OPV314AT, OPV314YAT, OPV314YBT Features:  850 nm VCSEL technology  High thermal stability  Up to 2.5 Gbps  Recommended for multimode fiber applications  Microbead lens  Pin out and attenuation options available upon request  Burned in for communication level reliability  High optical coupling to MM fiber  ST style receptacle Description: The OPV314AT and OPV314BT are high performance 850nm VCSEL packaged for high speed communication links. OPV314AT and OPV314BT combines all the performance advantages of a VCSEL with the addition of a power monitor diode for precise control of optical power. The OPV314YAT and OPV314YBT are identical electrically and optically and differ only in pin out. Refer to mechanical drawings for details. This product’s combination of features including high speed, high output power and concentric beam makes it an ideal transmitter for integration into all types of data communications equipment. Applications:  Fiber channel  Gigabit Ethernet  ATM  VSR (very short reach)  Intra-system links applications  Optical backplane interconnects General Note TT Electronics | Optek Technology, Inc. TT Electronics reserves the right to make changes in product specification without 1645 Wallace Drive, Ste. 130, Carrollton, TX USA 75006 |Ph: +1 972 323 2200 notice or liability. All information is subject to TT Electronics’ own data and is www.ttelectronics.com | sensors@ttelectronics.com considered accurate at time of going to print. Issue B 11/2016 Page 1 © TT electronics plc OPV314AT, OPV314YAT, OPV314YBT Electrical Specifications Electrical Characteristics (T = 25° C unless otherwise noted) A SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS 600 µW I = 7 mA F Total coupled power OPV314AT, OPV314YAT P T50 50/125 µm fiber OPV314YBT 400 µW I = 7 mA F I Threshold current 0.8 3.0 mA Note 1 TH V Forward voltage 1.6 2.2 V I = 7 mA F F I Reverse current 100 nA V = 5 V R R R Series resistance 20 55 Ohms Note 2 S 60 µW/mA Slope efficiency OPV314AT, OPV314YAT ɳ Note 3 OPV314YBT 40 µW/mA I Reverse current, photodiode 30 nA V = 40 V RPD R I Monitor current 30 µA I = 7 mA, V = 5 V M F R λ Wavelength 840 860 Nm ∆λ Optical bandwidth 0.85 Nm t Rise time 90 Ps 20 to 80% r t Fall time 120 Ps 80 to 20% f N Relatively intensity noise -123 Db/Hz RI ∆ɳ/∆T Temp coefficient of slope efficiency -0.4 %/°C 0° - 70°C ∆I Temp variance of threshold current ±1.0 mA 0° - 70°C TH ∆λ/∆T Temp coefficient of wavelength 0.06 Nm/°C 0° - 70°C ∆V /∆T Temperature coefficient for V -2.5 Mv/°C f F General Note TT Electronics | Optek Technology, Inc. TT Electronics reserves the right to make changes in product specification without 1645 Wallace Drive, Ste. 130, Carrollton, TX USA 75006 |Ph: +1 972 323 2200 notice or liability. All information is subject to TT Electronics’ own data and is www.ttelectronics.com | sensors@ttelectronics.com considered accurate at time of going to print. Issue B 11/2016 Page 2 © TT electronics plc OPV314AT, OPV314YAT, OPV314YBT General Note TT Electronics | Optek Technology, Inc. TT Electronics reserves the right to make changes in product specification without 1645 Wallace Drive, Ste. 130, Carrollton, TX USA 75006 |Ph: +1 972 323 2200 notice or liability. All information is subject to TT Electronics’ own data and is www.ttelectronics.com | sensors@ttelectronics.com considered accurate at time of going to print. Issue B 11/2016 Page 3 © TT electronics plc