TT ELECTRONICS OPI150TXV
Specifications
Manufacturer
TT electronics
Manufacturers Part #
OPI150TXV
Industry Aliases
OPI150TXV
Sub-Category
Photointerrupters
Brand
Optek Technology
Packaging
Individual
Factory Pack Quantity
1
Datasheet
Extracted Text
High Reliability Optically Coupled Isolator OPI150TX, OPI150TXV Features: High current transfer ratio 50 kV electrical isolation Base contact lead for conventional transistor biasing TX and TXV devices processed to MIL-PRF-19500 Description: Each OPI150TX and OPI150TXV is an op�cally coupled isolator that consists of a gallium aluminum arsenide infrared light emi�ng diode (OP235TX or OP235TXV) which is op�cally coupled to a NPN silicon phototransistor component (OP804TX or OP804TXV) by means of a light pipe and sealed in a high dielectric plas�c housing. These devices are designed for applica�ons that require high voltage isola�on between input and output. TX and TXV device components are processed to OPTEK’s military screening program pa� erned a� er MIL‐PRF‐19500. Please refer to Applica� on Bulle� ns 208 and 210 for addi� onal design informa� on and reliability (degrada� on) data. Contact your local representa�ve or OPTEK for more informa�on. Applications: Requiring high voltage isolation between input and output Electrical isolation in dirty environments LED Isola�on V Lead CE Part (mA) (Volts) Peak Voltage CTR I Length / Industrial equipment F Number Wavelength Sensor (,000) Min / Max Typ / Max Max Spacing Medical equipment OPI150TX Office equipment 890 nm Transistor 50 10 / NA 16 / 50 30 0.40" / 3.16" OPI150TXV * CATHODE LEAD. OTHER LEADS ARE .060 (1.52) NOM LONGER. DIMETNSION ARE IN INCHES (MILLIMETERS) ** THIS DIMENSION IS CONTROLLED AT THE HOUSING SURFACE Pin# LED Pin# Transistor 1 Anode 4 Collector 2 Cathode 3 Emi�er General Note OPTEK Technology, Inc. TT Electronics reserves the right to make changes in product specification without 1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200 notice or liability. All information is subject to TT Electronics’ own data and is www.optekinc.com | www.ttelectronics.com considered accurate at time of going to print. Issue B 11/2016 Page 1 © TT electronics plc High Reliability Optically Coupled Isolator OPI150TX, OPI150TXV Absolute Maximum Ra�ngs (T = 25° C unless otherwise noted) A Opera�ng Temperature Range ‐65° C to +125° C Storage Temperature Range ‐65° C to +150° C (1) Input‐to‐Output Isola�on Voltage ±50 kVDC Lead Soldering Temperature[1/16 inch (1.6 mm) from the case for 5 seconds with soldering iron] 260° C Input Diode Con�nuous Forward Current 100 mA Reverse Voltage 2 V (2) Power Dissipa�on 200 mW Output Photosensor Con�nuous Collector Current 50 mA Collector‐Base Voltage 50 V Collector‐Emi�er Voltage 50 V Emi�er‐Base Voltage 7 V (3) Power Dissipa�on 250 mW Electrical Characteris�cs (T = 25° C unless otherwise noted) A SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Input Diode (See OP236TX for addi�onal informa�on ‐ for reference only) 1.00 1.40 1.70 I = 30 mA F (5) V Forward Voltage 1.20 1.60 1.90 V I = 30 mA, T = ‐55° C F F A 0.90 1.15 1.50 I = 30 mA, T = 100° C F A I Reverse Current ‐ 0.10 10 µA V = 2 V R R Output Phototransistor (See OP805TX for addi�onal informa�on ‐ for reference only) V Collector‐Base Breakdown Voltage 50 10 ‐ V I = 100 µA , I = 0, I = 0 (BR)CBO C E F V Collector‐Emi�er Breakdown Voltage 50 80 ‐ V I = 1 mA , I = 0, I = 0 (BR)CEO C B F V Emi�er‐Base Breakdown Voltage 7 11 ‐ V I = 100 µA , I = 0, I = 0 (BR)EBO E C F ‐ 0.20 100 na V = 10 V, I = 0, I = 0 CE B F I Collector‐Emi�er Dark Current CEO ‐ 10 100 µA V = 10 V, I = 0, I = 0, T = 100° C CE B F A I Collector‐Base Dark Current ‐ 0.10 10 nA V = 10 V, I = 0, I = 0 CBO CB E F Notes: (1) Measured with input leads shorted together and output leads shorted together in air with a maximum rela�ve humidity of 50%. (2) Derate linearly 2.00 mW/° C above 25° C. (3) Derate linearly 2.50 mW/° C above 25° C. (4) Methanol or isopropanol are recommended as cleaning agents. (5) Measurement is taken during the last 500 µs of a single 1.0 ms test pulse. Hea�ng due to increased pulse rate or pulse width can cause change in measurement results. General Note OPTEK Technology, Inc. TT Electronics reserves the right to make changes in product specification without 1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200 notice or liability. All information is subject to TT Electronics’ own data and is www.optekinc.com | www.ttelectronics.com considered accurate at time of going to print. Issue B 11/2016 Page 2 © TT electronics plc High Reliability Optically Coupled Isolator OPI150TX, OPI150TXV Electrical Characteris�cs (T = 25°C unless otherwise noted) A SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Combined 1.0 ‐ ‐ V = 5 V, I = 0, I = 10 mA CE B F (1) I On‐State Collector Current 0.6 ‐ ‐ mA V = 5 V, I = 0, I = 10 mA, T = ‐55° C C(ON) CE B F A 0.6 ‐ ‐ V = 5 V, I = 0, I = 10 mA, T = 100° C CE B F A V Collector‐Emi�er Satura�on Voltage ‐ 0.20 0.30 V I = 1 mA, I = 0, I = 16 mA CE(SAT) C B F (2) V Isola�on Voltage (Input to Output) 50 ‐ ‐ kV See note 2. ISO t Output Rise Time ‐ 8 15 r µs V = 10 V, I = 2 mA, R = 100Ω CC C L t Output Fall Time ‐ 8 15 f Notes: (1) Measurement is taken during the last 500 µs of a single 1.0 ms test pulse. Hea�ng due to increased pulse rate or pulse width can cause change in measurement results. (2) Measured with input leads shorted together and output leads shorted together in air with a maximum rela�ve humidity of 50%. General Note OPTEK Technology, Inc. TT Electronics reserves the right to make changes in product specification without 1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200 notice or liability. All information is subject to TT Electronics’ own data and is www.optekinc.com | www.ttelectronics.com considered accurate at time of going to print. Issue B 11/2016 Page 3 © TT electronics plc
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