test after it structure. Usually, this test is conducted under the following is packed up. JIS C7021: A7 conditions. IEC Pub68-2-27 2 Impact acceleration:14,700 m/s Pulse width: 0.5 ms Vibration resis- Evaluates the vibration resistivity of products while they are JEITA ED-4701/400 A product may be sub- tance transported or operated. Usually, this test is conducted under ED-8121 jected to this test after it the following conditions. is packed up. JIS C7021: A10 Frequency: 100 to 2000 Hz/4 min IEC Pub68-2-21 2 200 m/s Natural drop Evaluates the irregular shock resistivity of products while JEITA EIAJ-8121 A product may be sub- they are handled, transported, or operated. Usually, this test JIS C7021: A8 jected to this test after it is conducted under the following conditions. IEC Pub68-2-32 is packed up. Height: 75 cm No. of times: 3 Product Quality Control and Reliability 177 Classification Test Detail Conforming standard Life expectan- Continuous op- Evaluates the resistivity of products to a continuous, long- EIAJ-EDX-8121 A product may be sub- cy test eration time electrical stress and temperature stress. Usually, this EIAJ-SD-121: 201 jected to this test at a test is conducted under the following conditions. JIS C7021: B4 high temperature, low temperature, or high Ta: 25±5°C temperature and humid- Bias: I or P FMAX CMAX ity. High-tempera- Evaluates the resistivity of products to a high-storage tem- EIAJ-EDX-8121 ture storage perature for a long time. Usually, this test is conducted under EIAJ-SD-121: 115 the following conditions. JIS C7021: B10 IEC Pub68-2-2 Ta: TstgMAX Time: 1,000 hrs Low-tempera- Evaluates the resistivity of products to a low-storage temper- EIAJ-EDX-8121 ture storage ature for a long time. Usually, this test is conducted under the EIAJ-SD-121: 116 following conditions. JIS C7021: B12 IEC Pub68-2-1 Ta: TstgMIN Time: 1,000 hrs High-tempera- Evaluates the resistivity of products to a high-storage tem- EIAJ-EDX-8121 ture and high- perature and high storage humidity for a long time. Usually, EIAJ-SD-121: 117 humidity stor- this test is conducted under the following conditions. JIS C7021: B11 age IEC Pub68-2-3 Ta: 60°C Humidity: 90% Time: 1,000 hrs High-tempera- Evaluates the resistivity of products to a continuous electrical EIAJ-SD-121: 203 A product may be sub- ture reverse stress and temperature stress. JIS C7021: B8 jected to this test at a bias low temperature, high temperature, or high hu- midity. Note: The above testing conditions and testing times depend on the features of each product. 178 Product Quality Control and Reliability ■ Data from Reliability Tests The following tables show the results of the reliability tests of typical Transmissive Photomicrosensors with an Infrared LED conducted by OMRON. Providing this data does not imply that OMRON guarantees the specified reliability level. Typical Failure Rates (MTTF Data) EE-SX1041 (Transmissive Phototransistor Output) Failure Criteria Item Symbol Measuring Failure criteria conditions General test (see note) Life test Forward voltage V I = 30 mA 1.5 V max. 1.8 V max. F F Reverse current I V = 4 V 10 μA max. 20 μA max. R R Dark current I V = 10 V 0lx 200 nA max. 400 nA max. D CE Light current I I = 20 mA 0.5 mA min. Initial value × 0.7 min. L F V = 10 V 14 mA max. CE Note: Except life test. Test Results Test item Test conditions (see note 1) Number of Component hours Number of failures Failure rate (1/h) samples (h) (see note 2) 4 –5 Continuous operation Ta = 25°C, I = 50 mA 22 pcs 0 4.4 x 10 5.22 x 10 F 2000 h 4 –5 High-temperature stor- Ta = 100°C 22 pcs 0 4.4 x 10 5.22 x 10 age 2000 h 4 –5 Low-temperature stor- Ta = –30°C 22 pcs 0 4.4 x 10 5.22 x 10 age 2000 h 4 –5 High-temperature and Ta = 60°C, 90% 22 pcs 0 4.4 x 10 5.22 x 10 high-humidity storage 2000 h 4 –5 High-temperature re- Ta = 85°C, V = 30 V 22 pcs 0 4.4 x 10 5.22 x 10 CE verse bias 2000 h Temperature cycle –30°C (30 min) to 100°C (30 min) 22 pcs --- 0 --- 10 times 2 Shock resistance 11 pcs --- 0 --- 14,700 m/s , 0.5 ms, 3 times each in ±X, ±Y, and ±Z directions Vibration resistance 20 to 2,000 Hz, 1.5 mm or 11 pcs --- 0 --- 2 98 m/s each in X, Y, and Z direc- tions Note: 1. The tests after 1001 hours