Electronics Finder

Description

Photodarlington IR Chip Silicon 2-Pin PLCC
OP580DA

Part Number

OP580DA

Price

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Manufacturer

TT ELECTRONICS

Lead Time

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Category

Optoelectronics and Displays » Phototransistor

Specifications

Manufacturer

TT electronics

Manufacturers Part #

OP580DA

Industry Aliases

OP580DA

Sub-Category

Phototransistors

Brand

Optek Technology

Packaging

Tape and Reel

Factory Pack Quantity

2000

Datasheet

OP580DA.pdf

1098 KiB

Download

Extracted Text

 Wide acceptance angle  High Current Gain  Fast Response Time  Plastic leadless chip carrier (PLCC) The OP580DA is an NPN silicon phototdarlington mounted in a miniature SMD package. This device has a flat window lens, which enables a wide acceptance angle. It is packaged in a plastic leadless chip carrier which is compatible with most automated mounting equipment. OP580DA are 100% production tested using infrared light for close correlation with Optek GaAs and GaAlAs emitters. Photo darlington devices are normally used in application where light signals are low and more current gain is needed than is possible with phototransistors. OP580DA is mechanically and spectrally matched to the OP280 series infrared LEDs. Ordering Information  Non-contact position sensing Part Viewing Lead  Datum detection Number Sensor Angle Length  Machine automation OP580DA Photo Darlington 100° N/A  Optical encoders OP580DA Polarity Mark 1 2 Pin # Transistor 1 Collector 2 Emitter [MILLIMETERS] DIMENSIONS ARE IN: INCHES RoHS o o Storage Temperature Range -40 C to +100 C o o Operating Temperature Range -25 C to +85 C (1) Lead Soldering Temperature 260° C Collector-Emitter Voltage 35 V Emitter-Collector Voltage 5 V Collector Current 32 mA (2) Power Dissipation 100 mW 2(3) I On-State Collector Current 10.0 - - mA V = 5.0 V, E = 0.15 mW/cm C(ON) CE E 2(3) V Collector-Emitter Saturation Voltage - - 1.7 V I = 1 mA, E = 0.15 mW/cm CE(SAT) C E (4) I Collector-Emitter Dark Current - - 1.0 µA V = 5.0 V, E = 0 CE0 CE E V Collector-Emitter Breakdown Voltage 35 - - V I = 400 µA (BR)CEO C V Emitter-Collector Breakdown Voltage 5 - - V I = 100 µA (BR)ECO E t , t Rise Time , Fall Time - 50 - µs I = 1 mA, R = 1 KΩ r f C L Notes: 1. Solder time less than 5 seconds at temperature extreme. 2. Derate linearly at 1.33 mW/° C above 25° C. 3. E is an unfiltered GaAs LED with a peak emission wavelength of 935 nm and a radiometric intensity level which varies less than 10% over the E(APT) entire lens surface of the phototransistor being tested. (0.04 T -3/4) 4. To calculate typical collector dark current in µA, use the formula I = 10 where T is the ambient temperature in ° C. CEO A A Normalized Collector Current Vs Angular Displacement Relative Response vs Wavelength Relative Response vs Angular Position 1 1 100 100 0.9 0.9 0.8 80 0.8 80 0.7 0.7 0.6 0.6 60 60 0.5 0.5 0.4 0 40 .4 40 0.3 0.3 20 0.2 0 20 .2 0.1 0.1 0 0 0 0 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 -90 -60 -30 0 30 60 90 400 500 600 700 800 900 1000 1100 Angular Displacement (Deg) Angular Position (Degrees) Wavelength (nm) 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 Relative Response (%) Relative Response (%) Normalized Collector Current Relative On-State Collector Current vs Relative Collector Current-I (mA) C Temperature 2 ON-STATE COLLECTOR CURRENT Vs IRRADIANCE vs. Irradiance-Ee (mW/cm ) 1.40 140 40 1.6 2 Normalized at Ee = 1mW/cm Conditions: VCE = 5V, Normalized at T = 25° C . A 1.30 λ = 935nm, TA = 25 °C 130 35 1.4 Conditions: V = 5 V, CE λ = 935 nm, T = 25° C A 1.20 1.2 120 30 1.10 1.0 110 25 1.00 100 0.8 20 0.90 0.6 90 15 0.80 0.4 80 10 0.70 0.2 70 5 0.60 0.0 0 1 2 3 4 5 6 7 8 -25 0 25 50 75 100 Ee - IRRADIANCE (mW/cm2) 0 0.5 1.0 1.5 2.0 -25 0 25 50 75 100 2 Irradiance- Ee (mW/cm ) Temperature (°C) Relative On-State Collector Current Collector-Emitter Dark Current vs ON-STATE COLLECTOR CURRENT Vs COLLECTOR TO EMITTER VOLTAGE Collector Dark Current Vs. Ambient Temperature vs. Collector-Emitter Voltage OP520 Temperature 1000 1000 1.4 30 2 1.2 mW/cm 2 Conditions: Ee = 0 mW/cm V = 10V CE 1.2 25 2 1.0 mW/cm 100 100 1.0 20 2 0.8 mW/cm 1mW/cm2 0.8 17.5 2mW/cm2 2 10 3mW/cm2 10 0.6 mW/cm 4mW/cm2 5mW/cm2 15 0. .6 0 6mW/cm2 2 0.4 mW/cm 0.4 12.5 1 1 2 0.2 mW/cm 0.2 10.0 0 0 0.0 -20 5 30 55 80 0.00 0.10 0.20 0.30 0.40 0.50 -25 0 25 50 75 100 TA - Ambient Temperature (°C) 0 0.5 1.0 1.5 2.5 3 VCE - COLLECTOR TO EMITTER VOLTAGE (V) Temperature (°C) Collector-Emitter Voltage (V) Collector-Emitter Dark Current (nA) Relative Collector Current—I (mA) C ICEO - Collector Dark Current (nA) (Log Scale) IC(ON) -ON-STATE COLLECTOR CURRENT (ma) Relative Collector Current (%) I - On-State Collector Current (mA) C(ON) IC(ON) - ON-STATE COLLECTOR CURRENT (mA)

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Electronics Finder' parent company, GID Industrial, specializes in procuring industrial parts. We know where to find the rare and obsolete equipment that our customers need in order to get back to business. We stand apart from our competition through our commitment to quality, and look forward to the opportunity to show you how.

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When I can't find an obsolete part, I first call GID and they'll come up with my parts every time. Great customer service and follow up as well. Scott emails me from time to time to touch base and see if we're having trouble finding something.....which is often with our 25 yr old equipment.

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