Hermetic Infrared Emitting Diode OP230 Series Features:  Focused and non‐focused op� cal light pa� ern  Enhanced temperature range  TO‐46 herme� cally sealed package  Mechanically and spectrally matched to other Optek devices  Choice of power ranges  Choice of narrow or wide irradiance pa� ern Descrip�on:  Each device in this series is a gallium aluminum arsenide (GaAIAs) infrared emi�ng diode, mounted in a herme� c metal TO‐ 46 housing. The gallium aluminum arsenide feature provides a higher radiated output than gallium arsenide at the same forward current. Each OP231, OP232, OP233, OP234 and OP235 device is lensed to provide a narrow beam angle (18°) between half power points. The 890 nm wavelength closely matches the spectral response of silicon phototransistors, while the narrow beam angle – combined with the speciŢed radiant intensity of the OP231 series – facilitates easy design in beam interrupt applica� ons in conjunc� on with the OP800 or OP598 series photosensors. The OP231 series is mechanically and spectrally  matched to OP800, OP593 and OP598 phototransistors. Each OP231W, OP232W, OP233W, OP234W and OP235W device is lensed to provide a wide beam angle (50°) between half power points. The 890 nm wavelength closely matches the spectral response of silicon photo‐transistors, while the wide beam angle provides rela� vely even illumina� on over a large area. The OP231W is mechanically and spectrally matched to  the OP800WSL and OP830SL series devices.  Please refer to Applica�on Bulle�ns 208 and 210 for addi�onal design informa�on and reliability (degrada�on) data.  Custom electrical, wire and cabling and connectors are Ordering Informa�on  available. Contact your local representa� ve or OPTEK for     Output Power       more informa� on.  2 Part  LED Peak  (mW/cm )   Total Beam  Lead  Number  Wavelength   Min / Max  Angle  Length   OP231  1.5 / NA OP232  890 nm 2.0 / 6.0 Applica�ons:  OP233  3.0 / NA 18°  Non‐contact reţec� ve object sensor OP234  5.0 / NA  Assembly line automa� on 850 nm OP235  6.0 / NA  Machine automa� on 0.50" OP231W  1.5 / NA  Machine safety 890 nm OP232W  3.5 / 7.0  End of travel sensor OP233W  5.0 / NA 50°  Door sensor OP234W  5.0 / NA 850 nm OP235W  6.0 / NA General Note OPTEK Technology, Inc. TT Electronics reserves the right to make changes in product specification without notice or 1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200 liability. All information is subject to TT Electronics’ own data and is considered accurate at www.optekinc.com | www.ttelectronics.com time of going to print. © TT electronics plc Issue B 07/2016 Page 1 Hermetic Infrared Emitting Diode OP230 Series OP231, OP232, OP233, OP234, OP235  Anode Cathode [MILLIMETERS] DIMENSIONS ARE IN:  INCHES OP231W, OP232W, OP233W, OP234W, OP235W  Anode Cathode Pin #  LED  1 Anode  [MILLIMETERS] DIMENSIONS ARE IN:  2 Cathode INCHES Absolute Maximum Ratings (T =25°C unless otherwise noted) A o o Storage Temperature Range ‐65 C to +150 C o o Operating Temperature Range ‐65 C to +125 C Reverse Voltage 2.0 A Continuous Forward Current 100 mA Peak Forward Current 10.0 A (1)(2) Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron] 260° C (3) Power Dissipation 200 mW General Note OPTEK Technology, Inc. TT Electronics reserves the right to make changes in product specification