OMRON ELECTRONIC COMPONENTS EE-SY169
Specifications
Manufacturer
Omron Electronic Components
Manufacturers Part #
EE-SY169
Lead Time
11 Week Lead Time
Industry Aliases
EE-SY169
Sub-Category
Photointerrupters
Factory Pack Quantity
100
Datasheet
Extracted Text
Photomicrosensor (Reflective) EE-SY169 Be sure to read Precautions on page 24. ■ Dimensions ■ Features High-quality model with plastic lenses. Note: All units are in millimeters unless otherwise indicated. Highly precise sensing range with a tolerance of ±0.6 mm horizon- tally and vertically. With a red LED sensing dyestuff-type inks. Limited reflective model. Recommended sensing distance = 4.0 mm For lesser LED forward current the EE-SY169B would be a better choice. ■ Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rated value Surface A Emitter Forward current I 40 mA F (see note 1) Two, C0.2 1±0.1 dia. 1±0.1 dia. Pulse forward cur- I 300 mA FP rent (see note 2) (see note) (see note) Reverse voltage V 3 V R Detector Collector–Emitter V 30 V CEO voltage Emitter–Collector V --- ECO voltage Collector current I 20 mA C Note: These dimensions are for Collector dissipa- P 100 mW Internal Circuit C the surface A. Other lead tion (see note 1) wire pitch dimensions are for A C Ambient tem- Operating Topr 0°C to 70°C the housing surface. perature Storage Tstg –20°C to 80°C Unless otherwise specified, the Soldering temperature Tsol 260°C tolerances are as shown below. K E (see note 3) Dimensions Tolerance 3 mm max. ±0.3 Note: 1. Refer to the temperature rating chart if the ambient temper- Terminal No. Name ature exceeds 25°C. 3 < mm ≤ 6 ±0.375 A Anode 2. The pulse width is 10 μs maximum with a frequency of 6 < mm ≤ 10 ±0.45 K Cathode 100 Hz. 10 < mm ≤ 18 ±0.55 C Collector 3. Complete soldering within 10 seconds. 18 < mm ≤ 30 ±0.65 E Emitter ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition Emitter Forward voltage V 1.85 V typ., 2.3 V max. I = 20 mA F F Reverse current I 0.01 μA typ., 10 μA max. V = 3 V R R Peak emission wavelength λ 660 nm typ. I = 20 mA P F Detector Light current I 160 μA min., 2,000 μA max. I = 20 mA, V = 5 V L F CE White paper with a reflection ratio of 90%, d = 4 mm (see note) Dark current I 2 nA typ., 200 nA max. V = 5 V, 0 lx D CE Leakage current I 2 μA max. I = 20 mA, V = 5 V with no reflection LEAK F CE Collector–Emitter saturated V (sat) --- --- CE voltage Peak spectral sensitivity wave- λ 850 nm typ. V = 5 V P CE length Rising time tr 30 μs typ. V = 5 V, R = 1 kΩ, I = 1 mA CC L L Falling time tf 30 μs typ. V = 5 V, R = 1 kΩ, I = 1 mA CC L L Note: The letter “d” indicates the distance between the top surface of the sensor and the sensing object. 160 EE-SY169 Photomicrosensor (Reflective) ■ Engineering Data Forward Current vs. Collector Light Current vs. Forward Current Light Current vs. Collector−Emitter Dissipation Temperature Rating Characteristics (Typical) Voltage Characteristics (Typical) Ta = 25°C d = 4 mm Sensing object: White I = 40 mA F d = 4 mm paper with a reflection V = 5 V CE factor of 90% I = 30 mA F I = 20 mA F I = 10 mA F I = 5 mA F Collector−Emitter voltage V (V) CE Ambient temperature Ta (°C) Forward current I (mA) F Relative Light Current vs. Dark Current vs. Ambient Response Time vs. Load Ambient Temperature Temperature Characteristics Resistance Characteristics Characteristics (Typical) (Typical) (Typical) Vcc = 5 V V = 10 V I = 20 mA CE F Ta = 25°C 0lx V = 5 V CE Ambient temperature Ta (°C) Ambient temperature Ta (°C) Load resistance R (kΩ) L Sensing Distance Characteristics Sensing Position Characteristics Sensing Position Characteristics (Typical) (Typical) (Typical) I = 20 mA F I = 20 mA Ta = 25°C F V = 5 V CE V = 5 V CE I = 20 mA F Ta = 25°C Ta = 25°C V = 10 V CE d = 4 mm Sensing object: 1 White paper with Sensing object: Sensing object: White a reflection factor White paper with a paper with a reflection of 90% reflection factor of factor of 90% d1 = 3.5 mm 90% d1 = 4.0 mm Sensing d1 = 4.5 mm d = 0 object Direction Sen- Direction sor Sen- sor Distance d (mm) Distance d (mm) Distance d (mm) 2 2 Sensing Angle Characteristics Sensing Angle Characteristics Response Time Measurement (Typical) (Typical) Circuit Ta = 25° Ta = 25°C d = 3 mm I = 20 mA V F CE d = 4 mm = 10 V I = 20 mA Input F d = 5 mm Sensing object: V = 10 V CE White paper with 90 % a reflection fac d = 3 mm Output tor of 90% d = 4 mm 10 % d = 5 mm Input Output Sensing object: White paper with a reflection factor of 90% Angle deviation θ (°) Angle deviation θ (°) EE-SY169 Photomicrosensor (Reflective) 161 Light current I (μA) Relative light current I (%) L L Forward current I (mA) Relative light current I (%) F L Collector dissipation Pc (mW) Dark Current I (nA) D Light current I (μA) Relative light current I (%) L L Relative light current I (%) L Light current I (μA) Response time tr, tf (μs) L Relative light current I (%) L
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