Point Source Hermetic Infrared Emitting Diode OP230WPS Features: • Point source • Symmetrical beam pa� ern • Flat lens for wide beam angle • Ideal for use with collima� ng lenses • Wide opera� ng temperature range • TO-46 metal can package Description: The OP230WPS is an 850 nm GaAIAs point source infrared emi�ng diode that is mounted in a herme� c ţat lens TO-46 metal can package. The main advantage of this emi� er is that it emits photons from a 0.004” area that is aligned with the package’s op� cal centerline. Unlike other GaAIAs emi� ers, this device performs more like an ideal point source and is suitable for use with lenses to create collimated light sources that can be used in a variety of sensing applica� ons. Another advantage is that the GaAIAs feature provides a higher radiated output than gallium arsenide at the same forward current. Please refer to ApplicaƟon BulleƟns 208 and 210 for addiƟonal design informaƟon and reliability (degradaƟon) data. Ordering InformaƟon Applications: Output Power • Op� cal encoders 2 Part LED Peak (mW/cm ) Total Beam Lead • Light curtains Number Wavelength Min / Max Angle Length • Op� cal triangula� on systems OP230WPS 850 nm 0.5 / NA ±45° 0.50” • Bar code readers 1 2 [MILLIMETERS] DIMENSIONS ARE IN: INCHES X THIS DIMENSION CONTROLLED AT HOUSING SURFACE. Pin # LED 1 Cathode 2 Anode RoHS General Note OPTEK Technology, Inc. TT Electronics reserves the right to make changes in product specification without 1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200 notice or liability. All information is subject to TT Electronics’ own data and is www.optekinc.com | www.ttelectronics.com considered accurate at time of going to print. Issue B 07/2016 Page 1 © TT electronics plc Point Source Hermetic Infrared Emitting Diode OP230WPS Electrical Specifications Absolute Maximum Ratings (T = 25° C unless otherwise noted) A o o Storage Temperature Range -55 C to +150 C o o -40 C to +125 C Opera� ng Temperature Range Reverse DC Voltage 2.0 V 100 mA Forward Current Peak Forward Current (2 µs pulse width, 0.1% duty cycle) 3.0 A (1) 260° C Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron] (2) Power Dissipa� on 100 mW Electrical Characteristics (T = 25° C unless otherwise noted) A SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Input Diode 2 (3 ) Apertured Irradiance 0.50 - - mW/cm E I = 100 mA E(APT) F V Forward Voltage - - 2.2 V I = 100 mA F F I Reverse Current - - 10 µA V = 2.5 V R R λ Peak Wavelength - 850 - nm I = 20 mA P F Spectral Bandwidth @ 50% I = 20 mA - 15 - I =20 mA β nm F F θ Emission Angle at Half Power Points - ±45 - Degree I = 20 mA HP F t Output Rise Time - 20 - ns I =100 mA, PW=10 µs, and D.C.=10% r F(PK) t Output Fall Time - 20 - ns I =100 mA, PW=10 µs, and D.C.=10% f F(PK) Notes: 1. All parameters tested using pulse technique. 2. RMA ţux is recommended. Dura� on can be extended to 10 seconds maximum when ţow soldering. 3. Derate linearly 1 mW/° C above 25° C. 4. E is a measurement of the average apertured radiant energy incident upon a sensing area 0.250” (6.35 mm) in diameter and perpendicular E(APT) to and centered to the mechanical axis of the emi�ng surface at a distance of 0.466” (11.84 mm). E is not necessarily uniform within the E(APT) measured area. General Note OPTEK Technology, Inc. TT Electronics reserves the right to make changes in product specification without 1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200 notice or liability. All information is subject to TT Electronics’ own data and is www.optekinc.com | www.ttelectronics.com considered accurate at time of going to print. Issue B 07/2016 Page 2 © TT electronics plc Point Source Hermetic Infrared Emitting Diode OP230WPS Performance OP230WPS Forward Voltage vs Forward Current vs Optical Power vs Forward Current vs Temperature Temperature 2.4 6.0 Normalized at I = 20mA at T = 20°C, V = 5 V F A CE 2.2 -40° C 5.0 -20° C 2.0 0° C 20° C 40° C 1.8 4.0 60° C 80° C 100° C 1.6 120° C 3.0 1.4 -40° C 1.2 -20° C 2.0 0° C 20° C 1.0 40° C 60° C 1.0 80° C 0.8 100° C 120°C 0.6 0.0 0 1020 3040 50 6070 8090 100 0 10 2030 405060 7080 90 100 Forward Current (mA) Forward Current I (mA) F Distance vs Power vs Forward Current 50 Normalized at 1.0" and 20 mA 45 Forward Current 40 10 mA 20 mA 35 30 mA 40 mA 50 mA 30 60 mA 80 mA 100 mA 25 20 15 10 5 0 0.2 0.7 1.2 1.7 Distance (inches) General Note OPTEK Technology, Inc. TT Electronics reserves the right to make changes in product specification without 1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200 notice or liability. All information is subject to TT Electronics’ own data and is www.optekinc.com | www.ttelectronics.com considered accurate at time of going to print. Issue B 07/2016 Page 3 © TT electronics plc Normalized Output Power Typical Forward Voltage (V) Normalized Optical Power