are for reference only. 2. Confidence level of 90%. Product Quality Control and Reliability 179 EE-SX1235A-P2 (Transmissive Phototransistor Output) Failure Criteria Item Symbol Measuring Failure criteria conditions General test (see note) Life test Forward voltage V I = 30 mA 1.5 V max. 1.8 V max. F F Reverse current I V = 4 V 10 μA max. 20 μA max. R R Dark current I V = 10 V 0lx 200 nA max. 400 nA max. D CE Light current I I = 20 mA 0.5 mA min. Initial value × 0.7 min. L F V = 5 V 14 mA max. CE Note: Except life test. Test Results Test item Test conditions (see note 1) Number of Component hours Number of failures Failure rate (1/h) samples (h) (see note 2) 4 –5 Continuous operation Ta = 25°C, I = 50 mA 22 pcs 0 4.4 x 10 5.22 x 10 F 2000 h 4 –5 High-temperature stor- Ta = 100°C 22 pcs 0 4.4 x 10 5.22 x 10 age 2000 h 4 –5 Low-temperature stor- Ta = –40°C 22 pcs 0 4.4 x 10 5.22 x 10 age 2000 h 4 –5 High-temperature and Ta = 60°C, 90% 22 pcs 0 4.4 x 10 5.22 x 10 high-humidity storage 2000 h 4 –5 High-temperature re- Ta = 85°C, V = 30 V 22 pcs 0 4.4 x 10 5.22 x 10 CE verse bias 2000 h Temperature cycle –40°C (30 min) to 100°C (30 min) 22 pcs --- 0 --- 10 times 2 Shock resistance 11 pcs --- 0 --- 294 m/s , 0.5 ms, 3 times each in ±X, ±Y, and ±Z directions 2 Vibration resistance 11 pcs --- 0 --- 5 to 50 Hz, 1.5 mm or 9.8 m/s each in X, Y, and Z directions Note: 1. The tests after 1001 hours are for reference only. 2. Confidence level of 90%. 180 Product Quality Control and Reliability EE-SX398 (Transmissive Photo-IC Output) Failure Criteria Item Symbol Measuring Failure criteria conditions General test (see note) Life test Forward voltage V I = 20 mA 1.5 V max. 1.8 V max. F F Reverse current I V = 4 V 10 μA max. 20 μA max. R R Low-level output V V = 16 V 0.4 V max. 0.48 V max. OL CC voltage I = 16 mA OL I = 0 mA F High-level output I V = 16 V 100 μA max. 200 μA max. OH CC current V = 28 V OUT I = 5 mA F Current consump- I V = 16 V 10 mA max. 12 mA max. CC CC tion LED current when I V = 16 V 5 mA max. Initial value × 1.3 max. FT CC output is OFF I = 16 mA OL Note: Except life test. Test Results Test item Test conditions (see note 1) Number of Component hours Number of failures Failure rate (1/h) samples (h) (see note 2) 4 –5 Continuous operation Ta = 25°C, I = 20 mA, V = 5 V 22 pcs 3.3 x 10 0 6.96 x 10 F CC 1500 h 4 –5 High-temperature stor- Ta = 100°C 22 pcs 3.3 x 10 0 6.96 x 10 age 2000 h 4 –5 Low-temperature stor- Ta = –40°C 22 pcs 3.3 x 10 0 6.96 x 10 age 2000 h 4 –5 High-temperature and Ta = 60°C, 90% 22 pcs 3.3 x 10 0 6.96 x 10 high-humidity storage 2000 h 4 –5 High-temperature re- Ta = 85°C, V = 30 V 22 pcs 3.3 x 10 0 6.96 x 10 CE verse bias 2000 h Temperature cycle –40°C (30 min) to 100°C (30 min) 22 pcs --- 0 --- 10 times 2 Shock resistance 14,700 m/s , 0.5 ms, 3 times 11 pcs --- 0 --- each in ±X, ±Y, and ±Z directions Vibration resistance 20 to 2,000 Hz, 1.5 mm or 11 pcs --- 0 --- 2 98 m/s each in X, Y, and Z direc- tions Note: 1. The tests after 1001 hours are for reference only. 2. Confidence level of 90%. Product Quality Control and Reliability 181 EE-SX4235A-P2 (Transmissive Photo-IC Output) Failure Criteria Item Symbol Measuring Failure criteria conditions General test (see note) Life test Current consump- I V = 5.5 V 16.5 mA max. 19.8 mA max. CC CC tion Low-level output V V = 4.5 V 0.35 V max. 0.42 V max. OL CC voltage I = 16 mA OUT with incident High-level output I V = 5.5 V 4.95 V max. 3.96 V max. OH CC voltage V = V OUT CC with incident R = 47 kΩ L Note: Except life test. Test Results Test item Test conditions (see note 1) Number of Component hours Number of failures Failure rate (1/h) samples (h) (see note 2) 4 –4 Continuous operation Ta = 25°C, V = 5 V 22 pcs 0 2.2 x 10 1.05 x 10 CC 1000 h 4 –4 High-temperature stor- Ta = 85°C 22 pcs 0 2.2 x 10 1.05 x 10 age 1000 h 4 –4 Low-temperature stor- Ta = –40°C 22 pcs 0 2.2 x 10 1.05 x 10 age 1000 h 4 –4 High-temperature and Ta = 60°C, 90% 22 pcs 0 2.2 x 10 1.05 x 10 high-humidity storage 1000 h Temperature cycle –40°C (30 min) to 85°C (30 min) 22 pcs --- 0 --- 10 times 2 Shock resistance 11 pcs --- 0 --- 294 m/s , 0.5 ms, 3 times each in ±X, ±Y, and ±Z directions 2 Vibration resistance 11 pcs --- 0 --- 5 to 50 Hz, 1.5 mm or 9.8 m/s each in X, Y, and Z directions Note: 1. The tests after 1001 hours are for reference only. 2. Confidence level of 90%. 