OPB708, OPB709, OPB740, OPB745 Series  Focused for maximum sensitivity  Phototransistor or photodarlington output  Crosstalk does not exceed specified ICEO  24” (610 mm) wire length OPB7_ _WZ  26 AWG wire size Series Each reflective object sensor in the OPB708, OPB709, OPB740 through OPB746 and OPB740WZ through OPB746WZ series consists of an infrared emitting diode and a NPN silicon phototransistor or a photodarlington. The OPB747WZ and OPB748WZ consist of a Red visible LED and a low light level rejection (R ) NPN silicon phototransistor. The Red LED allows BE better contrast ratio when detecting Black marks on a White surface. All these devices are mounted side-by-side on converging optical axes in a black plastic housing focusing on a small area and depth of field. OPB7 _ _ WZ series are wired (UL approved wire) devices that offer various lens options, including no windows, blue polysulfone windows for dust protection or opaque aperture windows with offset openings for improved target resolution. On each sensor included in this data sheet, the photosensor responds to radiation only when a reflective object passes within its field of view. Custom IC(ON) current binning, special wire lengths and connectorization is available through your OPTEK rep. Reflection Part LED Peak Lead Length/ Distance  Non-contact reflective object sensor Number Wavelength Sensor Wire Type Inch (mm)  Assembly line automation OPB708 Transistor  Machine automation 935 nm OPB709 Darlington  Machine safety  End of travel sensor OPB740  Door sensor OPB741 0.150"  Thermal Paper Mark Minimum OPB742 Transistor OPB743 OPB744 OPB745 Darlington Min=0.08” [2.04mm] 890 nm Typ=0.15" [3.81mm] OPB740WZ CONTAINS POLYSULFONE Max=0.30” [7.62mm] OPB741WZ To avoid stress cracking, we suggest using ND Industries’ Vibra-Tite for thread-locking. OPB742WZ Transistor Vibra-Tite evaporates fast without causing structural failure in OPTEK’s molded plastics. OPB743WZ Applies to: OPB460, OPB470, OPB480, OPB490. 24" / 26 OPB744WZ AWG Wire OPB745WZ Darlington OPB746WZ 935 nm R Transistor BE OPB747WZ 645nm OPB748WZ Transistor RoHS OPB708, OPB709, OPB740, OPB741, OPB742, OPB743, OPB744, OPB745 [ MILLIMETERS] DIMENSIONS ARE IN: INCHES OPB740WZ, OPB741WZ, OPB742WZ, OPB743WZ, Package Style OPB744WZ, OPB745WZ, OPB746WZ, OPB747WZ, OPB748WZ Part Number Lens Configuration OPB708 D - No windows OPB709 D - No windows OPB740 A - No windows OPB740WZ A - No windows OPB741 B - Blue windows OPB741WZ B - Blue windows OPB742 C - Offset windows OPB742WZ C - Offset windows OPB743 A - No windows OPB746WZ, OPB709, OPB708 OPB743WZ A - No windows OPB747WZ, OPB745, OPB740 thru OPB744 OPB748WZ OPB745WZ OPB740WZ thru OPB744WZ OPB744 B - Blue windows OPB744WZ B - Blue windows OPB745 C - Offset windows OPB745WZ C - Offset windows OPB746WZ B - Blue windows OPB747WZ C - Offset windows Color-PIN # LED Color-PIN # Transistor OPB748WZ C - Offset windows Orange-1 Anode White-4 Collector Green-2 Cathode Blue-3 Emitter Operating and Storage Temperature Range OPB708, OP709, OPB740, OPB741, OPB742, OPB743, OPB744, OPB745 -40° C to +85° C OPB741WZ, OPB742WZ, OPB743WZ, OPB744WZ, OPB745WZ, OPB746WZ, OPB747WZ, OPB748WZ -40° C to +80° C (1) Lead Soldering Temperature [1/16 inch (1.6mm) from the case for 5 sec. with soldering iron] 260°C Input Diode (See OP165 (935 nm), OP265 (890 nm) or OVLAS6CB8 (645 nm) for additional information) Forward DC Current 40 mA Reverse DC Voltage 2 V (2) Power Dissipation 100 mW Sensor Output (See OP505 (Transistor), OP705 (R Transistor) or OP535 (Darlington) for additional Information) BE Collector-Emitter Voltage OPB708 30 V OPB709 15 V OPB740, OPB741, OPB742, OPB743, OPB744 30 V OPB740WZ, OPB741WZ, OPB742WZ, OPB743WZ, OPB744WZ OPB748WZ 30 V OPB745 15 V OPB745WZ 15 V OPB746WZ, OPB747WZ 24 V Emitter-Collector Voltage OPB708 through OPB745, OPB748 5.0 V OPB746 through OPB747 0.4 V (2) Power Dissipation 100 mW Notes: 1. RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. 