without notice or 1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200 liability. All information is subject to TT Electronics’ own data and is considered accurate at www.optekinc.com | www.ttelectronics.com time of going to print. © TT electronics plc Issue B 07/2016 Page 2 Hermetic Infrared Emitting Diode OP230 Series Electrical Characteris�cs (T = 25°C unless otherwise noted) A SYMBOL  PARAMETER  MIN  TYP  MAX  UNITS  TEST CONDITIONS  Input Diode Apertured Radiant Incidence OP231 Series OP231 1.5 ‐ ‐ (3 )(4) OP232 2.0 ‐ 6.0 mW/ I = 100 mA F 2 OP233 3.0 ‐ ‐ cm Aperture = 0.250” OP234 5.0 ‐ ‐ Distance = 1.429” OP235 6.0 ‐ ‐ E E(APTa) OP231W 1.5 ‐ ‐ OP231W Series OP232W 3.5 ‐ 7.0 (3 )(4) mW/ I = 100 mA F OP233W 5.0 ‐ ‐ 2 cm Aperture = 0.250” OP234W 5.0 ‐ ‐ Distance = 0.466” OP235W 6.0 ‐ ‐ Radiant Power Output OP231 ‐ 6.0 ‐ (3 )(4) P I = 100 mA O F OP232 ‐ 8.0 ‐ mW OP233 ‐ 10.0 ‐ (3) Forward Voltage ‐ ‐ 2.0 V V I = 100 mA F F I Reverse Current ‐ ‐ 100 µA V = 2.0 V R R Wavelength at Peak Emission OP231, OP232, OP233 ‐ 890 ‐ λ P nm I = 10 mA F OP234, OP235 ‐ 850 ‐ Spectral Bandwidth between Half Power ‐ 80 ‐ β nm I = 10 mA F Points ∆λ /∆T Spectral Shi� with Temperature ‐ +0.30 ‐ nm/°C I = Constant P F Emission Angle at Half Power Points OP231 ‐ OP235 ‐ 18 ‐ θ HP Degree I = 100 mA F OP231W ‐ OP231W ‐ 50 ‐ t Output Rise Time ‐ 500 ‐ ns r I =100 mA, PW=10 µs, and F(PK) D.C.=10.0% t Output Fall Time ‐ 250 ‐ ns f Notes: 1. RMA ţux is recommended. Dura� on can be extended to 10 seconds maximum when ţow soldering. 2. Derate linearly 2.0 mW/° C above 25° C. 3. Measurement made with 100 µs pulse measured at the trailing edge of the pulse with a duty cycle of 0.1% and an I = 100 mA. F 4. For the OP231 series, E is a measurement of the average radiant intensity within the cone formed by the measurement surface, a radius of E(APT) 1.429” (36.30 mm) measured from the lens side of the tab to the sensing surface and a sensing surface of 0.250” (6.35 mm) in diameter forming a 10° cone. For the OP231W series, E is a measurement of the average radiant intensity within the cone formed by the measurement surface, a radius E(APT) of 0.466” (11.84 mm) measured from the lens side of the tab to the sensing surface and a sensing surface of 0.250” (6.35 mm) in diameter forming a 10° cone. E is not necessarily uniform within the measured area. E(APT) General Note OPTEK Technology, Inc. TT Electronics reserves the right to make changes in product specification without notice or 1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200 liability. All information is subject to TT Electronics’ own data and is considered accurate at www.optekinc.com | www.ttelectronics.com time of going to print. © TT electronics plc Issue B 07/2016 Page 3 Hermetic Infrared Emitting Diode OP230 Series OP231, OP232, OP233 (including “W” devices)  Forward Voltage vs Forward Current vs Temperature Optical Power vs I vs Temperature F 1.8 3.5 Normalized at 50 mA and 20° C 1.7 3.0 -60° C -40° C -20° C 1.6 0° C 2.5 20° C 40° C 1.5 60° C 80° C 100° C 2.0 1.4 120° C 1.3 1.5 -60° C -40° C 1.2 -20° C 1.0 0° C 20° C 1.1 40° C 60° C 0.5 80° C 1.0 100° C 120°C 0.0 0.9 0 10203040 5060708090 100 0 1020 30 40506070 8090 100 Forward Current (mA) Forward Current I (mA) F Relative Radiant Intensity vs. Angular Distance vs Output