182 Product Quality Control and Reliability Light Current (I ) Secular Changes of Phototransistor Output Photomicrosensor L Note: Secular changes in Photomicrosensor light current (with a phototransistor output circuit) and LED current (with a photo IC output circuit) during output ON/OFF are generally due to reductions in the LED emission intensity. The emission intensity of a GaAs infrared LED is shown in the graphs below. The information in these graphs applies to most of the GaAs infrared LEDs manufactured by OMRON. Because reductions in the emission intensity of an ordinary red LED tend to be larger than those of an infrared LED, the information in these graphs cannot be applied to ordinary red LEDs. For detailed information, consult your OMRON representative. Ta = 25°C, IF = 20 mA, n = 22 Max. Ave. Min. Energizing time (h) Ta = 25°C, IF = 50 mA, n = 22 Max. Ave. Min. Energizing time (h) Ta = 85°C, IF = 10 mA, n = 22 Max. Ave. Min. Energizing time (h) Product Quality Control and Reliability 183 IL change rate (%) IL change rate (%) IL change rate (%) Ta = −25°C, IF = 50 mA, n = 22 Max. Ave. Min. Energizing time (h) 184 Product Quality Control and Reliability IL change rate (%) Security Trade Control (As of March 2003) ■ Purpose of the Export Controls To preserve free trade and global security, it is necessary to prevent the proliferation, development, and production of weapons of mass destructions such as nuclear weapons, biological/chemical weapons, and missile systems. It is also necessary to prevent the accumulation of large amounts of conventional weapons or weapons–related materials to prevent regional disputes. ■ Contents of the Export Controls The following chart provides a simple summary of export controls. The 3 Export Controls Countries Controlled Type of Control Controlled Products/Technologies (List) Weapons of mass destruction or manufacturing equipment Non-proliferation All regions (including missiles and nuclear, bio- Control logical, and chemical weapons) All regions Conventional weapons and related Strict controls are enforced on Wassener materials (including advanced materi- exports to the 4 special-case Arrangement als, electronics, computers, and com- countries (Iran, Iraq, Libya, and munications equipment) North Korea). All regions General-purpose products related to Catch-all Controls weapons of mass destruction (Except those in Attached (in principle, all items) Table 4-2 (26 countries)) Development of nuclear weapons ■ Laws, Ordinances, and Regulations Related to Export Controls With respect to the Foreign Exchange Laws (Foreign Exchange and Foreign Trade Laws), etc., it is necessary to obtain approval from the Ministry of Economy, Trade, and Industry when exporting (or providing to a non–resident) any products or technologies* that require approval. If the product or technology is exported without approval or inappropriately, an individual will be charged with a criminal offense and a business will be subject to public penalties as outlined below. Note: The Export Regulations (Export Exchange Regulations), Foreign Exchange Regulations, and related laws and ordinances specify which products and technologies require approval for export. Laws, Ordinances, and Regulations Foreign Exchange Law: Approval is required from the Office of the Ministry of Economy, Trade, and Industry to export regulated products and technologies. Export Regulations: Attached Table 1 (regulated product list), Table 2 (list of treaty-regulated products), and Table 2-2 (UN regulated states) Foreign Exchange Regulations: Attached table (prescription of regulated technologies) If law or regulation is violated: Criminal Violation: Up to 5 years imprisonment and ¥2,000,000 fine Administrative Violation: Up to 3 years suspension of export rights Public Penalties: Damaged corporate reputation through bad press reports ■ Catch-all Controls Catch-all controls is the general terms used for export controls that apply to the export of all products and technologies when 1) it is know that