2. Derate linearly 1.33 mW° C above 25° C. 645 nm LED (See OVLAS6CB8 for generic information — for reference only) V Forward Voltage - - 2.6 V I = 20 mA F F I Reverse Current - - 100 µA V = 2 V R R 890 nm LED (See OP265 for additional information — for reference only) V Forward Voltage - - 1.8 V I = 40 mA F F I Reverse Current - - 100 µA V = 2 V R R 935 nm LED (See OP165 for additional information — for reference only) V Forward Voltage - - 1.7 V I = 40 mA F F I Reverse Current - - 100 µA V = 2 V R R Output R Phototransistor (See OP705 for general information — for reference only) BE V Collector-Emitter Breakdown Voltage 24 - - V I = 100 µA (BR)CEO C I Collector Dark Current - - 100 nA V = 10 V, I = 0, E =0 CEO CE F E Output Phototransistor (See OP505 for general information — for reference only) V Collector-Emitter Breakdown Voltage 30 - - V I = 100 µA (BR)CEO C V Emitter-Collector Breakdown Voltage 5 - - V I = 100 µA (BR)ECO E I Collector Dark Current - - 100 nA V = 10 V, I = 0, E =0 CEO CE F E Output Photodarlington (See OP535 for general information — for reference only) V Collector-Emitter Breakdown Voltage 15 - - V I = 100 µA (BR)CEO C V Emitter-Collector Breakdown Voltage 5 - - V I = 100 µA (BR)ECO E Collector-Emitter Dark Current I CEO OPB709, OPB745, OPB745WZ - - 25 µA V = 5 V, I = 0, E =0 CE F E Coupled Saturation Voltage V OPB708 - - 0.40 CE(SAT) (1)(2) V I = 40 mA, I = 3 µA , d = 0.15” F c OPB709 - - 1.10 On-State Collector Current OPB708 0.01 - 3.00 OPB709 1.00 - - OPB740, OPB740WZ 0.05 - 2.50 OPB741, OPB741W Z 0.05 - 2.50 OPB742, OPB742WZ 0.01 - 0.70 V = 5 V, I = 40mA , (1)(2) CE F I mA C(ON) OPB743, OPB743WZ 0.20 - 2.00 d = 0.15” (3.810 mm) OPB744, OPB744WZ 0.20 - 2.00 OPB745, OPB745WZ 5.00 - 26.0 OPB746WZ 0.50 - 2.50 OPB747WZ 0.01 - 0.70 OPB748WZ 0.01 - 0.70 Crosstalk OPB708, OPB709, - - - OPB740, OPB740WZ - - 10.0 OPB741, OPB741WZ - - 10.0 OPB742, OPB742WZ - - 1.0 (3) I OPB743, OPB743WZ - - 20.0 CX µA V = 5 V, I = 40mA CC F OPB744, OPB744WZ - - 20.0 OPB745, OPB745WZ - - 25.0 OPB746WZ - - 1.0 OPB747WZ - - 1.0 OPB748WZ - - 1.0 Notes: 1. The distance from the assembly face to the reflective surface is “d”. 2. Reflective surface is Eastman Kodak (Catalog #190 3061) neutral white test card with 90% diffuse reflectance as a reflecting surface. 3. Crosstalk is the photocurrent measured with current to the input diode, no reflective surface and no ambient light (E = 0). E LED Forward Voltage vs Forward Current vs Transistor Output vs Distance OPB708 - Output vs Distance Temperature 1.50 1.40 Normalized at 0.150" Kodak 90% 1.20 1.40 Kodak 90% Kodak 19% e 1.00 Copier Paper g Avery Label a 1.30 t l Retro Material o V 0.80 d r a 1 w .20 r o F 0.60 l a c -40° C i p 1.10 -20° C y T 0.40 0° C 20° C 40° C 1.00 0.20 60° C 80° C 0.00 0.90 0 5 10 15 20 25 30 35 40 0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 Distance (inches) Forward Current (mA) Transistor Output vs Forward Current vs OPB708 - Output vs Forward Current vs Temp Temperature 2.50 Normalized Collector Current at 20mA and 20°C -40° C 2.00 -20° C 0° C 20° C 40° C 60° C 1.50 80° C 1.00 0.50 0.00 0.00 5.00 10.00 15.00 20.00 25.00 30.00 35.00 40.00 Forward Current (mA) Normalized Output (volts) Normalized Output LED Forward Voltage vs Darlington Output vs Distance OPB709 - Output vs Distance Forward Current vs Temperature 1.40 1.50 Normalized at 0.150" Kodak 90% 1.20 1.40 Kodak 90% Kodak 19% 1.00 Copier Paper Avery Label 1.30 Retro Material 0.80 1.20 0.60 -40° C 1.10 -20° C 0.40 0° C 20° C 40° C 0.20 1.00 60° C 80° C 0.00 0.90 0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 0 5 10 15 20 25 30 35 40 Distance (inches) Forward Current (mA) Darlington Output vs Forward Current vs OPB709 - Output vs Forward Current vs Temp Temperature 2.50 Normalized Collector Current at 20mA and 20°C -40° C 2.00 -20° C 0° C 20° C 40° C 60° C 1.50 80° C 1.00 0.50 0.00 0.00 5.00 10.00 15.00 20.00 25.00 30.00 35.00 40.00 Forward Current (mA) Normalized Output (volts) Normalized Output Typical Forward Voltage