Photomicrosensor (Reflective) EE-SY1200 Be sure to read Precautions on page 24. ■ Dimensions ■ Features Ultra-compact model. Note: Detector center Emitter center PCB surface mounting type. Unless otherwise specified toleranc- es are ±0.15.High S/N ratio No burrs dimensions are included in 1.9 (0.7) (High light current / Low leakage current) outline dimensions. Recommended sensing distance = 1.0 to 4.0 mm The burrs dimensions are 0.15 MAX. (0.8) (1) (0.8) Diagonal line indicate the region is part Au plating area. ■ Absolute Maximum Ratings 3.2 (Ta=25°C) Recommended Soldering Pattern 2-1 2-1.7 2-1 Item Symbol Rated value Unit 1.1 *1 Emit- Forward current I F mA 50 ter *2 Pulse forward IFP mA 500 2-0.65 current 2-0.45 EK 1.2 2-0.65 Reverse voltage VR 4V Note:1. The shaded portion in the Detec- Collector-Emitter VCEO 30 V 0.7 above figure may cause tor voltage shorting. Do not wire in CA this portion. Emitter-Collector VECO5V voltage 2. The dimensional tolerance for the recommended sol- Collector current I C 20 mA dering pattern is ±0.1 mm. Terminal No. Name *1 Collector dissipa- PC 50 mW A Anode tion Internal Circuit K Cathode Operating temperature Topr −25 to +85 °C C A C Collector Storage temperature Tstg −40 to +100 °C E Emitter *3 Reflow soldering tempera- Tsol °C 240 E K ture *1 Refer to the temperature rating chart if the ambient temperature exceeds 25°C. *2 The pulse width is 10 μs maximum with a frequency of 100 Hz. *3 Complete soldering within 10 seconds for reflow soldering. ■ Electrical and Optical Characteristics (Ta=25°C) Item Symbol Value Unit Condition MIN. TYP. MAX. Emitter Forward voltage V --- 1.2 1.4 V I = 20 mA F F Reverse current I --- --- 10 μAVR = 4 V R Peak emission wavelength λ --- 940 --- nm --- P Detector Light current 1 I 1 200 --- 1000 μAI = 10 mA, V = 2 V, Aluminum-deposited L F CE 1 surface, d = 4 mm* Light current 2 I 2 150 --- --- μAI = 4 mA, V = 2 V, Aluminum-deposited L F CE 1 surface, d = 1 mm* Dark current I --- 2 200 nA VCE = 10 V, 0 lx D 2 Leakage current 1 I 1 --- --- 500 nA I = 10 mA, V = 2 V, with no reflection* LEAK F CE 2 Leakage current 2 I 2 --- --- 200 nA I = 4 mA, V = 2 V, with no reflection* LEAK F CE Collector-Emitter saturated V (sat) --- --- --- V --- CE voltage Peak spectral sensitivity λ --- 850 --- nm --- P wavelength 1 Rising time tr --- 30 --- μs V = 2 V, R = 1 kΩ, I = 100 μA, d = 1 mm* CC L L 1 Falling time t f --- 30 --- μs V = 2 V, R = 1 kΩ, I = 100 μA, d = 1 mm* CC L L *1. The letter “d” indicates the distance between the top surface of the sensor and the sensing object. *2. Depends on the installed condition of the Photomicrosensor, the detector may receive the sensor's LED light and/or the external light which is reflected from surroundings of the Photomicrosensor and /or the background object. Please confirm the condition of the Photomicrosensor by actual intended application prior to the mass production use. 154 EE-SY1200 Photomicrosensor (Reflective) ■ Engineering Data Forward Current vs. Collector Forward Current vs. Forward Voltage Light Current vs. Forward Current Dissipation Temperature Rating Characteristics (Typical) Characteristics (Typical) 60 60 3,000 Ta=25°C 50 50 2,500 Ta=-30°C VCE=2V d=1mm Ta=+25°C 40 40 2,000 Ta=+70°C 30 30 1,500 20 1,000 20 IF VCE=2V PC d=4mm 10 500 10 0 0 0 -40 -20 0 20 40 60 80 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0 5 10 15 20 Forward voltage VF (V) Ambient temperature Ta (°C) Forward current IF (mA) Light Current vs. Collector-Emitter Relative Light Current vs. Ambient Dark Current vs. Ambient Temperature Voltage Characteristics (Typical) Temperature Characteristics (Typical) Characteristics (Typical) 1,600 120 10,000 IF=10mA IF=10mA, d=1mm VCE=2V 1,400 1,000 110 1,200 100 IF=7mA, d=1mm 100 1,000 10 IF=15mA, d=4mm 800 90 1 IF=10mA, d=4mm 600 80 IF=4mA, d=1mm 0.1 400 IF=7mA, d=4mm 70 