TT ELECTRONICS OPB70CWZ
Specifications
Manufacturer
TT electronics
Manufacturers Part #
OPB70CWZ
Industry Aliases
OPB70CWZ
Sub-Category
Photointerrupters
Brand
Optek Technology
Packaging
Bulk
Factory Pack Quantity
25
Datasheet
Extracted Text
WZ Version The OPB703, OPB704 and OPB705 consist of an Infrared (890nm) Light Emitting Diode (LED) and a NPN silicon Phototransistor, mounted side-by-side on converging optical axes in a black plastic housing and are designed for PCBoard mounting. The OPB703WZ, OPB704WZ, OPB705WZ and OPB70BWZ are designed for remote mounting utilizing interconnect wires of UL approved 26 AWG, 24” (61.0cm) minimum length, stripped and tinned. The OPB70AWZ consists of an Infrared (890nm) Light Emitting Diode (LED) and a NPN silicon Photodarlington, mounted side-by- side on converging optical axes in a black plastic housing and is designed for remote mounting utilizing interconnect wires of UL approved 26 AWG, 24” (61.0cm) minimum length, stripped and tinned. The OPB70CWZ through OPB70FWZ consist of a Visible (Red 640nm) Light Emitting Diode (LED) and a NPN silicon Phototransistor or Rbe Phototransistor, mounted side-by-side on converging optical axes in a black plastic housing and are designed for remote mounting utilizing interconnect wires of UL approved 26 AWG, 24” (61.0cm) minimum length, stripped and tinned. Various lens options are available: No lens for the (OPB703, OPB703WZ), blue window for dust protection for the (OPB704, OPB704WZ, OPB70BWZ, OPB70HWZ) and aperture lens for improved resolution for the (OPB705, OPB705WZ, OPB70AWZ, OPB70CWZ, OPB70DWZ). The OPB704G and OPB704GWZ offers excellent protection for dirty environments. The phototransistor responds to illumination from the emitter when a reflective object passes within the field of view centered typically at 0.15” (3.8 mm). Ordering Information Custom electrical, wire, cabling and connectors are available. Contact Part LED Peak Detector Optical Cover Lead or Wire your local representative or OPTEK OPB703 0.160" Leads for more information. None OPB703WZ 24" / 26 AWG Wire OPB704 0.160" Leads OPB704WZ 24" / 26 AWG Wire Blue OPB70HWZ Transistor 24” / 26 AWG Wire Window OPB704G 890 nm 0.160" Leads OPB704GWZ 24" / 26 AWG Wire OPB705 0.160" Leads OPB705WZ Aperture OPB70AWZ Darlington OPB70BWZ Rbe Transistor Blue Window OPB70CWZ Rbe Transistor 24" / 26 AWG Wire Aperture OPB70DWZ Transistor 640 nm OPB70EWZ Rbe Transistor Clear Window OPB70FWZ Transistor RoHS OPB703, OPB704, OPB705 OP- B703, OP- 1 4 2 3 OPB703WZ, OPB704WZ, OPB705WZ, OPB70AWZ, OPB70BWZ, OPB70CWZ, OPB70DWZ An- Collector Collector Anode Anode Collector Emitter Cathode Cath- Emitter Cathode Emitter OPB704G OPB704GWZ Absolute Maximum Ratings (T =25°C unless otherwise noted) A Storage Temperature Range -40°C to +80° C (1) Lead Soldering Temperature [1/16 inch (1.6 mm) from the case for 5 sec. with soldering iron] 240° C Input Diode Forward DC Current 40 mA Reverse DC Voltage 2 V (2) Power Dissipation 100 mW Output Photodetector Collector-Emitter Voltage Phototransistor 30 V Photodarlington 15 V Emitter-Collector Voltage 5 V Collector DC Current 25 mA (2) Power Dissipation 100 mW Notes: (1) RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. (2) For OPB703WZ, OPB704WZ, OPB705WZ, OPB70BWZ, OPB704G, OPB704GWZ and OPB70HWZ derate linearly 1.82 mW/° C above 25° C. Electrical Characteristics (T = 25° C unless otherwise noted) A (OPB703, OPB703WZ, OPB704, OPB704WZ, OPB705, OPB705WZ, OPB704G, OPB704GWZ, OPB70HWZ) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Input Diode (See OP265 for additional information — for reference only) V Forward