Photomicrosensor (Reflective) EE-SY310/-SY410 Be sure to read Precautions on page 24. ■ Dimensions ■ Features Incorporates an IC chip with a built-in detector element and ampli- Note: All units are in millimeters unless otherwise indicated. fier. Incorporates a detector element with a built-in temperature com- Five, 0.5 pensation circuit. Compact reflective model with a molded housing. +0.2 4.6A wide supply voltage range: 4.5 to 16 VDC −0.3 Directly connects with C-MOS and TTL. Dark ON model (EE-SY310) Two. R1.5 Two. R2 Light ON model (EE-SY410) Recommended sensing distance = 5.0 mm ■ Absolute Maximum Ratings (Ta = 25°C) Five, 0.3 Item Symbol Rated value Emitter Forward current I 50 mA F (see note 1) 15 to 18 Reverse voltage V 4 V R 17 to 24 Pulse forward I 1 A FP current (see note 2) Detector Power supply V 16 V CC voltage Internal Circuit Output voltage V 28 V A V OUT O Output current I 16 mA OUT Unless otherwise specified, the Permissible out- P 250 mW OUT K G tolerances are as shown below. put dissipation (see note 1) Ambient tempera- Operating Topr –40°C to 75°C Terminal No. Name Dimensions Tolerance ture Storage Tstg –40°C to 85°C A Anode 3 mm max. ±0.2 Soldering temperature Tsol 260°C K Cathode 3 < mm ≤ 6 ±0.24 (see note 3) V Power supply 6 < mm ≤ 10 ±0.29 (Vcc) Note: 1. Refer to the temperature rating chart if the ambient temper- ature exceeds 25°C. 10 < mm ≤ 18 ±0.35 O Output (OUT) 2. The pulse width is 10 μs maximum with a frequency of G Ground (GND) 18 < mm ≤ 30 ±0.42 100 Hz. 3. Complete soldering within 10 seconds. ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 20 mA F F Reverse current I 0.01 μA typ., 10 μA max. V = 4 V R R Peak emission wavelength λ 920 nm typ. I = 20 mA P F Detector Low-level output voltage V 0.12 V typ., 0.4 V max. Vcc = 4.5 to 16 V, I = 16 mA, OL OL without incident light (EE-SY310), with incident light (EE-SY410) (see notes 1 and 2) High-level output voltage V 15 V min. Vcc = 16 V, R = 1 kΩ, OH L with incident light (EE-SY310), without incident light (EE-SY410) (see notes 1 and 2) Current consumption I 3.2 mA typ., 10 mA max. Vcc = 16 V CC Peak spectral sensitivity λ 870 nm typ. V = 4.5 to 16 V P CC wavelength LED current when output is OFF I 6 mA typ., 15 mA max. V = 4.5 to 16 V FT CC LED current when output is ON Hysteresis ΔH 17% typ. V = 4.5 to 16 V CC Response frequency f 50 Hz min. V = 4.5 to 16 V, I = 15 mA, I = 16 mA CC F OL Response delay time t (t )3 μs typ. V = 4.5 to 16 V, I = 15 mA, I = 16 mA PLH PHL CC F OL Response delay time t (t ) 20 μs typ. V = 4.5 to 16 V, I = 15 mA, I = 16 mA PHL PLH CC F OL 174 EE-SY310/-SY410 Photomicrosensor (Reflective) Note: 1. With incident light" denotes the condition whereby 4. The value of the response frequency is measured by rotating the light reflected by white paper with a reflection the disk as shown below. factor of 90% at a sensing distance of 5 mm is received by the photo IC when the forward current (IF) of the LED is 20 mA. 200 mm dia. 15 mm 2. Sensing object: White paper with a reflection factor of 90% at a sensing distance of 5 mm. 15 mm 15 mm 3. Hysteresis denotes the difference in forward LED current value, expressed in percentage, calculated 5 mm from the respective forward LED currents when the 5. The following illustrations show the definition of response delay photo IC is turned from ON to OFF and when the time. The value in the parentheses applies to the EE-SY410. photo IC is turned from OFF to ON. Input Input Output Output (tPLH) (tPHL)( (tPHL)tPLH) EE-SY310 EE-SY410 ■ Engineering Data Note: The values in the parentheses apply to the EE-SY410. Forward Current vs. Collector Forward Current vs. Forward LED Current vs. Supply Voltage Dissipation Temperature Rating Voltage Characteristics (Typical) (Typical) Ta = 25°C R = 1 kΩ L Ta = −30°C I OFF (I ON) Ta = 25°C FT FT Ta = 70°C I ON (I OFF) FT FT Supply voltage V (V) Forward voltage V (V) CC F Ambient temperature Ta (°C) LED Current vs. Ambient Low-level Output Voltage vs. Low-level Output Voltage vs. Temperature Characteristics Output Current (Typical) Ambient Temperature (Typical) Characteristics (Typical) Ta = 25°C V = 5 V CC V = 5 V CC V = 5 V R = 330 Ω CC L I = 0 mA (15 mA) F I = 0 mA (15 mA) F I OFF (I ON) FT FT I = 16 mA OL I ON (I OFF) FT FT I = 5 mA OL Output current I (mA) Ambient temperature Ta (°C) OUT Ambient temperature Ta (°C) Current Consumption vs. Supply Response Delay Time vs. Forward Sensing Position Characteristics Voltage (Typical) Current (Typical) (Typical) I = 20 mA F V = 5 V VCC = 5 V CC Ta = 25°C Ta = 25°C R = 330 Ω I = 0 mA (15 mA) L F Sensing object: White paper with a reflection Ta = 25°C factor of 90% VOUT (EE-SY3@@) VOUT (EE-SY4@@) tPHL (tPLH) Operate Release Supply voltage V (V) Forward current I (mA) CC F Distance d (mm) 1 EE-SY310/-SY410 Photomicrosensor (Reflective) 175 Current consumption Icc (mA) Forward current I (mA) LED current I (mA) F FT Output allowable dissipation P (mW) C Low level output voltage V (V) OL Forward current I (mA) Response delay time t , t (μs) F PHL PLH Distance d (mm) 2 Low level output voltage V (V) OL LED current I (mA) FT