SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N2222AUB • High Speed Saturated Switching • Hermetic Surface Mounted Package. • Ideally suited for High Speed Switching and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise stated) A V Collector – Base Voltage 75V CBO V Collector – Emitter Voltage 50V CEO V Emitter – Base Voltage 6V EBO I Continuous Collector Current 800mA C P T = 25°C Total Power Dissipation at 500mW D A Derate Above 37.5°C 3.08mW/°C T Junction Temperature Range -65 to +200°C J T Storage Temperature Range -65 to +200°C stg THERMAL PROPERTIES (Each Device) Symbols Parameters Min. Typ. Max. Units R Thermal Resistance, Junction To Ambient 325 °C/W θJA Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. S S S Se e e em m m me e e elllla a a ab b b b L L L Liiiim m m miiiit t t te e e ed d d d Coventry Road, Lutterworth, Leicestershire, LE17 4JB Document Number 9960 Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Issue 1 Page 1 of 3 SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N2222AUB ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated) A Symbols Parameters Test Conditions Min. Typ Max. Units (1) Collector-Emitter V I = 10mA I = 0 50 V (BR)CEO C B Breakdown Voltage V = 75V I = 0 10 μA CB E I V = 60V I = 0 Collector Cut-Off Current 10 nA CBO CB E T = 150°C 10 μA A V = 6V I = 0 10 μA EB C I Emitter Cut-Off Current EBO V = 4V I = 0 10 nA EB C I V = 50V Collector Cut-Off Current 50 nA CES CE I = 150mA I = 15mA 0.3 C B (1) Collector-Emitter Saturation V CE(sat) Voltage I = 500mA I = 50mA 1.0 C B V I = 150mA I = 15mA 0.6 1.2 C B (1) Base-Emitter Saturation V BE(sat) Voltage I = 500mA I = 50mA 2 C B I = 0.1mA V = 10V 50 C CE I = 1.0mA V = 10V 75 325 C CE I = 10mA V = 10V 100 C CE (1) Forward-current transfer h FE ratio T = -55°C 35 A I = 150mA V = 10V 100 300 C CE I = 500mA V = 10V 30 C CE DYNAMIC CHARACTERISTICS I = 20mA V = 20V C CE Small signal forward-current | h | 2.5 fe transfer ratio f = 100MHz I = 1.0mA V = 10V C CE h Small Signal Current Gain 50 fe f = 1.0KHz V = 10V I = 0 CB E C Output Capacitance 8 obo f = 1.0MHz pF V = 0.5V I = 0 EB C C Input Capacitance 30 ibo f = 1.0MHz I = 150mA V = 30V C CC t Turn-On Time 35 on I = 15mA B1 ns I = 150mA V = 30V C CC t Turn-Off Time 300 off I = - I = 15mA B1 B2 N N N No o o ot t t te e e es s s s (1) Pulse Width ≤ 300us, δ ≤ 2% S S S Se e e em m m me e e elllla a a ab b b b L L L Liiiim m m miiiit t t te e e ed d d d Coventry Road, Lutterworth, Leicestershire, LE17 4JB Document Number 9960 Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Issue 1 Page 2 of 3 SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N2222AUB MECHANICAL DATA Dimensions in mm (inches) 1.02 ± 0.10 R0.31 (0.04 ± 0.004) 0.51 ± 0.10 (0.012) (0.02 ± 0.004) 4 3 2 1 1.91 ± 0.10 (0.075 ± 0.004) 1.40 0.31 rad. (0.055) (0.012) 3.05 ± 0.13 max. (0.12 ± 0.005) LCC1-4 Underside View Pad 1 - Base Pad 2 - Emitter Pad 3 - Collector Pad 4 - Lid Contact * * The additional contact provides a connection to the lid in the application. Connecting the metal lid to a known electrical potential stops deep dielectric discharge in space applications; see the Space Weather link www.semelab.co.uk/mil/lcc1_4 on the Semelab web site. Package variant to be specified at order. S S S Se e e em m m me e e elllla a a ab b b b L L L Liiiim m m miiiit t t te e e ed d d d Coventry Road, Lutterworth, Leicestershire, LE17 4JB Document Number 9960 Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Issue 1 Page 3 of 3 R0.56 (0.022) 2.54 ± 0.13 (0.10 ± 0.005) 0.76 ± 0.15 (0.03 ± 0.006)