Voltage - - 1.7 V I = 40mA F F I Reverse Current - - 100 µA V = 2 V R R Output Phototransistor (See OP505 for additional information — for reference only) V Collector-Emitter Breakdown Voltage 30 - - V I = 100 µA (BR)CEO CE V Emitter-Collector Breakdown Voltage 5 - - V I = 100µA (BR)ECO EC I Collector Dark Current - - 250 nA V = 10 V, I = 0, E =0 CEO CE F E Coupled On-State Collector Current OPB70HWZ 0.60 - 3.5 (4)(6) OPB703, OPB703WZ 0.30 - 2.5 V = 5 V, I = 40mA , d = 0.15” CE F I C(ON) mA OPB704, OPB704WZ 0.20 - 2.5 (4)(6) OPB704G, OPB704GWZ 0.50 - 6.0 V = 5 V, I = 40mA , d = 0.20” CE F Crosstalk I OPB703, OPB703WZ - - 20 CX (5) µA V = 5 V, I = 40mA CE F OPB704, OPB704WZ, OPB70HWZ - - 20 Notes: (1) RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. (2) For OPB703, OPB704 and OPB705, derate linearly 1.67 mW/° C above 25° C. (3) For OPB703WZ, OPB704WZ, OPB705WZ, OPB70BWZ, OPB704G, OPB704GWZ, OPB70HWZ, OPB70AWZ, OPB70CWZ, OPB70DWZ, OPB70EWZ, and OPB70FWZ derate linearly 1.82 mW/° C above 25° C. (4) The distance from the assembly face to the reflective surface is d. (5) Crosstalk (I ) is the collector current measured with the indicated current in the input diode and with no reflecting surface. CX (6) Measured using Eastman Kodak neutral white test card with 90% diffuse reflectance as a reflecting surface. Reference: Eastman Kodak, Cata- log # E 152 7795. (7) All parameters tested using pulse techniques. Electrical Characteristics (T = 25° C unless otherwise noted) A (OPB70AWZ) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Input Diode (See OP265 for additional information — for reference only) V Forward Voltage - - 1.7 V I = 40mA F F I Reverse Current - - 100 µA V = 2 V R R Output PhotoDarlington (See OP535 for additional information — for reference only) V Collector-Emitter Breakdown Voltage 15 - - V I = 1.0 mA, E =0 (BR)CEO CE E V Emitter-Collector Breakdown Voltage 5 - - V I = 100µA, E =0 (BR)ECO EC E I Collector Dark Current - - 250 nA V = 10 V, I = 0, E =0 CEO CE F E Coupled (1)(3) I On-State Collector Current 5.0 - 26.0 mA V = 5 V, I = 40mA , d = 0.15” C(ON) CE F (1)(3) V Saturation Voltage - - 1.15 V I = 400 µA, I = 40mA , d = 0.15” (SAT) C F (2) I Crosstalk - - 25 µA V = 5 V, I = 40mA CX CE F Notes: (1) The distance from the assembly face to the reflective surface is d. (2) Crosstalk (I ) is the collector current measured with the indicated current in the input diode and with no reflecting surface. CX (3) Measured using Eastman Kodak neutral white test card with 90% diffuse reflectance as a reflecting surface. Reference: Eastman Kodak, Catalog # E 152 7795. Electrical Characteristics (T = 25° C unless otherwise noted) A (OPB70BWZ) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Input Diode (See OP265 for additional information — for reference only) V Forward Voltage - - 1.7 V I = 40mA F F I Reverse Current - - 100 µA V = 2 V R R Output Phototransistor (See OP705 for additional information — for reference only) V Collector-Emitter Breakdown Voltage 30 - - V I = 100 µA (BR)CEO CE V Emitter-Collector Breakdown Voltage 0.4 - - V I = 100µA (BR)ECO EC I Collector Dark Current - - 100 nA V = 10 V, I = 0, E =0 CEO CE F E Coupled On-State Collector Current (1)(3) I 0.50 - 3.0 mA V = 5 V, I = 40mA , d = 0.15” C(ON) CE F OPB70BWZ Crosstalk (2) I - - 5 µA V = 5 V, I = 40mA CX CE F OPB70BWZ Notes: (1) The distance from the assembly face to the reflective surface is d. (2) Crosstalk (I ) is the collector current measured with the indicated current in the input diode and with no reflecting surface. CX (3) Measured using Eastman Kodak neutral white test card with 