TT ELECTRONICS OP245PS
Specifications
Manufacturer
TT electronics
Manufacturers Part #
OP245PS
Industry Aliases
OP245PS
Sub-Category
Infrared Emitters
Brand
Optek Technology
Packaging
Bulk
Factory Pack Quantity
500
Datasheet
Extracted Text
Plastic Point Source Infrared Emitting Diode OP245PS Features: • Point source irradiance pa� ern • Side-looking package for space-limited applica� ons • Wavelength matched to silicon’s peak response • Higher power output than GaAs at equivalent drive currents • Fast switching speed Description: Each OP245PS device is an infrared emi�ng diode with a 850 nm GaAIAs chip, molded in a clear IR-transmissive side- looking epoxy package. This package makes these devices ideal for PCBoard mounted slo� ed switches and for mounted interrupt detectors. The stable forward V vs T characteris� c make them suitable for applica� ons that have limited voltage, such as ba� ery F A opera� on; whereas, the low T /T makes them ideal for high-speed opera� ons. R F Please refer to ApplicaƟon BulleƟns 208 and 210 for addiƟonal design informaƟon and reliability (degradaƟon) data. Ordering InformaƟon Applications: Part LED Peak Lens Total Beam Lead • Space-limited applica� ons Number Wavelength Type Angle Length (min.) • PCBoard mounted slo� ed switch OP245PS 850 nm Flat ±18° 0.5” / 12.7 mm • Mounted interrupt detector • High-speed applica� ons 1 2 Pin # LED 1 Anode 2 Cathode 1 ANODE 2 CATHODE NOTES; [MILLIMETERS] DIMENSIONS ARE IN: INCHES 1. OUTSIDE DISCRETE SHELL IS POLYSULFONE P1700-11 CLEAR. 2. THIS LED IS BUILT WITH A 0.011” X 0.011” GaAIAs CHIP. 3. MAX ALLOWABLE EPOXY MENSCUS IS 0.010”. CONTAINS POLYSULFONE To avoid stress cracking, we suggest using ND Industries’ Vibra-Tite for thread-locking. Vibra-Tite evaporates fast without causing structural failure in OPTEK'S molded plas� cs. RoHS General Note OPTEK Technology, Inc. TT Electronics reserves the right to make changes in product specification without 1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200 notice or liability. All information is subject to TT Electronics’ own data and is www.optekinc.com | www.ttelectronics.com considered accurate at time of going to print. Issue B 07/2016 Page 1 © TT electronics plc Plastic Point Source Infrared Emitting Diode OP245PS Electrical Specifications Absolute Maximum Ratings (T = 25° C unless otherwise noted) A o o Storage and Opera� ng Temperature Range -40 C to +100 C Reverse Voltage 2.0 V Con� nuous Forward Current 50 mA Peak Forward Current 1.0 A (1) Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron] 260° C (2) Power Dissipa� on 100 mW Electrical Characteristics (T = 25° C unless otherwise noted) A SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Input Diode mW/ (,3) E Apertured Radiant Incidence 0.12 - 0.8 I = 20 mA E (APT) 2 F cm V Forward Voltage 1.2 - 1.7 V I = 20 mA F F I Reverse Current - 10 - µA V = 2 V R R λ Wavelength at Peak Emission - 850 - nm I = 20 mA P F Spectral Bandwidth between Half Power B - 50 - nm I = 20 mA F Points θ Emission Angle at Half Power Points - ±18° - Degree I = 20 mA HP F I = 20 mA, PW = 10 µs, D.C. = F(PK) t Output Rise Time - 10 - ns r 10% I = 20 mA, PW = 10 µs, D.C. = F(PK) t Output Fall Time - 10 - ns f 10% Notes: 1. RMA ţux is recommended. Dura� on can be extended to 10 seconds maximum when ţow soldering. A maximum of 20 grams force may be applied to the leads when soldering. 2. Derate linearly 1.33 mW/° C above 25° C. 3. E is a measurement of the average apertured radiant energy incident upon a sensing area 0.180” (4.57 mm) in diameter perpendicular to E(APT) and centered on the mechanical axis of the lens and 0.653” (16.6 mm) from the lens � p. E is not necessarily uniform within the measured E(APT) area. General Note OPTEK Technology, Inc. TT Electronics reserves the right to make changes in product specification without 1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200 notice or liability. All information is subject to TT Electronics’ own data and is www.optekinc.com | www.ttelectronics.com considered accurate at time of going to print. Issue B 07/2016 Page 2 © TT electronics plc Plastic Point Source Infrared Emitting Diode OP245PS Performance OP245PS Forward Voltage vs Forward Current vs Optical Power vs Forward Current vs Temperature Temperature 2.4 6.0 Normalized at I = 20mA at T = 20°C, V = 5 V F A CE 2.2 -40° C 5.0 -20° C 2.0 0° C 20° C 40° C 1.8 4.0 60° C 80° C 100° C 1.6 120° C 3.0 1.4 -40° C 1.2 -20° C 2.0 0° C 20° C 1.0 40° C 60° C 1.0 80° C 100° C 0.8 120°C 0.6 0.0 0 1020 3040 50 6070 8090 100 0 10 2030 405060 7080 90 100 Forward Current I (mA) Forward Current (mA) F Distance vs Power vs Forward Current 50 Normalized at 1.0" and 20 mA 45 Forward Current 40 10 mA 20 mA 35 30 mA 40 mA 50 mA 30 60 mA 80 mA 100 mA 25 20 15 10 5 0 0.2 0.7 1.2 1.7 Distance (inches) General Note OPTEK Technology, Inc. TT Electronics reserves the right to make changes in product specification without 1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200 notice or liability. All information is subject to TT Electronics’ own data and is www.optekinc.com | www.ttelectronics.com considered accurate at time of going to print. Issue B 07/2016 Page 3 © TT electronics plc Typical Forward Voltage (V) Normalized Output Power Normalized Optical Power
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