Manufacturers
TT ELECTRONICS OP800B
Description
Phototransistor Chip Silicon 890nm 3-Pin TO-18
OP800B
Part Number
OP800B
Price
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Manufacturer
TT ELECTRONICS
Lead Time
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Category
Optoelectronics and Displays » Phototransistor
Specifications
Manufacturer
TT electronics
Manufacturers Part #
OP800B
Industry Aliases
OP800B
Sub-Category
Phototransistors
Brand
Optek Technology
Packaging
Bulk
Factory Pack Quantity
500
Datasheet
Extracted Text
Narrow receiving angle Suitable for applications from 400nm to 1100 Variety of sensitivity ranges TO-18 hermetically sealed package Enhanced temperature range Base lead connection The OP800 Series device consist of a NPN silicon phototransistor mounted in a hermetically sealed package. The narrow receiving angle provides excellent on-axis coupling. TO-18 package offer high power dissipation and hostile environment operation. The base lead is bonded to enable conventional transistor biasing. Industrial and commercial electronics Distance sensing Harsh environment Photointerrupters RoHS Collector-Base Voltage 30 V 30 V Collector-Emitter Voltage Emitter-Base Voltage 5 V 5 V Emitter-Collector Voltage Continuous Collector Current 50 mA o o -65 C to +150 C Storage Temperature Range o o Operating Temperature Range -65 C to +125 C (2) Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron] 260° C (3) Power Dissipation 250 mW Notes: 1. RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. 2. Derate linearly 2.5 mW/° C above 25° C. 3. Junction temperature maintained at 25° C. 2 4. Light source is a GaAIAs LED, 890 nm peak emission wavelength, providing a 0.5 mW/cm radiant intensity on the unit under test. The intensity level is not necessarily uniform over the lens area of the unit under test. On-State Collector Current OP800D 0.45 - - mA (3) I OP800C 0.90 - 3.60 mA C(ON) 2(4 ) OP800B 1.80 - 5.40 mA V = 5 V, E = 0.5 mW/cm CE E OP800A 3.60 - - mA I Collector Dark Current - - 100 nA V = 10 V, E = 0 CEO CE E V Collector-Emitter Breakdown Voltage 30 - - V I = 100 µA (BR)CEO C V Collector-Base Breakdown Voltage 30 - - V I = 100 µA (BR)CBO C V Emitter-Collector Breakdown Voltage 5.0 - - V I = 100 µA (BR)ECO E V Emitter-Base Breakdown Voltage 5.0 - - V I = 100 µA (BR)EBO E t Rise Time - 7.0 - µs r V = 5 V, I = 0.80 mA, CC C R = 100 Ω (See Test Circuit) L t Fall Time - 7.0 - µs f
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