Power vs Forward Current Displacement 6 1.0 Normalized at 1" and 50 mA 0.9 5 0.8 Forward Current 10 mA 0.7 20 mA 4 30 mA 40 mA 0.6 50 mA 60 mA 70 mA 0.5 3 80 mA 90 mA 100 mA 0.4 2 0.3 0.2 1 0.1 0.0 0 -20 -15 -10 -5 0 5 10 15 20 0.2 '' 0.4 '' 0.6 '' 0.8 '' 1.0 '' 1.2 '' 1.4 '' 1.6 '' 1.8 '' 2.0 '' Angular Displacement (Degrees) Distance (inches) General Note OPTEK Technology, Inc. TT Electronics reserves the right to make changes in product specification without notice or 1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200 liability. All information is subject to TT Electronics’ own data and is considered accurate at www.optekinc.com | www.ttelectronics.com time of going to print. © TT electronics plc Issue B 07/2016 Page 4 Typical Forward Voltage (V) Normalized Output Power Normalized Optical Power Relative Radiant Intensity Hermetic Infrared Emitting Diode OP230 Series OP234, OP234W  Forward Voltage vs Forward Current vs Optical Power vs Forward Current vs Temperature Temperature 1.8 2.5 Normalized at 50 mA and 20°C -60° C 1.6 -40° C 2.0 -20° C 0° C 20° C 1.4 40° C 60° C 1.5 80° C 100° C 1.2 120° C 1.0 -60° C -40° C 1.0 -20° C 0° C 20° C 40° C 0.5 60° C 0.8 80° C 100° C 120° C 0.0 0.6 0 5 10 15 20 25 30 35 40 45 50 0 1020 3040506070 8090 100 Forward Current (mA) Forward Current I (mA) F Relative Radiant Intensity vs Angular Distance vs Output Power vs Forward Current Displacement 1.2 10.00 Normalized at 1.0" and 50 mA 1.0 0.8 1.00 0.6 Forward Current 10 mA 0.4 0.10 20 mA 30 mA 40 mA 50 mA 60 mA 0.2 80 mA 100 mA 120 mA 0.0 0.01 -80 -30 20 70 0.2 '' 0.7 '' 1.2 '' 1.7 '' Angular Displacement (Degrees) Distance (inches) General Note OPTEK Technology, Inc. TT Electronics reserves the right to make changes in product specification without notice or 1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200 liability. All information is subject to TT Electronics’ own data and is considered accurate at www.optekinc.com | www.ttelectronics.com time of going to print. © TT electronics plc Issue B 07/2016 Page 5 Normalized Output Power Typical Forward Voltage (V) Relative Radiant Intensity Relative Output Power Hermetic Infrared Emitting Diode OP230 Series OP235, OP235W  Forward Voltage vs Forward Current vs Optical Power vs Forward Current vs Temperature Temperature 1.8 2.5 Normalized at 50 mA and 20° C 1.6 -60°C 2.0 -40°C -20°C 0°C 20°C 1.4 40°C 60°C 80°C 1.5 100°C 120°C 1.2 1.0 -60°C -40°C 1.0 -20°C 0°C 20°C 40°C 0.5 0.8 60°C 80°C 100°C 120°C 0.6 0.0 0 5 10 15 20 25 30 35 40 45 50 0 10 20 3040 5060708090 100 Forward Current (mA) Forward Current I (mA) F Distance vs Output Power vs Forward Current 20 Normalized at 1.0" and 50 mA 18 Forward Current 16 10 mA 20 mA 14 30 mA 40 mA 50 mA 12 60 mA 80 mA 10 100 mA 120 mA 8 6 4 2 0 0.2 '' 0.4 '' 0.6 '' 0.8 '' 1.0 '' 1.2 '' 1.4 '' 1.6 '' 1.8 '' 2.0 '' Distance (inches) General Note OPTEK Technology, Inc. TT Electronics reserves the right to make changes in product specification without notice or 1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200 liability. All information is subject to TT Electronics’ own data and is considered accurate at www.optekinc.com | www.ttelectronics.com time of going to print. © TT electronics plc Issue B 07/2016 Page 6 Typical Forward Voltage (V) Normalized Output Power Relative Output Power