they will be used for the development or manufacture of weapons of mass destruction or 2) the government has informed an individual or business of such use. Catch-all controls are replacing the previous list controls. Catch-all controls were implemented in Japan on April 1, 2002. Refer to the following websites for further information. Ministry of Economy, Trade, and Industry: http://www.meti.go.jp/policy/anpo/index.html CISTEC (Center for Information on Security Trade Control): http://www.cistec.or.jp Security Trade Control 185 ■ Compliance with the Regulations As a corporate citizen of Japan and the global community, OMRON has established a Compliance Program to assure compliance with the regulations outlined above in order to help maintain free trade and global security. We have also planned a training course on export controls. OMRON determines whether each of its products is subject to export controls and carefully controls transactions so that OMRON products are not exported inappropriately. ■ Request to Customers When exporting goods that require export approval, always obtain approval from an Official of the Ministry of Economy, Trade, and Industry. When dealing with products that are subject to export controls, take precautions to prevent incorrect exportation even when the products are resold. When exporting a controlled product, check the final application and end user to verify that the product will not be used in a weapon–related application such as a weapon itself or weapons research. Furthermore, always verify that the OMRON product will not be used in any case in a nuclear weapon, missile, chemical weapon, other weapon, or equipment used to manufacture these weapons. The limitations described above will be submitted to OMRON or an OMRON sales representative as an approval form or contract, so please fully understand and comply with these procedures. If you have any questions, please contact your OMRON representative for further details. These security procedures are based on domestic Japanese laws and apply to exports from Japan. 186 Security Trade Control READ AND UNDERSTAND THIS DOCUMENT Please read and understand this document before using the products. Please consult your OMRON representative if you have any questions or comments. WARRANTY OMRON’s exclusive warranty is that the products are free from defects in materials and workmanship for a period of one year (or other period if specified) from date of sale by OMRON. OMRON MAKES NO WARRANTY OR REPRESENTATION, EXPRESS OR IMPLIED, REGARDING NON-INFRINGEMENT, MERCHANTABILITY, OR FITNESS FOR PARTICULAR PURPOSE OF THE PRODUCTS. ANY BUYER OR USER ACKNOWLEDGES THAT THE BUYER OR USER ALONE HAS DETERMINED THAT THE PRODUCTS WILL SUITABLY MEET THE REQUIREMENTS OF THEIR INTENDED USE. OMRON DISCLAIMS ALL OTHER WARRANTIES, EXPRESS OR IMPLIED. LIMITATIONS OF LIABILITY OMRON SHALL NOT BE RESPONSIBLE FOR SPECIAL, INDIRECT, OR CONSEQUENTIAL DAMAGES, LOSS OF PROFITS OR COMMERCIAL LOSS IN ANY WAY CONNECTED WITH THE PRODUCTS, WHETHER SUCH CLAIM IS BASED ON CONTRACT, WARRANTY, NEGLIGENCE, OR STRICT LIABILITY. In no event shall responsibility of OMRON for any act exceed the individual price of the product on which liability is asserted. IN NO EVENT SHALL OMRON BE RESPONSIBLE FOR WARRANTY, REPAIR, OR OTHER CLAIMS REGARDING THE PRODUCTS UNLESS OMRON’S ANALYSIS CONFIRMS THAT THE PRODUCTS WERE PROPERLY HANDLED, STORED, INSTALLED, AND MAINTAINED AND NOT SUBJECT TO CONTAMINATION, ABUSE, MISUSE, OR INAPPROPRIATE MODIFICATION OR REPAIR. SUITABILITY FOR USE THE PRODUCTS CONTAINED IN THIS DOCUMENT ARE NOT SAFETY RATED. THEY ARE NOT DESIGNED OR RATED FOR ENSURING SAFETY OF PERSONS, AND SHOULD NOT BE RELIED UPON AS A SAFETY COMPONENT OR PROTECTIVE DEVICE FOR SUCH PURPOSES. Please refer to separate catalogs for OMRON's safety rated products. OMRON shall not be responsible for conformity with any standards, codes, or regulations that apply to the combination of products in the customer’s application or use of the product. At the customer’s request, OMRON will provide applicable third party certification documents identifying ratings and limitations of use that apply to the products. This information by