PN Silicon Photodiode OP900SL Features: • Narrow receiving angle • Enhanced temperature range • Ideal for direct moun� ng to PCBoard • Fast switching speed • Linear response vs.irradiance • Mechanically and spectrally matched to OP123 emi� ers Description: Each OP900SL consists of a PN junction silicon photodiode mounted in a miniature glass-lensed hermetically sealed “pill” package. The lensing effect allows an acceptance half-angle of 18°, when measured from the optical axis to the half-power point. The OP900SL is mechanically and spectrally matched to the OP123 series emitters. Please refer to Application Bulletins 208 and 210 for additional design information and reliability (degradation) data, and to Application Bulletin 202 for pill-type soldering to PCBoard. Ordering InformaƟon Applications: Part Number Sensor Viewing Angle • Non-contact reţec� ve object sensor OP900SL Photodiode 35° • Assembly line automa� on • Machine automa� on • Machine safety • End of travel sensor • Door sensor 1 2 [MILLIMETERS] DIMENSIONS ARE IN: INCHES Pin # Sensor 1 Collector / Cathode 2 Emitter / Anode RoHS General Note OPTEK Technology, Inc. TT Electronics reserves the right to make changes in product specification without 1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200 notice or liability. All information is subject to TT Electronics’ own data and is www.optekinc.com | www.ttelectronics.com considered accurate at time of going to print. Issue A 08/2016 Page 1 © TT electronics plc PN Silicon Photodiode OP900SL Electrical Specifications Absolute Maximum Ratings (T = 25° C unless otherwise noted) A Reverse Voltage 100 V Opera� ng Temperature Range -65° C to +150° C Storage Temperature Range -65° C to +125° C (1) Lead Soldering Temperature [1/16 inch (1.6 mm) from the case for 5 seconds with soldering 260° C iron] (2) Power Dissipa� on 50 mW Electrical Characteristics (T = 25° C unless otherwise noted) A SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS 2 (3)(4) I Light Current 8 14 - µA V = 10 V, E = 20 mW/cm L R E (3) I Dark Current - - 10 nA V = 10 V, E = 0 D R E V Reverse Voltage Breakdown 100 150 - V I = 100 μA (BR)R R t Rise Time - 100 - r V = 50 V, I = 8 µA, R = 1 kΩ R L L ns (see test circuit) t Fall Time - 100 - f Notes: (1) RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. (2) Derate linearly 0.5 mW/° C above 25° C. (3) Junction temperature maintained at 25° C. (4) Light source is an unfiltered tungsten bulb operating at CT = 2870 K or equivalent infrared source.. General Note OPTEK Technology, Inc. TT Electronics reserves the right to make changes in product specification without 1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200 notice or liability. All information is subject to TT Electronics’ own data and is www.optekinc.com | www.ttelectronics.com considered accurate at time of going to print. Issue A 08/2016 Page 2 © TT electronics plc PN Silicon Photodiode OP900SL Performance OP900SL General Note OPTEK Technology, Inc. TT Electronics reserves the right to make changes in product specification without 1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200 notice or liability. All information is subject to TT Electronics’ own data and is www.optekinc.com | www.ttelectronics.com considered accurate at time of going to print. Issue A 08/2016 Page 3 © TT electronics plc