Slotted Optical Switch OPB847, OPB848 Features:  Non-contact switching  Apertured for high resolution  Hermetically sealed components Description: The OPB847 and OPB848 consists of a gallium aluminum arsenide LED and a silicon phototransistor, which is soldered into a printed PCBoard and mounted in a high-temperature plastic housing on opposite sides of a 0.100 inch (2.540 mm) wide slot. Both device types have a .025 (0.635mm) inch by .060 inch (1.524 mm) aperture in front of the phototransistor for high resolution positioning sensing. Phototransistor switching takes place when an opaque object passes through the slot. Applications: LED Peak Slot Width / Aperture Lead Length / Part Number Wavelength Sensor Depth Emitter/Sensor Spacing  Non-contact interruptive object sensing OPB847  Assembly line automation 890 nm Transistor 0 . 1 00" / 0.250” 0.025" / 0.025" 0.425" / 0.300" OPB848  Machine automation  Equipment security  Machine safety 1 4 2 3 Pin # Description 1 Anode 2 Cathode 3 Emitter 4 Collector [ MILLIMETERS] DIMENSIONS ARE IN: INCHES RoHS General Note TT Electronics | Optek Technology, Inc. TT Electronics reserves the right to make changes in product specification without 1645 Wallace Drive, Ste. 130, Carrollton, TX USA 75006 |Ph: +1 972 323 2200 notice or liability. All information is subject to TT Electronics’ own data and is www.ttelectronics.com | sensors@ttelectronics.com considered accurate at time of going to print. Issue A 11/2016 Page 1 © TT electronics plc Slotted Optical Switch OPB847, OPB848 Electrical Specifications Absolute Maximum Ratings (T = 25° C unless otherwise noted) A Operating and Storage Temperature Range -40° C to +85° C Lead Soldering Temperature [1/16 inch (1.6mm) from the case for 5 sec. with soldering iron] 240° C Input Diode Forward DC Current 50 mA Reverse Voltage 2.0 V (2) Power Dissipation 100 mW Output Phototransistor Collector-Emitter Voltage 30 V Emitter-Collector Voltage 7 V (2) Power Dissipation 100 mW Electrical Characteristics (T = 25° C unless otherwise noted) A SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Input Diode 1.00 1.35 1.70 I = 20 mA F (4) V Forward Voltage 1.20 1.55 1.90 V I = 20 mA, T = -55° C F F A 1.80 1.20 1.60 I = 20 mA, T = 100° C F A I Reverse Current - 0.10 100 µA V = 2 V R R Output Phototransistor V Collector-Emitter Breakdown Voltage 30 110 - V I = 100 µA, I = 0 (BR)CEO C F V Emitter-Collector Breakdown Voltage 5 10 - V I = 100 µA, I = 0 (BR)ECO E F - 0.20 100 nA V = 10 V, I = 0 CE F I Collector-Emitter Dark Current CEO - 10 100 µA V = 10 V, I = 0, T = 100° C CE F A Notes: (1) Duration can be extended to 10 seconds maximum when flow soldering. (2) Derate linearly 1.00 mW/° C above 25° C. (3) Methanol and isopropanol are recommended as cleaning agents. (4) Measurement is taken during the last 500 µs of a single 1.0 ms test pulse. Heating due to increased pulse rate or pulse width can cause change in measurement results. General Note TT Electronics | Optek Technology, Inc. TT Electronics reserves the right to make changes in product specification without 1645 Wallace Drive, Ste. 130, Carrollton, TX USA 75006 |Ph: +1 972 323 2200 notice or liability. All information is subject to TT Electronics’ own data and is www.ttelectronics.com | sensors@ttelectronics.com considered accurate at time of going to print. Issue A 11/2016 Page 2 © TT electronics plc Slotted Optical Switch OPB847, OPB848 Electrical Characteristics (T = 25° C unless otherwise noted) A SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Combined (1) On-State Collector Current I OPB847 4.0 - - mA V = 10 V, I = 20 mA C(ON) CE F OPB848 1.0 - - V = 10 V, I = 20 mA CE F Collector-Emitter Saturation Voltage V OPB847 0.30 0.40 V I = 2 mA, I = 20 mA CE(SAT) C F OPB848 0.30 0.40 I = 500 µA, I = 20 mA C F Output Rise Time t OPB847 12 20 r OPB848 8 15 µs V = 10 V, I = 20 mA, R = 1000Ω CC F L Output Fall Time t OPB847 12 20 f OPB848 8 15 Notes: (1) Measurement is taken during the last 500 µs of a single 1.0 ms test pulse. Heating due to increased pulse rate or pulse width can cause change in measurement results. OPB847 - Flag Next to Emitter OPB847 - Flag Next to Sensor 1.20 1.20 1.00 1.00 0.80 0.80 0.60 0.60 0.40 0.40 Right to Left Right to Left Left to Right 0.20 Left to Right 0.20 Top to Bottom Top to Bottom 0.00 0.00 0.00 0.05 0.10 0.15 0.20 0.25 0.00 0.05 0.10 0.15 0.20 0.25 Displacement Distance (inches) Displacement Distance (inches) OPB847 - Flag in Middle of Slot 1.20 1.00 0.80 0.60 0.40 Right to Left Left to Right 0.20 Top to Bottom 0.00 0.00 0.05 0.10 0.15 0.20 0.25 Displacement Distance (inches) General Note TT Electronics | Optek Technology, Inc. TT Electronics reserves the right to make changes in product specification without 1645 Wallace Drive, Ste. 130, Carrollton, TX USA 75006 |Ph: +1 972 323 2200 notice or liability. All information is subject to TT Electronics’ own data and is www.ttelectronics.com | sensors@ttelectronics.com considered accurate at time of going to print. Issue A 11/2016 Page 3 © TT electronics plc Typical I Response (mA) C(ON) Typical I Response (mA) C(ON) Typical I Response (mA) C(ON)