itself is not sufficient for a complete determination of the suitability of the products in combination with the end product, machine, system, or other application or use. The following are some examples of applications for which particular attention must be given. This is not intended to be an exhaustive list of all possible uses of the products, nor is it intended to imply that the uses listed may be suitable for the products: • Outdoor use, uses involving potential chemical contamination or electrical interference, or conditions or uses not described in this document. • Nuclear energy control systems, combustion systems, railroad systems, aviation systems, medical equipment, amusement machines, vehicles, safety equipment, and installations subject to separate industry or government regulations. • Systems, machines, and equipment that could present a risk to life or property. Please know and observe all prohibitions of use applicable to the products. NEVER USE THE PRODUCTS FOR AN APPLICATION INVOLVING SERIOUS RISK TO LIFE OR PROPERTY WITHOUT ENSURING THAT THE SYSTEM AS A WHOLE HAS BEEN DESIGNED TO ADDRESS THE RISKS, AND THAT THE OMRON PRODUCT IS PROPERLY RATED AND INSTALLED FOR THE INTENDED USE WITHIN THE OVERALL EQUIPMENT OR SYSTEM. READ AND UNDERSTAND THIS DOCUMENT 187 PERFORMANCE DATA Performance data given in this document is provided as a guide for the user in determining suitability and does not constitute a warranty. It may represent the result of OMRON’s test conditions, and the users must correlate it to actual application requirements. Actual performance is subject to the OMRON Warranty and Limitations of Liability. CHANGE IN SPECIFICATIONS Product specifications and accessories may be changed at any time based on improvements and other reasons. It is our practice to change model numbers when published ratings or features are changed, or when significant construction changes are made. However, some specifications of the product may be changed without any notice. When in doubt, special model numbers may be assigned to fix or establish key specifications for your application on your request. Please consult with your OMRON representative at any time to confirm actual specifications of purchased products. DIMENSIONS AND WEIGHTS Dimensions and weights are nominal and are not to be used for manufacturing purposes, even when tolerances are shown. ERRORS AND OMISSIONS The information in this document has been carefully checked and is believed to be accurate; however, no responsibility is assumed for clerical, typographical, or proofreading errors, or omissions. PROGRAMMABLE PRODUCTS OMRON shall not be responsible for the user’s programming of a programmable product, or any consequence thereof. COPYRIGHT AND COPY PERMISSION This document shall not be copied for sales or promotions without permission. This document is protected by copyright and is intended solely for use in conjunction with the product. Please notify us before copying or reproducing this document in any manner, for any other purpose. If copying or transmitting this document to another, please copy or transmit it in its entirety. 188 READ AND UNDERSTAND THIS DOCUMENT OMRON ELECTRONICS LLC OMRON Corporation Authorized Distributor: One Commerce Drive Schaumburg, Industrial Automation Company IL 60173-5302 U.S.A. Sensing Devices Division H.Q. Tel: (1) 847-843-7900/Fax: (1) 847-843-7787 Industrial Sensors Division Shiokoji Horikawa, Shimogyo-ku, OMRON ASIA PACIFIC PTE. LTD. Kyoto, 600-8530 Japan No. 438A Alexandra Road # 05-05/08 (Lobby 2), Tel: (81)75-344-7022/Fax: (81)75-344-7107 Alexandra Technopark, Singapore 119967 Tel: (65) 6835-3011/Fax: (65) 6835-2711 Regional Headquarters OMRON EUROPE B.V. OMRON (CHINA) CO., LTD. Sensor Business Unit Room 2211, Bank of China Tower, Carl-Benz-Str. 4, D-71154 Nufringen, 200 Yin Cheng Zhong Road, © OMRON Corporation 2009 All Rights Reserved. Germany PuDong New Area, Shanghai, 200120, China In the interest of product improvement, Tel: (49) 7032-811-0/Fax: (49) 7032-811-199 Tel: (86) 21-5037-2222/Fax: (86) 21-5037-2200 specifications are subject to change without notice. OMRON Industrial Automation Global: www.ia.omron.com Cat. No. X062-E1-06