 Snap into PCBoard mounting  Transistor output  Mechanical switch replacement  Four 18” (457 mm) 26 AWG, UL wires for electrical connections  Choice of phototransistor or Rbe phototransistor output Each OPB850A switch has a NPN phototransistor coupled with a 940 nm gallium arsenide infrared emitting diode in a molded plastic housing. Each OPB850-1Z has a Rbe phototransistor coupled with an 880 nm gallium arsenide infrared emitting diode in a molded plastic housing. An actuated lever arm flag interrupts the light beam, which switches the transistor output between states that can readily drive logic gates. These devices are designed to replace conventional mechanical limit switches where long life and reliability are critical. The switches are designed to easily snap mount into a 0.036 inch (0.914 mm) 20 gage thick material with a rectangular opening of 0.315” x 0.472 “ (8.0 mm x 12.0 mm). Minor differences exist in the package between the OPB850A and OPB850-1Z (see drawings below). The cable exits the package in different locations. Custom electrical, wire and cabling and connectors are available. Contact your local representative or OPTEK for more information. Ordering Information OPB850A, OPB850-1Z Part  Non-contact interruptive object sensing Pin # / Color Description Number Wavelength Description  Assembly line automation 1-Black Emitter Slotted Optical Flag Switch  Machine automation OPB850A 940 nm 2-Red Anode 18” (457 mm) wires  Equipment security 3-Brown Collector Slotted Optical Flag Switch  Machine safety OPB850-1Z 880 nm 4-Orange Cathode 18” (457 mm) wires 2 3 2 3 4 1 4 1 OPB850A OPB850-1Z RoHS Operating Temperature Range -20° C to +75° C Storage Temperature Range -40° C to +85° C Lead Soldering Temperature [1/16 inch (1.6 mm) from the case for 5 sec. with soldering iron] 260° C Input Diode Reverse Voltage 5 V Continuous Forward Current 50 mA Peak Forward Current (10 µs pulse width, 300 pps) 1 A Power Dissipation 75 mW Output Phototransistor Collector-Emitter Voltage 24 V Emitter-Collector Voltage 5 V Collector DC Current 20 mA Power Dissipation 100 mW Input Diode V Forward Voltage - 1.2 1.6 V I = 20 mA F F I Reverse Current - - - µA V = 2 V R R Output Phototransistor (OPB850A) V Collector-Emitter Breakdown Voltage 30 - - V I = 100 µA, E = 0 (BR)CEO C E V Emitter-Collector Breakdown Voltage 5 - - V I = 100 µA, E = 0 (BR)ECO E E I Collector-Emitter Dark Current - - 100 nA V = 10 V, E = 0 CEO CE E Coupled (OPB850A) (1) V Collector-Emitter Saturation Voltage - - 0.4 V I = 250 µA, I = 20 mA CE(SAT) C F (1) I On-State Collector Current 0.5 2 - mA V = 5 V, I = 20 mA C(ON) CE F (2) I Off-State Collector Current - - 10 µA V = 5 V, I = 20 mA C(OFF) CE F Output Phototransistor (OPB850-1Z) V Collector-Emitter Breakdown Voltage 24 - - V I = 100 µA, E = 0 (BR)CEO C E V Emitter-Collector Breakdown Voltage 0.4 - - V I = 100 µA, E = 0 (BR)ECO E E I Collector-Emitter Dark Current - - 100 nA V = 10 V, E = 0 CEO CE E Coupled (OPB850-1Z) (1) V Collector-Emitter Saturation Voltage - - 0.40 V I = 500 µA, I = 20 mA CE(SAT) C F (1) I On-State Collector Current 0.5 2 - mA V = 10 V, I = 20 mA C(ON) CE F (2) I Off-State Collector Current - - 10 µA V = 10 V, I = 20 mA C(OFF) CE F Notes: (1) ON (I ) electrical condition corresponds to the switch point at about 41° angular displacement of the arm. C(ON) (2) OFF (I ) electrical condition corresponds to the mechanical arm position at rest. C(OFF) (3) From the rest position to the switch point, lever torque measured at the end of the arm is 1.5 grams maximum. (4) Wires are 26 AWG, UL rated.