90% diffuse reflectance as a reflecting surface. Reference: Eastman Kodak, Cata- log # E 152 7795. Electrical Characteristics (T = 25° C unless otherwise noted) A (OPB70CWZ and OPB70EWZ) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Input Diode (See OVLAS6CB8 for additional information — for reference only) V Forward Voltage - - 2.6 V I = 40mA F F I Reverse Current - - 100 µA V = 2 V R R Output Phototransistor (See OP505 for additional information — for reference only) V Collector-Emitter Breakdown Voltage 30 - - V I = 100µA, I = 0, E =0 (BR)CEO CE F E V Emitter-Collector Breakdown Voltage 0.4 - - V I = 100µA, I = 0, E =0 (BR)ECO EC F E I Collector Dark Current - - 100 nA V = 10 V, I = 0, E =0 CEO CE F E Coupled OPB70CWZ .10 - 1.0 On-State Collector Cur- (21(3) I mA V = 5 V, I = 40mA , d = 0.15” C(ON) CE F rent OPB70EWZ .25 - 2.5 (1)(3) V Saturation Voltage - - 0.4 V I = 100 µA, I = 40mA , d = 0.15” (SAT) C F (2) I Crosstalk - - 2 µA V = 5 V, I = 40mA CX CE F Notes: (1) The distance from the assembly face to the reflective surface is d. (2) Crosstalk (I ) is the collector current measured with the indicated current in the input diode and with no reflecting surface. CX (3) Measured using Eastman Kodak neutral white test card with 90% diffuse reflectance as a reflecting surface. Reference: Eastman Kodak, Catalog # E 152 7795. Electrical Characteristics (T = 25° C unless otherwise noted) A (OPB70DWZ and OPB70FWZ) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Input Diode (See OVLAS6CB8 for additional information — for reference only) V Forward Voltage - - 2.6 V I = 40mA F F I Reverse Current - - 100 µA V = 2 V R R Output Phototransistor (See OP505 for additional information — for reference only) V Collector-Emitter Breakdown Voltage 30 - - V I = 100µA, I = 0, E =0 (BR)CEO CE F E V Emitter-Collector Breakdown Voltage 5.0 - - V I = 100µA, I = 0, E =0 (BR)ECO EC F E I Collector Dark Current - - 250 nA V = 10 V, I = 0, E =0 CEO CE F E Coupled OPB70DWZ .10 - 1.5 On-State Collector Cur- (1)(3) I mA V = 5 V, I = 40mA , d = 0.15” C(ON) CE F rent OPB70FWZ .25 - 3.5 (1)(3) V Saturation Voltage - - 0.4 V I = 100 µA, I = 40mA , d = 0.15” (SAT) C(ON) F (2) I Crosstalk - - 5.0 µA V = 5 V, I = 40mA CX CE F Notes: (1) The distance from the assembly face to the reflective surface is d. (2) Crosstalk (I ) is the collector current measured with the indicated current in the input diode and with no reflecting surface. CX (3) Measured using Eastman Kodak neutral white test card with 90% diffuse reflectance as a reflecting surface. Reference: Eastman Kodak, Catalog # E 152 7795. OPB703 - Output vs Distance OPB704 - Output vs Distance 1.8 1.8 Normalized at I = 40 mA Normalized at I = 40 mA F F Distance = 0.15" & Kodak 90% Distance = 0.15" & Kodak 90% 1.6 1.6 1.4 1.4 Kodak 90% Kodak 90% Kodak 19% Kodak 19% 1.2 Avery 1.2 Copier Paper Corporate Avery Label Retro Reflective Retro Reflective 1.0 1.0 0.8 0.8 0.6 0.6 0.4 0.4 0.2 0.2 0.0 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Distance (inches) Distance (inches) OPB705 - Output vs Distance Forward Voltage vs Forward Current vs Temp 1.6 1.8 Normalized at I = 40 mA F Distance = 0.15" & Kodak 90% Normalized Forward Current at 20 mA and 20° C 1.6 1.4 1.4 Kodak 90% Kodak 19% 1.2 Copier Paper Avery Labels 1.2 Retro Reflective 1.0 0.8 1.0 0.6 -40° C -20° C 0° C 0.4 0.8 20° C 40° C 0.2 60° C 80° C 0.0 0.6 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 5 10 15 20 25 30 35 40 Distance (inches) Forward Current (mA) Normalized Output Normalized Output Typical Forward Voltage Normalized Output
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