IF=2mA, d=1mm 0.01 200 IF=4mA, d=4mm IF=2mA, d=4mm 0 0.001 60 0246 8 10 -40 -20 0 20 40 60 80 100 -30 -20 -10 010 20 30 40 50 60 70 80 90 Collector-Emitter voltage VCE (V) Ambient temperature Ta (°C) Ambient temperature Ta (°C) Response Time vs. Load Resistance Sensing Distance Characteristics Sensing Position Characteristics Characteristics (Typical) (Typical) (Typical) 120 10,000 100 Aluminum-deposited surface White Black 90 d d 100 80 tr L 1,000 IF=4mA, 10mA - 0 + 70 VCE=10V 80 60 IF=10mA tf VCE=2V 100 50 60 d=4mm 40 40 30 10 IF=4mA 20 20 VCE=2V d=1mm 10 1 0 0 0.1 1 10 100 01 0.5 1.52345 2.5 3.5 4.5 -6 -5 -4 -3 -2 -1 0 1 2 3 4 Card moving distance L (mm) Load resistance RL (kΩ) Distance d (mm) Sensing Position Characteristics Response Time Measurement Light Current Measurement Setup (Typical) Circuit Diagram 120 Input White Black 0 d t 100 Output 90% L Aluminum-deposited surface 0 10% - 0 + t 80 t r t f 60 d Glass IL IF=10mA Input VCC VCE=2V 40 d=4mm IF=4mA Output VCE=2V 20 Sensor d=1mm RL 0 -6 -5 -4 -3 -2 -1 0 1 2 3 4 Card moving distance L (mm) EE-SY1200 Photomicrosensor (Reflective) 155 Forward current IF (mA) Response time tr,tf (μs) Light current IL (mA) Collector dissipation PC (mW) Relative light current IL (%) Relative light current IL (%) Relative light current IL (%) Forward current IF (mA) Dark current ID (nA) Light current IL (μA) Relative light current IL (%) 0.8 0.6 0.4 0.2 0.8 0.6 0.4 0.2 ■ Tape and Reel Reel Dimension (Unit: mm) ±0.5 φ13 ±0.8 φ21 ±0.5 2 ±1 φ60 +1 13 0 0 180 -3 ±1 15.4 Tape Dimension (Unit: mm) 4 2 4 φ1.5 1.75 5.5 12 3.45 0.3 1.35 2.15 Part Mounting Direction The devices are oriented in the rectangular holes in the carrier tape so that the edge with the LED faces the round feeding holes. E C Pull-out direction K A Tape Quantity 2,000 pcs./reel 156 EE-SY1200 Photomicrosensor (Reflective) 0.8 0.6 0.4 0.2 0.8 0.6 0.4 0.2 Treatment after Opening ■ Precautions to be taken on mounting 1. Reflow soldering must be done within 48 hours stored at the con- Temperature Profile ditions of humidity 60%RH or less and temperature 5 to 25°C. 2. In case of long time storage after open, please mount at the con- The reflow soldering can be implemented in two times complying ditions of humidity 70%RH or less and temperature 5 to 30°C with the following diagram. within 1 week by using dry box or resealing with desiccant in All the temperatures in the product must be within the diagram. moisture-proof bag by sealer. 240°C MAX. Baking before Mounting 1to 4°C/sec 200°C In case that it could not carry out the above treatment, it is able to mount by baking treatment. 1to 4°C/sec 10 sec MAX. However baking treatment shall be limited only 1 time. 160°C MAX. Recommended conditions : 60°C, 12 to 24 hours (reeled one) 50 sec MAX. 100°C, 8 to 24 hours (loose one) 1to 4°C/sec 120 sec MAX. Time (sec) Manual soldering The manual soldering cannot be applied to the products. There is a possibility that the housing is deformed and/or Au plating is peeled off by heat. Other Notes The use of infrared lamp causes the temperature at the resin to rise particularly too high. All the temperatures in the product must be within the above diagram. Do not immerse the resin part into the solder. Even if within the above temperature diagram, there is a possibility that the gold wire in the products is broken in case that the deformation of PCB gives the stress to the product terminals. Please confirm the conditions of the reflow soldering fully by actual solder reflow machine prior to the mass production use. ■ Storage and Handling after Opening Storage Conditions In order to avoid the absorption of moisture, the products shall be stored in a dry box with desiccant or in the following conditions. Storage temp. : 5 to 30°C Storage humidity : 70%RH or less EE-SY1200 Photomicrosensor (Reflective) 157 Temperature (°C)